Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Peelaers, H.; Hernández-Nieves, A.D.; Leenaerts, O.; Partoens, B.; Peeters, F.M. |
Vibrational properties of graphene fluoride and graphane |
2011 |
Applied physics letters |
98 |
66 |
UA library record; WoS full record; WoS citing articles |
Milošević, M.V.; Peeters, F.M. |
Vortex manipulation in a superconducting matrix with view on applications |
2010 |
Applied physics letters |
96 |
14 |
UA library record; WoS full record; WoS citing articles |
Masir, M.R.; Vasilopoulos, P.; Peeters, F.M. |
Wavevector filtering through single-layer and bilayer graphene with magnetic barrier structures |
2008 |
Applied physics letters |
93 |
91 |
UA library record; WoS full record; WoS citing articles |
Bals, S.; Van Tendeloo, G.; Salluzzo, M.; Maggio-Aprile, I. |
Why are sputter deposited Nd1+xBa2-xCu3O7-\delta thin films flatter than NdBa2Cu3O7-\delta films? |
2001 |
Applied physics letters |
79 |
13 |
UA library record; WoS full record; WoS citing articles |
Kálna, K.; Mo×ko, M.; Peeters, F.M. |
Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering |
1996 |
Applied physics letters |
68 |
10 |
UA library record; WoS full record; WoS citing articles |
Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Verhoeven, M.A.J.; Rijnders, A.J.H.M.; Blank, D.H.A.; Rogalia, H. |
Ga segregation in DyBa2Cu3O7-\delta/PrBa2Cu3-xGaxO7-\delta/DyBa2Cu3O7-\delta ramp-type Josephson junctions |
1997 |
Applied physics letters |
70 |
8 |
UA library record; WoS full record; WoS citing articles |
Kastalsky, A.; Peeters, F.M.; Chan, W.K.; Florez, L.T.; Harbison, J.P. |
Nonlinear transport phenomena in a triangular quantum well |
1991 |
Applied physics letters |
59 |
11 |
UA library record; WoS full record; WoS citing articles |
Homm, P.; Dillemans, L.; Menghini, M.; Van Bilzen, B.; Bakalov, P.; Su, C.Y.; Lieten, R.; Houssa, M.; Nasr Esfahani, D.; Covaci, L.; Peeters, F.M.; Seo, J.W.; Locquet, J.P.; |
Collapse of the low temperature insulating state in Cr-doped V2O3 thin films |
2015 |
Applied physics letters |
107 |
14 |
UA library record; WoS full record; WoS citing articles |
Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. |
Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors |
2016 |
Applied physics letters |
108 |
13 |
UA library record; WoS full record; WoS citing articles |
Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; |
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films |
2016 |
Applied physics letters |
108 |
9 |
UA library record; WoS full record; WoS citing articles |
Balasubramaniam, Y.; Pobedinskas, P.; Janssens, S.D.; Sakr, G.; Jomard, F.; Turner, S.; Lu, Y.G.; Dexters, W.; Soltani, A.; Verbeeck, J.; Barjon, J.; Nesládek, M.; Haenen, K.; |
Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond |
2016 |
Applied physics letters |
109 |
20 |
UA library record; WoS full record; WoS citing articles |
Milovanović, S.P.; Peeters, F.M. |
Strain controlled valley filtering in multi-terminal graphene structures |
2016 |
Applied physics letters |
109 |
50 |
UA library record; WoS full record; WoS citing articles |
Leenaerts, O.; Vercauteren, S.; Partoens, B. |
Band alignment of lateral two-dimensional heterostructures with a transverse dipole |
2017 |
Applied physics letters |
110 |
4 |
UA library record; WoS full record; WoS citing articles |
Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. |
Can p-channel tunnel field-effect transistors perform as good as n-channel? |
2014 |
Applied physics letters |
105 |
8 |
UA library record; WoS full record; WoS citing articles |
Lindell, L.; Çakir, D.; Brocks, G.; Fahlman, M.; Braun, S. |
Role of intrinsic molecular dipole in energy level alignment at organic interfaces |
