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Author Mogg, L.; Hao, G.-P.; Zhang, S.; Bacaksiz, C.; Zou, Y.; Haigh, S.J.; Peeters, F.M.; Geim, A.K.; Lozada-Hidalgo, M.
Title Atomically thin micas as proton-conducting membranes Type A1 Journal article
Year 2019 Publication Nature nanotechnology Abbreviated Journal Nat Nanotechnol
Volume 14 Issue 10 Pages 962-+
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract Monolayers of graphene and hexagonal boron nitride (hBN) are highly permeable to thermal protons1,2. For thicker two-dimensional (2D) materials, proton conductivity diminishes exponentially, so that, for example, monolayer MoS2 that is just three atoms thick is completely impermeable to protons1. This seemed to suggest that only one-atom-thick crystals could be used as proton-conducting membranes. Here, we show that few-layer micas that are rather thick on the atomic scale become excellent proton conductors if native cations are ion-exchanged for protons. Their areal conductivity exceeds that of graphene and hBN by one to two orders of magnitude. Importantly, ion-exchanged 2D micas exhibit this high conductivity inside the infamous gap for proton-conducting materials3, which extends from ∼100 °C to 500 °C. Areal conductivity of proton-exchanged monolayer micas can reach above 100 S cm−2 at 500 °C, well above the current requirements for the industry roadmap4. We attribute the fast proton permeation to ~5-Å-wide tubular channels that perforate micas’ crystal structure, which, after ion exchange, contain only hydroxyl groups inside. Our work indicates that there could be other 2D crystals5 with similar nanometre-scale channels, which could help close the materials gap in proton-conducting applications.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000488977100016 Publication Date 2019-09-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-3387; 1748-3395 ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 38.986 Times cited 44 Open Access
Notes ; The work was supported by the Lloyd's Register Foundation, the Engineering and Physical Sciences Research Council (EPSRC)-EP/N010345/1, EP/M010619/1 and EP/ P009050/1, the European Research Council, the Graphene Flagship and the Royal Society. M.L.-H. acknowledges a Leverhulme Early Career Fellowship, G.-P.H. acknowledges a Marie Curie International Incoming Fellowship, and L.M. acknowledges the EPSRC NOWNano programme for funding. Y.Z. acknowledges the assistance of Eric Prestat in TEM specimen preparation. Computational resources were provided by the TUBITAK ULAKBIM High Performance and Grid Computing Center (TR-Grid e-Infrastructure). ; Approved Most recent IF: 38.986
Call Number UA @ admin @ c:irua:163589 Serial 5407
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Author Bafekry, A.; Stampfl, C.; Ghergherehchi, M.
Title Strain, electric-field and functionalization induced widely tunable electronic properties in MoS2/BC3, /C3N and / C3N4 van der Waals heterostructures Type A1 Journal article
Year 2020 Publication Nanotechnology (Bristol. Print) Abbreviated Journal
Volume Issue Pages 295202 pp
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract In this paper, the effect of BC3, C3N and C3N4BC(3) and MoS2/C(3)N4 heterostructures are direct semiconductors with band gaps of 0.4 and 1.74 eV, respectively, while MoS2/C3N is a metal. Furthermore, the influence of strain and electric field on the electronic structure of these van der Waals heterostructures is investigated. The MoS2/BC3 heterostructure, for strains larger than -4%, transforms it into a metal where the metallic character is maintained for strains larger than -6%. The band gap decreases with increasing strain to 0.35 eV (at +2%), while for strain (>+6%) a direct-indirect band gap transition is predicted to occur. For the MoS2/C3N heterostructure, the metallic character persists for all strains considered. On applying an electric field, the electronic properties of MoS2/C3N4 are modified and its band gap decreases as the electric field increases. Interestingly, the band gap reaches 30 meV at +0.8 V/angstrom, and with increase above +0.8 V/angstrom, a semiconductor-to-metal transition occurs. Furthermore, we investigated effects of semi- and full-hydrogenation of MoS2/C3N and we found that it leads to a metallic and semiconducting character, respectively.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000532366000001 Publication Date 2020-04-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 0957-4484 Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 19 Open Access
Notes ; This work has supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIT)(NRF-2017R1A2B2011989). ; Approved Most recent IF: NA
Call Number UA @ admin @ c:irua:169523 Serial 6444
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Author Mehta, A.N.; Gauquelin, N.; Nord, M.; Orekhov, A.; Bender, H.; Cerbu, D.; Verbeeck, J.; Vandervorst, W.
