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“Pivotal role of magnetic ordering and strain in lattice thermal conductivity of chromium-trihalide monolayers”. Pandey T, Peeters FM, Milošević, MV, 2D materials 9, 015034 (2022). http://doi.org/10.1088/2053-1583/AC427E
Abstract: Understanding the coupling between spin and phonons is critical for controlling the lattice thermal conductivity (kappa ( l )) in magnetic materials, as we demonstrate here for CrX3 (X = Br and I) monolayers. We show that these compounds exhibit large spin-phonon coupling (SPC), dominated by out-of-plane vibrations of Cr atoms, resulting in significantly different phonon dispersions in ferromagnetic (FM) and paramagnetic (PM) phases. Lattice thermal conductivity calculations provide additional evidence for strong SPC, where particularly large kappa ( l ) is found for the FM phase. Most strikingly, PM and FM phases exhibit radically different behavior with tensile strain, where kappa ( l ) increases with strain for the PM phase, and strongly decreases for the FM phase-as we explain through analysis of phonon lifetimes and scattering rates. Taken all together, we uncover the high significance of SPC on the phonon transport in CrX3 monolayers, a result extendable to other 2D magnetic materials, that will be useful in further design of thermal spin devices.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 5.5
Times cited: 2
DOI: 10.1088/2053-1583/AC427E
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“Superconductivity in gallenene”. Petrov M, Bekaert J, Milošević, MV, 2d Materials 8, 035056 (2021). http://doi.org/10.1088/2053-1583/AC0713
Abstract: Among the large variety of two-dimensional (2D) materials discovered to date, elemental monolayers that host superconductivity are very rare. Using ab initio calculations we show that recently synthesized gallium monolayers, coined gallenene, are intrinsically superconducting through electron-phonon coupling. We reveal that Ga-100 gallenene, a planar monolayer isostructural with graphene, is the structurally simplest 2D superconductor to date, furthermore hosting topological edge states due to its honeycomb structure. Our anisotropic Eliashberg calculations show distinctly three-gap superconductivity in Ga-100, in contrast to the alternative buckled Ga-010 gallenene which presents a single anisotropic superconducting gap. Strikingly, the critical temperature (T ( c )) of gallenene is in the range of 7-10 K, exceeding the T ( c ) of bulk gallium from which it is exfoliated. Finally we explore chemical functionalization of gallenene with hydrogen, and report induced multigap superconductivity with an enhanced T ( c ) in the resulting gallenane compound.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 6.937
Times cited: 8
DOI: 10.1088/2053-1583/AC0713
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“Tunable coupling of terahertz Dirac plasmons and phonons in transition metal dichalcogenide-based van der Waals heterostructures”. Lavor IR, Chaves A, Peeters FM, Van Duppen B, 2d Materials , 015018 (2021). http://doi.org/10.1088/2053-1583/AC37A8
Abstract: Dirac plasmons in graphene hybridize with phonons of transition metal dichalcogenides (TMDs) when the materials are combined in so-called van der Waals heterostructures (vdWh), thus forming surface plasmon-phonon polaritons (SPPPs). The extend to which these modes are coupled depends on the TMD composition and structure, but also on the plasmons' properties. By performing realistic simulations that account for the contribution of each layer of the vdWh separately, we calculate how the strength of plasmon-phonon coupling depends on the number and composition of TMD layers, on the graphene Fermi energy and the specific phonon mode. From this, we present a semiclassical theory that is capable of capturing all relevant characteristics of the SPPPs. We find that it is possible to realize both strong and ultra-strong coupling regimes by tuning graphene's Fermi energy and changing TMD layer number.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 6.937
Times cited: 1
DOI: 10.1088/2053-1583/AC37A8
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“Topologically protected moiré, exciton at a twist-boundary in a van der Waals heterostructure”. Chaves A, Covaci L, Peeters FM, Milošević, MV, 2D materials 9, 025012 (2022). http://doi.org/10.1088/2053-1583/ac529d
Abstract: A twin boundary in one of the layers of a twisted van der Waals heterostructure separates regions with near opposite inter-layer twist angles. In a MoS<sub>2</sub>/WSe<sub>2</sub>bilayer, the regions with<inline-formula><tex-math><?CDATA $Rh^h$?></tex-math><math overflow=“scroll”><msubsup><mi>R</mi><mi>h</mi><mi>h</mi></msubsup></math><inline-graphic href=“tdmac529dieqn1.gif” type=“simple” /></inline-formula>and<inline-formula><tex-math><?CDATA $Rh^X$?></tex-math><math overflow=“scroll”><msubsup><mi>R</mi><mi>h</mi><mi>X</mi></msubsup></math><inline-graphic href=“tdmac529dieqn2.gif” type=“simple” /></inline-formula>stacking registry that defined the sub-lattices of the moiré honeycomb pattern would be mirror-reflected across such a twist boundary. In that case, we demonstrate that topologically protected chiral moiré exciton states are confined at the twist boundary. These are one-dimensional and uni-directional excitons with opposite velocities for excitons composed by electronic states with opposite valley/spin character, enabling intrinsic, guided, and far reaching valley-polarized exciton currents.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 5.5
Times cited: 3
DOI: 10.1088/2053-1583/ac529d
