|
“Magnetic properties of vortex states in spherical superconductors”. Xu B, Milošević, MV, Peeters FM, Physical review : B : condensed matter and materials physics 77, 144509 (2008). http://doi.org/10.1103/PhysRevB.77.144509
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 36
DOI: 10.1103/PhysRevB.77.144509
|
|
|
“Magnetically induced splitting of a giant vortex state in a mesoscopic superconducting disk”. Golubović, DS, Milošević, MV, Peeters FM, Moshchalkov VV, Physical review : B : condensed matter and materials physics 71, 180502 (2005). http://doi.org/10.1103/PhysRevB.71.180502
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 42
DOI: 10.1103/PhysRevB.71.180502
|
|
|
“Magneto-excitons in planar type II quantum dots”. Janssens KL, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 64 (2001). http://doi.org/10.1103/PhysRevB.64.155324
Abstract: We study an exciton in a type-II quantum dot, where the electron is confined in the dot, but the hole is located in the barrier material. The exciton properties are studied as a function of a perpendicular magnetic field using a Hartree-Fock mesh calculation. Our model system consists of a planar quantum disk. Angular momentum (l) transitions are predicted with increasing magnetic field. We, also study the transition from a type-I to a type-H quantum dot which is induced by changing the confinement potential of the hole. For sufficiently large magnetic fields a reentrant behavior is found from l(h) = 0 to l(h) not equal 0 and back to l(h) = 0, which results in a transition from type II to type I.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 56
DOI: 10.1103/PhysRevB.64.155324
|
|
|
“Magneto-phonon resonance in the energy relaxation of electrons in a quantum well”. Wu XG, Peeters FM, Physical review : B : condensed matter and materials physics 55, 9333 (1997)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 12
|
|
|
“Magneto-polaron effect on shallow indium donors in CdTe”. Grynberg M, Huant S, Martinez G, Kossut J, Wojtowicz T, Karczewski G, Shi JM, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 54, 1467 (1996). http://doi.org/10.1103/PhysRevB.54.1467
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 33
DOI: 10.1103/PhysRevB.54.1467
|
|
|
“Magnetoconductance of rectangular arrays of quantum rings”. Kálmán O, Földi P, Benedict MG, Peeters FM, Physical review : B : condensed matter and materials physics 78, 125306 (2008). http://doi.org/10.1103/PhysRevB.78.125306
Abstract: Electron transport through multiterminal rectangular arrays of quantum rings is studied in the presence of Rashba-type spin-orbit interaction (SOI) and of a perpendicular magnetic field. Using the analytic expressions for the transmission and reflection coefficients for single rings we obtain the conductance through such arrays as a function of the SOI strength, of the magnetic flux, and of the wave vector k of the incident electron. Due to destructive or constructive spin interferences caused by the SOI, the array can be totally opaque for certain ranges of k, while there are parameter values where it is completely transparent. Spin resolved transmission probabilities show nontrivial spin transformations at the outputs of the arrays. When pointlike random scattering centers are placed between the rings, the Aharonov-Bohm peaks split, and an oscillatory behavior of the conductance emerges as a function of the SOI strength.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 31
DOI: 10.1103/PhysRevB.78.125306
|
|
|
“Magnetoconductance through a chain of rings with or without periodically modulated spin-orbit interaction strength and magnetic field”. Molnár B, Vasilopoulos P, Peeters FM, Physical review : B : condensed matter and materials physics 72, 075330 (2005). http://doi.org/10.1103/PhysRevB.72.075330
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 52
DOI: 10.1103/PhysRevB.72.075330
|
|
|
“Magnetoexciton in vertically coupled InP/GaInP quantum disks: effect of strain on the exciton ground state”. Janssens KL, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 69, 235320 (2004). http://doi.org/10.1103/PhysRevB.69.235320
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.69.235320
|
|
|
“Magnetoexcitons in type-II self-assembled quantum dots and quantum-dot superlattices”. Veljkovic D, Tadić, M, Peeters FM, Recent developments in advanced materials and processes 518, 51 (2006)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
|
|
|
“Magnetoplasma excitations in vertically coupled quantum dot systems”. Partoens B, Matulis A, Peeters FM, Materials science forum 297/298, 225 (1999)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
|
|
|
“Magnetoplasma excitations of two vertically coupled dots”. Partoens B, Matulis A, Peeters FM, Physical review : B : condensed matter and materials physics 57, 13039 (1998). http://doi.org/10.1103/PhysRevB.57.13039
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 15
DOI: 10.1103/PhysRevB.57.13039
|
|
|
“Magnetopolaron effect in parabolic quantum wells in tilted magnetic fields”. Hai GQ, Peeters FM, Physical review : B : condensed matter and materials physics 60, 8984 (1999). http://doi.org/10.1103/PhysRevB.60.8984
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 36
DOI: 10.1103/PhysRevB.60.8984
|
|
|
“Magnetopolaron effect on shallow donor states in GaAs”. Shi JM, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 5202 (1993). http://doi.org/10.1103/PhysRevB.48.5202
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 58
