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	Author	Krsmanovic, R.; Morozov, V.A.; Lebedev, O.I.; Polizzi, S.; Speghini, A.; Bettinelli, M.; Van Tendeloo, G.
	Title	Structural and luminescence investigation on gadolinium gallium garnet nanocrystalline powders prepared by solution combustion synthesis			Type	A1 Journal article
	Year	2007	Publication	Nanotechnology	Abbreviated Journal	Nanotechnology
	Volume	18	Issue	32	Pages	325604-325609
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Nanocrystalline powders of undoped and lanthanide (Pr3+, Tm3+)- doped gadolinium gallium garnet, Gd3Ga5O12 (GGG), were prepared by propellant synthesis and studied by x-ray powder diffraction (XRD), electron diffraction (ED), high-resolution electron microscopy (HREM) and luminescence spectroscopy. The x-ray diffraction patterns of the GGG samples were analysed using the Rietveld method. The Rietveld refinement reveals the existence of two garnet-type phases: both are cubic (space group Ia $(3) over bar $d) with a slightly different lattice parameter and probably a slightly different composition. Electron diffraction and electron microscopy measurements confirm the x-ray diffraction results. EDX measurements for lanthanide-doped samples show that stable solid solutions with composition Gd(3-x)Ln(x)Ga(5)O(12), x approximate to 0.3 ( Ln = Pr; Tm) have been obtained. The luminescence properties of the Tm3+ -doped nanocrystalline GGG samples were measured and analysed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Bristol	Editor
	Language		Wos	000248231300010	Publication Date	2007-07-14
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0957-4484;1361-6528;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.44	Times cited	33	Open Access
	Notes	Iap5-01			Approved	Most recent IF: 3.44; 2007 IF: 3.310
	Call Number	UA @ lucian @ c:irua:104042			Serial	3195
Permanent link to this record



	Author	Liu, Y.-X.; Zhang, Y.-R.; Bogaerts, A.; Wang, Y.-N.
	Title	Electromagnetic effects in high-frequency large-area capacitive discharges : a review			Type	A1 Journal article
	Year	2015	Publication	Journal of vacuum science and technology: A: vacuum surfaces and films	Abbreviated Journal	J Vac Sci Technol A
	Volume	33	Issue	33	Pages	020801
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	In traditional capacitively coupled plasmas, the discharge can be described by an electrostatic model, in which the Poisson equation is employed to determine the electrostatic electric field. However, current plasma reactors are much larger and driven at a much higher frequency. If the excitation wavelength k in the plasma becomes comparable to the electrode radius, and the plasma skin depth d becomes comparable to the electrode spacing, the electromagnetic (EM) effects will become significant and compromise the plasma uniformity. In this regime, capacitive discharges have to be described by an EM model, i.e., the full set of Maxwells equations should be solved to address the EM effects. This paper gives an overview of the theory, simulation and experiments that have recently been carried out to understand these effects, which cause major uniformity problems in plasma processing for microelectronics and flat panel display industries. Furthermore, some methods for improving the plasma uniformity are also described and compared.
	Address
	Corporate Author				Thesis
	Publisher	A v s amer inst physics	Place of Publication	Melville	Editor
	Language		Wos	000355739500007	Publication Date	2015-02-12
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0734-2101;1520-8559;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.374	Times cited	10	Open Access
	Notes				Approved	Most recent IF: 1.374; 2015 IF: 2.322
	Call Number	c:irua:123541			Serial	903
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	Author	Zhang, Y.-R.; Gao, F.; Li, X.-C.; Bogaerts, A.; Wang, Y.-N.
	Title	Fluid simulation of the bias effect in inductive/capacitive discharges			Type	A1 Journal article
	Year	2015	Publication	Journal of vacuum science and technology: A: vacuum surfaces and films	Abbreviated Journal	J Vac Sci Technol A
	Volume	33	Issue	33	Pages	061303
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitive discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0300V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120V at 2MHz and 90V at 27.12 MHz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000365503800020	Publication Date	2015-08-07
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0734-2101;1520-8559;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.374	Times cited	9	Open Access
	Notes				Approved	Most recent IF: 1.374; 2015 IF: 2.322
	Call Number	c:irua:126824			Serial	1229
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	Author	Zhang, Y.-R.; Tinck, S.; De Schepper, P.; Wang, Y.-N.; Bogaerts, A.
	Title	Modeling and experimental investigation of the plasma uniformity in CF₄/O₂ capacitively coupled plasmas, operating in single frequency and dual frequency regime			Type	A1 Journal article
	Year	2015	Publication	Journal of vacuum science and technology: A: vacuum surfaces and films	Abbreviated Journal	J Vac Sci Technol A
	Volume	33	Issue	33	Pages	021310
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	A two-dimensional hybrid Monte Carlofluid model, incorporating a full-wave solution of Maxwell's equations, is employed to describe the behavior of high frequency (HF) and very high frequency capacitively coupled plasmas (CCPs), operating both at single frequency (SF) and dual frequency (DF) in a CF4/O2 gas mixture. First, the authors investigate the plasma composition, and the simulations reveal that besides CF4 and O2, also COF2, CF3, and CO2 are important neutral species, and CF+3 and F− are the most important positive and negative ions. Second, by comparing the results of the model with and without taking into account the electromagnetic effects for a SF CCP, it is clear that the electromagnetic effects are important, both at 27 and 60 MHz, because they affect the absolute values of the calculation results and also (to some extent) the spatial profiles, which accordingly affects the uniformity in plasma processing. In order to improve the plasma radial uniformity, which is important for the etch process, a low frequency (LF) source is added to the discharge. Therefore, in the major part of the paper, the plasma uniformity is investigated for both SF and DF CCPs, operating at a HF of 27 and 60 MHz and a LF of 2 MHz. For this purpose, the authors measure the etch rates as a function of position on the wafer in a wide range of LF powers, and the authors compare them with the calculated fluxes toward the wafer of the plasma species playing a role in the etch process, to explain the trends in the measured etch rate profiles. It is found that at a HF of 60 MHz, the uniformity of the etch rate is effectively improved by adding a LF power of 2 MHz and 300 W, while its absolute value increases by about 50%, thus a high etch rate with a uniform distribution is observed under this condition.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000355739500026	Publication Date	2015-01-29
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0734-2101;1520-8559;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.374	Times cited	3	Open Access
	Notes				Approved	Most recent IF: 1.374; 2015 IF: 2.322
	Call Number	c:irua:122650			Serial	2107
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	Author	Cremers, V.; Rampelberg, G.; Barhoum, A.; Walters, P.; Claes, N.; Oliveira, T.M. de; Assche, G.V.; Bals, S.; Dendooven, J.; Detavernier, C.
