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Author Ortiz-Aguayo, D.; Ceto, X.; De Wael, K.; del Valle, M. url  doi
openurl 
  Title Resolution of opiate illicit drugs signals in the presence of some cutting agents with use of a voltammetric sensor array and machine learning strategies Type A1 Journal article
  Year 2022 Publication (down) Sensors and actuators : B : chemical Abbreviated Journal  
  Volume 357 Issue Pages 131345  
  Keywords A1 Journal article; Antwerp Electrochemical and Analytical Sciences Lab (A-Sense Lab)  
  Abstract In the present work, the resolution and quantification of mixtures of different opiate compounds in the presence of common cutting agents using an electronic tongue (ET) is evaluated. More specifically, ternary mixtures of heroin, morphine and codeine were resolved in the presence of caffeine and paracetamol. To this aim, an array of three carbon screen-printed electrodes were modified with different ink-like solutions of graphite, cobalt (II) phthalocyanine and palladium, and their responses towards the different drugs were characterized by means of square wave voltammetry (SWV). Developed sensors showed a good performance with good linearity at the mu M level, LODs between 1.8 and 5.3 mu M for the 3 actual drugs, and relative standard deviation (RSD) ca. 2% for over 50 consecutive measurements. Next, a quantitative model that allowed the identification and quantification of the individual substances from the overlapped voltammograms was built using partial least squares regression (PLS) as the modeling tool. With this approach, quantification of the different drugs was achieved at the mu M level, with a total normalized root mean square error (NRMSE) of 0.084 for the test subset.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000745113900003 Publication Date 2021-12-31  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-4005 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access OpenAccess  
  Notes Approved no  
  Call Number UA @ admin @ c:irua:185446 Serial 8922  
Permanent link to this record
 

 
Author Marikutsa, A.; Krivetskiy, V.; Yashina, L.; Rumyantseva, M.; Konstantinova, E.; Ponzoni, A.; Comini, E.; Abakumov, A.; Gaskov, A. doi  openurl
  Title Catalytic impact of RuOx clusters to high ammonia sensitivity of tin dioxide Type A1 Journal article
  Year 2012 Publication (down) Sensors and actuators : B : chemical T2 – 25th Eurosensors Conference, SEP 04-07, 2011, Athens, GREECE Abbreviated Journal Sensor Actuat B-Chem  
  Volume 175 Issue Pages 186-193  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A comparative study of NH3-sensing performance of blank and modified nanocrystal line SnO2 was performed. Tin dioxide modified by ruthenium displayed the highest ammonia sensitivity with a maximum signal at 200 degrees C. The modifier was shown by XPS and EPR to occur in a mixed valence state of oxidized ruthenium distributed between the surface and bulk of tin dioxide nanocrystals. RuOx clustering on SnO2 surface was detected by means of electron microscopy assisted EDX-mapping. The effect of RuOx on tin dioxide interaction with ammonia was studied by temperature-programmed NH3 desorption, simultaneous Kelvin probe and DC-resistance measurements, EPR spectroscopy and analyses of the gas-solid interaction products. The modifier was shown to promote the materials reactivity to NH3 due to the catalytic activity of RuOx. The interaction with ammonia resulted in dipoles formation on the oxide surface along with reducing the grains net surface charge, established from the electron affinity increase and resistance decrease during NH3 exposure. The RuOx-catalyzed gas-solid interaction was deduced to proceed deeper than in the case of non-modified SnO2 and to yield nitrogen oxides (e.g. NO2), as was suggested by the oxidative character of gaseous products of NH3 interaction with RuOx-modified tin dioxide at 200 degrees C. (C) 2012 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos 000312358700033 Publication Date 2012-06-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-4005; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 5.401 Times cited 20 Open Access  
  Notes Approved Most recent IF: 5.401; 2012 IF: 3.535  
  Call Number UA @ lucian @ c:irua:105985 Serial 293  
Permanent link to this record
 

