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Author Berdiyorov, G.R.; Mortazavi, B.; Ahzi, S.; Peeters, F.M.; Khraisheh, M.K.
  Title Effect of straining graphene on nanopore creation using Si cluster bombardment: A reactive atomistic investigation Type A1 Journal article
  Year 2016 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 120 Issue 120 Pages 225108
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract Graphene nanosheets have recently received a revival of interest as a new class of ultrathin, high-flux, and energy-efficient sieving membranes because of their unique two-dimensional and atomically thin structure, good flexibility, and outstanding mechanical properties. However, for practical applications of graphene for advanced water purification and desalination technologies, the creation of well controlled, high-density, and subnanometer diameter pores becomes a key factor. Here, we conduct reactive force-field molecular dynamics simulations to study the effect of external strain on nanopore creation in the suspended graphene by bombardment with Si clusters. Depending on the size and energy of the clusters, different kinds of topography were observed in the graphene sheet. In all the considered conditions, tensile strain results in the creation of nanopores with regular shape and smooth edges. On the contrary, compressive strain increases the elastic response of graphene to irradiation that leads to the formation of net-like defective structures with predominantly carbon atom chains. Our findings show the possibility of creating controlled nanopores in strained graphene by bombardment with Si clusters. Published by AIP Publishing.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000391535900022 Publication Date 2016-12-15
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 10 Open Access
  Notes ; ; Approved Most recent IF: 2.068
  Call Number UA @ lucian @ c:irua:141451 Serial 4554
Permanent link to this record
 

 
Author Mirzakhani, M.; Zarenia, M.; Peeters, F.M.
  Title Edge states in gated bilayer-monolayer graphene ribbons and bilayer domain walls Type A1 Journal article
  Year 2018 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 123 Issue 20 Pages 204301
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract Using the effective continuum model, the electron energy spectrum of gated bilayer graphene with a step-like region of decoupled graphene layers at the edge of the sample is studied. Different types of coupled-decoupled interfaces are considered, i.e., zigzag (ZZ) and armchair junctions, which result in significant different propagating states. Two non-valley-polarized conducting edge states are observed for ZZ type, which are mainly located around the ZZ-ended graphene layers. Additionally, we investigated both BA-BA and BA-AB domain walls in the gated bilayer graphene within the continuum approximation. Unlike the BA-BA domain wall, which exhibits gapped insulating behaviour, the domain walls surrounded by different stackings of bilayer regions feature valley-polarized edge states. Our findings are consistent with other theoretical calculations, such as from the tight-binding model and first-principles calculations, and agree with experimental observations. Published by AIP Publishing.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000433977200017 Publication Date 2018-05-23
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 3 Open Access
  Notes ; This work was supported by the Flemish Science Foundation (FWO), the BOF-UA (Bijzonder Onderzoeks Fonds), the Methusalem program of the Flemish Government, and Iran Nanotechnology Initiative Council (INIC). ; Approved Most recent IF: 2.068
  Call Number UA @ lucian @ c:irua:152044UA @ admin @ c:irua:152044 Serial 5020
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Author Chen, Q.; Wang, W.; Peeters, F.M.
  Title Magneto-polarons in monolayer transition-metal dichalcogenides Type A1 Journal article
  Year 2018 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 123 Issue 21 Pages 214303
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract Landau levels (LLs) are modified by the Frohlich interaction which we investigate within the improved Wigner-Brillouin theory for energies both below and above the longitudinal-optical-continuum in monolayer MoS2.., WS2, MoSe2, and WSe2. Polaron corrections to the LLs are enhanced in monolayer MoS2 as compared to WS2. A series of levels are found at h omega(LO) + lh omega(c), and in addition, the Frohlich interaction lifts the degeneracy between the levels nh omega(c) and h omega(LO) + lh omega(c) resulting in an anticrossing. The screening effect due to the environment plays an important role in the polaron energy corrections, which are also affected by the effective thickness r(eff) parameter. The polaron anticrossing energy gap E-gap decreases with increasing effective thickness r(eff). Published by AIP Publishing.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000434775500014 Publication Date 2018-06-05
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 19 Open Access
  Notes ; Q. Chen and W. Wang acknowledge the financial support from the China Scholarship Council (CSC). This work was also supported by Hunan Provincial Natural Science Foundation of China (Grant No. 2015JJ2040), by the Scientific Research Fund of Hunan Provincial Education Department (Grant No. 15A042), and by the National Natural Science Foundation of China (Grant No. 11404214). ; Approved Most recent IF: 2.068
  Call Number UA @ lucian @ c:irua:151985UA @ admin @ c:irua:151985 Serial 5031
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Author Saberi-Pouya, S.; Vazifehshenas, T.; Saleh, M.; Farmanbar, M.; Salavati-fard, T.
  Title Plasmon modes in monolayer and double-layer black phosphorus under applied uniaxial strain Type A1 Journal article
  Year 2018 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 123 Issue 17 Pages 174301
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract We study the effects of an applied in-plane uniaxial strain on the plasmon dispersions of monolayer, bilayer, and double-layer black phosphorus structures in the long-wavelength limit within the linear elasticity theory. In the low-energy limit, these effects can be modeled through the change in the curvature of the anisotropic energy band along the armchair and zigzag directions. We derive analytical relations of the plasmon modes under uniaxial strain and show that the direction of the applied strain is important. Moreover, we observe that along the armchair direction, the changes of the plasmon dispersion with strain are different and larger than those along the zigzag direction. Using the analytical relations of two-layer phosphorene systems, we found that the strain-dependent orientation factor of layers could be considered as a means to control the variations of the plasmon energy. Furthermore, our study shows that the plasmonic collective modes are more affected when the strain is applied equally to the layers compared to the case in which the strain is applied asymmetrically to the layers. We also calculate the effect of strain on the drag resistivity in a double-layer black phosphorus structure and obtain that the changes in the plasmonic excitations, due to an applied strain, are mainly responsible for the predicted results. This study can be readily extended to other anisotropic two-dimensional materials. Published by AIP Publishing.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000431651600014 Publication Date 2018-05-01
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 4 Open Access
  Notes ; ; Approved Most recent IF: 2.068
  Call Number UA @ lucian @ c:irua:151522UA @ admin @ c:irua:151522 Serial 5037
Permanent link to this record
 

