Records |
Author |
Nistor, L.; Teodorescu, V.; Ghica, C.; van Landuyt, J.; Dinca, G.; Georgeoni, P. |
Title |
The influence of the h-BN morphology and structure on the c-BN growth |
Type |
A1 Journal article |
Year |
2001 |
Publication |
Diamond and related materials
T2 – 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL |
Abbreviated Journal |
Diam Relat Mater |
Volume |
10 |
Issue |
3-7 |
Pages |
1352-1356 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The morphology and structure of hexagonal graphitic BN (h-BN) powders with graphitization indices GI <5, used as precursors for the synthesis of cubic BN (c-BN) crystals, has been investigated by transmission electron microscopy in diffraction contrast and high resolution. We show that besides the GI, which is a general parameter for controlling the structural quality of h-EN ponders, some other microstructural features strongly influence the synthesis of c-BN. In our opinion, the high reactivity of some h-BN powders results from the presence of some nucleation centers for c-BN, observed at the edges of the h-BN particles. They are formed by a rearrangement of the graphitic (0002) planes by bending back, joining in pairs and forming locally nanoarches (half nanotubes). In these particular places, the nature of bonding locally turns towards sp(3), as in the case of c-BN, (C) 2001 Elsevier Science B.V. All rights reserved. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000168730600206 |
Publication Date |
2002-10-14 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
ISSN |
0925-9635; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.561 |
Times cited |
17 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.561; 2001 IF: 1.902 |
Call Number |
UA @ lucian @ c:irua:103421 |
Serial |
3586 |
Permanent link to this record |
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Author |
Degutis, G.; Pobedinskas, P.; Turner, S.; Lu, Y.-G.; Al Riyami, S.; Ruttens, B.; Yoshitake, T.; D'Haen, J.; Haenen, K.; Verbeeck, J.; Hardy, A.; Van Bael, M.K. |
Title |
CVD diamond growth from nanodiamond seeds buried under a thin chromium layer |
Type |
A1 Journal article |
Year |
2016 |
Publication |
Diamond and related materials |
Abbreviated Journal |
Diam Relat Mater |
Volume |
64 |
Issue |
64 |
Pages |
163-168 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
This work presents a morphological and structural analysis of CVD diamond growth on silicon from nanodiamond seeds covered by a 50 nm thick chromium layer. The role of carbon diffusion as well as chromium and carbon silicide formation is analyzed. The local diamond environment is investigated by scanning transmission electron microscopy in combination with electron energy-loss spectroscopy. The evolution of the diamond phase composition (sp3/sp2) is evaluated by micro-Raman spectroscopy. Raman and X-ray diffraction analysis are used to identify the interfacial phases formed during CVD growth. Based upon the observed morphological and structural evolution, a diamond growth model from nanodiamond seeds buried beneath a thin Cr layer is proposed. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000374608100020 |
Publication Date |
2016-02-20 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
ISSN |
0925-9635 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.561 |
Times cited |
11 |
Open Access |
|
Notes |
The authors acknowledge financial support provided by Research Program FWO G.056.810 and G0044.13N. A.H. and M.K.V.B are grateful to Hercules Foundation Flanders for financial support. P.P. and S.T. are Postdoctoral Fellows of the Research Foundation – Flanders (FWO). The Titan microscope used for this work was partially funded by the Hercules Foundation. |
Approved |
Most recent IF: 2.561 |
Call Number |
c:irua:133624UA @ admin @ c:irua:133624 |
Serial |
4091 |
Permanent link to this record |
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Author |
Felgen, N.; Naydenov, B.; Turner, S.; Jelezko, F.; Reithmaier, J.P.; Popov, C. |
Title |
Incorporation and study of SiV centers in diamond nanopillars |
Type |
A1 Journal article |
Year |
2016 |
Publication |
Diamond and related materials |
Abbreviated Journal |
Diam Relat Mater |
Volume |
64 |
Issue |
64 |
Pages |
64-69 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
We report on the incorporation of SiV centers during hot filament chemical vapor deposition of diamond on top of diamond nanopillars with diameters down to 100 nm. The nanopillars themselves were prepared from nano crystalline diamond films by applying electron beam lithography and inductively coupled plasma reactive ion etching. The optical investigations revealed the presence of ensembles of SiV color centers incorporated during the overgrowth step. (C) 2016 Elsevier B.V. All rights reserved. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000374608100009 |
Publication Date |
2016-01-16 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0925-9635 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.561 |
Times cited |
14 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.561 |
Call Number |
UA @ lucian @ c:irua:133623 |
Serial |
4193 |
Permanent link to this record |
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Author |
Deshmukh, S.; Sankaran, K.J.; Srinivasu, K.; Korneychuk, S.; Banerjee, D.; Barman, A.; Bhattacharya, G.; Phase, D.M.; Gupta, M.; Verbeeck, J.; Leou, K.C.; Lin, I.N.; Haenen, K.; Roy, S.S. |
Title |
Local probing of the enhanced field electron emission of vertically aligned nitrogen-doped diamond nanorods and their plasma illumination properties |
Type |
A1 Journal article |
Year |
2018 |
Publication |
Diamond and related materials |
Abbreviated Journal |
Diam Relat Mater |
Volume |
83 |
Issue |
83 |
Pages |
118-125 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