 
Author Volkov, V.V.; van Landuyt, J.; Marushkin, K.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. pdf  doi
openurl 
  Title LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas Type A1 Journal article
  Year 1997 Publication (down) Sensors and actuators : A : physical Abbreviated Journal Sensor Actuat A-Phys  
  Volume 62 Issue 1/3 Pages 624-632  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Highly effective IR light-emitting diodes operating at the wavelength 1.66 mu m and based on the buried heterostructure In0.88Ga0.12As0.26P0.74/ In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM),electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CK, gas sensor has been developed and fabricated an the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH4 gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested, It is shown that the proposed type of sensor can be used for the quantitative remote control of CH4 gas concentration (0.2-100%) via a fibre glass line up to a distance of 2 x 1 km. (C) 1997 Elsevier Science S.A.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos A1997YD90600029 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0924-4247; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.499 Times cited 3 Open Access  
  Notes Approved Most recent IF: 2.499; 1997 IF: 0.635  
  Call Number UA @ lucian @ c:irua:20455 Serial 1855  
Permanent link to this record
 

 
Author Van Echelpoel, R.; Schram, J.; Parrilla, M.; Daems, D.; Slosse, A.; Van Durme, F.; De Wael, K. url  doi
openurl 
  Title Electrochemical methods for on-site multidrug detection at festivals Type A1 Journal article
  Year 2022 Publication (down) Sensors & Diagnostics Abbreviated Journal  
  Volume 1 Issue 1 Pages 793-802  
  Keywords A1 Journal article; Engineering sciences. Technology; Antwerp Electrochemical and Analytical Sciences Lab (A-Sense Lab)  
  Abstract Two electrochemical methodologies, i.e. flowchart and dual-sensor, were developed to aid law enforcement present at festivals to obtain a rapid indication of the presence of four illicit drugs in suspicious samples encountered.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 2022-06-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access OpenAccess  
  Notes Approved no  
  Call Number UA @ admin @ c:irua:188521 Serial 8856  
Permanent link to this record
 

 
Author Hamidi-Asl, E.; Dardenne, F.; Blust, R.; De Wael, K. url  doi
openurl 
  Title An improved electrochemical aptasensor for chloramphenicol detection based on aptamer incorporated gelatine Type A1 Journal article
  Year 2015 Publication (down) Sensors Abbreviated Journal Sensors-Basel  
  Volume 15 Issue 4 Pages 7605-7618  
  Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)  
  Abstract Because of the biocompatible properties of gelatine and the good affinity of aptamers for their targets, the combination of aptamer and gelatine type B is reported as promising for the development of biosensing devices. Here, an aptamer for chloramphenicol (CAP) is mixed with different types of gelatine and dropped on the surface of disposable gold screen printed electrodes. The signal of the CAP reduction is investigated using differential pulse voltammetry. The diagnostic performance of the sensor is described and a detection limit of 1.83 x 10(-10) M is found. The selectivity and the stability of the aptasensor are studied and compared to those of other CAP sensors described in literature.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000354236100025 Publication Date 2015-03-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1424-8220 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.677 Times cited 21 Open Access  
  Notes ; Ezat Hamidi-Asl was financially supported by IOF-POC (University of Antwerp). ; Approved Most recent IF: 2.677; 2015 IF: 2.245  
  Call Number UA @ admin @ c:irua:126071 Serial 5464  
Permanent link to this record
 

 
Author Pilehvar, S.; Dierckx, T.; Blust, R.; Breugelmans, T.; De Wael, K. url  doi
openurl 
  Title An electrochemical impedimetric aptasensing platform for sensitive and selective detection of small molecules such as chloramphenicol Type A1 Journal article
  Year 2014 Publication (down) Sensors Abbreviated Journal Sensors-Basel  
  Volume 14 Issue 7 Pages 12059-12069  
  Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Applied Electrochemistry & Catalysis (ELCAT)  
  Abstract We report on the aptadetection of chloramphenicol (CAP) using electrochemical impedance spectroscopy. The detection principle is based on the changes of the interfacial properties of the electrode after the interaction of the ssDNA aptamers with the target molecules. The electrode surface is partially blocked due to the formation of the aptamer-CAP complex, resulting in an increase of the interfacial electron-transfer resistance of the redox probe detected by electrochemical impedance spectroscopy or cyclic voltammetry. We observed that the ratio of polarization resistance had a linear relationship with the concentrations of CAP in the range of 1.76127 nM, and a detection limit of 1.76 nM was obtained. The covalent binding of CAP-aptamer on the electrode surface combined with the unique properties of aptamers and impedimetric transduction leads to the development of a stable and sensitive electrochemical aptasensor for CAP.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000340035700041 Publication Date 2014-07-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1424-8220 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.677 Times cited 34 Open Access  
  Notes ; We are thankful to UA-DOCPRO and UA-BOFACA for financial support. ; Approved Most recent IF: 2.677; 2014 IF: 2.245  
  Call Number UA @ admin @ c:irua:117845 Serial 5592  
Permanent link to this record
 