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“Tailoring high-frequency magnonics in monolayer chromium trihalides”. Menezes RM, Šabani D, Bacaksiz C, de Souza Silva CC, Milošević, MV, 2D materials 9, 025021 (2022). http://doi.org/10.1088/2053-1583/ac5bf3
Abstract: Monolayer chromium-trihalides, the archetypal two-dimensional (2D) magnetic materials, are readily suggested as a promising platform for high-frequency magnonics. Here we detail the spin-wave properties of monolayer CrBr<sub>3</sub>and CrI<sub>3</sub>, using spin-dynamics simulations parametrized from the first principles. We reveal that spin-wave dispersion can be tuned in a broad range of frequencies by strain, paving the way towards flexo-magnonic applications. We further show that ever-present halide vacancies in these monolayers host sufficiently strong Dzyaloshinskii-Moriya interaction to scatter spin-waves, which promotes design of spin-wave guides by defect engineering. Finally we discuss the spectra of spin-waves propagating across a moiré-periodic modulation of magnetic parameters in a van der Waals heterobilayer, and show that the nanoscale moiré periodicities in such samples are ideal for realization of a magnonic crystal in the terahertz frequency range. Recalling the additional tunability of magnetic 2D materials by electronic gating, our results situate these systems among the front-runners for prospective high-frequency magnonic applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 5.5
DOI: 10.1088/2053-1583/ac5bf3
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“Picometer-precision few-tilt ptychotomography of 2D materials”. Hofer C, Mustonen K, Skakalova V, Pennycook TJ, 2D materials 10, 035029 (2023). http://doi.org/10.1088/2053-1583/ACDD80
Abstract: From ripples to defects, edges and grain boundaries, the 3D atomic structure of 2D materials is critical to their properties. However the damage inflicted by conventional 3D analysis precludes its use with fragile 2D materials, particularly for the analysis of local defects. Here we dramatically increase the potential for precise local 3D atomic structure analysis of 2D materials, with both greatly improved dose efficiency and sensitivity to light elements. We demonstrate light atoms can now be located in complex 2D materials with picometer precision at doses 30 times lower than previously possible. Moreover we demonstrate this using WS2, in which the light atoms are practically invisible to conventional methods at low doses. The key advance is combining the concept of few tilt tomography with highly dose efficient ptychography in scanning transmission electron microscopy. We further demonstrate the method experimentally with the even more challenging and newly discovered 2D CuI, leveraging a new extremely high temporal resolution camera.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.5
DOI: 10.1088/2053-1583/ACDD80
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“Goodenough-Kanamori-Anderson high-temperature ferromagnetism in tetragonal transition-metal xenes”. Yorulmaz U, Šabani D, Sevik C, Milošević, MV, 2D materials 11, 035013 (2024). http://doi.org/10.1088/2053-1583/AD3E08
Abstract: Seminal Goodenough-Kanamori-Anderson (GKA) rules provide an inceptive understanding of the superexchange interaction of two magnetic metal ions bridged with an anion, and suggest fostered ferromagnetic interaction for orthogonal bridging bonds. However, there are no examples of two-dimensional (2D) materials with structure that optimizes the GKA arguments towards enhanced ferromagnetism and its critical temperature. Here we reveal that an ideally planar GKA ferromagnetism is indeed stable in selected tetragonal transition-metal xenes (tTMXs), with Curie temperature above 300 K found in CrC and MnC. We provide the general orbitally-resolved analysis of magnetic interactions that supports the claims and sheds light at the mechanisms dominating the magnetic exchange process in these structures. Furthermore, we propose the set of three GKA-like rules that will guarantee room temperature ferromagetnism. With recent advent of epitaxially-grown tetragonal 2D materials, our findings earmark tTMXs for facilitated spintronic and magnonic applications, or as a desirable magnetic constituent of functional 2D heterostructures.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 5.5
DOI: 10.1088/2053-1583/AD3E08
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“Evidence of magnetostrictive effects on STT-MRAM performance by atomistic and spin modeling”. Sankaran K, Swerts J, Carpenter R, Couet S, Garello K, Evans RFL, Rao S, Kim W, Kundu S, Crotti D, Kar GS, Pourtois G, 2018 Ieee International Electron Devices Meeting (iedm) (2018)
Abstract: For the first time, we demonstrate, using an atomistic description of a 30nm diameter spin-transfer-torque magnetic random access memories (STT-MRAM), that the difference in mechanical properties of its sub-nanometer layers induces a high compressive strain in the magnetic tunnel junction (MTJ) and leads to a detrimental magnetostrictive effect. Our model explains the issues met in engineering the electrical and magnetic performances in scaled STT-MRAM devices. The resulting high compressive strain built in the stack, particularly in the MgO tunnel barrier (t-MgO), and its associated non-uniform atomic displacements, impacts on the quality of the MTJ interface and leads to strain relieve mechanisms such as surface roughness and adhesion issues. We illustrate that the strain gradient induced by the different materials and their thicknesses in the stacks has a negative impact on the tunnel magneto-resistance (TMR), on the magnetic nucleation process and on the STT-MRAM performance.