 
Author Beckers, A.; Thewissen, M.; Sorée, B.
  Title Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors Type A1 Journal article
  Year 2018 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 124 Issue 14 Pages 144304
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract This paper investigates energy filtering in silicon nanowires and nanosheets by resonant electron tunneling through a geometric superlattice. A geometric superlattice is any kind of periodic geometric feature along the transport direction of the nanowire or nanosheet. Multivalley quantum-transport simulations are used to demonstrate the manifestation of minibands and minibandgaps in the transmission spectra of such a superlattice. We find that the presence of different valleys in the conduction band of silicon favors a nanowire with a rectangular cross section for effective energy filtering. The obtained energy filter can consequently be used in the source extension of a field-effect transistor to prevent high-energy electrons from contributing to the leakage current. Self-consistent Schrodinger-Poisson simulations in the ballistic limit show minimum subthreshold swings of 6 mV/decade for geometric superlattices with indentations. The obtained theoretical performance metrics for the simulated devices are compared with conventional III-V superlatticeFETs and TunnelFETs. The adaptation of the quantum transmitting boundary method to the finite-element simulation of 3-D structures with anisotropic effective mass is presented in Appendixes A and B. Our results bare relevance in the search for steep-slope transistor alternatives which are compatible with the silicon industry and can overcome the power-consumption bottleneck inherent to standard CMOS technologies. Published by AIP Publishing.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000447148100011 Publication Date 2018-10-11
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 3 Open Access
  Notes ; ; Approved Most recent IF: 2.068
  Call Number UA @ lucian @ c:irua:154729UA @ admin @ c:irua:154729 Serial 5099
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Author Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.L.; Magnus, W.; Sorée, B.; Groeseneken, G.
  Title Phonon-assisted tunneling in direct-bandgap semiconductors Type A1 Journal article
  Year 2019 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 125 Issue 1 Pages 015701
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract In tunnel field-effect transistors, trap-assisted tunneling (TAT) is one of the probable causes for degraded subthreshold swing. The accurate quantum-mechanical (QM) assessment of TAT currents also requires a QM treatment of phonon-assisted tunneling (PAT) currents. Therefore, we present a multi-band PAT current formalism within the framework of the quantum transmitting boundary method. An envelope function approximation is used to construct the electron-phonon coupling terms corresponding to local Frohlich-based phonon-assisted inter-band tunneling in direct-bandgap III-V semiconductors. The PAT current density is studied in up to 100 nm long and 20 nm wide p-n diodes with the 2- and 15-band material description of our formalism. We observe an inefficient electron-phonon coupling across the tunneling junction. We further demonstrate the dependence of PAT currents on the device length, for our non-self-consistent formalism which neglects changes in the electron distribution function caused by the electron-phonon coupling. Finally, we discuss the differences in doping dependence between direct band-to-band tunneling and PAT current. Published under license by AIP Publishing.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000455350200021 Publication Date 2019-01-02
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 2 Open Access
  Notes ; This work was supported by Imec's Industrial Affiliation Program. ; Approved Most recent IF: 2.068
  Call Number UA @ admin @ c:irua:156735 Serial 5224
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Author Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G.
  Title Self-consistent procedure including envelope function normalization for full-zone Schrodinger-Poisson problems with transmitting boundary conditions Type A1 Journal article
  Year 2018 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 124 Issue 20 Pages 204501
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract In the quantum mechanical simulation of exploratory semiconductor devices, continuum methods based on a k.p/envelope function model have the potential to significantly reduce the computational burden compared to prevalent atomistic methods. However, full-zone k.p/envelope function simulation approaches are scarce and existing implementations are not self-consistent with the calculation of the electrostatic potential due to the lack of a stable procedure and a proper normalization of the multi-band envelope functions. Here, we therefore present a self-consistent procedure based on a full-zone spectral k.p/envelope function band structure model. First, we develop a proper normalization for the multi-band envelope functions in the presence of transmitting boundary conditions. This enables the calculation of the free carrier densities. Next, we construct a procedure to obtain self-consistency of the carrier densities with the electrostatic potential. This procedure is stabilized with an adaptive scheme that relies on the solution of Poisson's equation in the Gummel form, combined with successive underrelaxation. Finally, we apply our procedure to homostructure In0.53Ga0.47As tunnel field-effect transistors (TFETs) and staggered heterostructure GaAs0.5Sb0.5/In0.53Ga0.47As TFETs and show the importance of self-consistency on the device predictions for scaled dimensions. Published by AIP Publishing.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000451743900015 Publication Date 2018-11-30
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 1 Open Access
  Notes ; This work was supported by imec's Industrial Affiliation Program. ; Approved Most recent IF: 2.068
  Call Number UA @ admin @ c:irua:156291 Serial 5228
Permanent link to this record
 