DOI: 10.1103/PhysRevB.48.5202
|
|
|
“Magnetopolaron effect on shallow donors in GaAs”. Cheng J-P, McCombe BD, Shi JM, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 7910 (1993)
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 46
|
|
|
“Magnetopolaron effect on the donor transition energies in ZnSe”. Shi JM, Peeters FM, Devreese JT, Imanaka Y, Miura N, Physical review : B : condensed matter and materials physics 52, 17205 (1995). http://doi.org/10.1103/PhysRevB.52.17205
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 7
DOI: 10.1103/PhysRevB.52.17205
|
|
|
“Magnetoresistance of a two-dimensional electron gas in weakly modulated magnetic fields”. Matulis A, Peeters FM, Physical review : B : condensed matter and materials physics 62, 91 (2000). http://doi.org/10.1103/PhysRevB.62.91
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PhysRevB.62.91
|
|
|
“Magnetotransport in a pseudomorhic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, van Hove M, Borghs G, Physical review : B : condensed matter and materials physics 52, 12218 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 35
|
|
|
“Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si \delta-doping layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, Van Hove M, Borghs G, Physical review : B : condensed matter and materials physics 52, 12218 (1995). http://doi.org/10.1103/PhysRevB.52.12218
Abstract: Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 43
DOI: 10.1103/PhysRevB.52.12218
|
|
|
“Magnetotunneling of holes through single and double barriers using a multiband treatment”. Krstajić, P, Peeters FM, Physical review : B : condensed matter and materials physics 71, 115321 (2005). http://doi.org/10.1103/PhysRevB.71.115321
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 5
DOI: 10.1103/PhysRevB.71.115321
|
|
|
“Martensitic transformations and microstructures in splat-cooled Ni-Al”. Schryvers D, Holland-Moritz D, Materials science and engineering: part A: structural materials: properties, microstructure and processing 273/275, 697 (1999). http://doi.org/10.1016/S0921-5093(99)00399-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 6
DOI: 10.1016/S0921-5093(99)00399-8
|
|
|
“Masking effect of heat dissipation on the current-voltage characteristics of a mesoscopic superconducting sample with leads”. Vodolazov DY, Peeters FM, Morelle M, Moshchalkov VV, Physical review : B : condensed matter and materials physics 71, 184502 (2005). http://doi.org/10.1103/PhysRevB.71.184502
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 43
DOI: 10.1103/PhysRevB.71.184502
|
|
|
“Measurement of the size of embedded metal clusters by mass spectrometry, transmission electron microscopy, and small-angle X-ray scattering”. Hendrich C, Favre L, Ievlev DN, Dobrynin AN, Bras W, Hörmann U, Piscopiello E, Van Tendeloo G, Lievens P, Temst K, Applied physics A : materials science &, processing 86, 533 (2007). http://doi.org/10.1007/s00339-006-3808-5
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.455
Times cited: 11
DOI: 10.1007/s00339-006-3808-5
|
|
|
“Measuring the corrugation amplitude of suspended and supported graphene”. Kirilenko DA, Dideykin AT, Van Tendeloo G, Physical review : B : condensed matter and materials physics 84, 235417 (2011). http://doi.org/10.1103/PhysRevB.84.235417
Abstract: Nanoscale corrugation is a fundamental property of graphene arising from its low-dimensional nature. It places a fundamental limit to the conductivity of graphene and influences its properties. However the degree of the influence of the corrugation has not been well established because of the little knowledge about its spectrum in suspended graphene. We present a transmission electron microscopy technique that enables us to measure the average corrugation height and length. We applied the technique also to measure the temperature dependence of the corrugation. The difference in corrugation between suspended and supported graphene has been illustrated.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 31
DOI: 10.1103/PhysRevB.84.235417
|
|
|
“Mécanismes de la non-stoechiométrie dans les nouveaux supraconducteurs à, haute Tc”. Hervieu M, Michel C, Martin C, Huvé, M, Van Tendeloo G, Maignan A, Pelloquin D, Goutenoire F, Raveau B, Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation 4, 2057 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
|
|
|
“Mechanical switching of nanoscale multiferroic phase boundaries”. Li YJ, Wang JJ, Ye JC, Ke XX, Gou GY, Wei Y, Xue F, Wang J, Wang CS, Peng RC, Deng XL, Yang Y, Ren XB, Chen LQ, Nan CW, Zhang JX;, Advanced functional materials 25, 3405 (2015). http://doi.org/10.1002/adfm.201500600
Abstract: Tuning the lattice degree of freedom in nanoscale functional crystals is critical to exploit the emerging functionalities such as piezoelectricity, shape-memory effect, or piezomagnetism, which are attributed to the intrinsic lattice-polar or lattice-spin coupling. Here it is reported that a mechanical probe can be a dynamic tool to switch the ferroic orders at the nanoscale multiferroic phase boundaries in BiFeO3 with a phase mixture, where the material can be reversibly transformed between the soft tetragonal-like and the hard rhombohedral-like structures. The microscopic origin of the nonvolatile mechanical switching of the multiferroic phase boundaries, coupled with a reversible 180 degrees rotation of the in-plane ferroelectric polarization, is the nanoscale pressure-induced elastic deformation and reconstruction of the spontaneous strain gradient across the multiferroic phase boundaries. The reversible control of the room-temperature multiple ferroic orders using a pure mechanical stimulus may bring us a new pathway to achieve the potential energy conversion and sensing applications.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 23
