Abstract: A structural research of semiconductor compounds for photovoltaic applications CuInSe(2), CuInTe(2) and CuInSeTe, has been done by x-ray diffraction using the Rietveld analysis of experimental diagrams. Besides, in the CuInSeTe compound the electron diffraction and high resolution microscopy techniques have been used. All the studied compounds were polycrystals with chalcopyrite tetragonal structure, I. 42d. A model for the atomic occupancy in each compound has been proposed, and the results have been compared analyzing the Se-Te substitution effect.

Abstract: The structure and defect structure of Bi2-xPbxSr3.5Cu2 (CO3)O8-delta compounds with 0 less-than-or-equal-to x less-than-or-equal-to 0.75 are carefully investigated by electron diffraction and high-resolution electron microscopy. All compounds have an orthorhombic structure with a almost-equal-to b almost-equal-to 5.4 angstrom and c almost-equal-to 39.5 angstrom. The length of the b-axis decreases monotonically with increasing x. The space group for the basic structure is Abm2. The structure can be considered as an intergrowth of Bi2Sr2CuO6 lamellae with Sr2CuO2 (CO3) lamellae along the c-axis. CO3 groups behave as bridges connecting the CuO6 octahedra. In the x = 0 compound the carbon atoms are shifted away from their symmetry positions; the orientational ordering of the CO3 groups (or the carbon shift) in successive CO planes alternates along +b and -b. Typical Bi-type and Pb-type modulations are found along the b-axis up to a Pb content x = 0.5. Electron beam irradiation destroys the ordering of the CO3 groups and alters the modulated structure. (C) 1994 Academic press, inc.

Abstract: ErSi2-x films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples and observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained.

Abstract: Samples of transparent glass-ceramics in the ternary system Li2O-Al2O3-SiO2 (LAS), with Er2O3 as a luminescent dopant, are investigated. The initial glass is obtained by the classical melting technique. In order to induce ceramization of the glass, TiO2 and ZrO2 are added in small amount as nucleating agents. The thermal treatments at 730 and 770 degrees C are carried out to promote formation of titanium zirconate solid solution precipitates. The spatial distribution of the precipitates in the material, their morphology, and their composition are investigated with TEM, HRTEM, HAADF-STEM, EELS and EFTEM. The results demonstrate that with the glass-melting preparation technique it is possible to achieve small nanoparticles with uniform distribution and higher number density than with the sol-gel glass preparation.

Abstract: A transmission electron microscopy study of epitaxial C-60 and C-70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C-60 and C-70 crystals, are studied. Small misalignments of the overlayers with respect to the orientation of the substrate, so-called epitaxial rotations, exist mainly in C-70 films, but also sporadically in the C-60 overlayers. A simple symmetry model, previously used to predict the rotation of hexagonal overlayers on hexagonal substrates, is numerically tested and applied to the present situation. Some qualitative conclusions concerning the substrate-film interaction are deduced. (C) 1996 American Institute of Physics.