 
Author Milovanović, S.P.; Covaci, L.; Peeters, F.M.
  Title Strain fields in graphene induced by nanopillar mesh Type A1 Journal article
  Year 2019 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 125 Issue 8 Pages 082534
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract The mechanical and electronic properties of a graphene membrane placed on top of a triangular superlattice of nanopillars are investigated. We use molecular dynamics simulations to access the deformation fields and the tight-binding approaches to calculate the electronic properties. Ripples form in the graphene layer that span across the unit cell, connecting neighboring pillars, in agreement with recent experiments. We find that the resulting pseudo-magnetic field (PMF) varies strongly across the unit cell. We investigate the dependence of PMF on unit cell boundary conditions, height of the pillars, and the strength of the van der Waals interaction between graphene and the substrate. We find direct correspondence with typical experiments on pillars, showing intrinsic “slack” in the graphene membrane. PMF values are confirmed by the local density of states calculations performed at different positions of the unit cell showing pseudo-Landau levels with varying spacings. Our findings regarding the relaxed membrane configuration and the induced strains are transferable to other flexible 2D membranes.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000460033800038 Publication Date 2019-01-16
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 9 Open Access
  Notes ; S.P.M. is supported by the Flemish Science Foundation (FWO). ; Approved Most recent IF: 2.068
  Call Number UA @ admin @ c:irua:158605 Serial 5231
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Author Gu, J.-G.; Zhang, Y.; Gao, M.-X.; Wang, H.-Y.; Zhang, Q.-Z.; Yi, L.; Jiang, W.
  Title Enhancement of surface discharge in catalyst pores in dielectric barrier discharges Type A1 Journal article
  Year 2019 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 125 Issue 15 Pages 153303
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract The generation of high-density plasmas on the surface of porous catalysts is very important for plasma catalysis, as it determines the active surface of the catalyst that is available for the reaction. In this work, we investigate the mechanism of surface and volume plasma streamer formation and propagation near micro-sized pores in dielectric barrier discharges operating in air at atmospheric pressure. A two-dimensional particle-in-cell/ Monte Carlo collision model is used to model the individual kinetic behavior of plasma species. Our calculations indicate that the surface discharge is enhanced on the surface of the catalyst pores compared with the microdischarge inside the catalyst pores. The reason is that the surface ionization wave induces surface charging along the catalyst pore sidewalls, leading to a strong electric field along the pore sidewalls, which in turn further enhances the surface discharge. Therefore, highly concentrated reactive species occur on the surfaces of the catalyst pores, indicating high-density plasmas on the surface of porous catalysts. Indeed, the maximum electron impact excitation and ionization rates occur on the pore surface, indicating the more pronounced production of excited state and electron-ion pairs on the pore surface than inside the pore, which may profoundly affect the plasma catalytic process. Published under license by AIP Publishing.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000465441200022 Publication Date 2019-04-15
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 4 Open Access Not_Open_Access
  Notes Approved Most recent IF: 2.068
  Call Number UA @ admin @ c:irua:160397 Serial 5273
Permanent link to this record
 

