| Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
| Cornil, D.; Li, H.; Wood, C.; Pourtois, G.; Bredas, J.-L.; Cornil, J. |
Work-function modification of Au and Ag surfaces upon deposition of self-assembled monolayers : influence of the choice of the theoretical approach and the thiol decomposition scheme |
2013 |
ChemPhysChem : a European journal of chemical physics and physical chemistry |
14 |
9 |
UA library record; WoS full record; WoS citing articles |
| Phung, Q.M.; Vancoillie, S.; Pourtois, G.; Swerts, J.; Pierloot, K.; Delabie, A. |
Atomic layer deposition of ruthenium on a titanium nitride surface : a density functional theory study |
2013 |
The journal of physical chemistry: C : nanomaterials and interfaces |
117 |
6 |
UA library record; WoS full record; WoS citing articles |
| Quan Manh, P.; Pourtois, G.; Swerts, J.; Pierloot, K.; Delabie, A. |
Atomic layer deposition of Ruthenium on Ruthenium surfaces : a theoretical study |
2015 |
The journal of physical chemistry: C : nanomaterials and interfaces |
119 |
10 |
UA library record; WoS full record; WoS citing articles |
| Khalilov, U.; Neyts, E.C.; Pourtois, G.; van Duin, A.C.T. |
Can we control the thickness of ultrathin silica layers by hyperthermal silicon oxidation at room temperature? |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
36 |
UA library record; WoS full record; WoS citing articles |
| Khalilov, U.; Pourtois, G.; van Duin, A.C.T.; Neyts, E.C. |
Hyperthermal oxidation of Si(100)2x1 surfaces : effect of growth temperature |
2012 |
The journal of physical chemistry: C : nanomaterials and interfaces |
116 |
32 |
UA library record; WoS full record; WoS citing articles |
| Neyts, E.C.; Khalilov, U.; Pourtois, G.; van Duin, A.C.T. |
Hyperthermal oxygen interacting with silicon surfaces : adsorption, implantation, and damage creation |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
28 |
UA library record; WoS full record; WoS citing articles |
| Delabie, A.; Sioncke, S.; Rip, J.; van Elshocht, S.; Caymax, M.; Pourtois, G.; Pierloot, K. |
Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
9 |
UA library record; WoS full record; WoS citing articles |
| Khalilov, U.; Pourtois, G.; Huygh, S.; van Duin, A.C.T.; Neyts, E.C.; Bogaerts, A. |
New mechanism for oxidation of native silicon oxide |
2013 |
The journal of physical chemistry: C : nanomaterials and interfaces |
117 |
24 |
UA library record; WoS full record; WoS citing articles |
| Khalilov, U.; Pourtois, G.; van Duin, A.C.T.; Neyts, E.C. |
On the c-Si\mid a-SiO2 interface in hyperthermal Si oxidation at room temperature |
2012 |
The journal of physical chemistry: C : nanomaterials and interfaces |
116 |
27 |
UA library record; WoS full record; WoS citing articles |
| Khalilov, U.; Pourtois, G.; van Duin, A.C.T.; Neyts, E.C. |
Self-limiting oxidation in small-diameter Si nanowires |
2012 |
Chemistry of materials |
24 |
45 |
UA library record; WoS full record; WoS citing articles |
| Nourbakhsh, A.; Cantoro, M.; Klekachev, A.V.; Pourtois, G.; Vosch, T.; Hofkens, J.; van der Veen, M.H.; Heyns, M.M.; de Gendt, S.; Sels, B.F. |
Single layer vs bilayer graphene : a comparative study of the effects of oxygen plasma treatment on their electronic and optical properties |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
46 |
UA library record; WoS full record; WoS citing articles |
| Sorée, B.; Magnus, W.; Pourtois, G. |
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode |
2008 |
Journal of computational electronics |
7 |
70 |
UA library record; WoS full record; WoS citing articles |
| Clima, S.; Belmonte, A.; Degraeve, R.; Fantini, A.; Goux, L.; Govoreanu, B.; Jurczak, M.; Ota, K.; Redolfi, A.; Kar, G.S.; Pourtois, G. |
Kinetic and thermodynamic heterogeneity : an intrinsic source of variability in Cu-based RRAM memories |
2017 |
Journal of computational electronics |
16 |
2 |
UA library record; WoS full record; WoS citing articles |
| Goux, L.; Fantini, A.; Govoreanu, B.; Kar, G.; Clima, S.; Chen, Y.-Y.; Degraeve, R.; Wouters, D.J.; Pourtois, G.; Jurczak, M. |
Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems |
2012 |
ECS solid state letters |
1 |
11 |
UA library record; WoS full record; WoS citing articles |
| Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; |
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates |
2013 |
ECS solid state letters |
2 |
12 |
UA library record; WoS full record; WoS citing articles |
| Sankaran, K.; Clima, S.; Mees, M.; Pourtois, G. |
Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations |
2015 |
ECS journal of solid state science and technology |
4 |
19 |
UA library record; WoS full record; WoS citing articles |
| Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures |
2018 |
ECS journal of solid state science and technology |
7 |
5 |
UA library record; WoS full record; WoS citing articles |
| Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M. |
Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2018 |
ECS journal of solid state science and technology |
7 |
2 |
UA library record; WoS full record; WoS citing articles |
| Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W. |
On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications |
2018 |
ECS journal of solid state science and technology |
7 |
4 |
UA library record; WoS full record; WoS citing articles |
| Houssa, M.; van den Broek, B.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Theoretical study of silicene and germanene |
2013 |
Graphene, Ge/iii-v, And Emerging Materials For Post Cmos Applications 5 |
|
6 |
UA library record; WoS full record; WoS citing articles |
| Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures |
2017 |
Semiconductor Process Integration 10 |
|
|
UA library record; WoS full record |
| Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. |
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2017 |
Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar |
|
1 |
UA library record; WoS full record; WoS citing articles |
| Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. |
Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current |
2011 |
Solid state electronics |
65-66 |
2 |
UA library record; WoS full record; WoS citing articles |
| Neyts, E.; Maeyens, A.; Pourtois, G.; Bogaerts, A. |
A density-functional theory simulation of the formation of Ni-doped fullerenes by ion implantation |
2011 |
Carbon |
49 |
13 |
UA library record; WoS full record; WoS citing articles |
| Pham, A.-T.; Sorée, B.; Magnus, W.; Jungemann, C.; Meinerzhagen, B.; Pourtois, G. |
Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations |
2012 |
Solid state electronics |
71 |
2 |
UA library record; WoS full record; WoS citing articles |
| Houssa, M.; Scalise, E.; Sankaran, K.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Electronic properties of hydrogenated silicene and germanene |
2011 |
Applied physics letters |
98 |
63 |
UA library record; WoS full record; WoS citing articles |
| Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Electronic properties of two-dimensional hexagonal germanium |
2010 |
Applied physics letters |
96 |
86 |
UA library record; WoS full record; WoS citing articles |
| Sankaran, K.; Pourtois, G.; Degraeve, R.; Zahid, M.B.; Rignanese, G.-M.; Van Houdt, J. |
First-principles modeling of intrinsic and extrinsic defects in \gamma-Al2O3 |
2010 |
Applied physics letters |
97 |
12 |
UA library record; WoS full record; WoS citing articles |
| Clima, S.; Chen, Y.Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G. |
First-principles simulation of oxygen diffusion in HfOx : role in the resistive switching mechanism |
2012 |
Applied physics letters |
100 |
63 |
UA library record; WoS full record; WoS citing articles |
| Clima, S.; Wouters, D.J.; Adelmann, C.; Schenk, T.; Schroeder, U.; Jurczak, M.; Pourtois, G. |
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2 : a first principles insight |
2014 |
Applied physics letters |
104 |
79 |
UA library record; WoS full record; WoS citing articles |
