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Author Liu, J.; Hu, Z.-Y.; Peng, Y.; Huang, H.-W.; Li, Y.; Wu, M.; Ke, X.-X.; Van Tendeloo, G.; Su, B.-L.
Title 2D ZnO mesoporous single-crystal nanosheets with exposed {0001} polar facets for the depollution of cationic dye molecules by highly selective adsorption and photocatalytic decomposition Type A1 Journal article
Year 2016 Publication Applied catalysis : B : environmental Abbreviated Journal Appl Catal B-Environ
Volume 181 Issue 181 Pages 138-145
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Two dimensional (2D) ZnO nanosheets are ideal system for dimensionally confined transport phenomenon investigation owing to specific surface atomic configuration. Therefore, 2D ZnO porous nanosheets with single-crystal nature and {0001} polar facets, likely display some specific physicochemical properties. In this work, for the first time, 2D ZnO mesoporous single-crystal nanosheets (ZnO-MSN) with {0001} polar facets have been designed and prepared via an intriguing colloidal templating approach through controlling the infiltration speed for the suspension of EG-capped ZnO nanoparticles and polymer colloids. The EG-capped ZnO nanoparticles are very helpful for single-crystal nanosheet formation, while the polymer colloids play dual roles on the mesoporosity generation and {0001} polar facets formation within the mesopores. Such special 2D structure not only accelerates the hole-electron separation and the electron transportation owing to the single-crystal nature, but also enhances the selective adsorption of organic molecules owing to the porous structure and the exposed {0001} polar facets with more O-termination (000-1) surfaces: the 2D ZnO-MSN shows highly selective adsorption and significantly higher photodegradation for positively charged rhodamine B than those for negatively charged methyl orange and neutral phenol, comparing with ZnO nanoparticles (ZnO-NP) and ZnO commercial nanoparticles (ZnO-CNP) with high surface areas. This work may shed some light on better understanding the synthesis of 2D porous single-crystal nanosheet with exposed polar surfaces and photocatalytic mechanism of nanostructured semiconductors in a mixed organic molecules system.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000364256000015 Publication Date 2015-08-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0926-3373; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 9.446 Times cited 60 Open Access
Notes (down) 246791 Countatoms Approved Most recent IF: 9.446
Call Number c:irua:127638 c:irua:127638 c:irua:127638 Serial 10
Permanent link to this record
 
 
Author Li, J.; Ji, M.; Schwarz, T.; Ke, X.; Van Tendeloo, G.; Yuan, J.; Pereira, P.J.; Huang, Y.; Zhang, G.; Feng, H.L.; Yuan, Y.H.; Hatano, T.; Kleiner, R.; Koelle, D.; Chibotaru, L.F.; Yamaura, K.; Wang, H.B.; Wu, P.H.; Takayama-Muromachi, E.; Vanacken, J.; Moshchalkov, V.V.;
Title Local destruction of superconductivity by non-magnetic impurities in mesoscopic iron-based superconductors Type A1 Journal article
Year 2015 Publication Nature communications Abbreviated Journal Nat Commun
Volume 6 Issue 6 Pages 7614
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The determination of the pairing symmetry is one of the most crucial issues for the iron-based superconductors, for which various scenarios are discussed controversially. Non-magnetic impurity substitution is one of the most promising approaches to address the issue, because the pair-breaking mechanism from the non-magnetic impurities should be different for various models. Previous substitution experiments demonstrated that the non-magnetic zinc can suppress the superconductivity of various iron-based superconductors. Here we demonstrate the local destruction of superconductivity by non-magnetic zinc impurities in Ba0.5K0.5Fe2As2 by exploring phase-slip phenomena in a mesoscopic structure with 119 × 102 nm2 cross-section. The impurities suppress superconductivity in a three-dimensional Swiss cheese-like pattern with in-plane and out-of-plane characteristic lengths slightly below ~1.34 nm. This causes the superconducting order parameter to vary along abundant narrow channels with effective cross-section of a few square nanometres. The local destruction of superconductivity can be related to Cooper pair breaking by non-magnetic impurities.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000358857000007 Publication Date 2015-07-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2041-1723; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 12.124 Times cited 12 Open Access
Notes (down) 246791 Countatoms Approved Most recent IF: 12.124; 2015 IF: 11.470
Call Number c:irua:126677 Serial 1827
Permanent link to this record
 
