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Records |
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Author |
de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
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Title |
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon |
Type |
A1 Journal article |
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Year |
2003 |
Publication |
Physica: B : condensed matter
T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK |
Abbreviated Journal |
Physica B |
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Volume |
340 |
Issue |
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Pages |
1013-1017 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved. |
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Corporate Author |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000188300200213 |
Publication Date |
2003-11-24 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0921-4526; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.386 |
Times cited |
4 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.386; 2003 IF: 0.908 |
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Call Number |
UA @ lucian @ c:irua:103784 |
Serial |
25 |
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Permanent link to this record |
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Author |
De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Microelectronic engineering |
Abbreviated Journal |
Microelectron Eng |
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Volume |
45 |
Issue |
2-3 |
Pages |
277-282 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved. |
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Corporate Author |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000081748600023 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0167-9317; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.806 |
Times cited |
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Open Access |
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Notes |
Fwo-G.0051.97; Fwo-G.00117.86 |
Approved |
Most recent IF: 1.806; 1999 IF: 0.815 |
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Call Number |
UA @ lucian @ c:irua:95791 |
Serial |
47 |
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Permanent link to this record |
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Author |
de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
The review of scientific instruments |
Abbreviated Journal |
Rev Sci Instrum |
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Volume |
70 |
Issue |
9 |
Pages |
3661-3663 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6]. |
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Corporate Author |
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Place of Publication |
New York, N.Y. |
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Language |
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Wos |
000082289200026 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0034-6748; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.515 |
Times cited |
5 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.515; 1999 IF: 1.293 |
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Call Number |
UA @ lucian @ c:irua:103487 |
Serial |
48 |
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Permanent link to this record |
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Author |
de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. |
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Title |
Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy |
Type |
A1 Journal article |
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Year |
2004 |
Publication |
Journal of the electrochemical society |
Abbreviated Journal |
J Electrochem Soc |
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Volume |
151 |
Issue |
9 |
Pages |
G598-G605 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Infrared absorption spectra of oxygen precipitates in boron-doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function representation of composite materials. The aspect ratio of the platelet precipitates is determined by transmission electron microscopy measurements. The analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOγ precipitates are formed with the same composition as in the lightly doped case. In the heavily boron-doped (>10(18) cm(-3)) samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3, with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. (C) 2004 The Electrochemical Society. |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000223622000072 |
Publication Date |
2004-08-30 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0013-4651; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.259 |
Times cited |
13 |
Open Access |
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Notes |
Fwo; Iuap P5/01 |
Approved |
Most recent IF: 3.259; 2004 IF: 2.356 |
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Call Number |
UA @ lucian @ c:irua:103760 |
Serial |
330 |
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Permanent link to this record |
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Author |
De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
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Title |
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy |
Type |
P1 Proceeding |
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Year |
2002 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
183-194 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. |
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Corporate Author |
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Publisher |
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Place of Publication |
S.l. |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1-56677-344-X |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:94950 |
Serial |
344 |
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Permanent link to this record |
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Author |
de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. |
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Title |
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Physica: B : condensed matter
T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY |
Abbreviated Journal |
Physica B |
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Volume |
308 |
Issue |
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Pages |
294-297 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000173660100073 |
Publication Date |
2002-10-15 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0921-4526; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.386 |
Times cited |
3 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.386; 2001 IF: 0.663 |
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Call Number |
UA @ lucian @ c:irua:103389 |
Serial |
345 |
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Permanent link to this record |
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Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
Inst Phys Conf Ser |
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Volume |
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Issue |
164 |
Pages |
495-498 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation. |
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Place of Publication |
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Wos |
000166835300106 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-7503-0650-5; 0951-3248 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:102918 |
Serial |
376 |
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Permanent link to this record |
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Author |
Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K. |
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Title |
Defects in high-dose oxygen implanted silicon : a TEM study |
Type |
A1 Journal article |