 
Author Chen, Q.; Li, L.L.; Peeters, F.M.
  Title Inner and outer ring states of MoS2 quantum rings : energy spectrum, charge and spin currents Type A1 Journal article
  Year 2019 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 125 Issue 24 Pages 244303
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract We investigate the energy levels and persistent currents of MoS2 quantum rings having different shapes and edge types in the presence of a perpendicular magnetic field by means of the tight-binding approach. We find states localized at the inner and outer boundaries of the ring. These energy levels exhibit different magnetic field dependences for the inner and outer ring states due to their different localization properties. They both exhibit the usual Aharanov-Bohm oscillations but with different oscillation periods. In the presence of spin-orbit coupling, we show distinct spin and charge persistent currents for inner and outer ring states. We find well-defined spin currents with negligibly small charge currents. This is because the local currents of spin-up and -down states flow in opposite directions.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000474439600026 Publication Date 2019-06-25
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 11 Open Access
  Notes ; This work was supported by the Hunan Provincial Natural Science Foundation of China (Nos. 2015JJ2040, 2018JJ2080, and 2018JJ4047), the National Natural Science Foundation of China (NNSFC) (No. 51502087), the Scientific Research Fund of Hunan Provincial Education Department (Nos. 15A042, 15B056, and 17B060), and the Flemish Science Foundation (FWO-VI). ; Approved Most recent IF: 2.068
  Call Number UA @ admin @ c:irua:161309 Serial 5417
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Author Bafekry, A.; Shayesteh, S.F.; Ghergherehchi, M.; Peeters, F.M.
  Title Tuning the bandgap and introducing magnetism into monolayer BC3 by strain/defect engineering and adatom/molecule adsorption Type A1 Journal article
  Year 2019 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 126 Issue 14 Pages 144304
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract Using first-principles calculations, we study the structural, electronic, and optical properties of pristine BC3. Our results show that BC3 is a semiconductor which can be useful in optoelectronic device applications. Furthermore, we found that the electronic properties of BC3 can be modified by strain and the type of edge states. With increasing thickness, the indirect bandgap decreases from 0.7 eV (monolayer) to 0.27 eV (bulk). Upon uniaxial tensile strain along the armchair and zigzag directions, the bandgap slightly decreases, and with increasing uniaxial strain, the bandgap decreases, and when reaching -8%, a semiconductor-to-metal transition occurs. By contrast, under biaxial strain, the bandgap increases to 1.2 eV in +8% and decreases to zero in -8%. BC3 nanoribbons with different widths exhibit magnetism at the zigzag edges, while, at the armchair edges, they become semiconductor, and the bandgap is in the range of 1.0-1.2 eV. Moreover, we systematically investigated the effects of adatoms/molecule adsorption and defects on the structural, electronic, and magnetic properties of BC3. The adsorption of various adatoms and molecules as well as topological defects (vacancies and Stone-Wales defects) can modify the electronic properties. Using these methods, one can tune BC3 into a metal, half-metal, ferromagnetic-metal, and dilute-magnetic semiconductor or preserve its semiconducting character. Published under license by AIP Publishing.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000503995300019 Publication Date 2019-10-10
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 56 Open Access
  Notes Approved Most recent IF: 2.068
  Call Number UA @ admin @ c:irua:165160 Serial 6328
Permanent link to this record
 

 
Author Bafekry, A.; Shayesteh, S.F.; Peeters, F.M.
  Title Two-dimensional carbon nitride (2DCN) nanosheets : tuning of novel electronic and magnetic properties by hydrogenation, atom substitution and defect engineering Type A1 Journal article
  Year 2019 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 126 Issue 21 Pages 215104
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract By employing first-principles calculations within the framework of density functional theory, we investigated the structural, electronic, and magnetic properties of graphene and various two-dimensional carbon-nitride (2DNC) nanosheets. The different 2DCN gives rise to diverse electronic properties such as metals (C3N2), semimetals (C4N and C9N4), half-metals (C4N3), ferromagnetic-metals (C9N7), semiconductors (C2N, C3N, C3N4, C6N6, and C6N8), spin-glass semiconductors (C10N9 and C14N12), and insulators (C2N2). Furthermore, the effects of adsorption and substitution of hydrogen atoms as well as N-vacancy defects on the electronic and magnetic properties are systematically studied. The introduction of point defects, including N vacancies, interstitial H impurity into graphene and different 2DCN crystals, results in very different band structures. Defect engineering leads to the discovery of potentially exotic properties that make 2DCN interesting for future investigations and emerging technological applications with precisely tailored properties. These properties can be useful for applications in various fields such as catalysis, energy storage, nanoelectronic devices, spintronics, optoelectronics, and nanosensors. Published under license by AIP Publishing.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000504007300023 Publication Date 2019-12-02
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 70 Open Access
  Notes Approved Most recent IF: 2.068
  Call Number UA @ admin @ c:irua:165733 Serial 6329
Permanent link to this record
 

