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Description of the thermalization process of the sputtered atoms in a glow discharge using a 3-dimensional Monte Carlo method”. Bogaerts A, van Straaten M, Gijbels R, Journal of applied physics 77, 1868 (1995). http://doi.org/10.1063/1.358887
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Influence of recent volcanism on the geochemical behaviour of trace elements and gases in deep granitic hydrothermal systems, southwest Bulgaria”. Pentcheva EN, Van 't dack L, Gijbels R, , 383 (1995)
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Gold mobility in waters from temperate regions”. Cidu R, Fanfani L, Shand P, Edmunds WM, Van 't dack L, Gijbels R, (1995)
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Hydrogeochemical exploration for gold in the Osilo area, Sardinia, Italy”. Cidu R, Fanfani L, Shand P, Edmunds WM, Van 't dack L, Gijbels R, Applied geochemistry 10, 517 (1995). http://doi.org/10.1016/0883-2927(95)00022-4
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Atomic mass spectrometry”. Gijbels R, Oksenoid KG Academic Press, London, page 2839 (1995).
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Characterization of complex silver halide photographic systems by means of analytical electron microscopy”. Oleshko V, Gijbels R, Jacob W, Alfimov M, Microbeam analysis 4, 1 (1995)
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High-resolution electron microscopy and electron energy-loss spectroscopy of giant palladium clusters”. Oleshko V, Volkov V, Gijbels R, Jacob W, Vargaftik M, Moiseev I, Van Tendeloo G, Zeitschrift für Physik : D : atoms, molecules and clusters 34, 283 (1995). http://doi.org/10.1007/BF01437574
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Accurate ab initio quartic force fields for the sulfur compounds H2S, CS2, OCS and CS”. Martin JML, François JP, Gijbels R, Journal of molecular spectroscopy 169, 445 (1995). http://doi.org/10.1006/jmsp.1995.1037
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Structures and thermochemistry of B3N3 and B4N4”. Martin JML, El-Yazal J, François JP, Gijbels R, Chemical physics letters 232, 289 (1995). http://doi.org/10.1016/0009-2614(94)01336-T
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The structure and energetics of B3N2, B2N3, and BN4: symmetry breaking effects in B3N2”. Martin JML, El-Yazal J, François JP, Gijbels R, Molecular physics 85, 527 (1995). http://doi.org/10.1080/00268979500101281
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Fluorinesilicon surface reactions during cryogenic and near room temperature etching”. Tinck S, Neyts EC, Bogaerts A, The journal of physical chemistry: C : nanomaterials and interfaces 118, 30315 (2014). http://doi.org/10.1021/jp5108872
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Accurate ab initio quartic force fields and thermochemistry of FNO and CINO”. Martin JML, François JP, Gijbels R, The journal of physical chemistry 98, 11394 (1994). http://doi.org/10.1021/j100095a022
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Ab initio study of the X2\Sigma+ and A 2\Pi states of the SiN radical”. Cai ZL, Martin JML, François JP, Gijbels R, Chemical physics letters 252, 398 (1996). http://doi.org/10.1016/0009-2614(96)00183-2
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Chemical characterization of neo-ceramic powders by time-of-flight and Fourier transform laser microprobe mass spectrometry”. Struyf H, van Vaeck L, Kennis P, Gijbels R, van Grieken R, Rapid communications in mass spectrometry 10, 699 (1996). http://doi.org/10.1002/(SICI)1097-0231(199604)10:6<699::AID-RCM521>3.0.CO;2-8
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Setareh M (2014) Computational study of CH4 and CF4 conversion in presence of N2 and O2 in plasma discharges applied. Antwerpen
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Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates”. Scalise E, Houssa M, Cinquanta E, Grazianetti C, van den Broek B, Pourtois G, Stesmans A, Fanciulli M, Molle A, 2D materials 1, 011010 (2014). http://doi.org/10.1088/2053-1583/1/1/011010
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Alternative metals for advanced interconnects”. Adelmann C, Wen LG, Peter AP, Pourtois G, et al, 2014 Ieee International Interconnect Technology Conference / Advanced Metallization Conference (iitc/amc) , 173 (2014)
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Exploring alternative metals to Cu and W for interconnects : an ab initio Insight”. Sankaran K, Clima S, Mees M, Adelmann C, Tokei Z, Pourtois G, 2014 Ieee International Interconnect Technology Conference / Advanced Metallization Conference (iitc/amc) , 193 (2014)
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The role of ions in plasma catalytic carbon nanotube growth : a review”. Neyts EC, Frontiers of Chemical Science and Engineering 9, 154 (2015). http://doi.org/10.1007/s11705-015-1515-5
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Somers W (2015) Atomic scale simulations of the interactions of plasma species on nickel catalyst surfaces. Antwerpen
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Neyts E (2014) Algemene chemie : van atomen tot thermodynamica. Acco, Leuven, 317 p
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First-principles material modeling of solid-state electrolytes with the spinel structure”. Mees MJ, Pourtois G, Rosciano F, Put B, Vereecken PM, Stesmans A, Physical chemistry, chemical physics (2014). http://doi.org/10.1039/C3CP54610A
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Multi-level molecular modelling for plasma medicine”. Bogaerts A, Khosravian N, Van der Paal J, Verlackt CCW, Yusupov M, Kamaraj B, Neyts EC, Journal Of Physics D-Applied Physics 49, 054002 (2016)
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Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor : structure, tail states and strain effects”. de de Meux AJ, Pourtois G, Genoe J, Heremans P, Journal of physics: D: applied physics 48, 435104 (2015). http://doi.org/10.1088/0022-3727/48/43/435104
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What modeling reveals about the properties of an inductively coupled plasma”. Bogaerts A, Aghaei M, Spectroscopy 31, 52 (2016)
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Size-dependent strain and surface energies of gold nanoclusters”. Ali S, Myasnichenko VS, Neyts EC, Physical chemistry, chemical physics 18, 792 (2016). http://doi.org/10.1039/c5cp06153a
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Glow discharge optical spectroscopy and mass spectrometry”. Bogaerts A John Wiley & Sons, Chichester, page 1 (2016).
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Multilayer MoS2 growth by metal and metal oxide sulfurization”. Heyne MH, Chiappe D, Meersschaut J, Nuytten T, Conard T, Bender H, Huyghebaert C, Radu IP, Caymax M, de Marneffe JF, Neyts EC, De Gendt S;, Journal of materials chemistry C : materials for optical and electronic devices 4, 1295 (2016). http://doi.org/10.1039/c5tc04063a
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On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films”. Dhayalan SK, Kujala J, Slotte J, Pourtois G, Simoen E, Rosseel E, Hikavyy A, Shimura Y, Iacovo S, Stesmans A, Loo R, Vandervorst W;, Applied physics letters 108, 082106 (2016). http://doi.org/10.1063/1.4942605
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Intrinsic tailing of resistive states distributions in amorphous <tex>HfOx </tex>, and TaOx based resistive random access memories”. Clima S, Chen YY, Fantini A, Goux L, Degraeve R, Govoreanu B, Pourtois G, Jurczak M, IEEE electron device letters 36, 769 (2015). http://doi.org/10.1109/LED.2015.2448731
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