Title Unravelling stacking order in epitaxial bilayer MX₂ using 4D-STEM with unsupervised learning Type A1 Journal article
Year 2020 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 31 Issue 44 Pages 445702
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Following an extensive investigation of various monolayer transition metal dichalcogenides (MX2), research interest has expanded to include multilayer systems. In bilayer MX2, the stacking order strongly impacts the local band structure as it dictates the local confinement and symmetry. Determination of stacking order in multilayer MX(2)domains usually relies on prior knowledge of in-plane orientations of constituent layers. This is only feasible in case of growth resulting in well-defined triangular domains and not useful in-case of closed layers with hexagonal or irregularly shaped islands. Stacking order can be discerned in the reciprocal space by measuring changes in diffraction peak intensities. Advances in detector technology allow fast acquisition of high-quality four-dimensional datasets which can later be processed to extract useful information such as thickness, orientation, twist and strain. Here, we use 4D scanning transmission electron microscopy combined with multislice diffraction simulations to unravel stacking order in epitaxially grown bilayer MoS2. Machine learning based data segmentation is employed to obtain useful statistics on grain orientation of monolayer and stacking in bilayer MoS2.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000561424400001 Publication Date 2020-07-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.5 Times cited 13 Open Access OpenAccess
Notes ; J.V. acknowledges funding from FLAG-ERA JTC2017 project 'Graph-Eye'. N.G. acknowledges funding from GOA project 'Solarpaint' of the University of Antwerp. This project has received funding from the European Union's Horizon 2020 research and innovation programme under Grant Agreement No. 823717-ESTEEM3. 4D STEM data was acquired on a hybrid pixel detector funded with a Hercules fund 'Direct electron detector for soft matter TEM' from the Flemish Government. M. N. acknowledges funding from a Marie Curie Fellowship agreement No 838001. We thank Dr Jiongjiong Mo and Dr Benjamin Groven for developing the CVD-MoS<INF>2</INF> growth on sapphire and providing the material used in this article. ; Approved Most recent IF: 3.5; 2020 IF: 3.44
Call Number UA @ admin @ c:irua:171119 Serial 6649
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Author Bafekry, A.; Shahrokhi, M.; Shafique, A.; Jappor, H.R.; Shojaei, F.; Feghhi, S.A.H.; Ghergherehchi, M.; Gogova, D.
Title Two-dimensional carbon nitride C₆N nanosheet with egg-comb-like structure and electronic properties of a semimetal Type A1 Journal article
Year 2021 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 32 Issue 21 Pages 215702
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract In this study, the structural, electronic and optical properties of theoretically predicted C6N monolayer structure are investigated by means of Density Functional Theory-based First-Principles Calculations. Phonon band dispersion calculations and molecular dynamics simulations reveal the dynamical and thermal stability of the C6N single-layer structure. We found out that the C6N monolayer has large negative in-plane Poisson's ratios along both X and Y direction and the both values are almost four times that of the famous-pentagraphene. The electronic structure shows that C6N monolayer is a semi-metal and has a Dirac-point in the BZ. The optical analysis using the random phase approximation method constructed over HSE06 illustrates that the first peak of absorption coefficient of the C6N monolayer along all polarizations is located in the IR range of spectrum, while the second absorption peak occurs in the visible range, which suggests its potential applications in optical and electronic devices. Interestingly, optically anisotropic character of this system is highly desirable for the design of polarization-sensitive photodetectors. Thermoelectric properties such as Seebeck coefficient, electrical conductivity, electronic thermal conductivity and power factor are investigated as a function of carrier doping at temperatures 300, 400, and 500 K. In general, we predict that the C6N monolayer could be a new platform for study of novel physical properties in two-dimensional semi-metal materials, which may provide new opportunities to realize high-speed low-dissipation devices.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000624531500001 Publication Date 2020-12-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited Open Access OpenAccess
Notes Approved Most recent IF: 3.44
Call Number UA @ admin @ c:irua:176648 Serial 6740
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Author Osca, J.; Moors, K.; Sorée, B.; Serra, L.