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Year |
1991 |
Publication |
Vacuum: the international journal and abstracting service for vacuum science and technology
T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND |
Abbreviated Journal |
Vacuum |
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Volume |
42 |
Issue |
5-6 |
Pages |
367-369 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer. |
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Publisher |
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Place of Publication |
Oxford |
Editor |
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Language |
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Wos |
A1991EV61700007 |
Publication Date |
2002-10-19 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0042-207X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.858 |
Times cited |
4 |
Open Access |
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Notes |
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Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 # |
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Call Number |
UA @ lucian @ c:irua:104022 |
Serial |
629 |
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Permanent link to this record |
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Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Physica status solidi: A: applied research
T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland |
Abbreviated Journal |
Phys Status Solidi A |
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Volume |
171 |
Issue |
1 |
Pages |
147-157 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape. |
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Publisher |
Wiley |
Place of Publication |
Berlin |
Editor |
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Language |
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Wos |
000078539700020 |
Publication Date |
2002-09-10 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0031-8965;1521-396X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
40 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:95798 |
Serial |
1152 |
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Permanent link to this record |
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Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
Phys Status Solidi A |
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Volume |
171 |
Issue |
1 |
Pages |
147-157 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Corporate Author |
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Publisher |
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Place of Publication |
Berlin |
Editor |
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Wos |
000078539700020 |
Publication Date |
0000-00-00 |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0031-8965 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
40 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:29687 |
Serial |
1153 |
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Permanent link to this record |
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Author |
van Landuyt, J.; Vanhellemont, J. |
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Title |
High-resolution electron microscopy for semiconducting materials science |
Type |
H3 Book chapter |
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Year |
1994 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
1109-1147 |
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Keywords |
H3 Book chapter; Electron microscopy for materials research (EMAT) |
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Address |
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Corporate Author |
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Publisher |
Elsevier |
Place of Publication |
Amsterdam |
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Wos |
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Publication Date |
0000-00-00 |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:10008 |
Serial |
1449 |
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Permanent link to this record |
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Author |
Vanhellemont, J.; Claeys, C.; van Landuyt, J. |
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Title |
In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
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Volume |
150 |
Issue |
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Pages |
497-506 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Publisher |
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Place of Publication |
Berlin |
Editor |
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Language |
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Wos |
A1995RQ21500043 |
Publication Date |
2007-01-12 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0031-8965;1521-396X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
6 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:13293 |
Serial |
1582 |
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Permanent link to this record |
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Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation |
Type |
H3 Book chapter |
|
Year |
1997 |
Publication |
|
Abbreviated Journal |
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Volume |
|
Issue |
|
Pages |
63-92 |
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Keywords |
H3 Book chapter; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Kluwer Academic |
Place of Publication |
s.l. |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:21412 |
Serial |
1718 |
|
Permanent link to this record |
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Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
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Title |
New intermediate defect configuration in Si studied by in situ HREM irradiation |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Conference series of the Institute of Physics |
Abbreviated Journal |
|
|
|
Volume |
157 |
Issue |
|
Pages |
43-46 |
|
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000071954600006 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
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ISSN |
0305-2346 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:21428 |
Serial |
2318 |
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Permanent link to this record |
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Author |
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. |
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Title |
Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Nuclear instruments and methods in physics research |
Abbreviated Journal |
Nucl Instrum Meth B |
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Volume |
B112 |
Issue |
|
Pages |
133-138 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1996UW20100029 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
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ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.124 |
Times cited |
4 |
Open Access |
|
|
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Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:15453 |
Serial |
2423 |
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Permanent link to this record |
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Author |
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. |
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Title |
Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope |
Type |
P1 Proceeding |
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Year |
1996 |
Publication |
Materials Research Society symposium proceedings |
Abbreviated Journal |
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Volume |
404 |
Issue |
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Pages |
189-194 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Wuhan |
Editor |
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Language |
|
Wos |
A1996BG19E00025 |