	Title	Oxidation barrier of Cu and Fe powder by Atomic Layer Deposition			Type	A1 Journal article
	Year	2018	Publication	Surface and coatings technology	Abbreviated Journal	Surf Coat Tech
	Volume	349	Issue	349	Pages	1032-1041
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Atomic layer deposition (ALD) is a vapor based technique which allows to deposit uniform, conformal films with a thickness control at the atomic scale. In this research, Al 2 O 3 coatings were deposited on micrometer-sized Fe and Cu powder (particles) using the thermal trimethylaluminum (TMA)/ water (H 2 O) process in a rotary pump-type ALD reactor. Rotation of the powder during deposition was required to obtain a pinhole-free ALD coating. The protective nature of the coating was evaluated by quantifying its effectiveness in protecting the metal particles during oxidative annealing treatments. The Al 2 O 3 coated powders were annealed in ambient air while in-situ thermogravimetric analysis (TGA) and in-situ x-ray diffraction (XRD) data were acquired. The thermal stability of a series of Cu and Fe powder with different Al 2 O 3 thicknesses were determined with TGA. In both samples a clear shift in oxidation temperature is visible. For Cu and Fe powder coated with 25 nm Al 2 O 3 , we observed an increase of the oxidation temperature with 300-400°C. For the Cu powder a thin film of only 8 nm is required to obtain an initial increase in oxidation temperature of 200°C. In contrast, for Fe powder a thicker coating of 25 nm is required. In both cases, the oxidation temperature increases with increasing thickness of the Al 2 O 3 coating. These results illustrate that the Al 2 O 3 thin film, deposited by the thermal ALD process (TMA/H 2 O) can be an efficient and pinhole-free barrier layer for micrometer-sized powder particles, provided that the powder is properly agitated during the process to ensure sufficient vapour-solid interaction.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000441492600108	Publication Date	2018-06-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0257-8972	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.589	Times cited	10	Open Access	OpenAccess
	Notes	The authors acknowledge financial support from the Strategic Initiative Materials in Flanders (SIM, SBO-FUNC project) and the Special Research Fund BOF of Ghent University (GOA 01G01513). J. D. acknowledges the Research Foundation Flanders (FWO-Vlaanderen) for a postdoctoral fellowship. N.C. and S.B. acknowledge financial support from European Research Council (ERC Starting Grant 335078-COLOURATOMS). The authors acknowledge S. Goeteyn for the assistance in preliminary depositions. (ROMEO:green; preprint:; postprint:can ; pdfversion:cannot); ecas_sara			Approved	Most recent IF: 2.589
	Call Number	EMAT @ emat @c:irua:152174UA @ admin @ c:irua:152174			Serial	4994
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	Author	Wang, M.; Chang, K.; Wang, L.G.; Dai, N.; Peeters, F.M.
	Title	Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires			Type	A1 Journal article
	Year	2009	Publication	Nanotechnology	Abbreviated Journal	Nanotechnology
	Volume	20	Issue	36	Pages	365202,1-365202,8
	Keywords	A1 Journal article; Condensed Matter Theory (CMT)
	Abstract	We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spinorbit interaction (RSOI) and the Dresselhaus spinorbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Bristol	Editor
	Language		Wos	000269077000003	Publication Date	2009-08-19
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0957-4484;1361-6528;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.44	Times cited	14	Open Access
	Notes				Approved	Most recent IF: 3.44; 2009 IF: 3.137
	Call Number	UA @ lucian @ c:irua:78933			Serial	588
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	Author	Llobet, E.; Espinosa, E.H.; Sotter, E.; Ionescu, R.; Vilanova, X.; Torres, J.; Felten, A.; Pireaux, J.J.; Ke, X.; Van Tendeloo, G.; Renaux, F.; Paint, Y.; Hecq, M.; Bittencourt, C.;
	Title	Carbon nanotube TiO₂ hybrid films for detecting traces of O₂			Type	A1 Journal article
	Year	2008	Publication	Nanotechnology	Abbreviated Journal	Nanotechnology
	Volume	19	Issue	37	Pages	375501-375511
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Hybrid titania films have been prepared using an adapted sol-gel method for obtaining well-dispersed hydrogen plasma-treated multiwall carbon nanotubes in either pure titania or Nb-doped titania. The drop-coating method has been used to fabricate resistive oxygen sensors based on titania or on titania and carbon nanotube hybrids. Morphology and composition studies have revealed that the dispersion of low amounts of carbon nanotubes within the titania matrix does not significantly alter its crystallization behaviour. The gas sensitivity studies performed on the different samples have shown that the hybrid layers based on titania and carbon nanotubes possess an unprecedented responsiveness towards oxygen (i.e. more than four times higher than that shown by optimized Nb-doped TiO(2) films). Furthermore, hybrid sensors containing carbon nanotubes respond at significantly lower operating temperatures than their non-hybrid counterparts. These new hybrid sensors show a strong potential for monitoring traces of oxygen (i.e. <= 10 ppm) in a flow of CO(2), which is of interest for the beverage industry.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Bristol	Editor
	Language		Wos	000258385600014	Publication Date	2008-08-02
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0957-4484;1361-6528;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.44	Times cited	48	Open Access
	Notes	Pai			Approved	Most recent IF: 3.44; 2008 IF: 3.446
	Call Number	UA @ lucian @ c:irua:103083			Serial	282
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	Author	Margueritat, J.; Gonzalo, J.; Afonso, C.N.; Hörmann, U.; Van Tendeloo, G.; Mlayah, A.; Murray, D.B.; Saviot, L.; Zhou, Y.; Hong, M.H.; Luk'yanchuk, B.S.
	Title	Surface enhanced Raman scattering of silver sensitized cobalt nanoparticles in metaldielectric nanocomposites			Type	A1 Journal article
	Year	2008	Publication	Nanotechnology	Abbreviated Journal	Nanotechnology
	Volume	19	Issue	37	Pages	375701,1-375701,4
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	We report the preparation of a new type of nanocomposite containing cobalt and silver nanoparticles organized in parallel layers with a well controlled separation. This arrangement allows the observation of an enhanced low-frequency Raman signal at the vibration frequency of cobalt nanoparticles excited through the surface plasmons of silver nanoparticles. Numerical simulations of the electric field confirm the emergence of hot spots when the separation between silver and cobalt nanoparticles is small enough.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Bristol	Editor
	Language		Wos	000258385600018	Publication Date	2008-08-02
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0957-4484;1361-6528;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.44	Times cited	11	Open Access
	Notes				Approved	Most recent IF: 3.44; 2008 IF: 3.446
	Call Number	UA @ lucian @ c:irua:81873			Serial	3396
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	Author	Cremers, V.; Rampelberg, G.; Baert, K.; Abrahami, S.; Claes, N.; de Oliveira, T.M.; Terryn, H.; Bals, S.; Dendooven, J.; Detavernier, C.
