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  Author Title Year Publication Volume Times cited Additional Links Links
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Ab initio modeling of few-layer dilute magnetic semiconductors 2021 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2021, Dallas, TX UA library record; WoS full record pdf doi
Reyntjens, P.D.; Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Ab-initio study of magnetically intercalated Tungsten diselenide 2020 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 23-OCT 06, 2020 UA library record; WoS full record pdf doi
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Carrier transport in a two-dimensional topological insulator nanoribbon in the presence of vacancy defects 2018 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 24-26, 2018, Austin, TX UA library record; WoS full record; WoS citing articles pdf doi
Reyntjens, P.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B. Ultrascaled graphene-capped interconnects : a quantum mechanical study 2023 Proceedings of the IEEE ... International Interconnect Technology Conference T2 – IEEE International Interconnect Technology Conference (IITC) / IEEE, Materials for Advanced Metallization Conference (MAM), MAY 22-25, 2023, Dresden, Germany UA library record; WoS full record pdf doi
Deylgat, E.; Chen, E.; Sorée, B.; Vandenberghe, W.G. Quantum transport study of contact resistance of edge- and top-contacted two-dimensional materials 2023 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2023, Kobe, Japan UA library record; WoS full record pdf doi
Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. Figure of merit for and identification of sub-60 mV/decade devices 2013 Applied physics letters 102 64 UA library record; WoS full record; WoS citing articles pdf doi
Sels, D.; Sorée, B.; Groeseneken, G. Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor 2011 Journal of computational electronics 10 12 UA library record; WoS full record; WoS citing articles doi
Magnus, W.; Brosens, F.; Sorée, B. Time dependent transport in 1D micro- and nanostructures: solving the Boltzmann and Wigner-Boltzmann equations 2009 Journal of physics : conference series 193 2 UA library record; WoS full record; WoS citing articles url doi
Bizindavyi, J.; Verhulst, A.S.; Smets, Q.; Verreck, D.; Sorée, B.; Groeseneken, G. Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes 2018 IEEE journal of the Electron Devices Society 6 5 UA library record; WoS full record; WoS citing articles url doi
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.L.; Magnus, W.; Sorée, B.; Groeseneken, G. Phonon-assisted tunneling in direct-bandgap semiconductors 2019 Journal of applied physics 125 2 UA library record; WoS full record; WoS citing articles pdf doi
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Critical behavior of the ferromagnets CrI₃, CrBr₃, and CrGeTe₃ and the antiferromagnet FeCl₂ : a detailed first-principles study 2021 Physical Review B 103 UA library record; WoS full record; WoS citing articles url doi
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers 2021 npj 2D Materials and Applications 5 UA library record; WoS full record; WoS citing articles url doi
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Vandenberghe, W.G. Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation 2021 Communications Physics 4 UA library record; WoS full record; WoS citing articles url doi
Vanderveken, F.; Tyberkevych, V.; Talmelli, G.; Sorée, B.; Ciubotaru, F.; Adelmann, C. Lumped circuit model for inductive antenna spin-wave transducers 2022 Scientific reports 12 UA library record; WoS full record; WoS citing articles url doi
Tiwari, S.; Van de Put, M.L.; Temst, K.; Vandenberghe, W.G.; Sorée, B. Atomistic modeling of spin and electron dynamics in two-dimensional magnets switched by two-dimensional topological insulators 2023 Physical review applied 19 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics 2008 Solid state communications 147 8 UA library record; WoS full record; WoS citing articles doi
Sorée, B.; Magnus, W. Quantized conductance without reservoirs : method of the nonequilibrium statistical operator 2007 Journal of computational electronics 6 UA library record; WoS full record doi
Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors 2016 Applied physics letters 108 13 UA library record; WoS full record; WoS citing articles doi
Bizindavyi, J.; Verhulst, A.S.; Verreck, D.; Sorée, B.; Groeseneken, G. Large variation in temperature dependence of band-to-band tunneling current in tunnel devices 2019 IEEE electron device letters 40 UA library record; WoS full record; WoS citing articles pdf doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors 2015 Journal of applied physics 118 9 UA library record; WoS full record; WoS citing articles doi
Moors, K.; Sorée, B.; Magnus, W. Modeling surface roughness scattering in metallic nanowires 2015 Journal of applied physics 118 11 UA library record; WoS full record; WoS citing articles url doi
Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Fischetti, M.V. Inter-ribbon tunneling in graphene: An atomistic Bardeen approach 2016 Journal of applied physics 119 6 UA library record; WoS full record; WoS citing articles url doi
Andrikopoulos, D.; Sorée, B.; De Boeck, J. Skyrmion-induced bound states on the surface of three-dimensional topological insulators 2016 Journal of applied physics 119 8 UA library record; WoS full record; WoS citing articles url doi
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach 2011 Journal of applied physics 109 41 UA library record; WoS full record; WoS citing articles doi
Toledano-Luque, M.; Matagne, P.; Sibaja-Hernandez, A.; Chiarella, T.; Ragnarsson, L.-A.; Sorée, B.; Cho, M.; Mocuta, A.; Thean, A. Superior reliability of junctionless pFinFETs by reduced oxide electric field 2014 IEEE electron device letters 35 13 UA library record; WoS full record; WoS citing articles doi
Kenawy, A.; Magnus, W.; Milošević, M.V.; Sorée, B. Electronically tunable quantum phase slips in voltage-biased superconducting rings as a base for phase-slip flux qubits 2020 Superconductor Science & Technology 33 4 UA library record; WoS full record; WoS citing articles pdf doi
Osca, J.; Sorée, B. Skyrmion spin transfer torque due to current confined in a nanowire 2020 Physical Review B 102 UA library record; WoS full record; WoS citing articles doi
Kenawy, A.; Magnus, W.; Milošević, M.V.; Sorée, B. Voltage-controlled superconducting magnetic memory 2019 AIP advances T2 – 64th Annual Conference on Magnetism and Magnetic Materials (MMM), NOV 04-08, 2019, Las Vegas, NV 9 UA library record; WoS full record doi
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides 2016 Journal of applied physics 120 6 UA library record; WoS full record; WoS citing articles url doi
Osca, J.; Sorée, B. Torque field and skyrmion motion by spin transfer torque in a quasi-2D interface in presence of strong spin-orbit interaction 2021 Journal Of Applied Physics 130 UA library record; WoS full record; WoS citing articles doi
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