| Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
| Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr |
112 |
9 |
UA library record; WoS full record; WoS citing articles |
| Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. |
Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope |
1996 |
Nuclear instruments and methods in physics research |
B112 |
4 |
UA library record; WoS full record; WoS citing articles |
| Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O. |
Defect characterization in high temperature implanted 6H-SiC using TEM |
1997 |
Nuclear instruments and methods in physics research: B |
127/128 |
17 |
UA library record; WoS full record; WoS citing articles |
| Zhang, Z.; Ma, L.N.; Liao, X.Z.; van Landuyt, J. |
A transmission electron-microscopy study of crystalline surface domains on al-co decagonal quasi-crystals and the \tau2-Al13CO4 approximant |
1994 |
Philosophical magazine letters |
70 |
4 |
UA library record; WoS full record; WoS citing articles |
| Teodorescu, V.S.; Mihailescu, I.N.; Gyorgy, E.; Luches, A.; Martino, M.; Nistor, L.C.; van Landuyt, J.; Hermann, J. |
The study of a crater forming on the surface of a Ti target submitted to multipulse excimer laser irradiation under low pressure N2 |
1996 |
Journal of modern optics |
43 |
11 |
UA library record; WoS full record; WoS citing articles |
| Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope |
1995 |
Materials science and technology |
11 |
7 |
UA library record; WoS full record; WoS citing articles |
| Krekels, T.; Milat, O.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Slater, P.R.; Greaves, C. |
SO4-chain formation and ordering in [YSrCa]Sr2Cu2.78(SO4)0.22O7-\delta |
1993 |
Physica: C : superconductivity |
210 |
18 |
UA library record; WoS full record; WoS citing articles |
| Volkov, V.V.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Zhukov, E.G.; Polulyak, E.S.; Novotortsev, V.M. |
Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport |
1993 |
Crystal research and technology |
28 |
1 |
UA library record; WoS full record; WoS citing articles |
| Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K. |
Microstructure of Mn-doped, spin-cast FeSi2 |
1997 |
Journal of electron microscopy |
46 |
3 |
UA library record; WoS full record; WoS citing articles |
| Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals |
1996 |
The journal of imaging science and technology |
40 |
4 |
UA library record; WoS full record; WoS citing articles |
| van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
The influence of crystal thickness on the image tone |
2003 |
Journal of imaging science |
47 |
|
UA library record; WoS full record; WoS citing articles |
| van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Bollen, D.; de Keyzer, R.; van Roost, C. |
Influence of twinning on the morphology of AgBr and AgCl microcrystals |
2001 |
The journal of imaging science and technology |
45 |
|
UA library record; WoS full record; WoS citing articles |
| Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. |
New method to determine the parity of the number of twin planes in tabular silver halide microcrystals from top views |
1997 |
The journal of imaging science and technology |
41 |
1 |
UA library record; WoS full record; WoS citing articles |
| van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; van Roost, C.; de Keyzer, R. |
A TEM study of non-parallel twins inducing thickness growth in silver chloride {111} tabular crystals |
2001 |
The journal of imaging science and technology |
45 |
|
UA library record; WoS full record; WoS citing articles |
| Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
2001 |
Institute of physics conference series |
|
|
UA library record; WoS full record; |
| van Landuyt, J.; Van Tendeloo, G. |
Charcaterization by high-resolution transmission electron microscopy |
1998 |
|
|
|
UA library record; WoS full record; |
| De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy |
2002 |
|
|
|
UA library record; WoS full record; |
| Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
1999 |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
|
|
UA library record; WoS full record; |
| Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
2000 |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
5 |
|
UA library record; WoS full record; |
| Schryvers, D.; Goessens, C.; van Renterghem, W.; van Landuyt, J.; de Keyzer, R. |
Conventional and HREM study of structural defects in nanostructured silver halides |
1998 |
|
|
|
UA library record |
| Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. |
Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study |
2000 |
|
|
|
UA library record; WoS full record; |
| van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
Defect related growth of tabular AgCl(100) crystals: a TEM study |
1998 |
|
|
|
UA library record; WoS full record; |
| van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. |
Defects in AgCl and AgBr(100) tabular crystals studied by TEM |
1998 |
|
|
|
UA library record |
| Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
|
|
UA library record; WoS full record; |
| Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. |
Electron microscopy: principles and fundamentals |
1997 |
|
|
|
UA library record |
| Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. |
Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization |
2000 |
Materials science forum
T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA |
338-3 |
2 |
UA library record; WoS full record; WoS citing articles |
| Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM |
1999 |
Physica status solidi: A: applied research
T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland |
171 |
40 |
UA library record; WoS full record; WoS citing articles |
| Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM |
1999 |
Physica status solidi: A: applied research |
171 |
40 |
UA library record; WoS full record; WoS citing articles |
| Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. |
Handbook of microscopy: applications in materials science, solid-state physics and chemistry |
1997 |
|
|
|
UA library record |
| Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J. |
High resolution TEM observation of in situ colloid formation in CaF2 crystals |
1997 |
Materials science forum |
239-241 |
3 |
UA library record; WoS full record; WoS citing articles |