 
Author Moro, G.; Cristofori, D.; Bottari, F.; Cattaruzza, E.; De Wael, K.; Moretto, L.M. url  doi
openurl 
  Title Redesigning an electrochemical MIP sensor for PFOS : practicalities and pitfalls Type A1 Journal article
  Year 2019 Publication (down) Sensors Abbreviated Journal Sensors-Basel  
  Volume 19 Issue 20 Pages 4433  
  Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)  
  Abstract There is a growing interest in the technological transfer of highly performing electrochemical sensors within portable analytical devices for the in situ monitoring of environmental contaminants, such as perfluorooctanesulfonic acid (PFOS). In the redesign of biomimetic sensors, many parameters should be taken into account from the working conditions to the electrode surface roughness. A complete characterization of the surface modifiers can help to avoid time-consuming optimizations and better interpret the sensor responses. In the present study, a molecularly imprinted polymer electrochemical sensor (MIP) for PFOS optimized on gold disk electrodes was redesigned on commercial gold screen-printed electrodes. However, its performance investigated by differential pulse voltammetry was found to be poor. Before proceeding with further optimization, a morphological study of the bare and modified electrode surfaces was carried out by scanning electron microscopy-energy-dispersive X-ray spectrometry (SEM-EDS), atomic force microscopy (AFM) and profilometry revealing an heterogeneous distribution of the polymer strongly influenced by the electrode roughness. The high content of fluorine of the target-template molecule allowed to map the distribution of the molecularly imprinted polymer before the template removal and to define a characterization protocol. This case study shows the importance of a multi-analytical characterization approach and identify significant parameters to be considered in similar redesigning studies.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000497864700081 Publication Date 2019-10-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1424-8220 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.677 Times cited Open Access  
  Notes ; ; Approved Most recent IF: 2.677  
  Call Number UA @ admin @ c:irua:164686 Serial 5808  
Permanent link to this record
 

 
Author Anaf, W.; Cabal, A.; Robbe, M.; Schalm, O. url  doi
openurl 
  Title Real-time wood behaviour : the use of strain gauges for preventive conservation applications Type A1 Journal article
  Year 2020 Publication (down) Sensors Abbreviated Journal  
  Volume 20 Issue 1 Pages 305  
  Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Antwerp Cultural Heritage Sciences (ARCHES)  
  Abstract Within the heritage field, the application of strain gauges on wood surfaces is a little-explored but inexpensive and effective method to analyse the environmental appropriateness of rooms for the wooden heritage collections they contain. This contribution proposes a wood sensor connected to a data logger to identify short moments with an elevated risk of harm. Two experiments were performed to obtain insights pertaining to the applicability of wood sensors to evaluate preservation conditions. (1) The representativeness of strain gauges on dummies was tested for their use in evaluating the preservation conditions of a range of wooden objects exposed to the same environment. For this, three situations were mimicked: a bare wood surface, a wood surface covered with a preparation layer, and a wood surface covered with a preparation and varnish layer. (2) The usability of strain gauges to monitor the wood behaviour in real-time measurements was tested with a monitoring campaign of almost two years in a church where a new heating system was installed. The results of both experiments are promising, and the authors encourage a broader application of strain gauges in the heritage field.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000510493100305 Publication Date 2020-01-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access  
  Notes ; This research was funded by the Belgian Federal Public Planning Service Science Policy (BELSPO) under project number BR/132/A6/AIRCHECQ. ; Approved Most recent IF: NA  
  Call Number UA @ admin @ c:irua:166595 Serial 6592  
Permanent link to this record
 