Title Fabry-Perot interferometry with gate-tunable 3D topological insulator nanowires Type A1 Journal article
Year 2021 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 32 Issue 43 Pages 435002
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract Three-dimensional topological insulator (3D TI) nanowires display remarkable magnetotransport properties that can be attributed to their spin-momentum-locked surface states such as quasiballistic transport and Aharonov-Bohm oscillations. Here, we focus on the transport properties of a 3D TI nanowire with a gated section that forms an electronic Fabry-Perot (FP) interferometer that can be tuned to act as a surface-state filter or energy barrier. By tuning the carrier density and length of the gated section of the wire, the interference pattern can be controlled and the nanowire can become fully transparent for certain topological surface-state input modes while completely filtering out others. We also consider the interplay of FP interference with an external magnetic field, with which Klein tunneling can be induced, and transverse asymmetry of the gated section, e.g. due to a top-gated structure, which displays an interesting analogy with Rashba nanowires. Due to its rich conductance phenomenology, we propose a 3D TI nanowire with gated section as an ideal setup for a detailed transport-based characterization of 3D TI nanowire surface states near the Dirac point, which could be useful towards realizing 3D TI nanowire-based topological superconductivity and Majorana bound states.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000682173800001 Publication Date 2021-07-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited Open Access Not_Open_Access
Notes Approved Most recent IF: 3.44
Call Number UA @ admin @ c:irua:180487 Serial 6990
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Author Miranda, L.P.; da Costa, D.R.; Peeters, F.M.; Costa Filho, R.N.
Title Vacancy clustering effect on the electronic and transport properties of bilayer graphene nanoribbons Type A1 Journal article
Year 2023 Publication Nanotechnology Abbreviated Journal
Volume 34 Issue 5 Pages 055706-55710
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract Experimental realizations of two-dimensional materials are hardly free of structural defects such as e.g. vacancies, which, in turn, modify drastically its pristine physical defect-free properties. In this work, we explore effects due to point defect clustering on the electronic and transport properties of bilayer graphene nanoribbons, for AA and AB stacking and zigzag and armchair boundaries, by means of the tight-binding approach and scattering matrix formalism. Evident vacancy concentration signatures exhibiting a maximum amplitude and an universality regardless of the system size, stacking and boundary types, in the density of states around the zero-energy level are observed. Our results are explained via the coalescence analysis of the strong sizeable vacancy clustering effect in the system and the breaking of the inversion symmetry at high vacancy densities, demonstrating a similar density of states for two equivalent degrees of concentration disorder, below and above the maximum value.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000886630000001 Publication Date 2022-11-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.5 Times cited 1 Open Access OpenAccess
Notes Approved Most recent IF: 3.5; 2023 IF: 3.44
Call Number UA @ admin @ c:irua:192030 Serial 7350
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Author Badalyan, S.M.; Peeters, F.M.
Title Transport of magnetic edge states in a quantum wire exposed to a non-homogeneous magnetic field Type A1 Journal article
Year 2001 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 12 Issue Pages 570-576
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000173305300041 Publication Date 2002-08-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 5 Open Access
Notes Approved Most recent IF: 3.44; 2001 IF: 1.621
Call Number UA @ lucian @ c:irua:37276 Serial 3727
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Author Tao, X.Y.; Zhang, X.B.; Cheng, J.-P.; Liu, F.; Li, Y.; Van Tendeloo, G.