A detailed conductive atomic force microscopic investigation is carried out to directly image the electron emission behavior for nitrogen-doped diamond nanorods (N-DNRs). Localized emission measurements illustrate uniform distribution of high-density electron emission sites from N-DNRs. Emission sites coupled to nano graphitic phases at the grain boundaries facilitate electron transport and thereby enhance field electron emission from N-DNRs, resulting in a device operation at low turn-on fields of 6.23 V/mu m, a high current density of 1.94 mA/cm(2) (at an applied field of 11.8 V/mu m) and a large field enhancement factor of 3320 with a long lifetime stability of 980 min. Moreover, using N-DNRs as cathodes, a microplasma device that can ignite a plasma at a low threshold field of 390 V/mm achieving a high plasma illumination current density of 3.95 mA/cm2 at an applied voltage of 550 V and a plasma life-time stability for a duration of 433 min was demonstrated. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000430767200017 |
Publication Date |
2018-02-07 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0925-9635 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.561 |
Times cited |
9 |
Open Access |
Not_Open_Access |
Notes |
; S. Deshmulch, D. Banerjee and G. Bhattacharya are indebted to Shiv Nadar University for providing Ph.D. scholarships. K.J. Sankaran and K. Haenen like to thank the financial support of the Research Foundation Flanders (FWO) via Research Grant 12I8416N and Research Project 1519817N, and the Methusalem “NANO” network. K.J. Sankaran is a Postdoctoral Fellow of the Research Foundation-Flanders (FWO). The Qu-Ant-EM microscope used for the TEM experiments was partly funded by the Hercules fund from the Flemish Government. S. Korneychuk and J. Verbeeck acknowledge funding from GOA project “Solarpaint” of the University of Antwerp. ; |
Approved |
Most recent IF: 2.561 |
Call Number |
UA @ lucian @ c:irua:151609UA @ admin @ c:irua:151609 |
Serial |
5030 |
Permanent link to this record |
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Author |
Schryvers, D.; Ma, Y. |
Title |
In-situ TEM study of the Ni5Al3 to B2 + L12 decomposition in Ni65Al35 |
Type |
A1 Journal article |
Year |
1995 |
Publication |
Materials letters |
Abbreviated Journal |
Mater Lett |
Volume |
23 |
Issue |
|
Pages |
105-111 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Homogenised and quenched Ni65Al35 samples were heated and studied in situ in a CM20 electron microscope up to 900 degrees C. The Ni5Al3 phase first forming around 550 degrees C in the quenched L1(0) microtwinned martensite starts to decompose around 800 degrees C yielding B2 precipitates in a twinned L1(2) matrix. The latter twinning is a remainder of the microtwinning in the original room temperature martensite. Also the crystallographic relations between precipitates and matrix can be traced back to the original formation of twinned martensite plates within the austenite. Some aspects of the dynamics of the process are discussed on the basis of snap shots and video recordings. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1995QW53500020 |
Publication Date |
2002-07-25 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0167-577X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.489 |
Times cited |
5 |
Open Access |
|
Notes |
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Approved |
no |
Call Number |
UA @ lucian @ c:irua:13166 |
Serial |
1585 |
Permanent link to this record |
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Author |
Batuk, D.; de Dobbelaere, C.; Tsirlin, A.A.; Abakumov, A.M.; Hardy, A.; van Bael, M.K.; Greenblatt, M.; Hadermann, J. |
Title |
Crystal structure and magnetic properties of the Cr-doped spiral antiferromagnet BiMnFe2O6 |
Type |
A1 Journal article |
Year |
2013 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
48 |
Issue |
9 |
Pages |
2993-2997 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
We report the Cr3+ for Mn3+ substitution in the BiMnFe2O6 structure. The BiCrxMn1-xFe2O6 solid solution is obtained by the solution-gel synthesis technique for the x values up to 0.3. The crystal structure investigation using a combination of X-ray powder diffraction and transmission electron microscopy demonstrates that the compounds retain the parent BiMnFe2O6 structure (for x = 0.3, a = 5.02010(6)angstrom, b = 7.06594(7)angstrom, c = 12.6174(1)angstrom, S.G. Pbcm, R-1 = 0.036, R-p = 0.011) with only a slight decrease in the cell parameters associated with the Cr3+ for Mn3+ substitution. Magnetic susceptibility measurements suggest strong similarities in the magnetic behavior of BiCrxMn1-xFe2O6 (x = 0.2; 0.3) and parent BiMnFe2O6. Only T-N slightly decreases upon Cr doping that indicates a very subtle influence of Cr3+ cations on the magnetic properties at the available substitution rates. (C) 2013 Elsevier Ltd. All rights reserved. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000322354000002 |
Publication Date |
2013-04-26 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0025-5408; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.446 |
Times cited |
3 |
Open Access |
|
Notes |
Fwo |
Approved |
Most recent IF: 2.446; 2013 IF: 1.968 |
Call Number |
UA @ lucian @ c:irua:109755 |
Serial |
561 |
Permanent link to this record |
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Author |
Tsirlin, A.A.; Chernaya, V.V.; Shpanchenko, R.V.; Antipov, E.V.; Hadermann, J. |
Title |
Crystal structure and properties of the new complex vanadium oxide K2SrV3O9 |
Type |
A1 Journal article |
Year |
2005 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
40 |
Issue |
5 |
Pages |
800-809 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000229376500010 |
Publication Date |
2005-03-01 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0025-5408; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.446 |
Times cited |
9 |
Open Access |
|
Notes |
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Approved |
Most recent IF: 2.446; 2005 IF: 1.380 |
Call Number |
UA @ lucian @ c:irua:52373 |
Serial |
564 |
Permanent link to this record |
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Author |
Oró-Solé, J.; Frontera, C.; Beltrán-Porter, D.; Lebedev, O.I.; Van Tendeloo, G.; Fuertes, A. |
Title |
Crystal structures of superconducting sodium intercalates of hafnium nitride chloride |
Type |
A1 Journal article |
Year |
2006 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
41 |
Issue |
5 |
Pages |
934-940 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000238116800005 |
Publication Date |
2006-04-19 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0025-5408; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.446 |