 
Author Chen, J.-J.; Ke, X.; Van Tendeloo, G.; Meng, J.; Zhou, Y.-B.; Liao, Z.-M.; Yu, D.-P.
Title Magnetotransport across the metal-graphene hybrid interface and its modulation by gate voltage Type A1 Journal article
Year 2015 Publication Nanoscale Abbreviated Journal Nanoscale
Volume 7 Issue 7 Pages 5516-5524
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The graphene-metal contact is very important for optimizing the performance of graphene based electronic devices. However, it is difficult to probe the properties of the graphene/metal interface directly via transport measurements in traditional graphene lateral devices, because the dominated transport channel is graphene, not the interface. Here, we employ the Au/graphene/Au vertical and lateral hybrid structure to unveil the metal-graphene interface properties, where the transport is dominated by the charge carriers across the interface. The magnetoresistance (MR) of Au/monolayer graphene/Au and Au/stacked two-layered graphene/Au devices is measured and modulated by gate voltage, demonstrating that the interface is a device. The gate-tunable MR is identified from the graphene lying on the SiO2 substrate and underneath the top metal electrode. Our unique structures couple the in-plane and out-of-plane transport and display linear MR with small amplitude oscillations at low temperatures. Under a magnetic field, the electronic coupling between the graphene edge states and the electrode leads to the appearance of quantum oscillations. Our results not only provide a new pathway to explore the intrinsic transport mechanism at the graphene/metal interface but also open up new vistas of magnetoelectronics.
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge Editor
Language Wos 000351372400050 Publication Date 2015-02-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2040-3364;2040-3372; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 7.367 Times cited 3 Open Access
Notes (down) 246791 Countatoms Approved Most recent IF: 7.367; 2015 IF: 7.394
Call Number c:irua:125533 Serial 1931
Permanent link to this record
 
 
Author Chen, J.J.; Wang, Q.; Meng, J.; Ke, X.; Van Tendeloo, G.; Bie, Y.Q.; Liu, J.; Liu, K.; Liao, Z.M.; Sun, D.; Yu, D.;
Title Photovoltaic effect and evidence of carrier multiplication in graphene vertical homojunctions with asymmetrical metal contacts Type A1 Journal article
Year 2015 Publication ACS nano Abbreviated Journal Acs Nano
Volume 9 Issue 9 Pages 8851-8858
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Graphene exhibits exciting potentials for high-speed wideband photodetection and high quantum efficiency solar energy harvest because of its broad spectral absorption, fast photoelectric response, and potential carrier multiplication. Although photocurrent can be generated near a metalgraphene interface in lateral devices, the photoactive area is usually limited to a tiny one-dimensional line-like interface region. Here, we report photoelectric devices based on vertical graphene two-dimensional homojunction, which is fabricated via vertically stacking four graphene monolayers with asymmetric metal contacts. The devices show excellent photovoltaic output with excitation wavelength ranging from visible light to mid-infrared. The wavelength dependence of the internal quantum efficiency gives direct evidence of the carrier multiplication effect in graphene. The simple fabrication process, easy scale-up, large photoresponsive active area, and broadband response of the vertical graphene device are very promising for practical applications in optoelectronics and photovoltaics.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000361935800023 Publication Date 2015-08-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1936-0851;1936-086X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 13.942 Times cited 11 Open Access
Notes (down) 246791 Countatoms Approved Most recent IF: 13.942; 2015 IF: 12.881
Call Number c:irua:127689 Serial 2615
Permanent link to this record
 
 
Author Ke, X.; Bittencourt, C.; Van Tendeloo, G.
Title Possibilities and limitations of advanced transmission electron microscopy for carbon-based nanomaterials Type A1 Journal article
Year 2015 Publication Beilstein journal of nanotechnology Abbreviated Journal Beilstein J Nanotech
Volume 6 Issue 6 Pages 1541-1557
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract A major revolution for electron microscopy in the past decade is the introduction of aberration correction, which enables one to increase both the spatial resolution and the energy resolution to the optical limit. Aberration correction has contributed significantly to the imaging at low operating voltages. This is crucial for carbon-based nanomaterials which are sensitive to electron irradiation. The research of carbon nanomaterials and nanohybrids, in particular the fundamental understanding of defects and interfaces, can now be carried out in unprecedented detail by aberration-corrected transmission electron microscopy (AC-TEM). This review discusses new possibilities and limits of AC-TEM at low voltage, including the structural imaging at atomic resolution, in three dimensions and spectroscopic investigation of chemistry and bonding. In situ TEM of carbon-based nanomaterials is discussed and illustrated through recent reports with particular emphasis on the underlying physics of interactions between electrons and carbon atoms.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000357977300001 Publication Date 2015-07-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2190-4286; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.127 Times cited 10 Open Access
Notes (down) 246791 Countatoms Approved Most recent IF: 3.127; 2015 IF: 2.670
Call Number c:irua:126857 Serial 2682
Permanent link to this record
 