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“First-principles perspective on poling mechanisms and ferroelectric/antiferroelectric behavior of Hf1-xZrxO2 for FEFET applications”. Clima S, McMitchell SRC, Florent K, Nyns L, Popovici M, Ronchi N, Di Piazza L, Van Houdt J, Pourtois G, 2018 Ieee International Electron Devices Meeting (iedm) (2018)
Abstract: We investigate at the atomic level the most probable phase transformations under strain, that are responsible for the ferroelectric/ antiferroelectric behavior in Hf1-xZrxO2 materials. Four different crystalline phase transformations exhibit a polar/non-polar transition: monoclinic-to-orthorhombic requires a gliding strain tensor, orthorhombic-to-orthorhombic transformation does not need strain to polarize the material, whereas tetragonal-to-cubic cell compression and tetragonal-to-orthorhombic cell elongation destabilizes the non-polar tetragonal phase, facilitating the transition towards a polar atomic configuration, therefore changing the polarization-electric field loop from antiferroelectric to ferroelectric. Oxygen vacancies can reduce drastically the polarization reversal barriers.
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Getting rid of anti-solvents: gas quenching for high performance perovskite solar cells”. Conings B, Babayigit A, Klug M, Bai S, Gauquelin N, Sakai N, Wang JT-W, Verbeeck J, Boyen H-G, Snaith H, 2018 Ieee 7th World Conference On Photovoltaic Energy Conversion (wcpec)(a Joint Conference Of 45th Ieee Pvsc, 28th Pvsec &, 34th Eu Pvsec) (2018). http://doi.org/10.1109/PVSC.2018.8547987
Abstract: As the field of perovskite optoelectronics developed, a plethora of strategies has arisen to control their electronic and morphological characteristics for the purpose of producing high efficiency devices. Unfortunately, despite this wealth of deposition approaches, the community experiences a great deal of irreproducibility between different laboratories, batches and preparation methods. Aiming to address this issue, we developed a simple deposition method based on gas quenching that yields smooth films for a wide range of perovskite compositions, in single, double, triple and quadruple cation varieties, and produces planar heterojunction devices with competitive efficiencies, so far up to 20%.
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
DOI: 10.1109/PVSC.2018.8547987
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“Titanium (germano-)silicides featuring 10-9 Ω.cm2 contact resistivity and improved compatibility to advanced CMOS technology”. Yu H, Schaekers M, Chew SA, Eyeraert J-L, Dabral A, Pourtois G, Horiguchi N, Mocuta D, Collaert N, De Meyer K, 2018 18th International Workshop On Junction Technology (iwjt) , 80 (2018)
Abstract: uIn this work, we discuss three novel Ti (germano-)silicidation techniques featuring respectively the pre-contact amorphization implantation (PCAI), the TiSi co-deposition, and Ti atomic layer deposition (ALD). All three techniques form TiSix(Ge-y) contacts with ultralow contact resistivity (rho(c)) of (1-3)x10(-9) Omega.cm(2) on both highly doped n-Si and p-SiGe substrates: these techniques meet rho(c) requirement of 5-14 nm CMOS technology and feature unified CMOS contact solutions. We further discuss the compatibility of these techniques to the realistic CMOS transistor fabrication.
