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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
2001 |
Materials science in semiconductor processing |
4 |
|
UA library record; WoS full record |
|
|
|
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures |
2001 |
Materials science in semiconductor processing |
4 |
6 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. |
Quantitative EFTEM study of germanium quantum dots |
2001 |
|
|
|
UA library record; WoS full record; |
|
|
|
Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. |
Stress analysis with convergent beam electron diffraction around NMOS transistors |
2001 |
|
|
|
UA library record; WoS full record; |
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