 
Author Jungbauer, M.; Huehn, S.; Egoavil, R.; Tan, H.; Verbeeck, J.; Van Tendeloo, G.; Moshnyaga, V.
Title Atomic layer epitaxy of Ruddlesden-Popper SrO(SrTiO3)n films by means of metalorganic aerosol deposition Type A1 Journal article
Year 2014 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 105 Issue 25 Pages 251603
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We report an atomic layer epitaxial growth of Ruddlesden-Popper (RP) thin films of SrO(SrTiO3)(n) (n = infinity, 2, 3, 4) by means of metalorganic aerosol deposition (MAD). The films are grown on SrTiO3(001) substrates by means of a sequential deposition of Sr-O/Ti-O-2 atomic monolayers, monitored in-situ by optical ellipsometry. X-ray diffraction and transmission electron microscopy (TEM) reveal the RP structure with n = 2-4 in accordance with the growth recipe. RP defects, observed by TEM in a good correlation with the in-situ ellipsometry, mainly result from the excess of SrO. Being maximal at the film/substrate interface, the SrO excess rapidly decreases and saturates after 5-6 repetitions of the SrO(SrTiO3)(4) block at the level of 2.4%. This identifies the SrTiO3 substrate surface as a source of RP defects under oxidizing conditions within MAD. Advantages and limitations of MAD as a solution-based and vacuum-free chemical deposition route were discussed in comparison with molecular beam epitaxy. (C) 2014 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000346914000007 Publication Date 2014-12-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951;1077-3118; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 32 Open Access
Notes (down) 246102 IFOX; 278510 VORTEX; 246791 COUNTATOMS; Hercules; 312483 ESTEEM2; esteem2jra3 ECASJO; Approved Most recent IF: 3.411; 2014 IF: 3.302
Call Number UA @ lucian @ c:irua:122830UA @ admin @ c:irua:122830 Serial 172
Permanent link to this record
 
 
Author Egoavil, R.; Gauquelin, N.; Martinez, G.T.; Van Aert, S.; Van Tendeloo, G.; Verbeeck, J.
Title Atomic resolution mapping of phonon excitations in STEM-EELS experiments Type A1 Journal article
Year 2014 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 147 Issue Pages 1-7
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Atomically resolved electron energy-loss spectroscopy experiments are commonplace in modern aberration-corrected transmission electron microscopes. Energy resolution has also been increasing steadily with the continuous improvement of electron monochromators. Electronic excitations however are known to be delocalized due to the long range interaction of the charged accelerated electrons with the electrons in a sample. This has made several scientists question the value of combined high spatial and energy resolution for mapping interband transitions and possibly phonon excitation in crystals. In this paper we demonstrate experimentally that atomic resolution information is indeed available at very low energy losses around 100 meV expressed as a modulation of the broadening of the zero loss peak. Careful data analysis allows us to get a glimpse of what are likely phonon excitations with both an energy loss and gain part. These experiments confirm recent theoretical predictions on the strong localization of phonon excitations as opposed to electronic excitations and show that a combination of atomic resolution and recent developments in increased energy resolution will offer great benefit for mapping phonon modes in real space.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000343157400001 Publication Date 2014-05-29
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 22 Open Access
Notes (down) 246102 IFOX; 278510 VORTEX; 246791 COUNTATOMS; Hercules; 312483 ESTEEM2; esteem2jra3 ECASJO; Approved Most recent IF: 2.843; 2014 IF: 2.436
Call Number UA @ lucian @ c:irua:118332UA @ admin @ c:irua:118332 Serial 177
Permanent link to this record
 
 
Author Chen, Y.Z.; Trier, F.; Wijnands, T.; Green, R.J.; Gauquelin, N.; Egoavil, R.; Christensen, D.V.; Koster, G.; Huijben, M.; Bovet, N.; Macke, S.; He, F.; Sutarto, R.; Andersen, N.H.; Sulpizio, J.A.; Honig, M.; Prawiroatmodjo, G.E.D.K.; Jespersen, T.S.; Linderoth, S.; Ilani, S.; Verbeeck, J.; Van Tendeloo, G.; Rijnders, G.; Sawatzky, G.A.; Pryds, N.
Title Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping Type A1 Journal article
Year 2015 Publication Nature materials Abbreviated Journal Nat Mater
Volume 14 Issue 14 Pages 801-806
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable metalinsulator transitions and phase separation. Increasing the mobility of the 2DEG, however, remains a major challenge. Here, we show that the electron mobility is enhanced by more than two orders of magnitude by inserting a single-unit-cell insulating layer of polar La1−xSrxMnO3 (x = 0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 produced at room temperature. Resonant X-ray spectroscopy and transmission electron microscopy show that the manganite layer undergoes unambiguous electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits Shubnikovde Haas oscillations and fingerprints of the quantum Hall effect, demonstrating unprecedented high mobility and low electron density.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000358530100022 Publication Date 2015-06-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1476-1122;1476-4660; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 39.737 Times cited 170 Open Access
Notes (down) 246102 IFOX; 246791 COUNTATOMS; 278510 VORTEX; Hercules; 312483 ESTEEM2; FWO G004413N; esteem2jra3 ECASJO; Approved Most recent IF: 39.737; 2015 IF: 36.503
Call Number c:irua:127184 c:irua:127184UA @ admin @ c:irua:127184 Serial 1163
Permanent link to this record
 