DOI: 10.1002/adfm.201500600
|
|
|
“Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium”. Delabie A, Sioncke S, Rip J, van Elshocht S, Caymax M, Pourtois G, Pierloot K, The journal of physical chemistry: C : nanomaterials and interfaces 115, 17523 (2011). http://doi.org/10.1021/jp206070y
Abstract: Germanium combined with high-κ dielectrics is investigated for the next generations of CMOS devices. Therefore, we study reaction mechanisms for Al2O3 atomic layer deposition on sulfur passivated Ge using calculations based on density functional theory and total reflection X-ray fluorescence (TXRF). TXRF indicates 6 S/nm2 and 4 Al/nm2 after the first TMA/H2O reaction cycle, and growth inhibition from the second reaction cycle on. Calculations are performed on molecular clusters representing −GeSH surface sites. The calculations confirm that the TMA reaction does not affect the S content. On fully SH-terminated Ge, TMA favorably reacts with up to three −GeSH sites, resulting in a near tetrahedral Al coordination. Electron deficient structures with a GeS site shared between two Al atoms are proposed. The impact of the cluster size on the structures and reaction energetics is systematically investigated.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.536
Times cited: 9
DOI: 10.1021/jp206070y
|
|
|
“Mechanisms of double magnetic exchange in dilute magnetic semiconductors”. Fleurov V, Kikoin K, Ivanov VA, Krstajic PM, Peeters FM, Journal of magnetism and magnetic materials
T2 –, International Conference on Magnetism (ICM 2003), JUL 27-AUG 01, 2003, Rome, ITALY 272, 1967 (2004). http://doi.org/10.1016/j.jmmm.2003.12.1067
Abstract: A microscopic Hamiltonian for interacting manganese impurities in dilute magnetic semiconductors (DMS) is derived. It is shown that in p-type III-V DMS, the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile and localized holes near the top of the valence band play the role of unoccupied p-orbitals which induce ferromagnetism. T-C estimated from the proposed kinematic exchange agrees with experiments on (Ga,Mn)As. The model is also applicable to the p-doped (Ga,Mn)P system. The magnetic ordering in n-type (Ga,Mn)N is due to exchange between the electrons localized on the levels lying deep in the forbidden energy gap. This mechanism is even closer to the original Zener mechanism. (C) 2003 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.63
Times cited: 12
DOI: 10.1016/j.jmmm.2003.12.1067
|
|
|
“Melting of anisotropically confined Coulomb balls”. Apolinario SWS, Peeters FM, Physical review : B : condensed matter and materials physics 78, 024202 (2008). http://doi.org/10.1103/PhysRevB.78.024202
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 10
DOI: 10.1103/PhysRevB.78.024202
|
|
|
“Metal to insulator transition in the n-type hollandite vanadate Pb1.6V8O16”. Maignan A, Lebedev OI, Van Tendeloo G, Martin C, Hebert S, Physical review : B : condensed matter and materials physics 82, 035122 (2010). http://doi.org/10.1103/PhysRevB.82.035122
Abstract: The transport and magnetic measurements of polycrystalline Pb1.6V8O16 hollandite reveal a concomitant metal to insulator and antiferromagnetic transition at TMI≈140 K. A clear localization is found below TMI, evidenced by a rapid increase in the absolute value of the negative Seebeck coefficient. The structural study by x-ray and transmission electron microscopy confirms the hollandite structure and shows that no structural transition occurs at TMI, ruling out a possible charge orbital ordering. The negative Seebeck coefficient observed from 50 K up to 900 K, with values reaching S=−38 μV K−1 at 900 K, is explained by the electron doping of ∼1.4e− in the V empty t2g orbitals responsible for the bad metal resistivity (ρ900 K∼2 mΩ cm). As this S value is close to that obtained by considering only the spin and orbital degeneracies, it is expected that |S| for such vanadates will not be sensitive at high temperature to the t2g band filling
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 10
DOI: 10.1103/PhysRevB.82.035122
|
|
|
“Microscopic model of surfaces in orientationally disordered ionic crystals : the (001) surface of KCN”. Zieliński P, Michel KH, Physical review : B : condensed matter and materials physics 46, 4806 (1992). http://doi.org/10.1103/PhysRevB.46.4806
Abstract: The crystallographic structure and the distribution of orientations of molecular ions are studied near the surface in an orientationally disordered crystal with the use of a Green-function formalism. The orientational degrees of freedom are treated by means of symmetry-adapted functions of angular coordinates. The structure of the (001) surface of KCN in its cubic fcc phase is then predicted using the existing data on the interaction of the ions K+ and CN-. A local antiferroelectric and antiferroelastic order i shown to exist in the surface region. The magnitude of the order and the spatial extent of the ordered re ion increase as the temperature approaches the point of the phase transition to the ordered phase. The,influence of the external electric field on the structure of the surface is predicted.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 4
DOI: 10.1103/PhysRevB.46.4806
|
|