Title Controllable synthesis of novel one-dimensional carbon nanomaterials on an alkali-element-modified Cu catalyst Type A1 Journal article
Year 2006 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 17 Issue 1 Pages 224-226
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000234959200039 Publication Date 2005-12-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 4 Open Access
Notes Approved Most recent IF: 3.44; 2006 IF: 3.037
Call Number UA @ lucian @ c:irua:56629 Serial 501
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Author Du, G.; Van Tendeloo, G.
Title Preparation and structure analysis of Gd(OH)3 nanorods Type A1 Journal article
Year 2005 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 16 Issue 4 Pages 595-597
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000228949300052 Publication Date 2005-03-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 28 Open Access
Notes Iap V-1 Approved Most recent IF: 3.44; 2005 IF: 2.993
Call Number UA @ lucian @ c:irua:59057 Serial 2700
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Author Krsmanovic, R.; Lebedev, O.I.; Speghini, A.; Bettinelli, M.; Polizzi, S.; Van Tendeloo, G.
Title Structural characterization and luminescence properties of nanostructured lanthanide-doped Sc2O3 prepared by propellant synthesis Type A1 Journal article
Year 2006 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 17 Issue 11 Pages 2805-2812
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000238250300038 Publication Date 2006-05-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 22 Open Access
Notes IAP5-01; PRIN/Cofin Approved Most recent IF: 3.44; 2006 IF: 3.037
Call Number UA @ lucian @ c:irua:60046 Serial 3217
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Author Robin, I.-C.; Aichele, T.; Bougerol, C.; André, R.; Tatarenko, S.; Bellet-Amalric, E.; van Daele, B.; Van Tendeloo, G.
Title CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions Type A1 Journal article
Year 2007 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 18 Issue 26 Pages 265701,1-11
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000247103500012 Publication Date 2007-06-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 8 Open Access
Notes Approved Most recent IF: 3.44; 2007 IF: 3.310
Call Number UA @ lucian @ c:irua:64756 Serial 303
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Author de Witte, K.; Cool, P.; de Witte, I.; Ruys, L.; Rao, J.; Van Tendeloo, G.; Vansant, E.F.
Title Multistep loading of titania nanoparticles in the mesopores of SBA-15 for enhanced photocatalytic activity Type A1 Journal article
Year 2007 Publication Journal of nanoscience and nanotechnology Abbreviated Journal J Nanosci Nanotechno
Volume 7 Issue 7 Pages 2511-2515
Keywords A1 Journal article; Laboratory of adsorption and catalysis (LADCA); Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000246347700042 Publication Date 2007-04-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1533-4880;0000-0000; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 1.483 Times cited 13 Open Access
Notes Approved Most recent IF: 1.483; 2007 IF: 1.987
Call Number UA @ lucian @ c:irua:64773 Serial 2240
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Author Malesevic, A.; Vitchev, R.; Schouteden, K.; Volodin, A.; Zhang, L.; Van Tendeloo, G.; Vanhulsel, A.; van Haesendonck, C.
Title Synthesis of few-layer graphene via microwave plasma-enhanced chemical vapour deposition Type A1 Journal article
Year 2008 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 19 Issue 30 Pages 305604,1-6
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000256838400014 Publication Date 2008-06-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 309 Open Access
Notes Approved Most recent IF: 3.44; 2008 IF: 3.446
Call Number UA @ lucian @ c:irua:70224 Serial 3455
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Author Milošević, M.M.; Tadić, M.; Peeters, F.M.