 
Author Topalovic, D.B.; Arsoski, V.V.; Tadic, M.Z.; Peeters, F.M.
  Title Asymmetric versus symmetric HgTe/CdxHg1-x Te double quantum wells: Bandgap tuning without electric field Type A1 Journal article
  Year 2020 Publication Journal Of Applied Physics Abbreviated Journal J Appl Phys
  Volume 128 Issue 6 Pages 064301-64308
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract We investigate the electron states in double asymmetric HgTe / Cd x Hg 1 – x Te quantum wells grown along the [ 001 ] direction. The subbands are computed by means of the envelope function approximation applied to the eight-band Kane k . mml:mspace width=“.1em”mml:mspace p model. The asymmetry of the confining potential of the double quantum wells results in a gap opening, which is absent in the symmetric system where it can only be induced by an applied electric field. The bandgap and the subbands are affected by spin-orbit coupling, which is a consequence of the asymmetry of the confining potential. The electron-like and hole-like states are mainly confined in different quantum wells, and the enhanced hybridization between them opens a spin-dependent hybridization gap at a finite in-plane wavevector. We show that both the ratio of the widths of the two quantum wells and the mole fraction of the C d x H g 1 – x Te barrier control both the energy gap between the hole-like states and the hybridization gap. The energy subbands are shown to exhibit inverted ordering, and therefore, a nontrivial topological phase could emerge in the system.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000561339300001 Publication Date 2020-08-10
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.2 Times cited 4 Open Access
  Notes ; This research was funded by the Ministry of Education, Science and Technological Development of the Republic of Serbia and the Flemish Science Foundation (FWO-Vl). ; Approved Most recent IF: 3.2; 2020 IF: 2.068
  Call Number UA @ admin @ c:irua:171146 Serial 6453
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Author Li, Q.N.; Xu, W.; Xiao, Y.M.; Ding, L.; Van Duppen, B.; Peeters, F.M.
  Title Optical absorption window in Na₃Bi based three-dimensional Dirac electronic system Type A1 Journal article
  Year 2020 Publication Journal Of Applied Physics Abbreviated Journal J Appl Phys
  Volume 128 Issue 15 Pages 155707
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract We present a detailed theoretical study of the optoelectronic properties of a Na3Bi based three-dimensional Dirac electronic system (3DDES). The optical conductivity is evaluated using the energy-balance equation derived from a Boltzmann equation, where the electron Hamiltonian is taken from a simplified k . p approach. We find that for short-wavelength irradiation, the optical absorption in Na3Bi is mainly due to inter-band electronic transitions. In contrast to the universal optical conductance observed for graphene, the optical conductivity for Na3Bi based 3DDES depends on the radiation frequency but not on temperature, carrier density, and electronic relaxation time. In the radiation wavelength regime of about 5 mu m, < lambda < 200 mu m, an optical absorption window is found. This is similar to what is observed in graphene. The position and width of the absorption window depend on the direction of the light polarization and sensitively on temperature, carrier density, and electronic relaxation time. Particularly, we demonstrate that the inter-band optical absorption channel can be switched on and off by applying the gate voltage. This implies that similar to graphene, Na3Bi based 3DDES can also be applied in infrared electro-optical modulators. Our theoretical findings are helpful in gaining an in-depth understanding of the basic optoelectronic properties of recently discovered 3DDESs.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000585807400004 Publication Date 2020-10-21
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record
  Impact Factor 3.2 Times cited 1 Open Access
  Notes ; This work was supported by the National Natural Science Foundation of China (NNSFC Nos. U1930116, U1832153, 11764045, 11574319, and 11847054) and the Center of Science and Technology of Hefei Academy of Science (No. 2016FXZY002). Applied Basic Research Foundation of Department of Science and Technology of Yunnan Province (No. 2019FD134), the Department of Education of Yunnan Province (No. 2018JS010), the Young Backbone Teachers Training Program of Yunnan University, and the Department of Science and Technology of Yunnan Province are acknowledged. ; Approved Most recent IF: 3.2; 2020 IF: 2.068
  Call Number UA @ admin @ c:irua:173591 Serial 6571
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Author Chaves, A.; Moura, V.N.; Linard, F.J.A.; Covaci, L.; Milošević, M.V.
  Title Tunable magnetic focusing using Andreev scattering in superconductor-graphene hybrid devices Type A1 Journal article
  Year 2020 Publication Journal Of Applied Physics Abbreviated Journal J Appl Phys
  Volume 128 Issue 12 Pages 124303
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
  Abstract We perform the wavepacket dynamics simulation of a graphene-based device where propagating electron trajectories are tamed by an applied magnetic field toward a normal/superconductor interface. The magnetic field controls the incidence angle of the incoming electronic wavepacket at the interface, which results in the tunable electron-hole ratio in the reflected wave function due to the angular dependence of the Andreev reflection. Here, mapped control of the quasiparticle trajectories by the external magnetic field not only defines an experimental probe for fundamental studies of the Andreev reflection in graphene but also lays the foundation for further development of magnetic focusing devices based on nanoengineered superconducting two-dimensional materials.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000576393200002 Publication Date 2020-09-28
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.2 Times cited 1 Open Access Not_Open_Access
  Notes ; This work was supported by the Brazilian Council for Research (CNPq) through the PRONEX/FUNCAP and PQ programs and by the Research Foundation-Flanders (FWO). ; Approved Most recent IF: 3.2; 2020 IF: 2.068
  Call Number UA @ admin @ c:irua:172730 Serial 6639
Permanent link to this record
 

 
Author Nakhaee, M.; Ketabi, S.A.; Peeters, F.M.
  Title Machine learning approach to constructing tight binding models for solids with application to BiTeCl Type A1 Journal article
  Year 2020 Publication Journal Of Applied Physics Abbreviated Journal J Appl Phys
  Volume 128 Issue 21 Pages 215107
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract Finding a tight-binding (TB) model for a desired solid is always a challenge that is of great interest when, e.g., studying transport properties. A method is proposed to construct TB models for solids using machine learning (ML) techniques. The approach is based on the LCAO method in combination with Slater-Koster (SK) integrals, which are used to obtain optimal SK parameters. The lattice constant is used to generate training examples to construct a linear ML model. We successfully used this method to find a TB model for BiTeCl, where spin-orbit coupling plays an essential role in its topological behavior.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000597311900001 Publication Date 2020-12-03
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.2 Times cited 10 Open Access
  Notes ; This work was supported by the Methusalem program of the Flemish government and was partially supported by BOF (UAntwerpen Grant Reference No. ADPERS/BAP/RS/ 2019). We would like to thank one of the anonymous referees for assisting us in making the paper more accessible to the reader. ; Approved Most recent IF: 3.2; 2020 IF: 2.068
  Call Number UA @ admin @ c:irua:174380 Serial 6691
Permanent link to this record
 