 
Author Dendooven, J.; Devloo-Casier, K.; Ide, M.; Grandfield; Kurttepeli; Ludwig, K.F.; Bals, S.; Van der Voort, P.; Detavernier, C.
Title Atomic layer deposition-based tuning of the pore size in mesoporous thin films studied by in situ grazing incidence small angle X-ray scattering Type A1 Journal article
Year 2014 Publication Nanoscale Abbreviated Journal Nanoscale
Volume 6 Issue 24 Pages 14991-14998
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Atomic layer deposition (ALD) enables the conformal coating of porous materials, making the technique suitable for pore size tuning at the atomic level, e.g., for applications in catalysis, gas separation and sensing. It is, however, not straightforward to obtain information about the conformality of ALD coatings deposited in pores with diameters in the low mesoporous regime (<10 nm). In this work, it is demonstrated that in situ synchrotron based grazing incidence small angle X-ray scattering (GISAXS) can provide valuable information on the change in density and internal surface area during ALD of TiO2 in a porous titania film with small mesopores (3-8 nm). The results are shown to be in good agreement with in situ X-ray fluorescence data representing the evolution of the amount of Ti atoms deposited in the porous film. Analysis of both datasets indicates that the minimum pore diameter that can be achieved by ALD is determined by the size of the Ti-precursor molecule.
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge Editor
Language Wos 000345458200051 Publication Date 2014-10-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2040-3364;2040-3372; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 7.367 Times cited 41 Open Access OpenAccess
Notes (down) 239865 Cocoon; 335078 Colouratom; Fwo; ECAS_Sara; (ROMEO:yellow; preprint:; postprint:restricted ; pdfversion:cannot); Approved Most recent IF: 7.367; 2014 IF: 7.394
Call Number UA @ lucian @ c:irua:122227 Serial 169
Permanent link to this record
 
 
Author Schattschneider, P.; Ennen, I.; Stoger-Pollach, M.; Verbeeck, J.; Mauchamp, V.; Jaouen, M.
Title Real space maps of magnetic moments on the atomic scale: theory and feasibility Type A1 Journal article
Year 2010 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 110 Issue 8 Pages 1038-1041
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The recently discovered EMCD technique (energy loss magnetic chiral dichroism) can detect atom specific magnetic moments with nanometer resolution, exploiting the spin selectivity of electronic transitions in energy loss spectroscopy. Yet, direct imaging of magnetic moments on the atomic scale is not possible. In this paper we present an extension of EMCD that can overcome this limit. As a model system we chose bcc Fe. We present image simulations of the L3 white line signal, based on the kinetic equation for the density matrix of the 200 kV probe electron. With actual progress in instrumentation (high brightness sources, aberration corrected lenses) this technique should allow direct imaging of spin moments on the atomic scale.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000281216600016 Publication Date 2009-12-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 10 Open Access
Notes (down) --- Approved Most recent IF: 2.843; 2010 IF: 2.063
Call Number UA @ lucian @ c:irua:84439UA @ admin @ c:irua:84439 Serial 2830
Permanent link to this record
 
 
Author Meyer, H.W.; Bismayer, U.; Adiwidjaja, G.; Zhang, M.; Nistor, L.; Van Tendeloo, G.
Title Natural titanite and malayite: structural investigations and the 500K anomaly Type A1 Journal article
Year 1998 Publication Phase transitions Abbreviated Journal Phase Transit
Volume 67 Issue Pages 27-49
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York Editor
Language Wos 000079806000003 Publication Date 2007-07-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0141-1594;1029-0338; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.06 Times cited 9 Open Access
Notes (down) ) Approved Most recent IF: 1.06; 1998 IF: 0.551
Call Number UA @ lucian @ c:irua:25683 Serial 2287
Permanent link to this record
 
 
Author Ji, Z.; Wang, H.; Canossa, S.; Wuttke, S.; Yaghi, O.M.
Title Pore Chemistry of Metal–Organic Frameworks Type A1 Journal article
Year 2020 Publication Advanced Functional Materials Abbreviated Journal Adv Funct Mater
Volume 30 Issue 41 Pages 2000238
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The pores in metal–organic frameworks (MOFs) can be functionalized by placing chemical entities along the backbone and within the backbone. This chemistry is enabled by the architectural, thermal, and chemical robustness of the frameworks and the ability to characterize them by many diffraction and spectroscopic techniques. The pore chemistry of MOFs is articulated in terms of site isolation, coupling, and cooperation and relate that to their functions in guest recognition, catalysis, ion and electron transport, energy transfer, pore‐dynamic modulation, and interface construction. It is envisioned that the ultimate control of pore chemistry requires arranging functionalities into defined sequences and developing techniques for reading and writing such sequences within the pores.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000532830900001 Publication Date 2020-05-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1616-301X ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 19 Times cited Open Access OpenAccess
Notes (down) (Not present) Approved Most recent IF: 19; 2020 IF: 12.124
Call Number EMAT @ emat @c:irua:169485 Serial 6422
Permanent link to this record
 
