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“Cryo-electron spectroscopic imaging, electron energy-loss spectroscopy and energy-dispersive X-ray analysis of Ag(Br,I) nano- and microcrystals”. Oleshko V, Gijbels R, Jacob W, van Daele A, Mikrochimica acta: supplementum 15, 87 (1998)
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Correlations géothermométriques des éléments-traces des hydrothermes de terrains granitiques (Bulgarie Méridionale)”. Pentcheva EN, Van 't dack L, Veldeman E, Gijbels R, Doklady na Balgarskata Akademija na Naukite 44, 85 (1992)
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Determination of the silver sulphide cluster size distribution via computer simulations”. Charlier E, Gijbels R, Van Doorselaer M, De Keyzer R page 85 (2000).
Abstract: Addition of a labile sulphur donor to light sensitive silver halide microcrystals results in the formation of a distribution of silver sulphide clusters on the crystal surface. These silver sulphide clusters enhance the efficiency of image formation during the photographic process. Their activity towards the capturing of light photons, however, is very critical to their size (aggregation number) and concentration. By incorporating gold ions into silver sulphide clusters it was possible to monitor the size distribution by measuring the amount of gold reacted. From these experiments, no evidence was found for aggregation of the reacted sulphur entities on the surface. The uptake of gold ions at different sulphur concentrations could well be fitted with a simulated size distribution when a catalyzed deposition of sulphur was assumed, with a reactivity of the surface equal to 1.0 % for the microcrystals studied. From a simulation of the silver sulphide cluster size distribution a correlation could also be found between increasing aggregation numbers and the absorption at increasing wavelengths in diffuse reflectance spectroscopy.
Keywords: H1 Book chapter; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Immune cells enhance selectivity of nanosecond-pulsed DBD plasma against tumor cells”. Lin A, Truong B, Fridman G, Friedman AA, Miller V, Plasma medicine 7, 85 (2017). http://doi.org/10.1615/PLASMAMED.2017019666
Abstract: Cancer immunotherapy is a promising strategy that engages the patient's immune system to kill cancer cells selectively while sparing normal tissue. Treatment of macrophages with a nanosecond-pulsed dielectric barrier discharge directly enhanced their cytotoxic activity against tumor cells but not normal cells. These results underscore the clinical potential of plasma for cancer immunotherapy.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1615/PLASMAMED.2017019666
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“On the quasi-random entropy of linear species”. Slanina Z, Martin JML, François JP, Gijbels R, Theochem: applications of theoretical chemistry to organic, inorganic and biological problems 99, 83 (1993)
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Mathematical modelling of an analytical glow discharge”. Bogaerts A, van Straaten M, Gijbels R KD Marketing Services, Milton Keynes, page 82 (1995).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Titanium (germano-)silicides featuring 10-9 Ω.cm2 contact resistivity and improved compatibility to advanced CMOS technology”. Yu H, Schaekers M, Chew SA, Eyeraert J-L, Dabral A, Pourtois G, Horiguchi N, Mocuta D, Collaert N, De Meyer K, 2018 18th International Workshop On Junction Technology (iwjt) , 80 (2018)
Abstract: uIn this work, we discuss three novel Ti (germano-)silicidation techniques featuring respectively the pre-contact amorphization implantation (PCAI), the TiSi co-deposition, and Ti atomic layer deposition (ALD). All three techniques form TiSix(Ge-y) contacts with ultralow contact resistivity (rho(c)) of (1-3)x10(-9) Omega.cm(2) on both highly doped n-Si and p-SiGe substrates: these techniques meet rho(c) requirement of 5-14 nm CMOS technology and feature unified CMOS contact solutions. We further discuss the compatibility of these techniques to the realistic CMOS transistor fabrication.