Times cited |
8 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.446; 2006 IF: 1.383 |
Call Number |
UA @ lucian @ c:irua:59594 |
Serial |
579 |
Permanent link to this record |
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Author |
Sullivan, E.; Gillie, L.J.; Hadermann, J.; Greaves, C. |
Title |
Fluorine intercalation in the n=1 and n=2 layered manganites Sr2MnO3.5+x and Sr3Mn2O6 |
Type |
A1 Journal article |
Year |
2013 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
48 |
Issue |
4 |
Pages |
1598-1605 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Fluorine insertion into the oxygen defect superstructure manganite Sr2MnO3.5+x has been shown by transmission electron microscopy (TEM) to result in two levels of fluorination. In the higher fluorine content sections, the fluorine anions displace oxygen anions from their apical positions into the equatorial vacancies, thus destroying the superstructure and reverting to a K2NiF4-type structure (a = 3.8210(1) angstrom and c = 12.686(1) angstrom). Conversely, lower fluorine content sections retain the Sr2MnO3.5+x defect superstructure, crystallising in the P2(1)/c space group. Fluorine intercalation into the reduced double-layer manganite Sr3Mn2O6 occurs in a step-wise fashion according to the general formula Sr3Mn2O6Fy with y = 1, 2, and 3. It is proposed that the y = 1 phase (a = 3.815(1)angstrom, c = 20.29(2) angstrom) is produced by the filling of all the equatorial oxygen vacancies by fluorine atoms whilst the y = 2 phase (a = 3.8222(2) angstrom, c = 21.2435(3)angstrom) has a random distribution of fluorine anions throughout both interstitial rocksalt and equatorial sites. Neutron powder diffraction data suggest that the fully fluorinated y = 3 phase (a = 3.8157(6) angstrom, c = 23.666(4) angstrom) corresponds to the complete occupation of all the equatorial oxygen vacancies and the interstitial sites by intercalated fluorine. (C) 2013 Elsevier Ltd. All rights reserved. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000317544600040 |
Publication Date |
2013-01-11 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0025-5408; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.446 |
Times cited |
4 |
Open Access |
|
Notes |
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Approved |
Most recent IF: 2.446; 2013 IF: 1.968 |
Call Number |
UA @ lucian @ c:irua:108485 |
Serial |
1238 |
Permanent link to this record |
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Author |
Serov, T.V.; Dombrovski, E.N.; Ardashnikova, E.I.; Dolgikh, V.A.; el Omari, M.; el Omari, M.; Abaouz, A.; Senegas, J.; Chaban, N.G.; Abakumov, A.M.; Van Tendeloo, G. |
Title |
Fluorite-like phases in the BaF2-BiF3-Bi2O3 system-synthesis, conductivity and defect clustering |
Type |
A1 Journal article |
Year |
2005 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
40 |
Issue |
5 |
Pages |
821-830 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000229376500012 |
Publication Date |
2005-03-01 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0025-5408; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.446 |
Times cited |
4 |
Open Access |
|
Notes |
Iap V-1 |
Approved |
Most recent IF: 2.446; 2005 IF: 1.380 |
Call Number |
UA @ lucian @ c:irua:54838 |
Serial |
1240 |
Permanent link to this record |
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Author |
Rembeza, E.S.; Richard, O.; van Landuyt, J. |
Title |
Influence of laser and isothermal treatments on microstructural properties of SnO2 films |
Type |
A1 Journal article |
Year |
1999 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
34 |
Issue |
10/11 |
Pages |
1527-1533 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000084625300006 |
Publication Date |
2002-07-25 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0025-5408; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.446 |
Times cited |
17 |
Open Access |
|
Notes |
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Approved |
Most recent IF: 2.446; 1999 IF: 0.840 |
Call Number |
UA @ lucian @ c:irua:29691 |
Serial |
1626 |
Permanent link to this record |
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Author |
Shpanchenko, R.V.; Lapshina, O.A.; Antipov, E.V.; Hadermann, J.; Kaul, E.E.; Geibel, C. |
Title |
New lead vanadium phosphate with langbeinite-type structure: Pb1.5V2(PO4)3 |
Type |
A1 Journal article |
Year |
2005 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
40 |
Issue |
9 |
Pages |
1569-1576 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000231208100018 |
Publication Date |
2005-06-01 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0025-5408; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.446 |
Times cited |
14 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.446; 2005 IF: 1.380 |
Call Number |
UA @ lucian @ c:irua:55031 |
Serial |
2320 |
Permanent link to this record |
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Author |
Hardy, A.; Van Elshocht, S.; De Dobbelaere, C.; Hadermann, J.; Pourtois, G.; De Gendt, S.; Afanas'ev, V.V.; Van Bael, M.K. |
Title |
Properties and thermal stability of solution processed ultrathin, high-k bismuth titanate (Bi2Ti2O7) films |
Type |
A1 Journal article |
Year |
2012 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
47 |
Issue |
3 |
Pages |
511-517 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
Ultrathin bismuth titanate films (Bi2Ti2O7, 5-25 nm) are deposited onto SiO2/Si substrates by aqueous chemical solution deposition and their evolution during annealing is studied. The films crystallize into a preferentially oriented, pure pyrochlore phase between 500 and 700 degrees C, depending on the film thickness and the total thermal budget. Crystallization causes a strong increase of surface roughness compared to amorphous films. An increase of the interfacial layer thickness is observed after anneal at 600 degrees C, together with intermixing of bismuth with the substrate as shown by TEM-EDX. The band gap was determined to be similar to 3 eV from photoconductivity measurements and high dielectric constants between 30 and 130 were determined from capacitance voltage measurements, depending on the processing conditions. (C) 2012 Elsevier Ltd. All rights reserved. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000301994100001 |
