Records |
Author |
Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. |
Title |
A 2a2b3c superstructure in hexagonal NiS1-x: a study by means of electron diffraction and HREM |
Type |
A1 Journal article |
Year |
1993 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
Volume |
126 |
Issue |
|
Pages |
457-465 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1993KH92500029 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-0248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.698 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:7499 |
Serial |
9 |
Permanent link to this record |
|
|
|
Author |
Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. |
Title |
A 2a2a3c superstructure in hexagonal Ni1-xS : a study by means of electron-diffraction and HRTEM |
Type |
A1 Journal article |
Year |
1993 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
Volume |
126 |
Issue |
2-3 |
Pages |
457-465 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The high temperature phase of Ni1-xS has the NiAs-type structure. The coexistence of two superstructures, ''3a3a3c'' and ''2a2a3c'' with the basic phase is confirmed by means of electron diffraction. The 2a2a3c superstructure is studied by means of electron diffraction and high resolution electron microscopy. A structure model is proposed based on the periodic insertion of stacking faults in the NiAs-type basic structure and the ordering of vacancies in alternate metal-atom layers. Microtwinning in very narrow slabs is found to be a main feature of the 2a2a3c regions and two defect models are discussed. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1993KH92500029 |
Publication Date |
2002-10-16 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-0248; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.698 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:103012 |
Serial |
23 |
Permanent link to this record |
|
|
|
Author |
de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Title |
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon |
Type |
A1 Journal article |
Year |
2003 |
Publication |
Physica: B : condensed matter
T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK |
Abbreviated Journal |
Physica B |
Volume |
340 |
Issue |
|
Pages |
1013-1017 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
000188300200213 |
Publication Date |
2003-11-24 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0921-4526; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.386 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.386; 2003 IF: 0.908 |
Call Number |
UA @ lucian @ c:irua:103784 |
Serial |
25 |
Permanent link to this record |
|
|
|
Author |
de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Title |
Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon |
Type |
A1 Journal article |
Year |
1999 |
Publication |
The review of scientific instruments |
Abbreviated Journal |
Rev Sci Instrum |
Volume |
70 |
Issue |
9 |
Pages |
3661-3663 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6]. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000082289200026 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0034-6748; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.515 |
Times cited |
5 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.515; 1999 IF: 1.293 |
Call Number |
UA @ lucian @ c:irua:103487 |
Serial |
48 |
Permanent link to this record |
|
|
|
Author |
Zhang, X.F.; Zhang, X.B.; Van Tendeloo, G.; Amelinckx, S.; op de Beeck, M.; van Landuyt, J. |
Title |
Carbon nano-tubes: their formation process and observation by electron microscopy |
Type |
A1 Journal article |
Year |
1993 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
Volume |
130 |
Issue |
|
Pages |
368-382 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1993LK45300003 |
Publication Date |
2002-10-16 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-0248; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.698 |
Times cited |
190 |
Open Access |
|
Notes |
|
Approved |
|
Call Number |
UA @ lucian @ c:irua:6786 |
Serial |
281 |
Permanent link to this record |
|
|
|
Author |
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
Title |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
Type |
A1 Journal article |
Year |
2001 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
|
Volume |
|
Issue |
169 |
Pages |
481-484 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed. |
Address |
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Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0-7503-0818-4 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:95163 |
Serial |
311 |
Permanent link to this record |
|
|
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Verbeeck, A.; de Keyzer, R. |
Title |
Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry |
Type |
A1 Journal article |
Year |
1991 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
Volume |
110 |
Issue |
|
Pages |
930-941 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1991FL02100033 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-0248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.698 |