 
Author Truta, F.; Drăgan, A.-M.; Tertis, M.; Parrilla, M.; Slosse, A.; Van Durme, F.; De Wael, K.; Cristea, C. url  doi
openurl 
  Title Electrochemical rapid detection of methamphetamine from confiscated samples using a graphene-based printed platform Type A1 Journal article
  Year 2023 Publication (down) Sensors Abbreviated Journal  
  Volume 23 Issue 13 Pages 6193-18  
  Keywords A1 Journal article; Antwerp Electrochemical and Analytical Sciences Lab (A-Sense Lab)  
  Abstract Methamphetamine (MAP) is a highly addictive and illegal stimulant drug that has a significant impact on the central nervous system. Its detection in biological and street samples is crucial for various organizations involved in forensic medicine, anti-drug efforts, and clinical diagnosis. In recent years, nanotechnology and nanomaterials have played a significant role in the development of analytical sensors for MAP detection. In this study, a fast, simple, and cost-effective electrochemical sensor is presented that is used for the sensitive detection of MAP in confiscated street samples with a complex matrix. The optimized screen-printed sensor based on a carbon working electrode modified with graphene demonstrated an excellent limit of detection, good sensitivity, and a wide dynamic range (1–500 μM) for the target illicit drug both for standard solutions and real samples (seized samples, tap water, and wastewater samples). It can detect MAP at concentrations as low as 300 nM in real samples. This limit of detection is suitable for the rapid preliminary screening of suspicious samples in customs, ports, airports, and on the street. Furthermore, the sensor exhibits a good recovery rate, indicating its reliability and repeatability. This quality is crucial for ensuring consistent and accurate results during screening processes.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 001033277900001 Publication Date 2023-07-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1424-8220 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access OpenAccess  
  Notes Approved Most recent IF: NA  
  Call Number UA @ admin @ c:irua:198181 Serial 8857  
Permanent link to this record
 

 
Author Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. pdf  doi
openurl 
  Title Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations Type P1 Proceeding
  Year 2017 Publication (down) Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar Abbreviated Journal  
  Volume Issue Pages 303-311  
  Keywords P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first-principles calculations with Non-Equilibrium Green functions transport simulations. The intrinsic contact resistivity is found to saturate at similar to 2x10(-10) Omega.cm(2) with the doping concentration and sets an intrinsic limit to the ultimate contact resistance achievable for n-doped Si vertical bar amorphous-TiSi. This limit arises from the intrinsic properties of the semiconductor and of the metal such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting metals with a heavy electron effective mass helps reducing the interface intrinsic contact resistivity.  
  Address  
  Corporate Author Thesis  
  Publisher Electrochemical soc inc Place of Publication Pennington Editor  
  Language Wos 000426271800028 Publication Date 2017-10-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume 80 Series Issue 1 Edition  
  ISSN 978-1-62332-470-4; 978-1-60768-818-1 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 1 Open Access Not_Open_Access  
  Notes ; ; Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:149966 Serial 4976  
Permanent link to this record
 

 
Author Peeters, F.M.; Devreese, J.T. doi  openurl
  Title Hot magneto-phonon and electro-phonon resonances in heterostructures Type A1 Journal article
  Year 1992 Publication (down) Semiconductor science and technology: B Abbreviated Journal Semicond Sci Tech  
  Volume 7 Issue Pages 15-20  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos A1992HL26200006 Publication Date 2002-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242;1361-6641; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.19 Times cited 12 Open Access  
  Notes Approved CHEMISTRY, MEDICINAL 9/59 Q1 # CHEMISTRY, MULTIDISCIPLINARY 40/163 Q1 # COMPUTER SCIENCE, INFORMATION SYSTEMS 6/144 Q1 # COMPUTER SCIENCE, INTERDISCIPLINARY 10/104 Q1 #  
  Call Number UA @ lucian @ c:irua:2897 Serial 1491  
Permanent link to this record
 

 
Author Kastalsky, A.; Peeters, F.M.; Chan, W.K.; Florez, L.T.; Harbison, J.P. doi  openurl
  Title Novel nonlinear transport phenomena in a triangular quantum well Type A1 Journal article
  Year 1992 Publication (down) Semiconductor science and technology: B Abbreviated Journal Semicond Sci Tech  
  Volume 7 Issue Pages 530-532  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos A1992HL26200140 Publication Date 2002-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242;1361-6641; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.19 Times cited 4 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:3027 Serial 2380  
Permanent link to this record
 

 
Author Helm, M.; Hilber, W.; Fromherz, T.; Peeters, F.M.; Alavi, K.; Pathak, R.N. doi  openurl
  Title Bloch and localized electrons in semiconductor superlattices Type A1 Journal article
  Year 1994 Publication (down) Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume 9 Issue Pages 1989-1993  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1994PT27100023 Publication Date 2002-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242;1361-6641; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.19 Times cited 1 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:9370 Serial 244  
Permanent link to this record
 