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Spectral force approach to solve the time-dependent Wigner-Liouville equation”. Van de Put M, Thewissen M, Magnus W, Sorée B, Sellier JM, 2014 International Workshop On Computational Electronics (iwce) (2014)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Alternative metals for advanced interconnects”. Adelmann C, Wen LG, Peter AP, Pourtois G, et al, 2014 Ieee International Interconnect Technology Conference / Advanced Metallization Conference (iitc/amc) , 173 (2014)
Abstract: We discuss the selection criteria for alternative metals in order to fulfill the requirements necessary for interconnects at half pitch values below 10 nm. The performance of scaled interconnects using transition metal germanides and CoAl alloys as metallization are studied and compared to conventional Cu and W interconnects.
Keywords: P1 Proceeding; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Exploring alternative metals to Cu and W for interconnects : an ab initio Insight”. Sankaran K, Clima S, Mees M, Adelmann C, Tokei Z, Pourtois G, 2014 Ieee International Interconnect Technology Conference / Advanced Metallization Conference (iitc/amc) , 193 (2014)
Abstract: The properties of alternative metals to Cu and W for interconnect applications are reviewed based on first-principles simulations and benchmarked in terms of intrinsic bulk resistivity and electromigration.
Keywords: P1 Proceeding; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Perspective of tunnel-FET for future low-power technology nodes”. Verhulst AS, Verreck D, Smets Q, Kao K-H, Van de Put M, Rooyackers R, Sorée B, Vandooren A, De Meyer K, Groeseneken G, Heyns MM, Mocuta A, Collaert N, Thean AV-Y, 2014 Ieee International Electron Devices Meeting (iedm) (2014)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Ciliary white light generated during femtosecond laser ablation on transparent dielectrics”. Liu Y, Brelet Y, He Z, Yu L, Mitryukovskiy S, Houard A, Forestier B, Couairon A, Mysyrowicz A, 2013 Conference On And International Quantum Electronics Conference Lasers And Electro-optics Europe (cleo Europe/iqec) (2013)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors”. Verreck D, Van de Put ML, Verhulst AS, Sorée B, Magnus W, Dabral A, Thean A, Groeseneken G, 18th International Workshop On Computational Electronics (iwce 2015) (2015). http://doi.org/10.1109/IWCE.2015.7301988
Abstract: A carefully chosen heterostructure can significantly boost the performance of tunnel field-effect transistors (TFET). Modelling of these hetero-TFETs requires a quantum mechanical (QM) approach with an accurate band structure to allow for a correct description of band-to-band-tunneling. We have therefore developed a fully QM 2D solver, combining for the first time a full zone 15-band envelope function formalism with a spectral approach, including a heterostructure basis set transformation. Simulations of GaSb/InAs broken gap TFETs illustrate the wide body capabilities and transparant transmission analysis of the formalism.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
DOI: 10.1109/IWCE.2015.7301988
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“Analytic solution of Ando's surface roughness model with finite domain distribution functions”. Moors K, Sorée B, Magnus W, 18th International Workshop On Computational Electronics (iwce 2015) (2015)
Abstract: Ando's surface roughness model is applied to metallic nanowires and extended beyond small roughness size and infinite barrier limit approximations for the wavefunction overlaps, such as the Prange-Nee approximation. Accurate and fast simulations can still be performed without invoking these overlap approximations by averaging over roughness profiles using finite domain distribution functions to obtain an analytic solution for the scattering rates. The simulations indicate that overlap approximations, while predicting a resistivity that agrees more or less with our novel approach, poorly estimate the underlying scattering rates. All methods show that a momentum gap between left- and right-moving electrons at the Fermi level, surpassing a critical momentum gap, gives rise to a substantial decrease in resistivity.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Modeling of inter-ribbon tunneling in graphene”. Van de Put ML, Vandenberghe WG, Magnus W, Sorée B, Fischetti MV, 18th International Workshop On Computational Electronics (iwce 2015) (2015)
Abstract: The tunneling current between two crossed graphene ribbons is described invoking the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method. Results indicate that the density of states is the most important factor determining the tunneling current between small (similar to nm) ribbons. The quasi-one dimensional nature of graphene nanoribbons is shown to result in resonant tunneling.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“The effect of Y2O3 and YFeO3 additions on the critical current density of YBCO coated conductors”. Lao M, Eisterer M, Stadel O, Meledin A, Van Tendeloo G, 1-4 (2014). http://doi.org/10.1088/1742-6596/507/2/022012
Abstract: The pinning mechanism of MOCVD-grown YBCO coated conductors with Y2O3 precipitates was investigated by angle-resolved transport measurement of Je in a wide range of temperature and magnetic fields. Aside from the Y2O3 nanoprecipitates, a-axis grains and threading dislocation along the c-axis were found in the YBCO layer. The Y2O3 precipitates are less effective pinning centers at lower temperature. The tapes with precipitates show a higher anisotropy with larger J(c) at H parallel to ab than H parallel to c. This behavior was attributed to the preferred alignment of the nanoprecipitates along the ab-plane.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 1
DOI: 10.1088/1742-6596/507/2/022012
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“High resolution electron microscopy from imaging towards measuring”. Van Aert S, den Dekker AJ, van den Bos A, Van Dyck D ... IEEE International Instrumentation and Measurement Technology Conference
T2 – Rediscovering measurement in the age of informatics : proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference (IMTC), 2001: vol 3. Ieee, page 2081 (2001).