	Title	Corrosion protection of Cu by atomic layer deposition			Type	A1 Journal article
	Year	2019	Publication	Journal of vacuum science and technology: A: vacuum surfaces and films	Abbreviated Journal	J Vac Sci Technol A
	Volume	37	Issue	37	Pages	060902
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Atomic layer deposition (ALD) is a vapor phase technique that is able to deposit uniform, conformal thin films with an excellent thickness control at the atomic scale. 18 nm thick Al2O3 and TiO2 coatings were deposited conformaly and pinhole-free onto micrometer-sized Cu powder, using trimethylaluminum and tetrakis(dimethylamido)titanium(IV), respectively, as a precursor and de-ionized water as a reactant. The capability of the ALD coating to protect the Cu powder against corrosion was investigated. Therefore, the stability of the coatings was studied in solutions with different pH in the range of 0–14, and in situ raman spectroscopy was used to detect the emergence of corrosion products of Cu as an indication that the protective coating starts to fail. Both ALD coatings provide good protection at standard pH values in the range of 5–7. In general, the TiO2 coating shows a better barrier protection against corrosion than the Al2O3 coating. However, for the most extreme pH conditions, pH 0 and pH 14, the TiO2 coating starts also to degrade.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000517925800003	Publication Date	2019-09-19
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0734-2101	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.374	Times cited	7	Open Access	OpenAccess
	Notes	The authors acknowledge financial support from the Strategic Initiative Materials in Flanders (SIM, SBO-FUNC project) and the Special Research Fund BOF of Ghent University (No. GOA 01G01513). J.D. acknowledges the Research Foundation Flanders (FWO-Vlaanderen) for a postdoctoral fellowship.			Approved	Most recent IF: 1.374
	Call Number	EMAT @ emat @c:irua:162640			Serial	5361
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	Author	Sharp, J.; Mueller, I.C.; Mandal, P.; Abbas, A.; Nord, M.; Doye, A.; Ehiasarian, A.; Hovsepian, P.; MacLaren, I.; Rainforth, W.M.
	Title	Characterisation of a high-power impulse magnetron sputtered C/Mo/W wear resistant coating by transmission electron microscopy			Type	A1 Journal article
	Year	2019	Publication	Surface and coatings technology	Abbreviated Journal	Surf Coat Tech
	Volume	377	Issue	377	Pages	124853
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Thin films of C/Mo/W deposited using combined UBM/HIPIMS sputtering show 2-8 nm clusters of material richer in Mo and W than the matrix (found by EDS microanalysis), with structures that resemble graphitic onions with the metal atoms arranged regularly within them. EELS microanalysis showed the clusters to be rich in W and Mo. As the time averaged power used in the pulsed HIPIMS magnetron was increased, the clusters became more defined, larger, and arranged into layers with amorphous matrix between them. Films deposited with average HIPIMS powers of 4 kW and 6 kW also showed a periodic modulation of the cluster density within the finer layers giving secondary, wider stripes in TEM. By analysing the ratio between the finer and coarser layers, it was found that this meta-layering is related to the substrate rotation in the deposition chamber but in a non-straightforward way. Reasons for this are proposed. The detailed structure of the clusters remains unknown and is the subject of further work. Fluctuation electron microscopy results indicated the presence of crystal planes with the graphite interlayer spacing, crystal planes in hexagonal WC perpendicular to the basal plane, and some plane spacings found in Mo2C. Other peaks in the FEM results suggested symmetry-related starting points for future determination of the structure of the clusters.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000488417800015	Publication Date	2019-08-03
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0257-8972	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.589	Times cited	1	Open Access
	Notes	; J.S. thanks the Mercury Centre at the University of Sheffield for funding, which was part funded by the ERDF under grant MERCURY 904467. I.C.M. acknowledges support from CONACyT and RobertoRocca Education Fellowship. We gratefully acknowledge funding from EPSRC for the pixelated STEM detector and the software used in its operation for the fluctuation microscopy (EP/M009963/ 1, EP/K503903/1 & EP/R511705/1). AD was supported by the EPSRC CDT in Integrative Sensing and Measurement, Grant Number EP/L016753/1. Funding sources did not influence the planning or execution of this work except to enable it. ;			Approved	Most recent IF: 2.589
	Call Number	UA @ admin @ c:irua:163700			Serial	5383
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	Author	van Cleempoel, A.; Joutsensaari, J.; Kauppinen, E.; Gijbels, R.; Claeys, M.
	Title	Aerosol synthesis and characterization of ultrafine fullerene particles			Type	A1 Journal article
	Year	1998	Publication	Fullerene science and technology	Abbreviated Journal	Fullerene Sci Techn
	Volume	6	Issue	4	Pages	599-627
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	000074859200001	Publication Date	2008-04-23
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1064-122X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	3	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:24038			Serial	78
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	Author	Bultinck, E.; Bogaerts, A.
	Title	Characterization of an Ar/O₂ magnetron plasma by a multi-species Monte Carlo model			Type	A1 Journal article
	Year	2011	Publication	Plasma sources science and technology	Abbreviated Journal	Plasma Sources Sci T
	Volume	20	Issue	4	Pages	045013-045013,12
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	A combined Monte Carlo (MC)/analytical surface model is developed to study the plasma processes occurring during the reactive sputter deposition of TiOx thin films. This model describes the important plasma species with a MC approach (i.e. electrons, Ar+ ions, {\rm O}_2
	Address
	Corporate Author				Thesis
	Publisher	Institute of Physics	Place of Publication	Bristol	Editor
	Language		Wos	000295829800015	Publication Date	2011-06-14
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0963-0252;1361-6595;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.302	Times cited	7	Open Access
	Notes				Approved	Most recent IF: 3.302; 2011 IF: 2.521
	Call Number	UA @ lucian @ c:irua:89732			Serial	316
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	Author	Sankaran, K.; Clima, S.; Mees, M.; Pourtois, G.
	Title	Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations			Type	A1 Journal article
	Year	2015	Publication	ECS journal of solid state science and technology	Abbreviated Journal	Ecs J Solid State Sc
	Volume	4	Issue	4	Pages	N3127-N3133
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	The bulk properties of elementary metals and copper based binary alloys have been investigated using automated first-principles simulations to evaluate their potential to replace copper and tungsten as interconnecting wires in the coming CMOS technology nodes. The intrinsic properties of the screened candidates based on their cohesive energy and on their electronic properties have been used as a metrics to reflect their resistivity and their sensitivity to electromigration. Using these values, the 'performances' of the alloys have been benchmarked with respect to the Cu and W ones. It turns out that for some systems, alloying Cu with another element leads to a reduced tendency to electromigration. This is however done at the expense of a decrease of the conductivity of the alloy with respect to the bulk metal. (C) 2014 The Electrochemical Society. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher	Electrochemical society	Place of Publication	Pennington (N.J.)	Editor
	Language		Wos	000349547900018	Publication Date	2014-11-19
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2162-8769;2162-8777;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.787	Times cited	19	Open Access
	Notes				Approved	Most recent IF: 1.787; 2015 IF: 1.558
	Call Number	c:irua:125296			Serial	1150
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	Author	Bogaerts, A.; Naylor, J.; Hatcher, M.; Jones, W.J.; Mason, R.