 
Author Milošević, M.V.; Mandrus, D.
  Title 2D quantum materials : magnetism and superconductivity Type A1 Journal article
  Year 2021 Publication Journal Of Applied Physics Abbreviated Journal J Appl Phys
  Volume 130 Issue 18 Pages 180401
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000720289900004 Publication Date 2021-11-11
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record
  Impact Factor 2.068 Times cited Open Access Not_Open_Access
  Notes Approved Most recent IF: 2.068
  Call Number UA @ admin @ c:irua:184090 Serial 6963
Permanent link to this record
 

 
Author Bafekry, A.; Stampfl, C.; Naseri, M.; Fadlallah, M.M.; Faraji, M.; Ghergherehchi, M.; Gogova, D.; Feghhi, S.A.H.
  Title Effect of electric field and vertical strain on the electro-optical properties of the MoSi2N4 bilayer : a first-principles calculation Type A1 Journal article
  Year 2021 Publication Journal Of Applied Physics Abbreviated Journal J Appl Phys
  Volume 129 Issue 15 Pages 155103
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract Recently, a two-dimensional (2D) MoSi 2N 4 (MSN) structure has been successfully synthesized [Hong et al., Science 369(6504), 670-674 (2020)]. Motivated by this result, we investigate the structural, electronic, and optical properties of MSN monolayer (MSN-1L) and bilayer (MSN-2L) under the applied electric field (E-field) and strain using density functional theory calculations. We find that the MSN-2L is a semiconductor with an indirect bandgap of 1.60 (1.80)eV using Perdew-Burke-Ernzerhof (HSE06). The bandgap of MSN-2L decreases as the E-field increases from 0.1 to 0.6V/angstrom and for larger E-field up to 1.0V/angstrom the bilayer becomes metallic. As the vertical strain increases, the bandgap decreases; more interestingly, a semiconductor to a metal phase transition is observed at a strain of 12 %. Furthermore, the optical response of the MSN-2L is in the ultraviolet (UV) region of the electromagnetic spectrum. The absorption edge exhibits a blue shift by applying an E-field or a vertical compressive strain. The obtained interesting properties suggest MSN-2L as a promising material in electro-mechanical and UV opto-mechanical devices.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000640620400003 Publication Date 2021-04-15
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited Open Access OpenAccess
  Notes Approved Most recent IF: 2.068
  Call Number UA @ admin @ c:irua:178233 Serial 6981
Permanent link to this record
 

 
Author Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M.
  Title On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study Type A1 Journal article
  Year 2017 Publication Journal of applied physics Abbreviated Journal
  Volume 121 Issue 4 Pages 044505
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract In this work, the electrostatic control in metal-oxide-semiconductor field-effect transistors based on MoS2 is studied, with respect to the number of MoS2 layers in the channel and to the equivalent oxide thickness of the gate dielectric, using first-principles calculations combined with a quantum transport formalism. Our simulations show that a compromise exists between the drive current and the electrostatic control on the channel. When increasing the number of MoS2 layers, a degradation of the device performances in terms of subthreshold swing and OFF currents arises due to the screening of the MoS2 layers constituting the transistor channel. Published by AIP Publishing.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000393480100030 Publication Date 2017-01-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited Open Access
  Notes Approved no
  Call Number UA @ admin @ c:irua:152673 Serial 8329
Permanent link to this record
 

 
Author Duran, T.A.; Yayak, Y.O.; Aydin, H.; Peeters, F.M.; Yagmurcukardes, M.
  Title A perspective on the state-of-the-art functionalized 2D materials Type A1 Journal article
  Year 2023 Publication Journal of applied physics Abbreviated Journal
  Volume 134 Issue 12 Pages 120901-120929
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract Two-dimensional (2D) ultra-thin materials are more crucial than their bulk counterparts for the covalent functionalization of their surface owing to atomic thinness, large surface-to-volume ratio, and high reactivity of surface atoms having unoccupied orbitals. Since the surface of a 2D material is composed of atoms having unoccupied orbitals, covalent functionalization enables one to improve or precisely modify the properties of the ultra-thin materials. Chemical functionalization of 2D materials not only modifies their intrinsic properties but also makes them adapted for nanotechnology applications. Such engineered materials have been used in many different applications with their improved properties. In the present Perspective, we begin with a brief history of functionalization followed by the introduction of functionalized 2D materials. Our Perspective is composed of the following sections: the applications areas of 2D graphene and graphene oxide crystals, transition metal dichalcogenides, and in-plane anisotropic black phosphorus, all of which have been widely used in different nanotechnology applications. Finally, our Perspectives on the future directions of applications of functionalized 2D materials are given. The present Perspective sheds light on the current progress in nanotechnological applications of engineered 2D materials through surface functionalization.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 001087770500008 Publication Date
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record
  Impact Factor 3.2 Times cited Open Access
  Notes Approved Most recent IF: 3.2; 2023 IF: 2.068
  Call Number UA @ admin @ c:irua:201281 Serial 9000
Permanent link to this record
 