Times cited |
40 |
Open Access |
|
Notes |
|
Approved |
|
Call Number |
UA @ lucian @ c:irua:48349 |
Serial |
321 |
Permanent link to this record |
|
|
|
Author |
de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Title |
Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy |
Type |
A1 Journal article |
Year |
2004 |
Publication |
Journal of the electrochemical society |
Abbreviated Journal |
J Electrochem Soc |
Volume |
151 |
Issue |
9 |
Pages |
G598-G605 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Infrared absorption spectra of oxygen precipitates in boron-doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function representation of composite materials. The aspect ratio of the platelet precipitates is determined by transmission electron microscopy measurements. The analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOγ precipitates are formed with the same composition as in the lightly doped case. In the heavily boron-doped (>10(18) cm(-3)) samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3, with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. (C) 2004 The Electrochemical Society. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000223622000072 |
Publication Date |
2004-08-30 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0013-4651; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.259 |
Times cited |
13 |
Open Access |
|
Notes |
Fwo; Iuap P5/01 |
Approved |
Most recent IF: 3.259; 2004 IF: 2.356 |
Call Number |
UA @ lucian @ c:irua:103760 |
Serial |
330 |
Permanent link to this record |
|
|
|
Author |
de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. |
Title |
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM |
Type |
A1 Journal article |
Year |
2001 |
Publication |
Physica: B : condensed matter
T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY |
Abbreviated Journal |
Physica B |
Volume |
308 |
Issue |
|
Pages |
294-297 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
000173660100073 |
Publication Date |
2002-10-15 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0921-4526; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.386 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.386; 2001 IF: 0.663 |
Call Number |
UA @ lucian @ c:irua:103389 |
Serial |
345 |
Permanent link to this record |
|
|
|
Author |
Bernaerts, D.; op de Beeck, M.; Amelinckx, S.; van Landuyt, J.; Van Tendeloo, G. |
Title |
The chirality of carbon nanotubules determined by dark-field electron microscopy |
Type |
A1 Journal article |
Year |
1996 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
|
Volume |
74 |
Issue |
3 |
Pages |
723-740 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Multishell carbon nanotubules are studied by means of diffraction contrast dark field images. This results in an electron microscopy method for the determination of the sign of the chiral angles in carbon nanotubes. The method is justified by a reasoning either in direct space or in diffraction space. We also investigate a carbon nanotubule exhibiting a bend and we confront the observations with the heptagon-pentagon pair model. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
London |
Editor |
|
Language |
|
Wos |
A1996VG17300010 |
Publication Date |
2007-07-08 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0141-8610;1460-6992; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
20 |
Open Access |
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
Call Number |
UA @ lucian @ c:irua:15456 |
Serial |
359 |
Permanent link to this record |
|
|
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Title |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
Type |
A1 Journal article |
Year |
1999 |
Publication |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
Inst Phys Conf Ser |
Volume |
|
Issue |
164 |
Pages |
495-498 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Wos |
000166835300106 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0-7503-0650-5; 0951-3248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:102918 |
Serial |
376 |
Permanent link to this record |
|
|
|
Author |
Nistor, L.C.; van Landuyt, J.; Barton, J.D.; Hole, D.E.; Skelland, N.D.; Townsend, P.D. |
Title |
Colloid size distributions in ion implanted glass |
Type |
A1 Journal article |
Year |
1993 |
Publication |
Journal of non-crystalline solids |
Abbreviated Journal |
J Non-Cryst Solids |
Volume |
162 |
Issue |
|
Pages |
217-224 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1993LY37100002 |
Publication Date |
2003-06-21 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-3093; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.766 |
Times cited |
63 |
Open Access |
|
Notes |
|
Approved |
INSTRUMENTS & INSTRUMENTATION 31/56 Q3 # NUCLEAR SCIENCE & TECHNOLOGY 9/32 Q2 # PHYSICS, PARTICLES & FIELDS 24/28 Q4 # SPECTROSCOPY 28/43 Q3 # |
Call Number |
UA @ lucian @ c:irua:6787 |
Serial |
389 |
Permanent link to this record |
|
|
|
Author |
Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
Title |
A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals |
Type |
A1 Journal article |
Year |
1996 |
Publication |
The journal of imaging science and technology |
Abbreviated Journal |
J Imaging Sci Techn |
Volume |
40 |
Issue |
|
Pages |
189-201 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Springfield, Va |
Editor |
|
Language |
|
Wos |
A1996VL09200003 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1062-3701 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
0.349 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 # |
Call Number |
UA @ lucian @ c:irua:15428 |
Serial |
418 |
Permanent link to this record |
|
|
|
Author |
Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
Title |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
Type |
A1 Journal article |
Year |
2000 |
Publication |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
Abbreviated Journal |
Mrs Internet J N S R |
Volume |
5 |
Issue |
s:[1] |
Pages |
art. no.-W11.38 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Materials research society |
Place of Publication |
Warrendale |
Editor |
|
Language |
|
Wos |
000090103600097 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1092-5783 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:103471 |
Serial |
423 |
Permanent link to this record |
|
|
|
Author |
Amelinckx, S.; Luyten, W.; Krekels, T.; Van Tendeloo, G.; van Landuyt, J. |
Title |
Conical, helically woud, graphite whiskers: a limliting member of the “fullerenes”? |
Type |
A1 Journal article |
Year |
1992 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
Volume |
121 |
Issue |
|
Pages |
543-558 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1992JK56000001 |
Publication Date |
2002-10-16 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-0248; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.698 |
Times cited |
43 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:4103 |
Serial |
492 |
Permanent link to this record |
|
|
|
Author |
Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A. |
Title |
Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition |
Type |
A1 Journal article |
Year |
1999 |
Publication |
Journal of vacuum science and technology: A: vacuum surfaces and films |
Abbreviated Journal |
J Vac Sci Technol A |
Volume |
17 |
Issue |
1 |
Pages |
249-255 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000078136300038 |
Publication Date |
2002-07-27 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0734-2101; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.374 |
Times cited |
8 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.374; 1999 IF: 1.742 |
Call Number |
UA @ lucian @ c:irua:29689 |
Serial |
581 |
Permanent link to this record |
|
|
|
Author |
van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W. |
Title |
Crystallography of fullerites and related graphene textures |
Type |
A1 Journal article |
Year |
1994 |
Publication |
Materials science forum |
Abbreviated Journal |
|
Volume |
150/151 |
Issue |
|
Pages |
53-64 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Lausanne |
Editor |
|
Language |
|
Wos |
A1994BC12F00004 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0255-5476; 1662-9752 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:10001 |
Serial |
590 |
Permanent link to this record |
|
|
|
Author |
Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O. |
Title |
Defect characterization in high temperature implanted 6H-SiC using TEM |
Type |
A1 Journal article |
Year |
1997 |
Publication |
Nuclear instruments and methods in physics research: B |
Abbreviated Journal |
Nucl Instrum Meth B |
Volume |
127/128 |
Issue |
|
Pages |
347-349 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Wos |
A1997XG60500078 |
Publication Date |
2002-07-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.109 |
Times cited |
17 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.109; 1997 IF: 1.016 |
Call Number |
UA @ lucian @ c:irua:21411 |
Serial |
613 |
Permanent link to this record |
|
|
|
Author |
van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. |
Title |
Defects and growth mechanisms of AgCl(100) tabular crystals |
Type |
A1 Journal article |
Year |
1998 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
Volume |
187 |
Issue |
|
Pages |
410-420 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
000073710800014 |
Publication Date |
2002-07-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-0248; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.751 |
Times cited |
8 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.751; 1998 IF: 1.307 |
Call Number |
UA @ lucian @ c:irua:29675 |
Serial |
625 |
Permanent link to this record |
|
|
|
Author |
Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K. |
Title |
Defects in high-dose oxygen implanted silicon : a TEM study |
Type |
A1 Journal article |
Year |
1991 |
Publication |
Vacuum: the international journal and abstracting service for vacuum science and technology
T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND |
Abbreviated Journal |
Vacuum |
Volume |
42 |
Issue |
5-6 |
Pages |
367-369 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Oxford |