 
Author Pereira, J.M.; Peeters, F.M.; Chaves, A.; Farias, G.A. pdf  doi
openurl 
  Title Klein tunneling in single and multiple barriers in graphene Type A1 Journal article
  Year 2010 Publication (down) Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume 25 Issue 3 Pages 033002,1-033002,9  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We review the transmission properties of carriers interacting with potential barriers in graphene. The tunneling of electrons and holes in quantum structures in graphene is found to display features that are in marked contrast with those of other systems. In particular, the interaction between the carriers with electrostatic potential barriers can be related to the propagation of electromagnetic waves in media with negative refraction indices, also known as metamaterials. This behavior becomes evident as one calculates the time evolution of wavepackets propagating across the barrier interface. In addition, we discuss the effect of trigonal warping on the tunneling through potential barriers.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000274318300004 Publication Date 2010-02-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242;1361-6641; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.305 Times cited 83 Open Access  
  Notes ; We want to acknowledge our collaborators in this work: P Vasilopoulos and M Barbier. This work was supported by the Brazilian Council for Research (CNPq), the Flemish Science Foundation (FWO-Vl) and the Belgian Science Policy (IAP). ; Approved Most recent IF: 2.305; 2010 IF: 1.333  
  Call Number UA @ lucian @ c:irua:80961 Serial 1764  
Permanent link to this record
 

 
Author Xu, W.; Peeters, F.M.; Devreese, J.T. openurl 
  Title Warm-electron transport in a two-dimensional semiconductor Type A1 Journal article
  Year 1992 Publication (down) Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume 7 Issue Pages 1251-1256  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1992JT73000006 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.19 Times cited 3 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:2915 Serial 3903  
Permanent link to this record
 

 
Author Zebrowski, D.P.; Peeters, F.M.; Szafran, B. pdf  doi
openurl 
  Title Driven spin transitions in fluorinated single- and bilayer-graphene quantum dots Type A1 Journal article
  Year 2017 Publication (down) Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume 32 Issue 6 Pages 065016  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Spin transitions driven by a periodically varying electric potential in dilute fluorinated graphene quantum dots are investigated. Flakes of monolayer graphene as well as electrostatic electron traps induced in bilayer graphene are considered. The stationary states obtained within the tight-binding approach are used as the basis for description of the system dynamics. The dilute fluorination of the top layer lifts the valley degeneracy of the confined states and attenuates the orbital magnetic dipole moments due to current circulation within the flake. The spin-orbit coupling introduced by the surface deformation of the top layer induced by the adatoms allows the spin flips to be driven by the AC electric field. For the bilayer quantum dots the spin flip times is substantially shorter than the spin relaxation. Dynamical effects including many-photon and multilevel transitions are also discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000402405800007 Publication Date 2017-04-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 2.305 Times cited Open Access  
  Notes ; This work was supported by the National Science Centre according to decision DEC-2013/11/B/ST3/03837 and by the Flemish Science Foundation (FWO-VL). ; Approved Most recent IF: 2.305  
  Call Number UA @ lucian @ c:irua:144238 Serial 4646  
Permanent link to this record
 

 
Author Denneulin, T.; Rouvière, J.L.; Béché, A.; Py, M.; Barnes, J.P.; Rochat, N.; Hartmann, J.M.; Cooper, D. pdf  doi
openurl 
  Title The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography Type A1 Journal article
  Year 2011 Publication (down) Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume 26 Issue 12 Pages 1-10  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Si/Si(1 − x − y)GexCy superlattices are used in the construction of new microelectronic architectures such as multichannel transistors. The introduction of carbon in SiGe allows for compensation of the strain and to avoid plastic relaxation. However, the formation of incoherent β-SiC clusters during annealing limits the processability of SiGeC. This precipitation leads to a modification of the strain in the alloy due to the reduction of the substitutional carbon content. Here, we investigated the strain in annealed Si/Si0.744Ge0.244C0.012 superlattices grown by reduced pressure chemical vapour deposition using dark-field electron holography. The variation of the substitutional C content was calculated by correlating the results with finite-element simulations. The obtained values were then compared with Fourier-transformed infrared spectrometry measurements. It was shown that after annealing for 2 min at 1050 °C carbon no longer has any influence on strain in the superlattice, which behaves like pure SiGe. However, a significant proportion of substitutional C atoms remain in a third-nearest neighbour (3nn) configuration. It was deduced that the influence of 3nn C on strain is negligible and that only isolated atoms have a significant contribution. It was also proposed that the 3nn configuration is an intermediary step during the formation of SiC clusters.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000300151300010 Publication Date 2011-11-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.305 Times cited Open Access  
  Notes Approved Most recent IF: 2.305; 2011 IF: 1.723  
  Call Number UA @ lucian @ c:irua:136427 Serial 4508  
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Author Prabhakara, V.; Jannis, D.; Béché, A.; Bender, H.; Verbeeck, J. url  doi
openurl 
  Title Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique Type A1 Journal article
  Year 2019 Publication (down) Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume Issue Pages  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Moiré fringes are used throughout a wide variety of applications in physics and