 
Author Liu, J.; Xu, W.; Xiao, Y.M.; Ding, L.; Li, H.W.; Peeters, F.M.
  Title Optical spectrum of n-type and p-type monolayer MoS₂ in the presence of proximity-induced interactions Type A1 Journal article
  Year 2023 Publication Journal of applied physics Abbreviated Journal
  Volume 134 Issue 22 Pages 224301-224307
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract In this paper, we examined the effects of proximity-induced interactions such as Rashba spin-orbit coupling and effective Zeeman fields (EZFs) on the optical spectrum of n-type and p-type monolayer (ML)-MoS2. The optical conductivity is evaluated using the standard Kubo formula under random-phase approximation by including the effective electron-electron interaction. It has been found that there exist two absorption peaks in n-type ML-MoS2 and two knife shaped absorptions in p-type ML-MoS2, which are contributed by the inter-subband spin-flip electronic transitions within conduction and valence bands at valleys K and K ' with a lifted valley degeneracy. The optical absorptions in n-type and p-type ML-MoS 2 occur in THz and infrared radiation regimes and the position, height, and shape of them can be effectively tuned by Rashba parameter, EZF parameters, and carrier density. The interesting theoretical predictions in this study would be helpful for the experimental observation of the optical absorption in infrared to THz bandwidths contributed by inter-subband spin-flip electronic transitions in a lifted valley degeneracy monolayer transition metal dichalcogenides system. The obtained results indicate that ML-MoS2 with the platform of proximity interactions make it a promising infrared and THz material for optics and optoelectronics.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 001135684400003 Publication Date 2023-12-11
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record
  Impact Factor 3.2 Times cited Open Access
  Notes Approved Most recent IF: 3.2; 2023 IF: 2.068
  Call Number UA @ admin @ c:irua:202777 Serial 9069
Permanent link to this record
 

 
Author Mehmonov, K.; Ergasheva, A.; Yusupov, M.; Khalilov, U.
  Title The role of carbon monoxide in the catalytic synthesis of endohedral carbyne Type A1 Journal article
  Year 2023 Publication Journal of applied physics Abbreviated Journal
  Volume 134 Issue 14 Pages 144303-144307
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract The unique physical properties of carbyne, a novel carbon nanostructure, have attracted considerable interest in modern nanotechnology. While carbyne synthesis has been accomplished successfully using diverse techniques, the underlying mechanisms governing the carbon monoxide-dependent catalytic synthesis of endohedral carbyne remain poorly understood. In this simulation-based study, we investigate the synthesis of endohedral carbyne from carbon and carbon monoxide radicals in the presence of a nickel catalyst inside double-walled carbon nanotubes with a (5,5)@(10,10) structure. The outcome of our investigation demonstrates that the incorporation of the carbon atom within the Ni-n@(5,5)@(10,10) model system initiates the formation of an elongated carbon chain. In contrast, upon the introduction of carbon monoxide radicals, the growth of the carbyne chain is inhibited as a result of the oxidation of endohedral nickel clusters by oxygen atoms after the initial steps of nucleation. Our findings align with prior theoretical, simulation, and experimental investigations, reinforcing their consistency and providing valuable insights into the synthesis of carbyne-based nanodevices that hold promising potential for future advancements in nanotechnology.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 001083993400003 Publication Date 2023-10-10
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record
  Impact Factor 3.2 Times cited Open Access
  Notes Approved Most recent IF: 3.2; 2023 IF: 2.068
  Call Number UA @ admin @ c:irua:201233 Serial 9106
Permanent link to this record
 

 
Author Herrebout, D.; Bogaerts, A.; Yan, M.; Goedheer, W.; Dekempeneer, E.; Gijbels, R.
  Title 1D fluid model for an rf methane plasma of interest in deposition of diamond-like carbon layers Type A1 Journal article
  Year 2001 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 90 Issue Pages 570-579
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000169660000007 Publication Date 2002-07-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 83 Open Access
  Notes Approved Most recent IF: 2.068; 2001 IF: 2.128
  Call Number UA @ lucian @ c:irua:37250 c:irua:37250 c:irua:37250 c:irua:37250 Serial 2
Permanent link to this record
 

 
Author Li, D.Y.; Zeng, Y.J.; Pereira, L.M.C.; Batuk, D.; Hadermann, J.; Zhang, Y.Z.; Ye, Z.Z.; Temst, K.; Vantomme, A.; Van Bael, M.J.; Van Haesendonck, C.;
  Title Anisotropic magnetism and spin-dependent transport in Co nanoparticle embedded ZnO thin films Type A1 Journal article
  Year 2013 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 114 Issue 3 Pages 033909-6
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract Oriented Co nanoparticles were obtained by Co ion implantation in crystalline ZnO thin films grown by pulsed laser deposition. Transmission electron microscopy revealed the presence of elliptically shaped Co precipitates with nanometer size, which are embedded in the ZnO thin films, resulting in anisotropic magnetic behavior. The low-temperature resistance of the Co-implanted ZnO thin films follows the Efros-Shklovskii type variable-range-hopping. Large negative magnetoresistance (MR) exceeding 10% is observed in a magnetic field of 1 T at 2.5K and the negative MR survives up to 250K (0.3%). The negative MR reveals hysteresis as well as anisotropy that correlate well with the magnetic properties, clearly demonstrating the presence of spin-dependent transport. (C) 2013 AIP Publishing LLC.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000322202700071 Publication Date 2013-07-17
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 10 Open Access
  Notes Approved Most recent IF: 2.068; 2013 IF: 2.185
  Call Number UA @ lucian @ c:irua:110765 Serial 126
Permanent link to this record
 