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Characterization of double structure tabular microcrystals of silver halide emulsions by means of electron energy-loss spectroscopy, zero-loss electron spectroscopic imaging and energy dispersive X-ray microanalysis”. Oleshko V, Gijbels R, Jacob W, Lakiere F, van Daele A, Silaev E, Kaplun L, Microscopy, microanalysis, microstructures 6, 79 (1995). http://doi.org/10.1051/mmm:1995108
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 7
DOI: 10.1051/mmm:1995108
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“Evaluation of characterization methods for thin sections of silver halide microcrystals by analytical electron microscopy”. Gregory C, Gijbels R, Jacob W, Geuens I, van Roost C, de Keyzer R, Journal of microscopy 188, 79 (1997)
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.692
Times cited: 6
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“Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation”. Ignatova VA, Lebedev OI, Wätjen U, van Vaeck L, van Landuyt J, Gijbels R, Adams F, Microchimica acta 139, 77 (2002). http://doi.org/10.1007/s006040200043
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.58
Times cited: 3
DOI: 10.1007/s006040200043
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“On the relative stabilities of the linear and triangular forms of B3N”. Slanina Z, Martin JML, François JP, Gijbels R, Chemical physics 178, 77 (1993). http://doi.org/10.1016/0301-0104(93)85052-A
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.652
Times cited: 9
DOI: 10.1016/0301-0104(93)85052-A
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“CO2-CH4 conversion and syngas formation at atmospheric pressure using a multi-electrode dielectric barrier discharge”. Ozkan A, Dufour T, Arnoult G, De Keyzer P, Bogaerts A, Reniers F, Journal of CO2 utilization 9, 74 (2015). http://doi.org/10.1016/j.jcou.2015.01.002
Abstract: The conversion of CO2 and CH4 into value-added chemicals is studied in a new geometry of a dielectric barrier discharge (DBD) with multi-electrodes, dedicated to the treatment of high gas flow rates. Gas chromatography is used to define the CO2 and CH4 conversion as well as the yields of the products of decomposition (CO, O2 and H2) and of recombination (C2H4, C2H6 and CH2O). The influence of three parameters is investigated on the conversion: the CO2 and CH4 flow rates, the plasma power and the nature of the carrier gas (argon or helium). The energy efficiency of the CO2 conversion is estimated and compared with those of similar atmospheric plasma sources. Our DBD reactor shows a good compromise between a good energy efficiency and the treatment of a large CO2 flow rate.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.292
Times cited: 57
DOI: 10.1016/j.jcou.2015.01.002
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“Electron microscopy and mass-spectrometry study of In GaAsP/InP heterostructures (p-i-n diodes) grown by liquid phase epitaxy”. Volkov VV, Luyten W, van Landuyt J, Férauge C, Oksenoid KG, Gijbels R, Vasilev MG, Shelyakin AA, Lazarev VB, Physica status solidi: A: applied research 140, 73 (1993). http://doi.org/10.1002/pssa.2211400105
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 7
DOI: 10.1002/pssa.2211400105
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“Modeling the growth of SWNTs and graphene on the atomic scale”. Neyts EC, Bogaerts A, ECS transactions 45, 73 (2012). http://doi.org/10.1149/1.3700454
Abstract: The possibility of application of nanomaterials is determined by our ability to control the properties of the materials, which are ultimately determined by their structure and hence their growth processes. We employ hybrid molecular dynamics / Monte Carlo (MD/MC) simulations to explore the growth of SWNTs and graphene on nickel as a catalyst, with the specific goal of unraveling the growth mechanisms. While the general observations are in agreement with the literature, we find a number of interesting phenomena to be operative which are crucial for the growth, and which are not accessible by MD simulations alone due to the associated time scale. Specifically, we observe metal mediated healing and restructuring processes to take place, reorganizing the carbon network during the initial nucleation step. In the case of carbon nanotube growth, this leads to the growth of tubes with a determinable chirality. In the case of graphene formation, we find that graphene is only formed at temperatures above 700 K. These results are of importance for understanding the growth mechanisms of these carbon nanomaterials on the fundamental level.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 2
DOI: 10.1149/1.3700454
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“XPS study of ion induced oxidation of silicon with and without oxygen flooding”. de Witte H, Conard T, Sporken R, Gouttebaron R, Magnee R, Vandervorst W, Caudano R, Gijbels R, , 73 (2000)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations”. Dabral A, Pourtois G, Sankaran K, Magnus W, Yu H, de de Meux AJ, Lu AKA, Clima S, Stokbro K, Schaekers M, Collaert N, Horiguchi N, Houssa M, ECS journal of solid state science and technology 7, N73 (2018). http://doi.org/10.1149/2.0041806JSS