Title Effects of lateral asymmetry on electronic structure of strained semiconductor nanorings in a magnetic field Type A1 Journal article
Year 2008 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 19 Issue 45 Pages
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The influence of lateral asymmetry on the electronic structure and optical transitions in elliptical strained InAs nanorings is analyzed in the presence of a perpendicular magnetic field. Two-dimensional rings are assumed to have elliptical inner and outer boundaries oriented in mutually orthogonal directions. The influence of the eccentricity of the ring on the energy levels is analyzed. For large eccentricity of the ring, we do not find any AharonovBohm effect, in contrast to circular rings. Rather, the single-particle states of the electrons and the holes are localized as in two laterally coupled quantum dots formed in the lobes of the nanoring. Our work indicates that the control of shape is important for the existence of the AharonovBohm effect in semiconductor nanorings.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000259922000016 Publication Date 2008-10-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 11 Open Access
Notes Approved Most recent IF: 3.44; 2008 IF: 3.446
Call Number UA @ lucian @ c:irua:76874 Serial 865
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Author Wang, M.; Chang, K.; Wang, L.G.; Dai, N.; Peeters, F.M.
Title Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires Type A1 Journal article
Year 2009 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 20 Issue 36 Pages 365202,1-365202,8
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spinorbit interaction (RSOI) and the Dresselhaus spinorbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000269077000003 Publication Date 2009-08-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 14 Open Access
Notes Approved Most recent IF: 3.44; 2009 IF: 3.137
Call Number UA @ lucian @ c:irua:78933 Serial 588
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Author Zhang, Z.Z.; Wu, Z.H.; Chang, K.; Peeters, F.M.
Title Resonant tunneling through S- and U-shaped graphene nanoribbons Type A1 Journal article
Year 2009 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 20 Issue 41 Pages 415203,1-415203,7
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We theoretically investigate resonant tunneling through S- and U-shaped nanostructured graphene nanoribbons. A rich structure of resonant tunneling peaks is found emanating from different quasi-bound states in the middle region. The tunneling current can be turned on and off by varying the Fermi energy. Tunability of resonant tunneling is realized by changing the width of the left and/or right leads and without the use of any external gates.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000269930100007 Publication Date 2009-09-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 32 Open Access
Notes Approved Most recent IF: 3.44; 2009 IF: 3.137
Call Number UA @ lucian @ c:irua:79311 Serial 2893
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Author Jehanathan, N.; Lebedev, O.; Gélard, I.; Dubourdieu, C.; Van Tendeloo, G.
Title Structure and defect characterization of multiferroic <tex>ReMnO$3 films and multilayers by TEM Type A1 Journal article
Year 2010 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 21 Issue 7 Pages 075705,1-075705,11
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Epitaxial rare earth manganite thin films (ReMnO3; Re = Tb, Ho, Er, and Y) and multilayers were grown by liquid injection metal organic chemical vapor deposition (MOCVD) on YSZ(111) and the same systems were grown c-oriented on Pt(111) buffered Si substrates. They have been structurally investigated by electron diffraction (ED) and high resolution transmission electron microscopy (HRTEM). Nanodomains of secondary orientation are observed in the hexagonal YMnO3 films. They are related to a YSZ(111) and Pt(111) misorientation. The epitaxial film thickness has an influence on the defect formation. TbO2 and Er2O3 inclusions are observed in the TbMnO3 and ErMnO3 films respectively. The structure and orientation of these inclusions are correlated to the resembling symmetry and structure of film and substrate. The type of defect formed in the YMnO3/HoMnO3 and YMnO3/ErMnO3 multilayers is also influenced by the type of substrate they are grown on. In our work, atomic growth models for the interface between the film/substrate are proposed and verified by comparison with observed and computer simulated images.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000273824500018 Publication Date 2010-01-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 15 Open Access
Notes Esteem 026019 Approved Most recent IF: 3.44; 2010 IF: 3.652
Call Number UA @ lucian @ c:irua:80436 Serial 3274
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Author Margueritat, J.; Gonzalo, J.; Afonso, C.N.; Hörmann, U.; Van Tendeloo, G.; Mlayah, A.; Murray, D.B.; Saviot, L.; Zhou, Y.; Hong, M.H.; Luk'yanchuk, B.S.