	Title	Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge: modeling and comparison with experiment			Type	A1 Journal article
	Year	1998	Publication	Journal of vacuum science and technology: A: vacuum surfaces and films	Abbreviated Journal	J Vac Sci Technol A
	Volume	16	Issue	4	Pages	2400-2410
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000074852700061	Publication Date	2002-07-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0734-2101;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.374	Times cited	12	Open Access
	Notes				Approved	Most recent IF: 1.374; 1998 IF: 1.612
	Call Number	UA @ lucian @ c:irua:24124			Serial	1634
Permanent link to this record



	Author	Saeed, A.; Khan, A.W.; Shafiq, M.; Jan, F.; Abrar, M.; Zaka-ul-Islam, M.; Zakaullah, M.
	Title	Investigation of 50 Hz pulsed DC nitrogen plasma with active screen cage by trace rare gas optical emission spectroscopy			Type	A1 Journal article
	Year	2014	Publication	Plasma science & technology	Abbreviated Journal	Plasma Sci Technol
	Volume	16	Issue	4	Pages	324-328
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	Optical emission spectroscopy is used to investigate the nitrogen-hydrogen with trace rare gas (4% Ar) plasma generated by 50 Hz pulsed DC discharges. The filling pressure varies from 1 mbar to 5 mbar and the current density ranges from 1 mA.cm(-2) to 4 mA.cm(-2). The hydrogen concentration in the mixture plasma varies from 0% to 80%, with the objective of identifying the optimum pressure, current density and hydrogen concentration for active species ([N] and [N-2]) generation. It is observed that in an N-2-H-2 gas mixture, the concentration of N atom density decreases with filling pressure and increases with current density, with other parameters of the discharge kept unchanged. The maximum concentrations of active species were found for 40% H-2 in the mixture at 3 mbar pressure and current density of 4 mA.cm(-2).
	Address
	Corporate Author				Thesis
	Publisher	Institute of Plasma Physics, the Chinese Academy of Sciences	Place of Publication	Beijing	Editor
	Language		Wos	000335909600005	Publication Date	2014-04-29
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1009-0630;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	0.83	Times cited	5	Open Access
	Notes				Approved	Most recent IF: 0.83; 2014 IF: 0.579
	Call Number	UA @ lucian @ c:irua:117686			Serial	1728
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	Author	Zaghi, A.E.; Buffière, M.; Brammertz, G.; Batuk, M.; Lenaers, N.; Kniknie, B.; Hadermann, J.; Meuris, M.; Poortmans, J.; Vleugels, J.
	Title	Mechanical synthesis of high purity Cu-In-Se alloy nanopowder as precursor for printed CISe thin film solar cells			Type	A1 Journal article
	Year	2014	Publication	Advanced powder technology	Abbreviated Journal	Adv Powder Technol
	Volume	25	Issue	4	Pages	1254-1261
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Mechanical alloying and ball milling are low cost, up-scalable techniques for the preparation of high purity chalcogenide nanopowders to be used as precursor material for printing thin film solar cells. In this study, high purity copper indium selenium (Cu-In-Se) alloy nanopowders with 20-200 nm particle size were synthesized from macroscopic elemental Cu, In and Se powders via mechanical alloying and planetary ball milling. The particle size distribution, morphology, composition, and purity level of the synthesized Cu-In-Se alloy nanopowders were investigated. Thin Cu-In-Se alloy nanopowder ink coatings, deposited on Mo-coated glass substrates by doctor blading, were converted into a CuInSe2 semiconductor film by selenization heat treatment in Se vapor. The CuInSe2 film showed semiconducting band gap around 1 eV measured by photoluminescence spectroscopy. CuInSe2 absorber layer based thin film solar cell devices were fabricated to assess their performance. The solar cell device showed a total efficiency of 4.8%, as measured on 0.25 cm(2) area cell. (c) 2014 The Society of Powder Technology Japan. Published by Elsevier B.V. and The Society of Powder Technology Japan. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Zeist	Editor
	Language		Wos	000341871700015	Publication Date	2014-03-17
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-8831;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.659	Times cited	10	Open Access
	Notes				Approved	Most recent IF: 2.659; 2014 IF: 2.638
	Call Number	UA @ lucian @ c:irua:119896			Serial	1977
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	Author	Depla, D.; Chen, Z.Y.; Bogaerts, A.; Ignatova, V.; de Gryse, R.; Gijbels, R.
	Title	Modeling of the target surface modification by reactive ion implantation during magnetron sputtering			Type	A1 Journal article
	Year	2004	Publication	Journal of vacuum science and technology: A: vacuum surfaces and films	Abbreviated Journal	J Vac Sci Technol A
	Volume	22	Issue	4	Pages	1524-1529
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000223322000075	Publication Date	2004-07-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0734-2101;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.374	Times cited	13	Open Access
	Notes				Approved	Most recent IF: 1.374; 2004 IF: 1.557
	Call Number	UA @ lucian @ c:irua:47331			Serial	2137
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	Author	Tinck, S.; Boullart, W.; Bogaerts, A.
	Title	Modeling Cl₂/O₂/Ar inductively coupled plasmas used for silicon etching : effects of SiO₂ chamber wall coating			Type	A1 Journal article
	Year	2011	Publication	Plasma sources science and technology	Abbreviated Journal	Plasma Sources Sci T
	Volume	20	Issue	4	Pages	045012-045012,19
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	In this paper, simulations are performed to gain a better insight into the properties of a Cl2/Ar plasma, with and without O2, during plasma etching of Si. Both plasma and surface properties are calculated in a self-consistent manner. Special attention is paid to the behavior of etch products coming from the wafer or the walls, and how the chamber walls can affect the plasma and the resulting etch process. Two modeling cases are considered. In the first case, the reactor walls are defined as clean (Al2O3), whereas in the second case a SiO2 coating is introduced on the reactor walls before the etching process, so that oxygen will be sputtered from the walls and introduced into the plasma. For this reason, a detailed reaction set is presented for a Cl2/O2/Ar plasma containing etched species, as well as an extensive reaction set for surface processes, including physical and chemical sputtering, chemical etching and deposition processes. Density and flux profiles of various species are presented for a better understanding of the bulk plasma during the etching process. Detailed information is also given on the composition of the surfaces at various locations of the reactor, on the etch products in the plasma and on the surface loss probabilities of the plasma species at the walls, with different compositions. It is found that in the clean chamber, walls are mostly chlorinated (Al2Cl3), with a thin layer of etch products residing on the wall. In the coated chamber, an oxy-chloride layer is grown on the walls for a few nanometers during the etching process. The Cl atom wall loss probability is found to decrease significantly in the coated chamber, hence increasing the etch rate. SiCl2, SiCl4 and SiCl3 are found to be the main etch products in the plasma, with the fraction of SiCl2 being always slightly higher. The simulation results compare well with experimental data available from the literature.