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
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Series Volume |
|
Series Issue |
|
Edition |
|
|
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ISSN |
0272-9172 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
1 |
Open Access |
|
|
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:15457 |
Serial |
2424 |
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Permanent link to this record |
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Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
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Title |
On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope |
Type |
A1 Journal article |
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Year |
1998 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
Philos Mag A |
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Volume |
77 |
Issue |
2 |
Pages |
423-435 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000071976400010 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
|
Edition |
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ISSN |
0141-8610; 1364-2804 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
23 |
Open Access |
|
|
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:29671 |
Serial |
2440 |
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Permanent link to this record |
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Author |
Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. |
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Title |
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques |
Type |
A1 Journal article |
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Year |
2002 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
91 |
Issue |
4 |
Pages |
2493-2498 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Infrared absorption spectra of polyhedral and platelet oxygen precipitates in silicon are analyzed using a modified Day-Thorpe approach [J. Phys.: Condens. Matter 11, 2551 (1999)]. The aspect ratio of the precipitates is determined by transmission electron microscopy analysis. The reduced spectral function and the stoichiometry of the precipitate are extracted from the absorption spectra and the amount of precipitated interstitial oxygen. The experimental absorption spectra can be divided in a set with a Frohlich frequency of around 1100 cm(-1) and in a set with a Frohlich frequency between 1110 and 1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a differing stoichiometry, but to the detailed structure of the reduced spectral function. Inverse modeling of the spectra suggests that the oxide precipitates consist of substoichiometric SiOgamma with gamma=1.17+/-0.14. (C) 2002 American Institute of Physics. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000173553800114 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
27 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.068; 2002 IF: 2.281 |
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Call Number |
UA @ lucian @ c:irua:103372 |
Serial |
2542 |
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Permanent link to this record |
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Author |
Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
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Title |
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Materials science and technology |
Abbreviated Journal |
Mater Sci Tech-Lond |
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Volume |
11 |
Issue |
11 |
Pages |
1194-1202 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Inst Materials |
Place of Publication |
London |
Editor |
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Language |
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Wos |
A1995TQ95100016 |
Publication Date |
2014-01-09 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0267-0836;1743-2847; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
0.995 |
Times cited |
7 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:95911 |
Serial |
2654 |
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Permanent link to this record |
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Author |
Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
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Title |
Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope |
Type |
A3 Journal article |
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Year |
1995 |
Publication |
Materials science and technology |
Abbreviated Journal |
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Volume |
11 |
Issue |
|
Pages |
1194-1204 |
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Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
A1995TQ95100016 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
|
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
|
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Impact Factor |
|
Times cited |
7 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:13297 |
Serial |
2655 |
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Permanent link to this record |
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Author |
Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; |
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Title |
Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry |
Type |
A1 Journal article |
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Year |
1993 |
Publication |
Applied surface science
T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE |
Abbreviated Journal |
Appl Surf Sci |
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Volume |
63 |
Issue |
1-4 |
Pages |
45-51 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1993KF03400009 |
Publication Date |
2002-10-16 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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|
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0169-4332; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.711 |
Times cited |
13 |
Open Access |
|
|
|
Notes |
|
Approved |
|
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|
Call Number |
UA @ lucian @ c:irua:104539 |
Serial |
2932 |
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Permanent link to this record |
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Author |
Vanhellemont, J.; Bender, H.; van Landuyt, J. |
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Title |
TEM studies of processed Si device materials |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Conference series of the Institute of Physics |
Abbreviated Journal |
|
|
|
Volume |
157 |
Issue |
|
Pages |
393-402 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Recent developments in the field of TEM characterisation of Si device materials are discussed and illustrated by a few case studies of material in different stages of various kinds of processing. Important challenges are the ever decreasing defect densities and device feature sizes. Defect delineation techniques using large area inspection tools yielding accurate coordinates of the defects to be studied have therefore become an essential part of the TEM analysis procedure. The possibility to transfer these defect coordinates without loss of accuracy to tools for local TEM specimen preparation is also a conditio sine qua non for a successful analysis. Insitu TEM remains important as dynamic processes can be observed and analysed under well defined experimental conditions. As case studies illustrating new developments, results are presented on defects in as-grown Ct silicon, on in-situ studies in processed silicon, on problem sites in advanced integrated circuit structures and on assessment of localised strain fields in the nm size scale. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000071954600079 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0305-2346 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:21430 |
Serial |
3486 |
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Permanent link to this record |