Publication Date |
2012-01-10 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0025-5408; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.446 |
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.446; 2012 IF: 1.913 |
Call Number |
UA @ lucian @ c:irua:97797 |
Serial |
2727 |
Permanent link to this record |
|
|
|
Author |
Batuk, M.; Tyablikov, O.A.; Tsirlin, A.A.; Kazakov, S.M.; Rozova, M.G.; Pokholok, K.V.; Filimonov, D.S.; Antipov, E.V.; Abakumov, A.M.; Hadermann, J. |
Title |
Structure and magnetic properties of a new anion-deficient perovskite Pb2Ba2BiFe4ScO13 with crystallographic shear structure |
Type |
A1 Journal article |
Year |
2013 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
48 |
Issue |
9 |
Pages |
3459-3465 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Pb2Ba2BiFe4ScO13, a new n = 5 member of the oxygen-deficient perovskite-based A(n)B(n)O(3n-2) homologous series, was synthesized using a solid-state method. The crystal structure of Pb2Ba2BiFe4ScO13 was investigated by a combination of synchrotron X-ray powder diffraction, electron diffraction, high-angle annular dark-field scanning transmission electron microscopy and Mossbauer spectroscopy. At 900 K, it crystallizes in the Ammm space group with the unit cell parameters a = 5.8459(1) angstrom, b = 4.0426(1) angstrom, and c=27.3435(1) angstrom. In the Pb2Ba2BiFe4ScO13 structure, quasi-two-dimensional perovskite blocks are periodically interleaved with 1/2[1 1 0] ((1) over bar 0 1)(p) crystallographic shear (CS) planes. At the CS planes, the corner-sharing FeO6 octahedra are transformed into chains of edge-sharing FeO5 distorted tetragonal pyramids. B-positions of the perovskite blocks between the CS planes are jointly occupied by Fe3+ and Sc3+. The chains of the FeO5 pyramids and (Fe,Sc)O-6 octahedra delimit six-sided tunnels that are occupied by double columns of cations with a lone electron pair (Pb2+). The remaining A-cations (Bi3+, Ba2+) occupy positions in the perovskite block. According to the magnetic susceptibility measurements, Pb2Ba2BiFe4ScO13 is antiferromagnetically ordered below T-N approximate to 350 K. (C) 2013 Elsevier Ltd. All rights reserved. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000322354000076 |
Publication Date |
2013-05-17 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0025-5408; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.446 |
Times cited |
2 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.446; 2013 IF: 1.968 |
Call Number |
UA @ lucian @ c:irua:109756 |
Serial |
3282 |
Permanent link to this record |
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|
|
Author |
Schuddinck, W.; Van Tendeloo, G.; Hervieu, M.; Floros, N.; Raveau, B. |
Title |
Structure of the hexagonal 16l perovskites Ba4Ca0.9Mn3.1O11.3 and Ba4Ca0.5Mn3Cu0.5O12-\delta by high-resolution electron microscopy |
Type |
A1 Journal article |
Year |
2001 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
36 |
Issue |
15 |
Pages |
2689-2700 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
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Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000172705000014 |
Publication Date |
2002-07-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0025-5408; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.446 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.446; 2001 IF: 0.715 |
Call Number |
UA @ lucian @ c:irua:54837 |
Serial |
3314 |
Permanent link to this record |
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|
|
Author |
Prituzhalov, V.A.; Abakumov, A.M.; Ardashnikova, E.I.; Dolgikh, V.A.; Van Tendeloo, G. |
Title |
:Ba2.1Bi0.9(O, F)6.8-\delta: a new ordered anion-excess fluorite |
Type |
A1 Journal article |
Year |
2007 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
42 |
Issue |
5 |
Pages |
861-869 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000245842600010 |
Publication Date |
2006-10-05 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0025-5408; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.446 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.446; 2007 IF: 1.484 |
Call Number |
UA @ lucian @ c:irua:64724 |
Serial |
3515 |
Permanent link to this record |
|
|
|
Author |
Rozova, M.G.; Grigoriev, V.V.; Tyablikov, O.A.; Filimonov, D.S.; Zakharov, K.V.; Volkova, O.S.; Vasiliev, A.N.; Antipov, E.V.; Abakumov, A.M. |
Title |
Doping of Bi4Fe5O13F with pentagonal Cairo lattice with Cr and Mn: Synthesis, structure and magnetic properties |
Type |
A1 Journal article |
Year |
2017 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
87 |
Issue |
87 |
Pages |
54-60 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The substitution of Cr3+ and Mn3+ for Fe3+ in the Bi4Fe6O13F oxyfluoride featuring the magnetically frustrated pentagonal Cairo lattice is reported. Bi4Fe4.1Cr0.9O13F and BiFe4.2Mn0.8O13F have been prepared using a solid state reaction in inert atmosphere. Their crystal structures were studied with transmission electron microscopy, powder X-ray diffraction and Fe-57 Mossbauer spectroscopy (S.G. P4(2)/mbc, a = 8.27836(2)angstrom, c = 18.00330(9) angstrom, R-F = 0.031 (Bi4Fe4.1Cr0.9O13F)), a= 8.29535(3)angstrom, c= 18.0060(1)angstrom, R-F = 0.027 (Bi4Fe4.1Cr0.9O13F)). The structures are formed by infinite rutile-like chains of the edge sharing BO6 octahedra (B transition metal cations) linked by the Fe2O7 groups of two corner-sharing tetrahedra. The"voids in thus formed framework are occupied by the Bi4F tetrahedra. The Fe-57 Mossbauer spectroscopy reveals that Cr3+ and Mn3+ replace Fe3+. exclusively at the octahedral positions. The Mn- and Cr-doped compounds demonstrate antiferromagnetic ordering below T-N =165 K and 120 K, respectively. (C) 2016 Elsevier Ltd. All rights reserved. |
Address |
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Corporate Author |
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Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000392681800009 |
Publication Date |
2016-11-17 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0025-5408 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.446 |
Times cited |