	Address
	Corporate Author				Thesis
	Publisher	Institute of Physics	Place of Publication	Bristol	Editor
	Language		Wos	000295829800014	Publication Date	2011-06-14
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0963-0252;1361-6595;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.302	Times cited	22	Open Access
	Notes				Approved	Most recent IF: 3.302; 2011 IF: 2.521
	Call Number	UA @ lucian @ c:irua:91045			Serial	2141
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	Author	Du, G.; Van Tendeloo, G.
	Title	Preparation and structure analysis of Gd(OH)₃ nanorods			Type	A1 Journal article
	Year	2005	Publication	Nanotechnology	Abbreviated Journal	Nanotechnology
	Volume	16	Issue	4	Pages	595-597
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Bristol	Editor
	Language		Wos	000228949300052	Publication Date	2005-03-02
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0957-4484;1361-6528;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.44	Times cited	28	Open Access
	Notes	Iap V-1			Approved	Most recent IF: 3.44; 2005 IF: 2.993
	Call Number	UA @ lucian @ c:irua:59057			Serial	2700
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	Author	Kozák, T.; Bogaerts, A.
	Title	Splitting of CO₂ by vibrational excitation in non-equilibrium plasmas : a reaction kinetics model			Type	A1 Journal article
	Year	2014	Publication	Plasma sources science and technology	Abbreviated Journal	Plasma Sources Sci T
	Volume	23	Issue	4	Pages	045004
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	We present a zero-dimensional kinetic model of CO2 splitting in non-equilibrium plasmas. The model includes a description of the CO2 vibrational kinetics (25 vibrational levels up to the dissociation limit of the molecule), taking into account state-specific VT and VV relaxation reactions and the effect of vibrational excitation on other chemical reactions. The model is applied to study the reaction kinetics of CO2 splitting in an atmospheric-pressure dielectric barrier discharge (DBD) and in a moderate-pressure microwave discharge. The model results are in qualitative agreement with published experimental works. We show that the CO2 conversion and its energy efficiency are very different in these two types of discharges, which reflects the important dissociation mechanisms involved. In the microwave discharge, excitation of the vibrational levels promotes efficient dissociation when the specific energy input is higher than a critical value (2.0 eV/molecule under the conditions examined). The calculated energy efficiency of the process has a maximum of 23%. In the DBD, vibrationally excited levels do not contribute significantly to the dissociation of CO2 and the calculated energy efficiency of the process is much lower (5%).
	Address
	Corporate Author				Thesis
	Publisher	Institute of Physics	Place of Publication	Bristol	Editor
	Language		Wos	000345761500014	Publication Date	2014-06-17
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0963-0252;1361-6595;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.302	Times cited	170	Open Access
	Notes				Approved	Most recent IF: 3.302; 2014 IF: 3.591
	Call Number	UA @ lucian @ c:irua:117398			Serial	3108
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	Author	Van Havenbergh, K.; Turner, S.; Marx, N.; Van Tendeloo, G.
	Title	The mechanical behavior during (de)lithiation of coated silicon nanoparticles as anode material for lithium-ion batteries studied by InSitu transmission electron microscopy			Type	A1 Journal article
	Year	2016	Publication	Energy technology	Abbreviated Journal	Energy Technol-Ger
	Volume	4	Issue	4	Pages	1005-1012
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	One approach to cope with the continuous irreversible capacity loss in Si-based electrodes, attributed to lithiation-induced volume changes and the formation of a solid-electrolyte interface (SEI), is by coating silicon nanoparticles. A coating can improve the conductivity of the electrode, form a chemical shield against the electrolyte, or provide mechanical confinement to reduce the volume increase. The influence of such a coating on the mechanical behavior of silicon nanoparticles during Li insertion and Li extraction was investigated by insitu transmission electron microscopy. The type of coating was shown to influence the size of the unreacted core that remains after reaction of silicon with lithium. Furthermore, two mechanisms to relieve the stress generated during volume expansion are reported: the initiation of cracks and the formation of nanovoids. Both result in a full reaction of the silicon nanoparticles, whereas with the formation of cracks, additional surface area is created, on which an SEI can be formed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000382549500012	Publication Date	2016-06-29
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2194-4296; 2194-4288	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.789	Times cited	6	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:137167			Serial	4406
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	Author	Pahlke, P.; Sieger, M.; Ottolinger, R.; Lao, M.; Eisterer, M.; Meledin, A.; Van Tendeloo, G.; Haenisch, J.; Holzapfel, B.; Schultz, L.; Nielsch, K.; Huehne, R.
	Title	Influence of artificial pinning centers on structural and superconducting properties of thick YBCO films on ABAD-YSZ templates			Type	A1 Journal article
	Year	2018	Publication	Superconductor science and technology	Abbreviated Journal	Supercond Sci Tech
	Volume	31	Issue	4	Pages	044007
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Recent efforts in the development of YBa2Cu3O7-x (YBCO) coated conductors are devoted to the increase of the critical current I-c in magnetic fields. This is typically realized by growing thicker YBCO layers as well as by the incorporation of artificial pinning centers. We studied the growth of doped YBCO layers with a thickness of up to 7 mu m using pulsed laser deposition with a growth rate of about 1.2 nm s(-1). Industrially fabricated ion-beam textured YSZ templates based on metal tapes were used as substrates for this study. The incorporation of BaHfO3 (BHO) or Ba2Y(Nb0.5Ta0.5)O-6 (BYNTO) secondary phase additions leads to a denser microstructure compared to undoped films. A purely c-axis-oriented YBCO growth is preserved up to a thickness of about 4 mu m, whereas misoriented texture components were observed in thicker films. The critical temperature is slightly reduced compared to undoped films and independent of film thickness. The critical current density J(c) of the BHO- and BYNTO-doped YBCO layers is lower at 77 K and self-field compared to pure YBCO layers; however, I-c increases up to a thickness of 5 mu m. A comparison between films with a thickness of 1.3 mu m revealed that the anisotropy of the critical current density J(c)(theta) strongly depends on the incorporated pinning centers. Whereas BHO nanorods lead to a strong B vertical bar vertical bar c-axis peak, the overall anisotropy is significantly reduced by the incorporation of BYNTO forming a mixture of short c-axis-oriented nanorods and small (a-b)-oriented platelets. As a result, the J(c) values of the doped films outperform the undoped samples at higher fields and lower temperatures for most magnetic field directions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Bristol	Editor
	Language		Wos	000442196400001	Publication Date	2018-02-15
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-2048	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.878	Times cited	9	Open Access	OpenAccess
	Notes	; The authors acknowledge financial support from EURO-TAPES, a collaborative project funded by the European Union's Seventh Framework Programme (FP7/ 2007-2013) under Grant Agreement no. 280432. We thank A Usoskin (Bruker HTS GmbH, Germany) for the provision of buffered templates, and M Bianchetti, A Kursumovic and J L Mac-Manus-Driscoll (University of Cambridge, UK) for the supply of BYNTO targets. The authors also gratefully acknowledge the technical assistance of J Scheiter, M Kuhnel, U Besold (IFW) and R Nast (KIT). ;			Approved	Most recent IF: 2.878
	Call Number	UA @ lucian @ c:irua:153775			Serial	5108
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	Author	Dhayalan, S.K.; Nuytten, T.; Pourtois, G.; Simoen, E.; Pezzoli, F.; Cinquanta, E.; Bonera, E.; Loo, R.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Vandervorst, W.