Abstract: In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped n-type 2D and 3D semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first principles calculations with Non-Equilibrium Green functions transport simulations. The evolution of the intrinsic contact resistivity with the doping concentration is found to saturate at similar to 2 x 10(-10) Omega.cm(2) for the case of TiSi and imposes an intrinsic limit to the ultimate contact resistance achievable for n-doped Silamorphous-TiSi (aTiSi). The limit arises from the intrinsic properties of the semiconductors and of the metals such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting heavy electron effective mass metals with semiconductor helps reducing the interface intrinsic contact resistivity. This observation seems to hold true regardless of the 3D character of the semiconductor, as illustrated for the case of three 2D semiconducting materials, namely MoS2, ZrS2 and HfS2. (C) The Author(s) 2018. Published by ECS.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.787
Times cited: 2
DOI: 10.1149/2.0041806JSS
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“Mechanisms of selective nanocarbon synthesis inside carbon nanotubes”. Khalilov U, Neyts EC, Carbon 171, 72 (2021). http://doi.org/10.1016/j.carbon.2020.08.060
Abstract: The possibility of confinement effects inside a carbon nanotube provides new application opportunities, e.g., growth of novel carbon nanostructures. However, the understanding the precise role of catalystfeedstock in the nanostructure synthesis is still elusive. In our simulation-based study, we investigate the Ni-catalyzed growth mechanism of encapsulated carbon nanostructures, viz. double-wall carbon nanotube and graphene nanoribbon, from carbon and hydrocarbon growth precursors, respectively. Specifically, we find that the tube and ribbon growth is determined by a catalyst-vs-feedstock competition effect. We compare our results, i.e., growth mechanism and structure morphology with all available theoretical and experimental data. Our calculations show that all encapsulated nanostructures contain metal (catalyst) atoms and such structures are less stable than their pure counterparts. Therefore, we study the purification mechanism of these structures. In general, this study opens a possible route to the controllable synthesis of tubular and planar carbon nanostructures for today’s nanotechnology.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 6.337
DOI: 10.1016/j.carbon.2020.08.060
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“Interpretation of TOF-SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation”. Ignatova VA, Möller W, Conard T, Vandervorst W, Gijbels R, Applied physics A : materials science &, processing 81, 71 (2005). http://doi.org/10.1007/s00339-005-3239-8
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.455
Times cited: 4
DOI: 10.1007/s00339-005-3239-8
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“Recent trends in solids mass spectrometry, with special emphasis on glow discharge mass spectrometry”. Gijbels R, Bogaerts A, , 71 (1996)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“A temperature study of mixed AgBr-AgBrI tabular crystals”. Goessens C, Schryvers D, van Landuyt J, Geuens I, Gijbels R, Jacob W, de Keyzer R Hawaii, page 70 (1995).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 3
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“Plasma activation of methane for hydrogen production in a N2 rotating gliding arc warm plasma : a chemical kinetics study”. Zhang H, Wang W, Li X, Han L, Yan M, Zhong Y, Tu X, Chemical engineering journal 345, 67 (2018). http://doi.org/10.1016/J.CEJ.2018.03.123
Abstract: In this work, a chemical kinetics study on methane activation for hydrogen production in a warm plasma, i.e., N-2 rotating gliding arc (RGA), was performed for the first time to get new insights into the underlying reaction mechanisms and pathways. A zero-dimensional chemical kinetics model was developed, which showed a good agreement with the experimental results in terms of the conversion of CH4 and product selectivities, allowing us to get a better understanding of the relative significance of various important species and their related reactions to the formation and loss of CH4, H-2, and C2H2 etc. An overall reaction scheme was obtained to provide a realistic picture of the plasma chemistry. The results reveal that the electrons and excited nitrogen species (mainly N-2(A)) play a dominant role in the initial dissociation of CH4. However, the H atom induced reaction CH4+ H -> CH3+ H-2, which has an enhanced reaction rate due to the high gas temperature (over 1200 K), is the major contributor to both the conversion of CH4 and H-2 production, with its relative contributions of > 90% and > 85%, respectively, when only considering the forward reactions. The coexistence and interaction of thermochemical and plasma chemical processes in the rotating gliding arc warm plasma significantly enhance the process performance. The formation of C-2 hydrocarbons follows a nearly one-way path of C2H6 -> C2H4 -> C2H2, explaining why the selectivities of C-2 products decreased in the order of C2H2 > C2H4 > C2H6.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 6.216