1 |
Open Access |
Not_Open_Access |
Notes |
; The work has been supported by the Russian Science Foundation (grant 14-13-00680). ; |
Approved |
Most recent IF: 2.446 |
Call Number |
UA @ lucian @ c:irua:141535 |
Serial |
4498 |
Permanent link to this record |
|
|
|
Author |
Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
Title |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
Type |
A1 Journal article |
Year |
2001 |
Publication |
Materials science in semiconductor processing |
Abbreviated Journal |
Mat Sci Semicon Proc |
Volume |
4 |
Issue |
1/3 |
Pages |
109-111 |
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
Abstract |
The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved. |
Address |
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Corporate Author |
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Thesis |
|
Publisher |
|
Place of Publication |
Oxford |
Editor |
|
Language |
|
Wos |
000167727200026 |
Publication Date |
2002-10-14 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1369-8001; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.359 |
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.359; 2001 IF: 0.419 |
Call Number |
UA @ lucian @ c:irua:94967 |
Serial |
343 |
Permanent link to this record |
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|
|
Author |
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
Title |
The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures |
Type |
A1 Journal article |
Year |
2001 |
Publication |
Materials science in semiconductor processing |
Abbreviated Journal |
Mat Sci Semicon Proc |
Volume |
4 |
Issue |
1/3 |
Pages |
117-119 |
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
Abstract |
Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Oxford |
Editor |
|
Language |
|
Wos |
000167727200028 |
Publication Date |
2002-10-14 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1369-8001; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.359 |
Times cited |
6 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.359; 2001 IF: 0.419 |
Call Number |
UA @ lucian @ c:irua:94968 |
Serial |
3602 |
Permanent link to this record |
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|
Author |
Gkanatsiou, A.; Lioutas, C.B.; Frangis, N.; Polychroniadis, E.K.; Prystawko, P.; Leszczynski, M.; Altantzis, T.; Van Tendeloo, G. |
Title |
Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures |
Type |
A1 Journal article |
Year |
2019 |
Publication |
Materials science in semiconductor processing |
Abbreviated Journal |
Mat Sci Semicon Proc |
Volume |
91 |
Issue |
|
Pages |
159-166 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
AlGaN/GaN heterostructures were grown on “on-axis” and 2° off (0001) 4H-SiC substrates by metalorganic vapor phase epitaxy (MOVPE). Structural characterization was performed by transmission electron microscopy. The dislocation density, being greater in the on-axis case, is gradually reduced in the GaN layer and is forming
dislocation loops in the lower region. Steps aligned along [11̅00] in the off-axis case give rise to simultaneous defect formation. In the on-axis case, an almost zero density of steps is observed, with the main origin of defects probably being the orientation mismatch at the grain boundaries between the small not fully coalesced AlN grains. V-shaped formations are observed in the AlN nucleation layer, but are more frequent in the off-axis case, probably enhanced by the presence of steps. These V-shaped formations are completely overgrown by the GaN layer, during the subsequent deposition, presenting AlGaN areas in the walls of the defect, indicating an interdiffusion between the layers. Finally, at the AlGaN/GaN heterostructure surface in the on-axis case, V-shapes are observed, with the AlN spacer and AlGaN (21% Al) thickness on relaxed GaN exceeding the critical thickness for relaxation. On the other hand, no relaxation in the form of V-shape creation is observed in the off-axis case, probably due to the smaller AlGaN thickness (less than 21% Al). The AlN spacer layer, grown in between the heterostructure, presents a uniform thickness and clear interfaces. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
|
Language |
|
Wos |
000454537700022 |
Publication Date |
2018-11-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1369-8001 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.359 |
Times cited |
1 |
Open Access |
Not_Open_Access |
Notes |
Funding: This work was supported by the IKY Fellowships of Excellence for Postgraduate Studies in Greece-SIEMENS Program; the Greek General Secretariat for Research and Technology, contract SAE 013/8–2009SE 01380012; and the JU ENIAC Project LAST POWER Large Area silicon carbide Substrates and heteroepitaxial GaN for POWER device applications [grant number 120218]. Also part of the research leading to these results has received funding from the European Union Seventh Framework Program under Grant Agreement 312483 – ESTEEM2 (Integrated Infrastructure Initiative–I3). T.A. acknowledges financial support from the Research Foundation Flanders (FWO, Belgium) through a post-doctoral grant. |
Approved |
Most recent IF: 2.359 |
Call Number |
EMAT @ emat @UA @ admin @ c:irua:156200 |
Serial |
5149 |
Permanent link to this record |
|
|
|
Author |
Hoat, D.M.; Nguyen, D.K.; Bafekry, A.; Van On, V.; Ul Haq, B.; Rivas-Silva, J.F.; Cocoletzi, G.H. |
Title |
Strain-driven modulation of the electronic, optical and thermoelectric properties of beta-antimonene monolayer : a hybrid functional study |
Type |
A1 Journal article |
Year |
2021 |
Publication |
Materials Science In Semiconductor Processing |
Abbreviated Journal |
Mat Sci Semicon Proc |
Volume |
131 |
Issue |
|
Pages |
105878 |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
Abstract |