engineering to bring out small variations in an underlying lattice by comparing with another reference lattice. This method was recently demonstrated in Scanning Transmission Electron Microscopy imaging to provide local strain measurement in crystals by comparing the crystal lattice with the scanning raster that then serves as the reference. The images obtained in this way contain a beating fringe pattern with a local period that represents the deviation of the lattice from the reference. In order to obtain the actual strain value, a region containing a full period of the fringe is required, which results in a compromise between strain sensitivity and spatial resolution. In this paper we propose an advanced setup making use of an optimised scanning pattern and a novel phase stepping demodulation scheme. We demonstrate the novel method on a series of 16 nm Si-Ge semiconductor FinFET devices in which strain plays a crucial role in modulating the charge carrier mobility. The obtained results are compared with both Nano-beam diffraction and the recently proposed Bessel beam diffraction technique. The setup provides a much improved spatial resolution over conventional moiré imaging in STEM while at the same time being fast and requiring no specialised diffraction camera as opposed to the diffraction techniques we compare to.
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000537721200002 Publication Date 2019-11-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.305 Times cited 8 Open Access  
  Notes The Qu-Ant-EM microscope and the direct electron detector used in the diffraction experiments was partly funded by the Hercules fund from the Flemish Government. This project has received funding from the GOA project “Solarpaint” of the University of Antwerp. We would also like to thank Dr. Thomas Nuytten and Prof. Dr. Wilfried Vandervorst from IMEC, Leuven for their continuous support and collaboration with the project. Approved Most recent IF: 2.305  
  Call Number EMAT @ emat @c:irua:165794 Serial 5445  
Permanent link to this record
 

 
Author Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. pdf  doi
openurl 
  Title Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures Type P1 Proceeding
  Year 2017 Publication (down) Semiconductor Process Integration 10 Abbreviated Journal  
  Volume Issue Pages 241-252  
  Keywords P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees C. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during the Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions.  
  Address  
  Corporate Author Thesis  
  Publisher Electrochemical soc inc Place of Publication Pennington Editor  
  Language Wos 000426269800024 Publication Date 2017-10-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume 80 Series Issue 4 Edition  
  ISSN 978-1-60768-821-1; 978-1-62332-473-5 ISBN Additional Links UA library record; WoS full record  
  Impact Factor Times cited Open Access Not_Open_Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:149965 Serial 4966  
Permanent link to this record
 

 
Author Schryvers, D.; Lahjouji, D.E.; Slootmaekers, B.; Potapov, P.L. doi  openurl
  Title HREM investigation of martensite precursor effects and stacking sequences in Ni-Mn-Ti alloys Type A1 Journal article
  Year 1996 Publication (down) Scripta metallurgica et materialia Abbreviated Journal Scripta Mater  
  Volume 35 Issue Pages 1235-1241  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York Editor  
  Language Wos A1996VL92800019 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.224 Times cited 2 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15427 Serial 1506  
Permanent link to this record
 

 
Author Yang, Z.; Tirry, W.; Schryvers, D. pdf  doi
openurl 
  Title Analytical TEM investigations on concentration gradients surrounding Ni4Ti3 precipitates in Ni-Ti shape memory material Type A1 Journal article
  Year 2005 Publication (down) Scripta materialia Abbreviated Journal Scripta Mater  
  Volume 52 Issue 11 Pages 1129-1134  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000228190200010 Publication Date 2005-03-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.747 Times cited 49 Open Access  
  Notes GOA project; MCRTN-FP6-505226 Multimat Approved Most recent IF: 3.747; 2005 IF: 2.228  
  Call Number UA @ lucian @ c:irua:55687 Serial 110  
Permanent link to this record
 