 
Author Bals, S.; Goris, B.; Altantzis, T.; Heidari, H.; Van Aert, S.; Van Tendeloo, G.
Title Seeing and measuring in 3D with electrons Type A1 Journal article
Year 2014 Publication Comptes rendus : physique Abbreviated Journal Cr Phys
Volume 15 Issue 2-3 Pages 140-150
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Modern TEM enables the investigation of nanostructures at the atomic scale. However, TEM images are only two-dimensional (2D) projections of a three-dimensional (3D) object. Electron tomography can overcome this limitation. The technique is increasingly focused towards quantitative measurements and reaching atomic resolution in 3D has been the ultimate goal for many years. Therefore, one needs to optimize the acquisition of the data, the 3D reconstruction techniques as well as the quantification methods. Here, we will review a broad range of methodologies and examples. Finally, we will provide an outlook and will describe future challenges in the field of electron tomography.
Address
Corporate Author Thesis
Publisher Place of Publication Paris Editor
Language Wos 000334013600005 Publication Date 2014-01-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1631-0705; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.048 Times cited 15 Open Access OpenAccess
Notes (down) (FWO;Belgium); European Research Council under the 7th Framework Program (FP7); ERC grant No.246791 – COUNTATOMS; ERC grant No.335078 – COLOURATOMS; ECAS_Sara; (ROMEO:green; preprint:; postprint:can ; pdfversion:cannot); Approved Most recent IF: 2.048; 2014 IF: 2.035
Call Number UA @ lucian @ c:irua:113855 Serial 2960
Permanent link to this record
 
 
Author Espinoza Torres, C.; Condó, A.M.; Haberkorn, N.; Zelaya, E.; Schryvers, D.; Guimpel, J.; Lovey, F.C.
Title Structures in textured Cu-Al-Ni shape memory thin films grown by sputtering Type A1 Journal article
Year 2014 Publication Materials characterization Abbreviated Journal Mater Charact
Volume 96 Issue Pages 256-262
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The structure and texture formation in CuAlNi thin films of different thicknesses (1 μm to 5 μm) grown by DC magnetron sputtering without any intentional heating of the substrate are reported. The as-grown films present grains with an average size of 20 nm. The films with thickness of 1 μm have a single metastable phase with a hexagonal structure and are textured with planes (0002) parallel to the plane of the films. It was observed that thicker films present phase coexistence between metastable hexagonal and body centered cubic structures with a gradual increment of the body centered cubic phase fraction. The films with thickness of 5 μm are textured with planes (0002) and View the MathML source101¯0 in the hexagonal structure, whereas in the body centered cubic structure the films are textured with {110} planes parallel to the plane of the films. This fact can be associated with self-heating of the substrate during the growth of the films and with the relative stability of the metastable phases. Free standing films annealed in a second step (1123 K for 1 h) present austenitic phase with L21 structure and sub-micrometric grains textured with {220}L21 planes parallel to the plane of the films. The martensitic transformation temperature was determined from the analysis of resistance against temperature measurements.
Address
Corporate Author Thesis
Publisher Place of Publication New York Editor
Language Wos 000343346400032 Publication Date 2014-08-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1044-5803; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.714 Times cited 9 Open Access
Notes (down) (CONICET PIP 11220090100457) and MINCYT-FWO International Exchange Project FW/09/03 is also acknowledged Approved Most recent IF: 2.714; 2014 IF: 1.845
Call Number UA @ lucian @ c:irua:118931 Serial 3321
Permanent link to this record
 
 
Author Vávra, O.; Gaži, S.; Golubović, D.S.; Vávra, I.; Dérer, J.; Verbeeck, J.; Van Tendeloo, G.; Moshchalkov, V.V.
Title 0 and π phase Josephson coupling through an insulating barrier with magnetic impurities Type A1 Journal article
Year 2006 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 74 Issue 2 Pages 020502
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We have studied the temperature and field dependencies of the critical current I(C) in the Nb-Fe(0.1)Si(0.9)-Nb Josephson junction with a tunneling barrier formed by a paramagnetic insulator. We demonstrate that in these junctions coexistence of both the 0 and the pi states within one tunnel junction occurs, and leads to the appearance of a sharp cusp in the temperature dependence I(C)(T), similar to the I(C)(T) cusp found for the 0-pi transition in metallic pi junctions. This cusp is not related to the 0-pi temperature-induced transition itself, but is caused by the different temperature dependencies of the opposing 0 and pi supercurrents through the barrier.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000239426600010 Publication Date 2006-07-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 27 Open Access
Notes (down) Approved Most recent IF: 3.836; 2006 IF: 3.107
Call Number UA @ lucian @ c:irua:60087 c:irua:60087 c:irua:60087 c:irua:60087UA @ admin @ c:irua:60087 Serial 1
Permanent link to this record
 