Times cited: 25
DOI: 10.1016/J.CEJ.2018.03.123
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“L'analyse des eaux géothermales par spectrométrie de masse à, étincelles”. Vandelannoote R, Blommaert W, van Grieken R, Gijbels R, Spectra 2000: la revue de l'instrumentation 53, 66 (1979)
Keywords: A3 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures”. Loo R, Arimura H, Cott D, Witters L, Pourtois G, Schulze A, Douhard B, Vanherle W, Eneman G, Richard O, Favia P, Mitard J, Mocuta D, Langer R, Collaert N, ECS journal of solid state science and technology 7, P66 (2018). http://doi.org/10.1149/2.0191802JSS
Abstract: Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET and Gate All Around devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions. (C) The Author(s) 2018. Published by ECS.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.787
Times cited: 5
DOI: 10.1149/2.0191802JSS
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“Sur l'équilibre hydrogéochimique “solution –, suspension&rdquo, dans les systèmes hydrothermaux du socle cristallin”. Pentcheva EN, Veldeman E, Van 't dack L, Gijbels R, Doklady Bolgarskoi Akademii Nauk 49, 65 (1996)
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current”. Pham A-T, Zhao Q-T, Jungemann C, Meinerzhagen B, Mantl S, Sorée B, Pourtois G, Solid state electronics 65-66, 64 (2011). http://doi.org/10.1016/j.sse.2011.06.021
Abstract: Strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs are investigated including important aspects like CV characteristics, mobility, and ON current. The simulations are based on the self-consistent solution of 6 × 6 k · p Schrödinger Equation, multi subband Boltzmann Transport Equation and Poisson Equation, and capture size quantization, strain, crystallographic orientation, and SiGe alloy effects on a solid physical basis. The simulation results are validated by comparison with different experimental data sources. The simulation results show that the strained SiGe HOI PMOSFET with (1 1 0) surface orientation has a higher gate capacitance and a much higher mobility and ON current compared to a similar device with the traditional (0 0 1) surface orientation.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.58
Times cited: 2
DOI: 10.1016/j.sse.2011.06.021
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“Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems”. Goux L, Fantini A, Govoreanu B, Kar G, Clima S, Chen Y-Y, Degraeve R, Wouters DJ, Pourtois G, Jurczak M, ECS solid state letters 1, 63 (2012). http://doi.org/10.1149/2.003204ssl
Abstract: In this letter, we address the bipolar resistive switching phenomenology in scaled TiN\HfO2\Hf cells. By means of stack engineering using a thin Al2O3 layer inserted either at the TiN\HfO2 or at the Hf\HfO2 interface, we demonstrate that the reset operation takes place close to the TiNanode. Due to the increase of the oxygen-vacancy profile from the TiN to the Hf interface, the filament-confining and wide band-gap Al2O3 layer should indeed be engineered at the interface with the TiN electrode in order to further improve the switching control and to allow reaching larger state resistances. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.003204ssl] All rights reserved.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.184
Times cited: 11
DOI: 10.1149/2.003204ssl
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“Can plasma spectrochemistry assist in improving the accuracy of chemical analysis?”.Adams F, Adriaens A, Bogaerts A, Analytica chimica acta 456, 63 (2002). http://doi.org/10.1016/S0003-2670(02)00010-7
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.95
Times cited: 6
DOI: 10.1016/S0003-2670(02)00010-7
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“Modeling of gas discharge plasmas: What can we learn from it?”.Bogaerts A, de Bleecker K, Kolev I, Madani M, Surface and coatings technology 200, 62 (2005). http://doi.org/10.1016/j.surfcoat.2005.02.057
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.589
Times cited: 11
DOI: 10.1016/j.surfcoat.2005.02.057
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“Application of neural networks in image analysis: the classification of geometrical shapes”. Geuens I, Nys B, Gijbels R, Jacob W, CC-AI: the journal for the integrated study of artificial intelligence, cognitive science and applied epistemology 10, 61 (1993)
Keywords: A3 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Corrélations chimiques-géothermométriques des paramètres microchimiques des hydrothermes profonds”. Pentcheva E, Van 't dack L, Veldeman E, Gijbels R, Comptes rendus de l'Académie bulgare des sciences 49, 61 (1996)
Keywords: A3 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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