Title Surface enhanced Raman scattering of silver sensitized cobalt nanoparticles in metaldielectric nanocomposites Type A1 Journal article
Year 2008 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 19 Issue 37 Pages 375701,1-375701,4
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We report the preparation of a new type of nanocomposite containing cobalt and silver nanoparticles organized in parallel layers with a well controlled separation. This arrangement allows the observation of an enhanced low-frequency Raman signal at the vibration frequency of cobalt nanoparticles excited through the surface plasmons of silver nanoparticles. Numerical simulations of the electric field confirm the emergence of hot spots when the separation between silver and cobalt nanoparticles is small enough.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000258385600018 Publication Date 2008-08-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 11 Open Access
Notes Approved Most recent IF: 3.44; 2008 IF: 3.446
Call Number UA @ lucian @ c:irua:81873 Serial 3396
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Author Orlinskii, S.B.; Bogomolov, R.S.; Kiyamova, A.M.; Yavkin, B.V.; Mamin, G.M.; Turner, S.; Van Tendeloo, G.; Shiryaev, A.A.; Vlasov, I.I.; Shenderova, O.
Title Identification of substitutional nitrogen and surface paramagnetic centers in nanodiamond of dynamic synthesis by electron paramagnetic resonance Type A1 Journal article
Year 2011 Publication Nanoscience and nanotechnology letters Abbreviated Journal Nanosci Nanotech Let
Volume 3 Issue 1 Pages 63-67
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Production of nanodiamond particles containing substitutional nitrogen is important for a wide variety of advanced applications. In the current work nanodiamond particles synthesized from a mixture of graphite and hexogen were analyzed to determine the presence of substitutional nitrogen using pulsed electron paramagnetic resonance (EPR) spectroscopy. Nitrogen paramagnetic centers in the amount of 1.2 ppm have been identified. The spin relaxation characteristics for both nitrogen and surface defects are also reported. A new approach for efficient depletion of the strong non-nitrogen EPR signal in nanodiamond material by immersing nanodiamond particles into ice matrix is suggested. This approach allows an essential decrease of the spin relaxation time of the dominant non-nitrogen defects, while preserving the substitutional nitrogen spin relaxation time.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000293211200012 Publication Date 2011-09-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1941-4900;1941-4919; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 1.889 Times cited 14 Open Access
Notes Approved Most recent IF: 1.889; 2011 IF: 0.528
Call Number UA @ lucian @ c:irua:91943 Serial 1548
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Author Talgorn, E.; Gao, Y.; Aerts, M.; Kunneman, L.T.; Schins, J.M.; Savenije, T.J.; van Huis, M.A.; van der Zant, H.S.J.; Houtepen, A.J.; Siebbeles, L.D.A.
Title Unity quantum yield of photogenerated charges and band-like transport in quantum-dot solids Type A1 Journal article
Year 2011 Publication Nature nanotechnology Abbreviated Journal Nat Nanotechnol
Volume 6 Issue 11 Pages 733-739
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Solid films of colloidal quantum dots show promise in the manufacture of photodetectors and solar cells. These devices require high yields of photogenerated charges and high carrier mobilities, which are difficult to achieve in quantum-dot films owing to a strong electronhole interaction and quantum confinement. Here, we show that the quantum yield of photogenerated charges in strongly coupled PbSe quantum-dot films is unity over a large temperature range. At high photoexcitation density, a transition takes place from hopping between localized states to band-like transport. These strongly coupled quantum-dot films have electrical properties that approach those of crystalline bulk semiconductors, while retaining the size tunability and cheap processing properties of colloidal quantum dots.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000296737300012 Publication Date 2011-09-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-3387;1748-3395; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 38.986 Times cited 129 Open Access
Notes Approved Most recent IF: 38.986; 2011 IF: 27.270
Call Number UA @ lucian @ c:irua:93296 Serial 3813
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Author Ray, S.; Kolen'ko, Y.V.; Kovnir, K.A.; Lebedev, O.I.; Turner, S.; Chakraborty, T.; Erni, R.; Watanabe, T.; Van Tendeloo, G.; Yoshimura, M.; Itoh, M.