Electronic, optical, and thermoelectric properties of the beta-antimonene (beta-Sb) monolayer under the external biaxial strain effects are fully investigated through the first-principles calculations. The studied two-dimensional (2D) system is dynamically and structurally stable as examined via phonon spectrum and cohesive energy. At equilibrium, the beta-Sb single layer exhibits an indirect band gap of 1.310 and 1.786 eV as predicted by the PBE and HSE06 functionals, respectively. Applying external strain may induce the indirect-direct gap transition and significant variation of the energy gap. The calculated optical spectra indicate the enhancement of the optical absorption in a wide energy range from infrared to ultraviolet as induced by the applied strain. In the visible and ultraviolet regime, the absorption coefficient can reach values as large as 82.700 (10(4)/cm) and 91.458 (10(4)/cm). Results suggest that the thermoelectric performance may be improved considerably by applying proper external strain with the figure of merit reaching a value of 0.665. Our work demonstrates that the external biaxial strains may be an effective method to make the beta-Sb monolayer prospective 2D material for optoelectronic and thermoelectric applications. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
|
Wos |
000663422800002 |
Publication Date |
2021-04-23 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1369-8001 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.359 |
Times cited |
|
Open Access |
Not_Open_Access |
Notes |
|
Approved |
Most recent IF: 2.359 |
Call Number |
UA @ admin @ c:irua:179565 |
Serial |
7021 |
Permanent link to this record |
|
|
|
Author |
Potapov, P.L.; Tirry, W.; Schryvers, D.; Sivel, V.G.M.; Wu, M.-Y.; Aslanidis, D.; Zandbergen, H. |
Title |
Cross-section transmission electron microscopy characterization of the near-surface structure of medical Nitinol superelastic tubing |
Type |
A1 Journal article |
Year |
2007 |
Publication |
Journal of materials science: materials in medicine |
Abbreviated Journal |
J Mater Sci-Mater M |
Volume |
18 |
Issue |
3 |
Pages |
483-492 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
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Corporate Author |
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Thesis |
|
Publisher |
|
Place of Publication |
London |
Editor |
|
Language |
|
Wos |
000244689700009 |
Publication Date |
2007-02-27 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0957-4530;1573-4838; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.325 |
Times cited |
14 |
Open Access |
|
Notes |
Gao; Fwo |
Approved |
Most recent IF: 2.325; 2007 IF: 1.581 |
Call Number |
UA @ lucian @ c:irua:63484 |
Serial |
547 |
Permanent link to this record |
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|
Author |
Chen, Z.; Tan, Z.; Ji, G.; Schryvers, D.; Ouyang, Q.; Li, Z. |
Title |
Effect of interface evolution on thermal conductivity of vacuum hot pressed SiC/Al composites |
Type |
A1 Journal article |
Year |
2015 |
Publication |
Advanced engineering materials |
Abbreviated Journal |
Adv Eng Mater |
Volume |
17 |
Issue |
17 |
Pages |
1076-1084 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The SiC/Al composites have been fabricated by a vacuum hot pressing (VHP) process in order to study the effect of interface evolution on the global thermal conductivity (TC). By optimizing the VHP parameters of sintering temperature and time, the three different kinds of SiC/Al interface configurations, that is, non-bonded, diffusion-bonded, and reaction-bonded interfaces, are formed and identified by measurement of relative density, X-ray diffraction, scanning and (high-resolution) transmission electron microscopy. The VHPed composite sintered at 655 °C for 60 min is fully dense and presents a tightly-adhered and clean SiC/Al interface at the nanoscale, the ideal diffusion-bonded interface being the most favorable for minimizing interfacial thermal resistance, which in turn results in the highest TC of around 270 W/mK. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Weinheim |
Editor |
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Language |
|
Wos |
000357680700019 |
Publication Date |
2015-01-02 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1438-1656; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.319 |
Times cited |
9 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.319; 2015 IF: 1.758 |
Call Number |
c:irua:123000 |
Serial |
818 |
Permanent link to this record |
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|
|
Author |
Huygh, S.; Bogaerts, A.; van Duin, A.C.T.; Neyts, E.C. |
Title |
Development of a ReaxFF reactive force field for intrinsic point defects in titanium dioxide |
Type |
A1 Journal article |
Year |
2014 |
Publication |
Computational materials science |
Abbreviated Journal |
Comp Mater Sci |
Volume |
95 |
Issue |
|
Pages |
579-591 |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
A reactive ReaxFF force field is developed for studying the influence of intrinsic point defects on the chemistry with TiO2 condensed phases. The force field parameters are optimized to ab initio data for the equations of state, relative phase stabilities for titanium and titanium dioxide, potential energy differences for (TiO2)n-clusters (n = 116). Also data for intrinsic point defects in anatase were added. These data contain formation energies for interstitial titanium and oxygen vacancies, diffusion barriers of the oxygen vacancies and molecular oxygen adsorption on a reduced anatase (101) surface. Employing the resulting force field, we study the influence of concentration of oxygen vacancies and expansion or compression of an anatase surface on the diffusion of the oxygen vacancies. Also the barrier for oxygen diffusion in the subsurface region is evaluated using this force field. This diffusion barrier of 27.7 kcal/mol indicates that the lateral redistribution of oxygen vacancies on the surface and in the subsurface will be dominated by their diffusion in the subsurface, since both this barrier as well as the barriers for diffusion from the surface to the subsurface and vice versa (17.07 kcal/mol and 21.91 kcal/mol, respectively, as calculated with DFT), are significantly lower than for diffusion on the surface (61.12 kcal/mol as calculated with DFT). |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
|
Wos |
000343781700077 |
Publication Date |
2014-09-16 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0927-0256; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.292 |
Times cited |
15 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.292; 2014 IF: 2.131 |
Call Number |
UA @ lucian @ c:irua:119409 |