 
Author Tan, H.; Turner, S.; Yucelen, E.; Verbeeck, J.; Van Tendeloo, G.
Title 2D atomic mapping of oxidation states in transition metal oxides by scanning transmission electron microscopy and electron energy-loss spectroscopy : reply Type Editorial
Year 2012 Publication Physical review letters Abbreviated Journal Phys Rev Lett
Volume 108 Issue 25 Pages 259702
Keywords Editorial; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000305568700038 Publication Date 2012-06-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-9007 ISBN Additional Links UA library record; WoS full record
Impact Factor 8.462 Times cited Open Access
Notes (down) Approved Most recent IF: 8.462; 2012 IF: 7.943
Call Number UA @ admin @ c:irua:100293 Serial 5370
Permanent link to this record
 
 
Author Bertoni, G.; Verbeeck, J.
Title Accuracy and precision in model based EELS quantification Type A1 Journal article
Year 2008 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 108 Issue 8 Pages 782-790
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We present results on model based quantification of electron energy loss spectra (EELS), focusing on the factors that influence accuracy and precision in determining chemical concentrations. Several sources of systematical errors are investigated. The spectrometer entrance aperture determines the collection angle, and the effects of its position with respect to the transmitted beam are investigated, taking into account the diffraction by the crystal structure. The effect of the orientation of the sample is tested experimentally and theoretically on SrTiO3, and finally, a simulated experiment on c-BN at different thicknesses confirms the superior results of the model based method with respect to the conventional method. A test on a set of experimental reference compounds is presented, showing that remarkably good accuracy can be obtained. Recommendations are given to achieve high accuracy and precision in practice. (C) 2008 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000258241900010 Publication Date 2008-02-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 44 Open Access
Notes (down) Approved Most recent IF: 2.843; 2008 IF: 2.629
Call Number UA @ lucian @ c:irua:70550UA @ admin @ c:irua:70550 Serial 42
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Author van den Broek, W.; Verbeeck, J.; de Backer, S.; Scheunders, P.; Schryvers, D.
Title Acquisition of the EELS data cube by tomographic reconstruction Type A1 Journal article
Year 2006 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 106 Issue 4/5 Pages 269-276
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract Energy filtered TEM, EFTEM, provides three-dimensional data, two spatial and one spectral dimension. We propose to acquire these data by measuring a series of images with a defocused energy filter. It will be shown that each image is a projection of the data on the detector and that reconstruction of the data out of a sufficient number of such projections using a tomographic reconstruction algorithm is possible. This technique uses only a fraction of the electron dose an energy filtered series (EFS) needs for the same spectral and spatial resolution and the same mean signal-to-noise ratio. (c) 2005 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000236042300003 Publication Date 2005-11-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 6 Open Access
Notes (down) Approved Most recent IF: 2.843; 2006 IF: 1.706
Call Number UA @ lucian @ c:irua:56910UA @ admin @ c:irua:56910 Serial 55
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Author Bals, S.; Kabius, B.; Haider, M.; Radmilovic, V.; Kisielowski, C.
Title Annular dark field imaging in a TEM Type A1 Journal article
Year 2004 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 130 Issue 10 Pages 675-680
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Annular objective apertures are fabricated for a CM300 transmission electron microscope using a focused ion beam system. A central beam stop in the back focal plane of the objective lens of the microscope blocks all electrons scattered up to a semi-angle of approximately 20 mrad. In this manner, contributions to the image from Bragg scattering are largely reduced and the image contrast is sensitive to the atomic number Z. Experimentally, we find that single atom scattering cross sections measured with this technique are close to Rutherford scattering values. A comparison between this new method and STEM-HAADF shows that both techniques result in qualitatively similar images although the resolution of ADF-TEM is limited by contrast delocalization caused by the spherical aberration of the objective lens. This problem can be overcome by using an aberration corrected microscope.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000221489300007 Publication Date 2004-04-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 43 Open Access
Notes (down) Approved Most recent IF: 1.554; 2004 IF: 1.523
Call Number UA @ lucian @ c:irua:87584 Serial 132
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Author Van Aert, S.
Title Atomen in 3D : Antwerpenaren brengen atomaire structuur nanodeeltjes in beeld Type Newspaper/Magazine/blog article
Year 2011 Publication Chemie magazine Abbreviated Journal
Volume 7 Issue 3 Pages 9
Keywords Newspaper/Magazine/blog article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0379-7651 ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes (down) Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:94122 Serial 163
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Author Van Aert, S.; Verbeeck, J.; Bals, S.; Erni, R.; van Dyck, D.; Van Tendeloo, G.
Title Atomic resolution mapping using quantitative high-angle annular dark field scanning transmission electron microscopy Type A1 Journal article
Year 2009 Publication Microscopy and microanalysis Abbreviated Journal Microsc Microanal
Volume 15 Issue S:2 Pages 464-465