Title Defect controlled room temperature ferromagnetism in Co-doped barium titanate nanocrystals Type A1 Journal article
Year 2012 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 23 Issue 2 Pages 025702,1-025702,10
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Defect mediated high temperature ferromagnetism in oxide nanocrystallites is the central feature of this work. Here, we report the development of room temperature ferromagnetism in nanosized Co-doped barium titanate particles with a size of around 14 nm, synthesized by a solvothermal drying method. A combination of x-ray diffraction with state-of-the-art electron microscopy techniques confirms the intrinsic doping of Co into BaTiO3. The development of the room temperature ferromagnetism was tracked down to the different donor defects, namely hydroxyl groups at the oxygen site (\mathrm {OH}\mathrm {(O)}
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000298409000011 Publication Date 2011-12-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 19 Open Access
Notes Esteem 026019; Fwo Approved Most recent IF: 3.44; 2012 IF: 3.842
Call Number UA @ lucian @ c:irua:93636 Serial 614
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Author Wu, Z.; Zhang, Z.Z.; Chang, K.; Peeters, F.M.
Title Quantum tunneling through graphene nanorings Type A1 Journal article
Year 2010 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 21 Issue 18 Pages 185201
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We investigate theoretically quantum transport through graphene nanorings in the presence of a perpendicular magnetic field. Our theoretical results demonstrate that the graphene nanorings behave like a resonant tunneling device, contrary to the Aharonov-Bohm oscillations found in conventional semiconductor rings. The resonant tunneling can be tuned by the Fermi energy, the size of the central part of the graphene nanorings and the external magnetic field.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000276672100005 Publication Date 2010-04-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 34 Open Access
Notes ; This work is partly supported by the NSFC, the project from the Chinese Academy of Sciences, the bilateral project between China and Sweden, the Flemish Science Foundation (FWLO-Vl) and the Belgium Science Policy (IAP). ; Approved Most recent IF: 3.44; 2010 IF: 3.652
Call Number UA @ lucian @ c:irua:95614 Serial 2796
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Author Bittencourt, C.; Hitchock, A.P.; Ke, X.; Van Tendeloo, G.; Ewels, C.P.; Guttmann, P.
Title X-ray absorption spectroscopy by full-field X-ray microscopy of a thin graphite flake: Imaging and electronic structure via the carbon K-edge Type A1 Journal article
Year 2012 Publication Beilstein journal of nanotechnology Abbreviated Journal Beilstein J Nanotech
Volume 3 Issue Pages 345-350
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract We demonstrate that near-edge X-ray-absorption fine-structure spectra combined with full-field transmission X-ray microscopy can be used to study the electronic structure of graphite flakes consisting of a few graphene layers. The flake was produced by exfoliation using sodium cholate and then isolated by means of density-gradient ultracentrifugation. An image sequence around the carbon K-edge, analyzed by using reference spectra for the in-plane and out-of-plane regions of the sample, is used to map and spectrally characterize the flat and folded regions of the flake. Additional spectral features in both π and σ regions are observed, which may be related to the presence of topological defects. Doping by metal impurities that were present in the original exfoliated graphite is indicated by the presence of a pre-edge signal at 284.2 eV.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000303243400001 Publication Date 2012-04-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2190-4286; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
Impact Factor 3.127 Times cited 15 Open Access
Notes Approved Most recent IF: 3.127; 2012 IF: 2.374
Call Number UA @ lucian @ c:irua:97703 Serial 3924
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