| Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
| Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Kononenko, T.V.; Obraztsova, E.D.; Strelnitsky, V.E. |
Direct observation of laser-induced crystallization of a-C : H films |
1994 |
Applied physics A : materials science & processing |
58 |
73 |
UA library record; WoS full record; WoS citing articles |
| Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R. |
Electron-diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals |
1994 |
Physica status solidi: A |
143 |
7 |
UA library record; WoS full record; WoS citing articles |
| Luyten, W.; Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Férauge, C.; Gijbels, R.; Vasilev, M.G.; Shelyakin, A.A.; Lazarev, V.B. |
Electron microscopy and mass-spectrometry study of In0.72Ga0.28As0.62P0.38 lasers grown by liquid phase epitaxy |
1993 |
Physica status solidi: A: applied research |
140 |
3 |
UA library record; WoS full record; WoS citing articles |
| van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
The influence of crystal thickness on the image tone |
2003 |
Journal of imaging science |
47 |
|
UA library record; WoS full record; WoS citing articles |
| De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D. |
On the interpretation of HREM images of partially ordered alloys |
1995 |
Ultramicroscopy |
60 |
20 |
UA library record; WoS full record; WoS citing articles |
| Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope |
1998 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
77 |
23 |
UA library record; WoS full record; WoS citing articles |
| Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. |
Structural characterisation of erbium silicide thin films of an Si(111) substrate |
1996 |
Journal of alloys and compounds |
234 |
14 |
UA library record; WoS full record; WoS citing articles |
| Shpanchenko, R.V.; Nistor, L.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. |
Structural studies on new ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 |
1995 |
Journal of solid state chemistry |
114 |
23 |
UA library record; WoS full record; WoS citing articles |
| Zhang, X.B.; Zhang, X.F.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J.; Ivanov, V.; Nagy, J.B.; Lambin, P.; Lucas, A.A. |
The texture of catalytically grown coil-shaped carbon nanotubes |
1994 |
Europhysics letters |
27 |
168 |
UA library record; WoS full record; WoS citing articles |
| Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. |
Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays |
1999 |
Applied physics letters |
75 |
481 |
UA library record; WoS full record; WoS citing articles |
| Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
2001 |
Institute of physics conference series |
|
|
UA library record; WoS full record; |
| Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
|
|
UA library record; WoS full record; |
| Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
HREM investigation of a Fe/GaN/Fe tunnel junction |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
|
|
UA library record; WoS full record; |
| Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
1999 |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
|
|
UA library record; WoS full record; |
| Cassiers, K.; van der Voort, P.; Linssen, T.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
A counterion-catalyzed (S0H+)(X-I+) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions |
2003 |
The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical |
107 |
9 |
UA library record; WoS full record; WoS citing articles |
| Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. |
In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures |
2000 |
Physical review : B : condensed matter and materials physics |
61 |
27 |
UA library record; WoS full record; WoS citing articles |
| Xu, T.; Wang, P.; Fang, P.; Kan, Y.; Chen, L.; Vleugels, J.; Van der Biest, O.; van Landuyt, J. |
Phase assembly and microstructure of CeO2-doped ZrO2 ceramics prepared by spark plasma sintering |
2005 |
Journal of the European Ceramic Society |
25 |
13 |
UA library record; WoS full record; WoS citing articles |
| Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
Electron microscopy of carbon nanotubes and related structures |
1997 |
The journal of physics and chemistry of solids |
58 |
12 |
UA library record; WoS full record; WoS citing articles |
| Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G. |
Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures |
2001 |
Journal of the electrochemical society |
148 |
13 |
UA library record; WoS full record; WoS citing articles |
| Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope |
1995 |
Materials science and technology |
11 |
7 |
UA library record; WoS full record; WoS citing articles |
| Rembeza, E.S.; Richard, O.; van Landuyt, J. |
Influence of laser and isothermal treatments on microstructural properties of SnO2 films |
1999 |
Materials research bulletin |
34 |
17 |
UA library record; WoS full record; WoS citing articles |
| Nistor, L.C.; van Landuyt, J. |
Structural studies of diamond thin films grown from the arc plasma |
1998 |
Journal of materials research |
12 |
13 |
UA library record; WoS full record; WoS citing articles |
| Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
2001 |
Materials science in semiconductor processing |
4 |
|
UA library record; WoS full record |
| Volkov, V.V.; van Landuyt, J.; Marushkin, K.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas |
1997 |
Sensors and actuators : A : physical |
62 |
3 |
UA library record; WoS full record; WoS citing articles |
| Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures |
2001 |
Materials science in semiconductor processing |
4 |
6 |
UA library record; WoS full record; WoS citing articles |
| Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. |
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France |
120 |
2 |
UA library record; WoS full record; WoS citing articles |
| Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr |
112 |
9 |
UA library record; WoS full record; WoS citing articles |
| Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; |
Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry |
1993 |
Applied surface science
T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE |
63 |
13 |
UA library record; WoS full record; WoS citing articles |
| van Landuyt, J. |
The evolution of HVEM application in antwerp |
1991 |
Ultramicroscopy
T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan |
39 |
|
UA library record; WoS full record |
| Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J. |
Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application |
2000 |
Sensors and actuators : B : chemical |
68 |
51 |
UA library record; WoS full record; WoS citing articles |