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge, Mass. Editor
Language Wos 000208119100230 Publication Date 2009-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1431-9276;1435-8115; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.891 Times cited 1 Open Access
Notes (down) Approved Most recent IF: 1.891; 2009 IF: 3.035
Call Number UA @ lucian @ c:irua:96555UA @ admin @ c:irua:96555 Serial 178
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Author Lubyshev, D.; Fastenau, J.M.; Fang, X.-M.; Wu, Y.; Doss, C.; Snyder, A.; Liu, W.K.; Lamb, M.S.M.; Bals, S.; Song, C.
Title Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications Type A1 Journal article
Year 2004 Publication Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena Abbreviated Journal
Volume 22 Issue 3 Pages 1565-1569
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V  s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.
Address
Corporate Author Thesis
Publisher Place of Publication Woodbury, N.Y. Editor
Language Wos 000222481400141 Publication Date 2004-07-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0734-211X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 25 Open Access
Notes (down) Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:87596 Serial 427
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Author Verbeeck, J.; Van Aert, S.; Zhang, L.; Haiyan, T.; Schattschneider, P.; Rosenauer, A.
Title Computational aspects in quantitative EELS Type A1 Journal article
Year 2010 Publication Microscopy and microanalysis Abbreviated Journal Microsc Microanal
Volume 16 Issue S:2 Pages 240-241
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge, Mass. Editor
Language Wos Publication Date 2010-08-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1431-9276;1435-8115; ISBN Additional Links UA library record
Impact Factor 1.891 Times cited Open Access
Notes (down) Approved Most recent IF: 1.891; 2010 IF: 3.259
Call Number UA @ lucian @ c:irua:96556UA @ admin @ c:irua:96556 Serial 454
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Author Abakumov, A.M.; Hadermann, J.; Bals, S.; Nikolaev, I.V.; Antipov, E.V.; Van Tendeloo, G.
Title Crystallographic shear structures as a route to anion-deficient perovskites Type A1 Journal article
Year 2006 Publication Angewandte Chemie: international edition in English Abbreviated Journal Angew Chem Int Edit
Volume 45 Issue 40 Pages 6697-6700
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Weinheim Editor
Language Wos 000241474500022 Publication Date 2006-09-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1433-7851;1521-3773; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 11.994 Times cited 62 Open Access
Notes (down) Approved Most recent IF: 11.994; 2006 IF: 10.232
Call Number UA @ lucian @ c:irua:61689 Serial 589
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Author Blumenau, A.T.; Frauenheim, T.; Öberg, S.; Willems, B.; Van Tendeloo, G.
Title Dislocation structures in diamond: density-functional based modelling and high resolution electron microscopy Type MA1 Book as author
Year 2004 Publication Abbreviated Journal
Volume Issue Pages
Keywords MA1 Book as author; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Trans Tech Publications Place of Publication s.l. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes (down) Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:54872 Serial 732
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Author Peirs, J.; Verleysen, P.; Tirry, W.; Rabet, L.; Schryvers, D.; Degrieck, J.
Title Dynamic shear localization in Ti6Al4V Type P1 Proceeding
Year 2011 Publication Procedia Engineering T2 – 11th International Conference on the Mechanical Behavior of Materials, (ICM), 2011, Como, ITALY (ICM11) Abbreviated Journal
Volume Issue Pages 1-6
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract The alloy Ti6Al4V is known to be prone to the formation of adiabatic shear bands when dynamically loaded in shear. This causes a catastrophic decrease of the load carrying capacity and is usually followed by fracture. Although, the main mechanism is recognized to be the competition between strain hardening and thermal softening, a detailed understanding of the role of microstructural plasticity mechanisms and macroscopic loading conditions does not exist yet. To study strain localization and shear fracture, different high strain rate shear tests have been carried out: compression of hat-shaped specimens, torsion of thin walled tubular specimens and in-plane shear tests. The value of the three techniques in studying shear localization is evaluated. Post-mortem analysis of the fracture surface and the materials' microstructure is performed with optical and electron microscopy. In all cases a ductile fracture is observed. SEM and TEM techniques are used to study the local microstructure and composition in the shear band and as such the driving mechanism for the ASB formation. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of ICM11
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000300451302060 Publication Date 2011-06-20
Series Editor Series Title Abbreviated Series Title
Series Volume 10 Series Issue Edition
ISSN 1877-7058; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 4 Open Access
Notes (down) Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:113069 Serial 767
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Author Bach, D.; Störmer, H.; Schneider, R.; Gerthsen, D.; Verbeeck, J.
Title EELS investigations of different niobium oxide phases Type A1 Journal article
Year 2006 Publication Microscopy and microanalysis Abbreviated Journal Microsc Microanal
Volume 12 Issue 5 Pages 416-423