Serial |
682 |
Permanent link to this record |
|
|
|
Author |
Fang, C.M.; van Huis, M.A.; Zandbergen, H.W. |
Title |
Stability and structures of the CFCC-TmC phases : a first-principles study |
Type |
A1 Journal article |
Year |
2012 |
Publication |
Computational materials science |
Abbreviated Journal |
Comp Mater Sci |
Volume |
51 |
Issue |
1 |
Pages |
146-150 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The η-M6C, γ-M23C6, and π-M11C2 phases (M = Cr, Mn and Fe) have complex cubic lattices with lattice parameters of approximately 1.0 nm. They belong to the CFCC-TmC family (complex face-centered cubic transition metal carbides), display a rich variety of crystal structures, and play in important role in iron alloys and steels. Here we show that first-principles calculations predict high stability for the γ-M23C6 and η-M6C phases, and instability for the π-M11C2 phases, taking into account various compositional and structural possibilities. The calculations also show a wide variety in magnetic properties. The Cr-containing phases were found to be non-magnetic and the Fe-phases to be ferromagnetic, while the Mn-containing phases were found to be either ferrimagnetic or non-magnetic. Details of the local atomic structures, and the formation and stability of these precipitates in alloys are discussed. |
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Wos |
000296214300020 |
Publication Date |
2011-08-29 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0927-0256; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.292 |
Times cited |
18 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.292; 2012 IF: 1.878 |
Call Number |
UA @ lucian @ c:irua:93277 |
Serial |
3119 |
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Author |
Gonzalez-Garcia, A.; Lopez-Perez, W.; Rivera-Julio, J.; Peeters, F.M.; Mendoza-Estrada, V.; Gonzalez-Hernandez, R. |
Title |
Structural, mechanical and electronic properties of two-dimensional structure of III-arsenide (111) binary compounds: An ab-initio study |
Type |
A1 Journal article |
Year |
2018 |
Publication |
Computational materials science |
Abbreviated Journal |
Comp Mater Sci |
Volume |
144 |
Issue |
144 |
Pages |
285-293 |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
Abstract |
Structural, mechanical and electronic properties of two-dimensional single-layer hexagonal structures in the (111) crystal plane of IIIAs-ZnS systems (III = B, Ga and In) are studied by first-principles calculations based on density functional theory (DFT). Elastic and phonon dispersion relation display that 2D h-IIIAs systems (III = B, Ga and In) are both mechanical and dynamically stable. Electronic structures analysis show that the semiconducting nature of the 3D-IIIAs compounds is retained by their 2D single layer counterpart. Furthermore, density of states reveals the influence of sigma and pi bonding in the most stable geometry (planar or buckled) for 2D h-IIIAs systems. Calculations of elastic constants show that the Young's modulus, bulk modulus and shear modulus decrease for 2D h-IIIAs binary compounds as we move down on the group of elements of the periodic table. In addition, as the bond length between the neighboring cation-anion atoms increases, the 2D h-IIIAs binary compounds display less stiffness and more plasticity. Our findings can be used to understand the contribution of the r and p bonding in the most stable geometry (planar or buckled) for 2D h-IIIAs systems. Structural and electronic properties of h-IIIAs systems as a function of the number of layers have been also studied. It is shown that h-BAs keeps its planar geometry while both h-GAs and h-InAs retained their buckled ones obtained by their single layers. Bilayer h-IIIAs present the same bandgap nature of their counterpart in 3D. As the number of layers increase from 2 to 4, the bandgap width for layered h-IIIAs decreases until they become semimetal or metal. Interestingly, these results are different to those found for layered h-GaN. The results presented in this study for single and few-layer h-IIIAs structures could give some physical insights for further theoretical and experimental studies of 2D h-IIIV-like systems. (C) 2017 Elsevier B.V. All rights reserved. |
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Wos |
000424902300036 |
Publication Date |
2017-12-29 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0927-0256 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.292 |
Times cited |
3 |
Open Access |
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Notes |
; This work has been carried out by the financial support of Universidad del Norte and Colciencias (Administrative Department of Science, Technology and Research of Colombia) under Convocatoria 712 – Convocatoria para proyectos de investigacion en Ciencias Basicas, ano 2015, Cod: 121571250192, Contrato 110-216. ; |
Approved |
Most recent IF: 2.292 |
Call Number |
UA @ lucian @ c:irua:149897UA @ admin @ c:irua:149897 |
Serial |
4949 |
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Author |
Grubova, I.Y.; Surmeneva, M.A.; Huygh, S.; Surmenev, R.A.; Neyts, E.C. |
Title |
Effects of silicon doping on strengthening adhesion at the interface of the hydroxyapatite-titanium biocomposite : a first-principles study |
Type |
A1 Journal article |
Year |
2019 |
Publication |
Computational materials science |
Abbreviated Journal |
Comp Mater Sci |
Volume |
159 |
Issue |
159 |
Pages |
228-234 |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