	Title	Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers			Type	A1 Journal article
	Year	2019	Publication	ECS journal of solid state science and technology	Abbreviated Journal	Ecs J Solid State Sc
	Volume	8	Issue	4	Pages	P209-P216
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	Si:C and Si:C:P alloys are potential candidates for source-drain stressor applications in n-type Fin Field Effect Transistors (FinFETs). Increasing the C content to achieve high strain results in the arrangement of C atoms as third nearest neighbors (3nn) in the Si: C lattice. During thermal annealing, the presence of C atoms as 3nn may promote clustering at the interstitial sites, causing loss of stress. The concentration of C atoms as 3nn is reduced by the incorporation of a small amount of Ge atoms during the growth, whereas in-situ P doping does not influence this 3nn distribution [J Solid State Sci. Technol vol 6, p 755, 2017]. Small amounts of Ge are provided during low temperature selective epitaxial growth scheme, which are based on cyclic deposition and etching (CDE). In this work, we aim to provide physical insights into the aforementioned phenomena, to understand the behavior of 3nn C atoms and the types of defects that are formed in the annealed Si: C films. Using ab-initio simulations, the Ge-C interaction in the Si matrix is investigated and this insight is used to explain how the Ge incorporation leads to a reduced 3nn distribution of the C atoms. The interaction between C and P in the Si: C: P films is also investigated to explain why the P incorporation has not led to a reduction in the 3nn distribution. We then report on the Raman characterization of Si: C layers subjected to post epi annealing. As the penetration depth of the laser is dependent on the wavelength, Raman measurements at two different wavelengths enable us to probe the depth distribution of 3nn C atoms after applying different annealing conditions. We observed a homogeneous loss in 3nn C throughout the layer. Whereas in the kinematic modeling of high resolution X-ray diffraction spectra, a gradient in the substitutional C loss was observed close to the epitaxial layer/substrate interface. This gradient can be due to the out diffusion of C atoms into the Si substrate or to the formation of interstitial C clusters, which cannot be distinguished in HR-XRD. Deep Level Transient Spectroscopy indicated that the prominent out-diffusing species was interstitial CO complex while the interstitial C defects were also prevalent in the epi layer. (c) 2019 The Electrochemical Society.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000465069200001	Publication Date	2019-04-18
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2162-8769; 2162-8777	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor	1.787	Times cited		Open Access	Not_Open_Access
	Notes				Approved	Most recent IF: 1.787
	Call Number	UA @ admin @ c:irua:160399			Serial	5275
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	Author	Tytgat, T.; Smits, M.; Lenaerts, S.; Verbruggen, S.W.
	Title	Immobilization of TiO₂ into self-supporting photocatalytic foam : influence of calcination temperature			Type	A1 Journal article
	Year	2014	Publication	International journal of applied ceramic technology	Abbreviated Journal	Int J Appl Ceram Tec
	Volume	11	Issue	4	Pages	714-722
	Keywords	A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
	Abstract	Immobilization of photocatalytic powder is crucial to obtain industrially relevant purification processes. To achieve this goal, self-supporting TiO2 foams were manufactured by a polyacrylamide gel process. These gels were calcined at different temperatures to study the effect of the calcination temperature on foam characteristics (rigidity, crystallinity, and porosity) and its influence on photocatalytic activity. The results show that an optimal degradation is achieved for those foams calcined between 700 and 800°C. Calcination at higher temperatures results in a steep decrease in activity, explained by stability issues of the material due to formation of Na2SO4 phases and a larger rutile fraction.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000339051500012	Publication Date	2013-04-24
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1546-542x	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.048	Times cited	2	Open Access
	Notes	; This work was supported by a PhD grant from the Institute of Innovation by Science and Technology in Flanders (IWT). ;			Approved	Most recent IF: 1.048; 2014 IF: 1.320
	Call Number	UA @ admin @ c:irua:117295			Serial	5960
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	Author	van ‘t Veer, K.; Reniers, F.; Bogaerts, A.
	Title	Zero-dimensional modeling of unpacked and packed bed dielectric barrier discharges: the role of vibrational kinetics in ammonia synthesis			Type	A1 Journal article
	Year	2020	Publication	Plasma Sources Science & Technology	Abbreviated Journal	Plasma Sources Sci T
	Volume	29	Issue	4	Pages	045020
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	We present a zero-dimensional plasma kinetics model, including both surface and gas phase kinetics, to determine the role of vibrationally excited states in plasma-catalytic ammonia synthesis. We defined a new method to systematically capture the conditions of dielectric barrier discharges (DBDs), including those found in packed bed DBDs. We included the spatial and temporal nature of such discharges by special consideration of the number of micro-discharges in the model. We introduce a parameter that assigns only a part of the plasma power to the microdischarges, to scale the model conditions from filamentary to uniform plasma. Because of the spatial and temporal behaviour of the micro-discharges, not all micro-discharges occurring in the plasma reactor during a certain gas residence time are affecting the molecules. The fraction of power considered in the model ranges from 0.005 %, for filamentary plasma, to 100 %, for uniform plasma. If vibrational excitation is included in the plasma chemistry, these different conditions, however, yield an ammonia density that is only varying within one order of magnitude. At only 0.05 % of the power put into the uniform plasma component, a model neglecting vibrational excitation clearly does not result in adequate amounts of ammonia. Thus, our new model, which accounts for the concept in which not all the power is deposited by the micro-discharges, but some part may also be distributed in between them, suggests that vibrational kinetic processes are really important in (packed bed) DBDs. Indeed, vibrational excitation takes place in both the uniform plasma between the micro-discharges and in the strong micro-discharges, and is responsible for an increased N2 dissociation rate. This is shown here for plasma-catalytic ammonia synthesis, but might also be valid for other gas conversion applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000570241500001	Publication Date	2020-04-09
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1361-6595	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.8	Times cited		Open Access
	Notes	This research was supported by the Excellence of Science FWO-FNRS project (FWO grant ID GoF9618n, EOS ID 30505023). The calculations were performed using the Turing HPC infrastructure at the CalcUA core facility of the Universiteit Antwerpen (UAntwerpen), a division of the Flemish Supercomputer Center VSC, funded by the Hercules Foundation, the Flemish Government (department EWI) and the UAntwerpen. The authors would also like to thank Dr. Fatme Jardali for the discussions on plasma kinetic modelling and Dr. Jungmi Hong and Dr. Anthony B. Murphy for their aid in the calculation of the diffusion coefficients.			Approved	Most recent IF: 3.8; 2020 IF: 3.302
	Call Number	PLASMANT @ plasmant @c:irua:168097			Serial	6359
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	Author	Zhang, H.; Zhang, H.; Trenchev, G.; Li, X.; Wu, Y.; Bogaerts, A.