Keywords: H2 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
DOI: 10.1109/IMTC.2001.929564
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“Many-body electron correlations in graphene”. Neilson D, Perali A, Zarenia M, (mbt18) 702, 012008 (2016). http://doi.org/10.1088/1742-6596/702/1/012008
Abstract: The conduction electrons in graphene promise new opportunities to access the region of strong many-body electron-electron correlations. Extremely high quality, atomically flat two-dimensional electron sheets and quasi-one-dimensional electron nanoribbons with tuneable band gaps that can be switched on by gates, should exhibit new many-body phenomena that have long been predicted for the regions of phase space where the average Coulomb repulsions between electrons dominate over their Fermi energies. In electron nanoribbons a few nanometres wide etched in monolayers of graphene, the quantum size effects and the van Hove singularities in their density of states further act to enhance electron correlations. For graphene multilayers or nanoribbons in a double unit electron-hole geometry, it is possible for the many-body electron-hole correlations to be made strong enough to stabilise high-temperature electron- hole superfluidity.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
Times cited: 3
DOI: 10.1088/1742-6596/702/1/012008
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“Role of graphene inter layer on the formation of the MoS2 –, CZTS interface during growth”. Vishwakarma M, Thota N, Karakulina O, Hadermann J, Mehta BR, (icc-2017) (2018). http://doi.org/10.1063/1.5033000
Abstract: The growth of MoS2 layer near the Mo/CZTS interface during sulphurization process can have an impact on back contact cell parameters (series resistance and fill factor) depending upon the thickness or quality of MoS2. This study reports the dependence of the thickness of interfacial MoS2 layer on the growth of graphene at the interface between molybdenum back contact and deposited CZTS layer. The graphene layer reduces the accumulation of Zn/ZnS, Sn/SnO2 and formation of pores near the MoS2-CZTS interface. The use of graphene as interface layer can be potentially useful for improving the quality of Mo/MoS2/CZTS interface.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 1
DOI: 10.1063/1.5033000
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“Machine Learning for Fast Characterization of Magnetic Logic Devices”. Kaintura A, Foss K, Couckuyt I, Dhaene T, Zografos O, Vaysset A, Sorée B, (edaps 2018) (2018)
Abstract: Non-charge-based logic devices are promising candidates for future logic circuits. Interest in studying and developing these devices has grown dramatically in the past decade as they possess key advantages over conventional CMOS technology. Due to their novel designs, a large number of micromagnetic simulations are required to fully characterize the behavior of these devices. The number and complexity of these simulations place large computational requirements on device development. We use state-of-the-art machine learning techniques to expedite identification of their behavior. Several intelligent sampling strategies are combined with machine learning multi-class classification models. These techniques are applied to a recently developed exchange-driven magnetic logic scheme that utilizes direct exchange coupling as the main driver.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors”. Sels D, Sorée B, Groeseneken G, 14th International Workshop on Computational Electronics, 85 (2010)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
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“Ab initio computation of the mean inner Coulomb potential of technological important semiconductors”. Schowalter M, Rosenauer A, Lamoen D, Kruse P, Gerthsen D, 1007, 233 (2005)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
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“Enhancement of critical magnetic field in superconducting nanostructures”. Fomin VM, Devreese JT, Misko VR, 1, 134 (2002)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
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“Equations of state of tantalum and plutonium in a spherical cell approximation and at extremely high pressures”. Leys FE, March NH, Lamoen D, van Doren VE, 22, 217 (2002). http://doi.org/10.1080/08957950290011482
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
DOI: 10.1080/08957950290011482
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“First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs”. Rosenauer A, Schowalter M, Glas F, Lamoen D, 107, 151 (2005)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
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“Phase boundaries of superconducting mesoscopic square loops”. Fomin VM, Misko VR, Devreese JT, Moshchalkov VV, 249/251, 476 (1998)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
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