 
Author Castelano, L.K.; Hai, G.Q.; Partoens, B.; Peeters, F.M.
  Title Artificial molecular quantum rings under magnetic field influence Type A1 Journal article
  Year 2009 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 106 Issue 7 Pages 073702,1-073702,8
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract The ground states of a few electrons confined in two vertically coupled quantum rings in the presence of an external magnetic field are studied systematically within the current spin-density functional theory. Electron-electron interactions combined with inter-ring tunneling affect the electronic structure and the persistent current. For small values of the external magnetic field, we recover the zero magnetic field molecular quantum ring ground state configurations. Increasing the magnetic field many angular momentum, spin, and isospin transitions are predicted to occur in the ground state. We show that these transitions follow certain rules, which are governed by the parity of the number of electrons, the single-particle picture, Hunds rules, and many-body effects.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000270915600047 Publication Date 2009-10-03
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 5 Open Access
  Notes Approved Most recent IF: 2.068; 2009 IF: 2.072
  Call Number UA @ lucian @ c:irua:86926 Serial 155
Permanent link to this record
 

 
Author Chang, K.; Peeters, F.M.
  Title Asymmetric stark shifts in InGaAs/GaAs near-surface quantum wells: the image charge effect Type A1 Journal article
  Year 2000 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 88 Issue Pages 5246-5251
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000089813800048 Publication Date 2002-07-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 20 Open Access
  Notes Approved Most recent IF: 2.068; 2000 IF: 2.180
  Call Number UA @ lucian @ c:irua:34355 Serial 159
Permanent link to this record
 

 
Author Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M.
  Title Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology Type A1 Journal article
  Year 2009 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 106 Issue 5 Pages 053702,1-053702,8
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract In this study we investigate the effect of device topology on the ballistic current in n-channel metal-oxide-semiconductor field-effect transistors. Comparison of the nanoscale planar and double-gate devices reveals that, down to a certain thickness of the double gate film, the ballistic current flowing in the double gate device is twice as large compared to its planar counterpart. On the other hand, further thinning of the film beyond this threshold is found to change noticeably the confinement and transport characteristics, which are strongly depending on the film material and the surface orientation. For double gate Ge and Si devices there exists a critical film thickness below which the transverse gate field is no longer effectively screened by the inversion layer electron gas and mutual inversion of the two gates is turned on. In the case of GaAs and other similar IIIV compounds, a decrease in the film thickness may drastically change the occupation of the L-valleys and therefore amend the transport properties. The simulation results show that, in both cases, the ballistic current and the transconductance are considerably enhanced.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000269850300052 Publication Date 2009-09-03
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 3 Open Access
  Notes Approved Most recent IF: 2.068; 2009 IF: 2.072
  Call Number UA @ lucian @ c:irua:79744 Serial 214
Permanent link to this record
 

 
Author Milovanovic, S.P.; Masir, M.R.; Peeters, F.M.
  Title Bilayer graphene Hall bar with a pn-junction Type A1 Journal article
  Year 2013 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 114 Issue 11 Pages 113706
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model, and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: (i) both sides of the junction have the same carrier type and (ii) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band gap opens. The second case exhibits a bend resistance that is asymmetric in magnetic field as a consequence of snake states along the pn-interface, where the maximum is shifted away from zero magnetic field.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000324827200031 Publication Date 2013-09-17
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 3 Open Access
  Notes This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN, and the Methusalem Foundation of the Flemish government. Approved Most recent IF: 2.068; 2013 IF: 2.185
  Call Number UA @ lucian @ c:irua:111169 Serial 234
Permanent link to this record
 

 
Author Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A.
  Title Bond length variation in Ga1-xInxAs crystals from the Tersoff potential Type A1 Journal article
  Year 2007 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 101 Issue 12 Pages 123508,1-4
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000247625700034 Publication Date 2007-06-20
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 19 Open Access
  Notes Approved Most recent IF: 2.068; 2007 IF: 2.171
  Call Number UA @ lucian @ c:irua:67460 Serial 247
Permanent link to this record
 

 
Author Schattschneider, P.; Ennen, I.; Stoger-Pollach, M.; Verbeeck, J.
  Title Circular dichroism in the electron microscope: progress and applications (invited) Type A1 Journal article
  Year 2010 Publication Journal of applied physics Abbreviated Journal J Appl Phys
  Volume 107 Issue 9 Pages 09d311,1-09d311,6
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract According to theory, x-ray magnetic circular dichroism in a synchrotron is equivalent to energy loss magnetic chiral dichroism (EMCD) in a transmission electron microscope (TEM). After a synopsis of the development of EMCD, the theoretical background is reviewed and recent results are presented, focusing on the study of magnetic nanoparticles for ferrofluids and Heusler alloys for spintronic devices. Simulated maps of the dichroic strength as a function of atom position in the crystal allow evaluating the influence of specimen thickness and sample tilt on the experimental EMCD signal. Finally, the possibility of direct observation of chiral electronic transitions with atomic resolution in a TEM is discussed.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000277834300276 Publication Date 2010-05-12
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN (down) 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 28 Open Access
  Notes Esteem Approved Most recent IF: 2.068; 2010 IF: 2.079
  Call Number UA @ lucian @ c:irua:83653UA @ admin @ c:irua:83653 Serial 361
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