 
Author Li, K.; Béché, A.; Song, M.; Sha, G.; Lu, X.; Zhang, K.; Du, Y.; Ringer, S.P.; Schryvers, D. doi  openurl
  Title Atomistic structure of Cu-containing \beta" precipitates in an Al-Mg-Si-Cu alloy Type A1 Journal article
  Year 2014 Publication (down) Scripta materialia Abbreviated Journal Scripta Mater  
  Volume 75 Issue Pages 86-89  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The beta '' precipitates in a peak-aged Al-Mg-Si-Cu alloy were measured with an average composition of 28.6Al-38.7Mg-26.5Si-5.17Cu (at.%) using atom probe tomography. High-angle annular dark-field observations revealed that Cu incompletely substitutes for the Mg-1 and Si-3 columns, preferentially for one column in each pair of Si-3. Cu-free Si columns form a parallelogram-shaped network that constitutes the basis of subsequent precipitates in the system, with a = 0.37 nm, b = 0.38 nm, gamma = 113 degrees and c = 0.405 nm. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000331025200022 Publication Date 2013-12-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.747 Times cited 22 Open Access  
  Notes Approved Most recent IF: 3.747; 2014 IF: 3.224  
  Call Number UA @ lucian @ c:irua:115749 Serial 201  
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Author Santamarta, R.; Schryvers, D. pdf  doi
openurl 
  Title Effect of amorphous-crystalline interfaces on the martensitic transformation in Ti50Ni25Cu25 Type A1 Journal article
  Year 2004 Publication (down) Scripta materialia Abbreviated Journal Scripta Mater  
  Volume 50 Issue Pages 1423-1427  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000221009500002 Publication Date 2004-04-13  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.747 Times cited 29 Open Access  
  Notes Approved Most recent IF: 3.747; 2004 IF: 2.112  
  Call Number UA @ lucian @ c:irua:48379 Serial 795  
Permanent link to this record
 

 
Author Shi, H.; Pourbabak, S.; Van Humbeeck, J.; Schryvers, D. pdf  doi
openurl 
  Title Electron microscopy study of Nb-rich nanoprecipitates in NiTiNb and their influence on the martensitic transformation Type A1 Journal article
  Year 2012 Publication (down) Scripta materialia Abbreviated Journal Scripta Mater  
  Volume 67 Issue 12 Pages 939-942  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Nb-rich nanoprecipitates in the matrix of an annealed commercial NiTiNb alloy are investigated by scanning and transmission electron microscopy, including slice-and-view and chemical analysis. The precipitates have a diameter of around 100 nm, are faceted and have a cube-on-cube relation with the B2 matrix. In situ TEM cooling shows that the martensitic transformation is hampered by the presence of these precipitates. The latter could explain the increase in hysteresis when compared with the binary system.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000311135000005 Publication Date 2012-08-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.747 Times cited 29 Open Access  
  Notes Fwo Approved Most recent IF: 3.747; 2012 IF: 2.821  
  Call Number UA @ lucian @ c:irua:101486 Serial 971  
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Author Cao, S.; Somsen, C.; Croitoru, M.; Schryvers, D.; Eggeler, G. pdf  doi
openurl 
  Title Focused ion beam/scanning electron microscopy tomography and conventional transmission electron microscopy assessment of Ni4Ti3 morphology in compression-aged Ni-rich Ni-Ti single crystals Type A1 Journal article
  Year 2010 Publication (down) Scripta materialia Abbreviated Journal Scripta Mater  
  Volume 62 Issue 6 Pages 399-402  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)  
  Abstract The size, morphology and configuration of Ni4Ti3 precipitates in a single-crystal NiTi alloy have been investigated by two-dimensional transmission electron microscopy-based image analysis and three-dimensional reconstruction from slice-and-view images obtained in a focused ion beam/scanning electron microscopy (FIB/SEM) dual-beam system. Average distances between the precipitates measured along the compression direction correlate well between both techniques, while particle shape and configuration data is best obtained from FIB/SEM. Precipitates form pockets of B2 of 0.54 ìm in the compression direction and 1 ìm perpendicular to the compression direction.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000275072700020 Publication Date 2009-12-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.747 Times cited 16 Open Access  
  Notes Fwo Approved Most recent IF: 3.747; 2010 IF: 2.820  
  Call Number UA @ lucian @ c:irua:79817 Serial 1246  
Permanent link to this record
 