In this paper we employ first-principles calculations to investigate the effect of substitutional Si doping in the amorphous calcium-phosphate (a-HAP) structure on the work of adhesion, integral charge transfer, charge density difference and theoretical tensile strengths between an a-HAP coating and amorphous titanium dioxide (a-TiO2) substrate systemically. Our calculations demonstrate that substitution of a P atom by a Si atom in a-HAP (a-Si-HAP) with the creation of OH-vacancies as charge compensation results in a significant increase of the bonding strength of the coating to the substrate. The work of adhesion of the optimized Si-doped interfaces reaches a value of up to -2.52 J m(-2), which is significantly higher than for the stoichiometric a-HAP/a-TiO2. Charge density difference analysis indicates that the dominant interactions at the interface have significant covalent character, and in particular two Ti-O and three Ca-O bonds are formed for a-Si-HAP/a-TiO2 and one Ti-O and three Ca-O bonds for a-HAP/a-TiO2. From the stress-strain curve, the Young's modulus of a-Si-HAP/a-TiO2 is calculated to be about 25% higher than that of the a-HAP/a-TiO2, and the yielding stress is about 2 times greater than that of the undoped model. Our calculations therefore demonstrate that the presence of Si in the a-HAP structure strongly alters not only the bioactivity and resorption rates, but also the mechanical properties of the a-HAP/a-TiO2 interface. The results presented here provide an important theoretical insight into the nature of the chemical bonding at the a-HAP/a-TiO2 interface, and are particularly significant for the practical medical applications of HAP-based biomaterials. |
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Wos |
000457856900023 |
Publication Date |
2018-12-18 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0927-0256 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.292 |
Times cited |
1 |
Open Access |
Not_Open_Access |
Notes |
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Approved |
Most recent IF: 2.292 |
Call Number |
UA @ admin @ c:irua:157480 |
Serial |
5272 |
Permanent link to this record |
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Author |
Schryvers, D.; de Saegher, B.; van Landuyt, J. |
Title |
Electron microscopy and diffraction study of the composition dependency of the 3R microtwinned martensite in Ni-Al |
Type |
A1 Journal article |
Year |
1991 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
26 |
Issue |
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Pages |
57-66 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
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Place of Publication |
New York, N.Y. |
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Wos |
A1991EU98500007 |
Publication Date |
0000-00-00 |
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Series Issue |
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Edition |
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ISSN |
0025-5408 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.288 |
Times cited |
11 |
Open Access |
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Notes |
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Approved |
no |
Call Number |
UA @ lucian @ c:irua:48348 |
Serial |
943 |
Permanent link to this record |
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Author |
Laffez, P.; Van Tendeloo, G.; Millange, F.; Caignaert, V.; Hervieu, M.; Raveau, B. |
Title |
Structural phase transition at low temperature, corresponding to charge ordering in the CMR perovskites LN0.5A0.5MNO3 |
Type |
A1 Journal article |
Year |
1996 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
31 |
Issue |
8 |
Pages |
905-911 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The magneto resistive perovskites Nd0.5Sr0.5MnO3 and Pr0.5Sr0.41Ca0.09MnO3 undergo a transition from anti ferromagnetic insulator to ferromagnetic metal as function of temperature. The room temperature phase is orthorhombic with the space group Imma and the cell parameters a approximate to root 2a(p), b approximate to 2a(p), and c approximate to root 2a(p). A structural phase transition related to charge ordering accompanying the transition from ferromagnetic state to antiferromagnetic state has been evidenced by low temperature electron diffraction. This transition is reversible and a new superstructure, with a P-type orthorhombic cell. and lattice parameters parameters a approximate to 2 root 2a(p), b approximate to 2a(p), and c approximate to root 2a(p), is formed. |
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Place of Publication |
New York, N.Y. |
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A1996UZ37300002 |
Publication Date |
2002-07-25 |
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Edition |
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ISSN |
0025-5408; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.288 |
Times cited |
25 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:99650 |
Serial |
3246 |
Permanent link to this record |
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Author |
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.; Dinescu, M. |
Title |
TEM study of laser induced phase transition in iron thin films |
Type |
A1 Journal article |
Year |
1994 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
29 |
Issue |
1 |
Pages |
63-71 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Laser induced phase transition from b.c.c.(alpha) to f.c.c.(gamma) iron thin films is studied by high resolution TEM. The iron film has been covered on both sides with carbon layers to protect it against oxidation. Single pulse, tau FWHM = 20ns KrF (lambda = 248nm) excimer laser irradiation was performed in air with the film on the substrate. The laser pulse acts like a heat pulse followed by a rapid quenching revealing sequential aspects of the phase transition process. The presence of a fine mixture of the alpha + gamma phases between the alpha and gamma regions of the film has been interpreted as an incomplet transformation. The results are explained by assuming that the transformation took place via a phonon drag mechanism. |
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Place of Publication |
New York, N.Y. |
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Wos |
A1994ML03000008 |
Publication Date |
2003-06-21 |
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Series Issue |
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Edition |
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ISSN |
0025-5408; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor ![sorted by Impact Factor field, descending order (down)](img/sort_desc.gif) |
2.288 |
Times cited |
2 |
Open Access |
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Notes |
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Approved |
no |
Call Number |
UA @ lucian @ c:irua:99945 |
Serial |
3488 |
Permanent link to this record |