	Title	Multi-dimensional modelling of a magnetically stabilized gliding arc plasma in argon and CO₂			Type	A1 Journal article
	Year	2020	Publication	Plasma Sources Science & Technology	Abbreviated Journal	Plasma Sources Sci T
	Volume	29	Issue	4	Pages	045019
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	This study focuses on a magnetically stabilized gliding arc (MGA) plasma. Two fully coupled ﬂow-plasma models (in 3D and 2D) are presented. The 3D model is applied to compare the arc dynamics of the MGA with a traditional gas-driven gliding arc. The 2D model is used for a detailed parametric study on the effect of the external magnetic ﬁeld. The results show that the relative velocity between the plasma and feed gas is generated due to the Lorentz force, which can increase the plasma-treated gas fraction. The magnetic ﬁeld also helps to decrease the gas temperature by enhancing heat transfer and to increase the electron number density. This work shows the potential of an external magnetic ﬁeld to control the gliding arc behavior, for enhanced gas conversion at low gas ﬂow rates.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000570241800001	Publication Date	2020-04-09
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1361-6595	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.8	Times cited		Open Access
	Notes	Fonds Wetenschappelijk Onderzoek, G.0383.16N ; National Natural Science Foundation of China, 51706204 51707144 ; State Key Laboratory of Electrical Insulation and Power Equipment, EIPE19302 ; The authors acknowledge ﬁnancial support from the Fund for Scientiﬁc Research—Flanders (FWO; Grant G.0383.16 N), National Natural Science Foundation of China under Grant Nos. 51706204, 51707144, and State Key Laboratory of Electrical Insulation and Power Equipment (EIPE19302). The calculations were performed using the Turing HPC infrastructure at the CalcUA core facility of Universiteit Antwerpen, a division of the Flemish Supercomputer Center VSC, funded by the Hercules Foundation, the Flemish Government (Department EWI), and Universiteit Antwerpen. Finally, Hantian Zhang acknowledges ﬁnancial support from the China Scholarship Council.			Approved	Most recent IF: 3.8; 2020 IF: 3.302
	Call Number	PLASMANT @ plasmant @c:irua:169218			Serial	6360
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	Author	Celentano, G.; Rizzo, F.; Augieri, A.; Mancini, A.; Pinto, V.; Rufoloni, A.; Vannozzi, A.; MacManus-Driscoll, J.L.; Feighan, J.; Kursumovic, A.; Meledin, A.; Mayer, J.; Van Tendeloo, G.
	Title	YBa₂Cu₃O_7−xfilms with Ba₂Y(Nb,Ta)O₆nanoinclusions for high-field applications			Type	A1 Journal article
	Year	2020	Publication	Superconductor Science & Technology	Abbreviated Journal	Supercond Sci Tech
	Volume	33	Issue	4	Pages	044010
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The structural and transport properties of YBa2Cu3O7−x films grown by pulsed laser deposition with mixed 2.5 mol% Ba2YTaO6 (BYTO) and 2.5 mol% Ba2YNbO6 (BYNO) double-perovskite secondary phases are investigated in an extended film growth rate, R = 0.02–1.8 nm s−1. The effect of R on the film microstructure analyzed by TEM techniques shows an evolution from sparse and straight to denser, thinner and splayed continuous columns, with mixed BYNO + BYTO (BYNTO) composition, as R increases from 0.02 nm s−1 to 1.2 nm s−1. This microstructure results in very efficient flux pinning at 77 K, leading to a remarkable improvement in the critical current density (J c) behaviour, with the maximum pinning force density F p(Max) = 13.5 GN m−3 and the irreversibility field in excess of 11 T. In this range, the magnetic field values at which the F p is maximized varies from 1 T to 5 T, being related to the BYNTO columnar density. The film deposited when R = 0.3 nm s−1 exhibits the best performances over the whole temperature and magnetic field ranges, achieving F p(Max) = 900 GN m−3 at 10 K and 12 T. At higher rates, R > 1.2 nm s−1, BYNTO columns show a meandering nature and are prone to form short nanorods. In addition, in the YBCO film matrix a more disordered structure with a high density of short stacking faults is observed. From the analysis of the F p(H, T) curves it emerges that in films deposited at the high R limit, the vortex pinning is no longer dominated by BYNTO columnar defects, but by a new mechanism showing the typical temperature scaling law. Even though this microstructure produces a limited improvement at 77 K, it exhibits a strong J c improvement at lower temperature with F p = 700 GN m−3 at 10 K, 12 T and 900 GN m−3 at 4.2 K, 18 T.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000525650500001	Publication Date	2020-04-01
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-2048	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.6	Times cited		Open Access	OpenAccess
	Notes	This work was partially financially supported by EUROTAPES, a collaborative project funded by the European Commission’s Seventh Framework Program (FP7/2007–2013) under Grant Agreement No. 280432. This work has been partially carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom programme 2014-2018 and 2019-2020 under grant agreement N° 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 823717 – ESTEEM3 (Nano-engineered YBCO Superconducting Tapes for High Field Applications, NESTApp). G. C. acknowledges the support of Michele De Angelis for XRD measurements and calculations.			Approved	Most recent IF: 3.6; 2020 IF: 2.878
	Call Number	UA @ lucian @c:irua:168582			Serial	6394
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	Author	Vohra, A.; Makkonen, I.; Pourtois, G.; Slotte, J.; Porret, C.; Rosseel, E.; Khanam, A.; Tirrito, M.; Douhard, B.; Loo, R.; Vandervorst, W.