Editor |
|
Language |
|
Wos |
A1991EV61700007 |
Publication Date |
2002-10-19 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0042-207X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.858 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 # |
Call Number |
UA @ lucian @ c:irua:104022 |
Serial |
629 |
Permanent link to this record |
|
|
|
Author |
Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
Title |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
Type |
A1 Journal article |
Year |
2000 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
Volume |
77 |
Issue |
4 |
Pages |
507-509 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X]. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000088225400016 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.411 |
Times cited |
44 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 3.411; 2000 IF: 3.906 |
Call Number |
UA @ lucian @ c:irua:103448 |
Serial |
712 |
Permanent link to this record |
|
|
|
Author |
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. |
Title |
Direct observation of clusters in some FCC alloys by HREM |
Type |
A1 Journal article |
Year |
1994 |
Publication |
Icem |
Abbreviated Journal |
|
Volume |
13 |
Issue |
|
Pages |
447-448 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Wos |
A1994BE09X00207 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:10052 |
Serial |
716 |
Permanent link to this record |
|
|
|
Author |
Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Kononenko, T.V.; Obraztsova, E.D.; Strelnitsky, V.E. |
Title |
Direct observation of laser-induced crystallization of a-C : H films |
Type |
A1 Journal article |
Year |
1994 |
Publication |
Applied physics A : materials science & processing |
Abbreviated Journal |
|
Volume |
58 |
Issue |
2 |
Pages |
137-144 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The post-growth modification of diamond-like amorphous hydrogenated carbon a-C:H films by laser treatment has been studied by transmission electron microscopy and Raman spectroscopy. a-C:H films grown on Si substrates by benzene decomposition in a rf glow discharge were irradiated with 15 ns pulses of a KrF-excimer laser with fluences in the ran e of E = 50-700 mJ/cm(2). At fluences below 100 mJ/cm(2) an increase in the number of graphitic clusters and in their ordering was evidenced from Raman spectra, while the film structure remained amorphous according to electron microscopy and electron diffraction observations. At higher fluences the appearance of diamond particles of 2-7 nm size, embedded into the lower crystallized graphitic matrix, was observed and simultaneously a progressive growth of graphite nanocrystals with dimensions from 2 nm to 4 nm was deduced from Raman measurements. The maximum thickness of the crystallized surface layer (approximate to 400 nm) and the degree of laser annealing are limited by the film ablation which starts at E > 250 mJ/cm(2). The laser-treated areas lose their chemical inertness. In particular, chemical etching in chromium acid becomes possible, which may be used for patterning the highly inert carbon films. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Heidelberg |
Editor |
|
Language |
|
Wos |
A1994MU87700005 |
Publication Date |
2004-10-24 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0721-7250;1432-0630; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
73 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:99924 |
Serial |
718 |
Permanent link to this record |
|
|
|
Author |
Fang, P.a.; Gu, H.; Wang, P.l.; Van Landuyt, J.; Vleugels, J.; Van der Biest, O.; |
Title |
Effect of powder coating on stabilizer distribution in CeO2-stabilized ZrO2 ceramics |
Type |
A1 Journal article |
Year |
2005 |
Publication |
Journal of the American Ceramic Society |
Abbreviated Journal |
J Am Ceram Soc |
Volume |
88 |
Issue |
7 |
Pages |
1929-1934 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The phase and microstructure relationship of 12 mol% CeO2-stabilized ZrO2 ceramics prepared from coated powder was investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy-dispersed Xray spectroscopy (EDS). As compared with the sample prepared with co-precipitated method, which exhibited a similar grain size distribution, the EDS analysis revealed that the powder coating induced a wide distribution of CeO2 solubility, which decreases monotonically with the increase of grain size. This variation of stabilizer content from grain to grain rendered many large grains in the monoclinic phase. Stronger cerium segregation to grain boundaries was observed between large grains, which often form thin amorphous films there. The inhomogeneous; CeO2 distribution keeps more tetragonal ZrO2 grains close to the phase boundary to facilitate the transforming toughness. Addition of an Al2O3 precursor in coated powders effectively raises the overall CeO2 stabilizer content in the grains and preserves more transformable tetragonal phase in the microstructure, which further enhanced the fracture toughness. The dependence of CeO2 solubility on grain size may be explained in a simple coating-controlled diffusion and growth process that deserves further investigation. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Columbus, Ohio |