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Electron energy loss spectra in conjunction with near-edge fine structures of purely stoichiometric niobium monoxide (NbO) and niobium pentoxide (Nb2O5) reference materials were recorded. The structures of the niobium oxide reference materials were checked by selected area electron diffraction to ensure a proper assignment of the fine structures. NbO and Nb2O5 show clearly different energy loss near-edge fine structures of the Nb-M-4,M-5 and -M-2,M-3 edges and of the O-K edge, reflecting the specific local environments of the ionized atoms. To distinguish the two oxides in a quantitative manner, the intensities under the Nb-M-4,M-5 as well as Nb-M-2,M-3 edges and the O-K edge were measured and their ratios calculated. k-factors were also derived from these measurements.
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge, Mass. Editor
Language Wos 000241181400007 Publication Date 2006-09-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1431-9276;1435-8115; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.891 Times cited 50 Open Access
Notes (down) Approved Most recent IF: 1.891; 2006 IF: 2.108
Call Number UA @ lucian @ c:irua:60979UA @ admin @ c:irua:60979 Serial 789
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Author Bach, D.; Schneider, R.; Gerthsen, D.; Verbeeck, J.; Sigle, W.
Title EELS of niobium and stoichiometric niobium-oxide phases: part 1: plasmon and Near-edges fine structure Type A1 Journal article
Year 2009 Publication Microscopy and microanalysis Abbreviated Journal Microsc Microanal
Volume 15 Issue 6 Pages 505-523
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A comprehensive electron energy-loss spectroscopy study of niobium (Nb) and stable Nb-oxide phases (NbO, NbO2, Nb2O5) was carried out. In this work (Part I), the plasmons and energy-loss near-edge structures (ELNES) of all relevant Nb edges (Nb-N2,3, Nb-M4,5, Nb-M2,3, Nb-M1, and Nb-L2,3) up to energy losses of about 2600 eV and the O-K edge are analyzed with respect to achieving characteristic fingerprints of Nb in different formal oxidation states (0 for metallic Nb, +2 for NbO, +4 for NbO2, and +5 for Nb2O5). Chemical shifts of the Nb-N2,3, Nb-M4,5, Nb-M2,3, and Nb-L2,3 edges are extracted from the spectra that amount to about 4 eV as the oxidation state increases from 0 for Nb to +5 for Nb2O5. Four different microscopes, including a 200 keV ZEISS Libra with monochromator, were used. The corresponding wide range of experimental parameters with respect to the primary electron energy, convergence, and collection semi-angles as well as energy resolution allows an assessment of the influence of the experimental setup on the ELNES of the different edges. Finally, the intensity of the Nb-L2,3 white-line edges is correlated with niobium 4d-state occupancy in the different reference materials.
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge, Mass. Editor
Language Wos 000272433200005 Publication Date 2009-10-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1431-9276;1435-8115; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.891 Times cited 55 Open Access
Notes (down) Approved Most recent IF: 1.891; 2009 IF: 3.035
Call Number UA @ lucian @ c:irua:80320UA @ admin @ c:irua:80320 Serial 790
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Author Halley, D.; Majjad, H.; Bowen, M.; Najjari, N.; Henry, Y.; Ulhaq-Bouillet, C.; Weber, W.; Bertoni, G.; Verbeeck, J.; Van Tendeloo, G.
Title Electrical switching in Fe/Cr/MgO/Fe magnetic tunnel junctions Type A1 Journal article
Year 2008 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 92 Issue 21 Pages 212115,1-3
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Hysteretic resistance switching is observed in epitaxial Fe/Cr/MgO/Fe magnetic tunnel junctions under bias voltage cycling between negative and positive values of about 1 V. The junctions switch back and forth between high- and low-resistance states, both of which depend on the device bias history. A linear dependence is found between the magnitude of the tunnel magnetoresistance and the crafted resistance of the junctions. To explain these results, a model is proposed that considers electron transport both by elastic tunneling and by defect-assisted transmission. (c) 2008 American Institute of Physics.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000256303500042 Publication Date 2008-06-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 33 Open Access
Notes (down) Approved Most recent IF: 3.411; 2008 IF: 3.726
Call Number UA @ lucian @ c:irua:69284UA @ admin @ c:irua:69284 Serial 894
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Author Verbeeck, J.; Lebedev, O.I.; Van Tendeloo, G.; Silcox, J.; Mercey, B.; Hervieu, M.; Haghiri-Gosnet, A.M.
Title Electron energy-loss spectroscopy study of a (LaMnO3)8(SrMnO3)4 heterostructure Type A1 Journal article
Year 2001 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 79 Issue 13 Pages 2037-2039
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract An epitaxially grown heterostructure consisting of alternating layers of LaMnO3 (8 unit cells) and SrMnO3 (4 unit cells) on a SrTiO3 substrate has been studied by a combination of electron energy-loss spectroscopy (EELS) and high-resolution transmission electron microscopy (HRTEM) on an atomic scale. Excitation edges of all elements are captured with subnanometer spatial accuracy, and parametrized to obtain chemical profiles. The fine-edge structure of O K and Mn L-2,L-3 edges are interpreted as signatures of the local electronic structure and show a spatial modulation of the concentration of holes with O 2p character. The chemical concentration is found to be different for the bottom and top interface of a SrMnO3 layer. HRTEM complements the EELS results and confirms the asymmetry of the interfaces. (C) 2001 American Institute of Physics.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000171015200036 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 19 Open Access
Notes (down) Approved Most recent IF: 3.411; 2001 IF: 3.849
Call Number UA @ lucian @ c:irua:54799UA @ admin @ c:irua:54799 Serial 933
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