	Title	Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge_1-xSn_x and Si_yGe_1-x-ySn_x			Type	A1 Journal article
	Year	2020	Publication	Ecs Journal Of Solid State Science And Technology	Abbreviated Journal	Ecs J Solid State Sc
	Volume	9	Issue	4	Pages	044010-44012
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	This paper benchmarks various epitaxial growth schemes based on n-type group-IV materials as viable source/drain candidates for Ge nMOS devices. Si:P grown at low temperature on Ge, gives an active carrier concentration as high as 3.5 x 10(20) cm(-3) and a contact resistivity down to 7.5 x 10(-9) Omega.cm(2). However, Si:P growth is highly defective due to large lattice mismatch between Si and Ge. Within the material stacks assessed, one option for Ge nMOS source/drain stressors would be to stack Si:P, deposited at contact level, on top of a selectively grown n-SiyGe1-x-ySnx at source/drain level, in line with the concept of Si passivation of n-Ge surfaces to achieve low contact resistivities as reported in literature (Martens et al. 2011 Appl. Phys. Lett., 98, 013 504). The saturation in active carrier concentration with increasing P (or As)-doping is the major bottleneck in achieving low contact resistivities for as-grown Ge or SiyGe1-x-ySnx. We focus on understanding various dopant deactivation mechanisms in P-doped Ge and Ge1-xSnx alloys. First principles simulation results suggest that P deactivation in Ge and Ge1-xSnx can be explained both by P-clustering and donor-vacancy complexes. Positron annihilation spectroscopy analysis, suggests that dopant deactivation in P-doped Ge and Ge1-xSnx is primarily due to the formation of P-n-V and SnmPn-V clusters. (C) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000531473500002	Publication Date	2020-04-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2162-8769; 2162-8777	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.2	Times cited		Open Access
	Notes	; The imec core CMOS program members, European Commission, the TAKEMI5 ECSEL project, local authorities and the imec pilot line are acknowledged for their support. Air Liquide Advanced Materials is acknowledged for providing advanced precursor gases. A. V. acknowledges his long stay abroad grant and a grant for participation in congress abroad from the Research Foundation-Flanders (Application No. V410518N and K159219N). I. M. acknowledges financial support from Academy of Finland (Project Nos. 285 809, 293 932 and 319 178). CSC-IT Center for Science, Finland is acknowledged for providing the computational resources. ;			Approved	Most recent IF: 2.2; 2020 IF: 1.787
	Call Number	UA @ admin @ c:irua:169502			Serial	6607
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	Author	Herzog, M.J.; Gauquelin, N.; Esken, D.; Verbeeck, J.; Janek, J.
	Title	Facile dry coating method of high-nickel cathode material by nanostructured fumed alumina (Al2O3) improving the performance of lithium-ion batteries			Type	A1 Journal article
	Year	2021	Publication	Energy technology	Abbreviated Journal
	Volume	9	Issue	4	Pages	2100028
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Surface coating is a crucial method to mitigate the aging problem of high-Ni cathode active materials (CAMs). By avoiding the direct contact of the CAM and the electrolyte, side reactions are hindered. Commonly used techniques like wet or ALD coating are time consuming and costly. Therefore, a more cost-effective coating technique is desirable. Herein, a facile and fast dry powder coating process for CAMs with nanostructured fumed metal oxides are reported. As the model case, the coating of high-Ni NMC (LiNi0.7Mn0.15Co0.15O2) by nanostructured fumed Al2O3 is investigated. A high coverage of the CAM surface with an almost continuous coating layer is achieved, still showing some porosity. Electrochemical evaluation shows a significant increase in capacity retention, cycle life and rate performance of the coated NMC material. The coating layer protects the surface of the CAM successfully and prevents side reactions, resulting in reduced solid electrolyte interface (SEI) formation and charge transfer impedance during cycling. A mechanism on how the coating layer enhances the cycling performance is hypothesized. The stable coating layer effectively prevents crack formation and particle disintegration of the NMC. In depth analysis indicates partial formation of LixAl2O3/LiAlO2 in the coating layer during cycling, enhancing lithium ion diffusivity and thus, also the rate performance.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000621000700001	Publication Date	2021-01-23
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2194-4296; 2194-4288	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	25	Open Access	OpenAccess
	Notes	The authors would like to thank Erik Peldszus and Steve Rienecker for the support with scanning electron microscopy and X-ray photoelectron spectroscopy analysis. The Qu-Ant-EM microscope and the direct electron detector were partly funded by the Hercules fund from the Flemish Government. N.G. and J.V. acknowledge funding from GOA project “Solarpaint” of the University of Antwerp. Funding from the Flemish Research Fund (FWO) project G0F1320N is acknowledged.; Open access funding enabled and organized by Projekt DEAL.			Approved	Most recent IF: NA
	Call Number	UA @ admin @ c:irua:176670			Serial	6724
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	Author	Saha, S.; Badhe, N.; Seuntjens, D.; Vlaeminck, S.E.; Biswas, R.; Nandy, T.
	Title	Effective carbon and nutrient treatment solutions for mixed domestic-industrial wastewater in India			Type	A1 Journal article
	Year	2015	Publication	Water science and technology	Abbreviated Journal
	Volume	72	Issue	4	Pages	651-657
	Keywords	A1 Journal article; Sustainable Energy, Air and Water Technology (DuEL)
	Abstract	The present study evaluates effectiveness of up-flow anaerobic sludge blanket (UASB) reactor followed by two post-anaerobic treatment options, namely free-surface, up-flow constructed wetland (FUP-CW) and oxygen-limited anaerobic nitrification/denitrification (OLAND) processes in treating sewage from the peri-urban areas in India receiving illegal industrial infiltrations. The UASB studies yielded robust results towards fluctuating strength of sewage and consistently removed 87-98% chemical oxygen demand (COD) at a hydraulic retention time of 1.5-2 d. The FUP-CW removed 68.5 +/- 13% COD, 68 +/- 3% NH4+-N, 38 +/- 5% PO43--P, 97.6 +/- 5% suspended particles and 97 +/- 13% fecal coliforms. Nutrient removal was found to be limiting in FUP-CW, especially in winter. Nitrogen removal in the OLAND process were 100 times higher than the FUP-CW process. Results show that UASB followed by FUP-CW can be an excellent, decentralized sewage treatment option, except during winter when nutrient removal is limited in FUP-CW. Hence, the study proposes bio-augmentation of FUP-CW with OLAND biomass for overall improvement in the performance of UASB followed by FUP-CW process.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000359387200019	Publication Date	2015-08-06
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0273-1223; 1996-9732	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ admin @ c:irua:127775			Serial	7840
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