2013 |
Applied Physics Letters |
102 |
22 |
UA library record; WoS full record; WoS citing articles |
Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. |
Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study |
2016 |
Applied physics letters |
108 |
4 |
UA library record; WoS full record; WoS citing articles |
Volodin, A.; Van Haesendonck, C.; Leenaerts, O.; Partoens, B.; Peeters, F.M. |
Stress dependence of the suspended graphene work function : vacuum Kelvin probe force microscopy and density functional theory |
2017 |
Applied physics letters |
110 |
8 |
UA library record; WoS full record; WoS citing articles |
Jones, E.; Cooper, D.; Rouvière, J.-L.; Béché, A.; Azize, M.; Palacios, T.; Gradecak, S. |
Towards rapid nanoscale measurement of strain in III-nitride heterostructures |
2013 |
Applied Physics Letters |
103 |
6 |
UA library record; WoS full record; WoS citing articles |
Cooper, D.; Rouvière, J.-L.; Béché, A.; Kadkhodazadeh, S.; Semenova, E.S.; Dunin-Borkowsk, R. |
Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography |
2011 |
Applied physics letters |
99 |
26 |
UA library record; WoS full record; WoS citing articles |
Cooper, D.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy |
2012 |
Applied Physics Letters |
100 |
|
UA library record; WoS full record; WoS citing articles |
Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy |
2012 |
Applied Physics Letters |
112 |
14 |
UA library record; WoS full record; WoS citing articles |
Rouvière, J.-L.; Béché, A.; Martin, Y.; Denneulin, T.; Cooper, D. |
Improved strain precision with high spatial resolution using nanobeam precession electron diffraction |
2013 |
Applied physics letters |
103 |
53 |
UA library record; WoS full record; WoS citing articles |
Milovanović, S.P.; Tadic, M.Z.; Peeters, F.M. |
Graphene membrane as a pressure gauge |
2017 |
Applied physics letters |
111 |
11 |
UA library record; WoS full record; WoS citing articles |
Zhou, Y.; Ramaneti, R.; Anaya, J.; Korneychuk, S.; Derluyn, J.; Sun, H.; Pomeroy, J.; Verbeeck, J.; Haenen, K.; Kuball, M. |
Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs |
2017 |
Applied physics letters |
111 |
78 |
UA library record; WoS full record; WoS citing articles |
Abdullah, H.M.; Van der Donck, M.; Bahlouli, H.; Peeters, F.M.; Van Duppen, B. |
Graphene quantum blisters : a tunable system to confine charge carriers |
2018 |
Applied physics letters |
112 |
9 |
UA library record; WoS full record; WoS citing articles |
Kong, X.; Li, L.; Peeters, F.M. |
Topological Dirac semimetal phase in <tex> $GexSny alloys |
2018 |
Applied physics letters |
112 |
8 |
UA library record; WoS full record; WoS citing articles |
Li, L.L.; Peeters, F.M. |
Strain engineered linear dichroism and Faraday rotation in few-layer phosphorene |
2019 |
Applied physics letters |
114 |
12 |
UA library record; WoS full record; WoS citing articles |
Zarenia, M.; Conti, S.; Peeters, F.M.; Neilson, D. |
Coulomb drag in strongly coupled quantum wells : temperature dependence of the many-body correlations |
2019 |
Applied physics letters |
115 |
2 |
UA library record; WoS full record; WoS citing articles |
Vanherck, J.; Bacaksiz, C.; Sorée, B.; Milošević, M.V.; Magnus, W. |
2D ferromagnetism at finite temperatures under quantum scrutiny |
2020 |
Applied Physics Letters |
117 |
8 |
UA library record; WoS full record; WoS citing articles |
Li, L.; Kong, X.; Chen, X.; Li, J.; Sanyal, B.; Peeters, F.M. |
Monolayer 1T-LaN₂ : Dirac spin-gapless semiconductor of p-state and Chern insulator with a high Chern number |
2020 |
Applied Physics Letters |
117 |
19 |
UA library record; WoS full record; WoS citing articles |