 
Author Idrissi, H.; Ryelandt, L.; Veron, M.; Schryvers, D.; Jacques, P.J. pdf  doi
openurl 
  Title Is there a relationship between the stacking fault character and the activated mode of plasticity of FeMn-based austenitic steels? Type A1 Journal article
  Year 2009 Publication (down) Scripta materialia Abbreviated Journal Scripta Mater  
  Volume 60 Issue 11 Pages 941-944  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract By changing the testing temperature, an austenitic FeMnAlSi alloy presents either å-martensite transformation or mechanical twinning during straining. In order to understand the nucleation and growth mechanisms involved in both phenomena, defects and particularly stacking faults, were characterized by transmission electron microscopy. It is observed that the character of the stacking faults also changes (from extrinsic to intrinsic) together with the temperature and the activated mode of plasticity.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000265359900005 Publication Date 2009-02-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.747 Times cited 84 Open Access  
  Notes Iap Approved Most recent IF: 3.747; 2009 IF: 2.949  
  Call Number UA @ lucian @ c:irua:77276 Serial 1751  
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Author Bartova, B.; Schryvers, D.; Yang, Z.; Ignacova, S.; Sittner, P. pdf  doi
openurl 
  Title Microstructure and precipitates in as-cast Co38Ni33Al29 shape memory alloy Type A1 Journal article
  Year 2007 Publication (down) Scripta materialia Abbreviated Journal Scripta Mater  
  Volume 57 Issue 1 Pages 37-40  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000246632900010 Publication Date 2007-04-13  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.747 Times cited 22 Open Access  
  Notes Approved Most recent IF: 3.747; 2007 IF: 2.481  
  Call Number UA @ lucian @ c:irua:64753 Serial 2059  
Permanent link to this record
 

 
Author Potapov, P.; Shelyakov, A.; Schryvers, D. doi  openurl
  Title On the crystal structure of TiNi-Cu martensite Type A1 Journal article
  Year 2001 Publication (down) Scripta materialia Abbreviated Journal Scripta Mater  
  Volume 44 Issue Pages 1-7  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000166808100001 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.747 Times cited 36 Open Access  
  Notes Approved Most recent IF: 3.747; 2001 IF: 1.130  
  Call Number UA @ lucian @ c:irua:48378 Serial 2433  
Permanent link to this record
 

 
Author Idrissi, H.; Renard, K.; Schryvers, D.; Jacques, P.J. pdf  doi
openurl 
  Title On the relationship between the twin internal structure and the work-hardening rate of TWIP steels Type A1 Journal article
  Year 2010 Publication (down) Scripta materialia Abbreviated Journal Scripta Mater  
  Volume 63 Issue 10 Pages 961-964  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract FeMnC and FeMnSiAl TWIP steels deformed under the same conditions exhibit different work-hardening rates. The present study investigates the microstructure of plastically deformed FeMnC and FeMnSiAl samples, particularly the internal structure of the mechanically generated twins and their topology at the grain scale. Twins in the FeMnC steel are finer and full of sessile dislocations, rendering this material distinctly stronger with an improved work-hardening rate.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000282461800003 Publication Date 2010-07-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.747 Times cited 145 Open Access  
  Notes Iap Approved Most recent IF: 3.747; 2010 IF: 2.820  
  Call Number UA @ lucian @ c:irua:84472 Serial 2452  
Permanent link to this record
 

 
Author Renard, K.; Idrissi, H.; Schryvers, D.; Jacques, P.J. pdf  doi
openurl 
  Title On the stress state dependence of the twinning rate and work hardening in twinning-induced plasticity steels Type A1 Journal article
  Year 2012 Publication (down) Scripta materialia Abbreviated Journal Scripta Mater  
  Volume 66 Issue 12 Pages 966-971  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The influence of the stress state on the twinning rate and work hardening is studied in the case of an FeMnC TWIP steel strained in uniaxial tension, simple shear and rolling. The resulting stressstrain responses exhibit marked differences. The twinning rate, number of activated twinning systems in each grain, twin thickness and transmission of twins across grain boundaries are dependent on the imposed stress state during straining. Relationships between twin features and macroscopic work hardening rate are established.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000304641500004 Publication Date 2012-02-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.747 Times cited 41 Open Access  
  Notes Iap Approved Most recent IF: 3.747; 2012 IF: 2.821  
  Call Number UA @ lucian @ c:irua:98374 Serial 2454  
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