Editor |
|
Language |
|
Wos |
000230128100040 |
Publication Date |
2005-06-23 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0002-7820;1551-2916; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.841 |
Times cited |
11 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.841; 2005 IF: 1.586 |
Call Number |
UA @ lucian @ c:irua:103156 |
Serial |
830 |
Permanent link to this record |
|
|
|
Author |
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
Title |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
Type |
A1 Journal article |
Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
|
Volume |
|
Issue |
169 |
Pages |
415-418 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0-7503-0818-4; 0951-3248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:103432 |
Serial |
877 |
Permanent link to this record |
|
|
|
Author |
Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Pervov, V.S.; Makhonina, E.V. |
Title |
Electron microscopic and X-ray structural analysis of the layered crystals TaReSe4: structure, defect structure, and microstructure, including rotation twins |
Type |
A1 Journal article |
Year |
1998 |
Publication |
Journal of solid state chemistry |
Abbreviated Journal |
J Solid State Chem |
Volume |
135 |
Issue |
|
Pages |
235-255 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
London |
Editor |
|
Language |
|
Wos |
000072900200008 |
Publication Date |
2002-10-07 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-4596; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.299 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.299; 1998 IF: 1.432 |
Call Number |
UA @ lucian @ c:irua:29672 |
Serial |
938 |
Permanent link to this record |
|
|
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; Millan, A.; de Keyzer, R. |
Title |
Electron microscopical investigation of AgBr needle crystals |
Type |
A1 Journal article |
Year |
1995 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
Volume |
151 |
Issue |
|
Pages |
335-341 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1995RE62100017 |
Publication Date |
2003-05-19 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-0248; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.698 |
Times cited |
14 |
Open Access |
|
Notes |
|
Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 # |
Call Number |
UA @ lucian @ c:irua:13163 |
Serial |
941 |
Permanent link to this record |
|
|
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. |
Title |
Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals |
Type |
A1 Journal article |
Year |
1997 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
Volume |
172 |
Issue |
|
Pages |
426-432 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1997WL65300018 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-0248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.751 |
Times cited |
15 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.751; 1997 IF: 1.259 |
Call Number |
UA @ lucian @ c:irua:21345 |
Serial |
942 |
Permanent link to this record |
|
|
|
Author |
Schryvers, D.; de Saegher, B.; van Landuyt, J. |
Title |
Electron microscopy and diffraction study of the composition dependency of the 3R microtwinned martensite in Ni-Al |
Type |
A1 Journal article |
Year |
1991 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
26 |
Issue |
|
Pages |
57-66 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
A1991EU98500007 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0025-5408 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.288 |
Times cited |
11 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:48348 |
Serial |
943 |
Permanent link to this record |
|
|
|
Author |
Volkov, V.V.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Zhukov, E.G.; Polulyak, E.S.; Novotortsev, V.M. |
Title |
Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport |
Type |
A1 Journal article |
Year |
1993 |
Publication |
Crystal research and technology |
Abbreviated Journal |
Cryst Res Technol |
Volume |
28 |
Issue |
8 |
Pages |
1051-1061 |
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The growth features of FeCr2S4 spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr7S12 and FeCr8S12, both based on the NiAs structure, can essentially inhibit the growth of large FeCr2S4 spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Berlin |
Editor |
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Language |
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Wos |
A1993MN86700003 |
Publication Date |
2007-01-13 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0232-1300;1521-4079; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
0.935 |
Times cited |
1 |
Open Access |
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Notes |
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Approved |
no |
Call Number |
UA @ lucian @ c:irua:6788 |
Serial |
952 |
Permanent link to this record |