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Author De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J.
Title Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers Type A1 Journal article
Year 1999 Publication Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 45 Issue 2-3 Pages 277-282
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000081748600023 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.806 Times cited Open Access
Notes Fwo-G.0051.97; Fwo-G.00117.86 Approved Most recent IF: 1.806; 1999 IF: 0.815
Call Number (up) UA @ lucian @ c:irua:95791 Serial 47
Permanent link to this record
 
 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
Title Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM Type A1 Journal article
Year 1999 Publication Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland Abbreviated Journal Phys Status Solidi A
Volume 171 Issue 1 Pages 147-157
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
Address
Corporate Author Thesis
Publisher Wiley Place of Publication Berlin Editor
Language Wos 000078539700020 Publication Date 2002-09-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 40 Open Access
Notes Approved Most recent IF: NA
Call Number (up) UA @ lucian @ c:irua:95798 Serial 1152
Permanent link to this record
 
 
Author Lebedev, O.I.; Van Tendeloo, G.; Amelinckx, S.; Leibold, B.; Habermeier, H.U.; Phillipp, F.
Title Structure and magnetotransport properties of La2/3Ca1/3MnO3 thin films prepared by pulsed laser deposition Type P1 Proceeding
Year 1998 Publication Materials Research Society symposium proceedings T2 – Symposium on Advances in Laser Ablation of Materials at the 1998 MRS, Spring Meeting, April 13-16, 1998, San Francisco, Calif. Abbreviated Journal
Volume Issue Pages 219-224
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract La1-xCaxMnO3-delta (LCMO) thin films are grown by pulsed laser deposition on a (100) SrTiO3 substrate at temperatures between 530 degrees C and 890 degrees C. The magnetotransport properties show a high negative magnetoresistance and a shift of the maximum of the R(T) curve as function of temperature. The Curie temperature changes with deposition temperature and film quality in the range of 100-220K. The film quality is characterised by X-ray diffraction and transmission electron microscopy (TEM); film and target compositions were verified by atomic emission spectroscopy. The local structure of the film depends on the growth conditions and substrate temperature. TEM reveals a slight distortion of the film leading to a breakdown of the symmetry from orthorhombic to monoclinic. At the highest growth temperatures, a well defined interface is observed within the LCMO film, parallel to the substrate surface; this interface divides the film into two lamellae with a different microstructure. The lamella close to the substrate is perfectly coherent with the substrate, suggesting that it is strained as a result of the lattice parameter mismatch; the upper lamella shows a typical domain structure with unusual translation interfaces characterised by a displacement vector of the type 1/2[010](m) and 1/2[001](m) when referred ten the monoclinic lattice.
Address
Corporate Author Thesis
Publisher Materials research society Place of Publication Warrendale Editor
Language Wos 000077696000032 Publication Date 2011-04-05
Series Editor Series Title Abbreviated Series Title
Series Volume 526 Series Issue Edition
ISSN 1946-4274; ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number (up) UA @ lucian @ c:irua:95838 Serial 3283
Permanent link to this record
 
 
Author Seo, J.W.; Schryvers, D.; Potapov, P.
Title Electron microscopy study of ternary precipitates in Ni39.6Mn47.5Ti12.9 Type P1 Proceeding
Year 1998 Publication Abbreviated Journal
Volume Issue Pages 17-18
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Bristol Editor
Language Wos 000077019900008 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0565-7 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number (up) UA @ lucian @ c:irua:95855 Serial 972
Permanent link to this record
 
 
Author Lebedev, O.; Van Tendeloo, G.; Amelinckx, S.; Leibold, B.; Habermeier, H.U.
Title HREM investigation of La(1-x)Ca(x)MnO3-delta thin films Type P1 Proceeding
Year 1998 Publication Abbreviated Journal
Volume Issue Pages 517-518
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Bristol Editor
Language Wos 000077019900254 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0565-7 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number (up) UA @ lucian @ c:irua:95856 Serial 1504
Permanent link to this record
 
 
Author Antipov, E.V.; Putilin, S.N.; Shpanchenko, R.V.; Alyoshin, V.A.; Rozova, M.G.; Abakumov, A.M.; Mikhailova, D.A.; Balagurov, A.M.; Lebedev, O.; Van Tendeloo, G.
Title Structural features, oxygen and fluorine doping in Cu-based superconductors Type A1 Journal article
Year 1997 Publication Physica: C : superconductivity T2 – International Conference on Materials and Mechanisms of, Superconductivity – High Temperature Superconductors V, Feb. 28-Mar. 04, 1997, Beijing, Peoples R. China Abbreviated Journal Physica C
Volume 282 Issue Part 1 Pages 61-64
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The variation of structures and superconducting properties by changing extra oxygen or fluorine atoms concentration in Hg-based Cu mixed oxides and YBa2Cu3O6+delta was studied. The data obtained by NPD study of Hg-1201 can be considered as an evidence of the conventional oxygen doping mechanism with 2 delta holes per (CuO2) layer. The extra oxygen atom was found to be located in the middle of the Hg mesh only. Different formal charges of oxygen and fluorine inserted into reduced 123 structure results in its distinct variations. The fluorine incorporation into strongly reduced YBa2Cu3O6+delta causes a significant structural rearrangement and the formation of a new compound with a composition close to YBa2Cu3O6F2 (tetragonal alpha = 3.87 Angstrom and c approximate to 13 Angstrom), which structure was deduced from the combined results of X-ray diffraction, electron diffraction and high resolution electron microscopy. Fluorination treatment by XeF2 of nonsuperconducting 123 samples causes an appearance of bulk superconductivity with T-c up to 94K.
Address
Corporate Author Thesis
Publisher Elsevier Science Place of Publication Amsterdam Editor
Language Wos A1997XZ90400019 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.404 Times cited 10 Open Access
Notes Approved Most recent IF: 1.404; 1997 IF: 2.199
Call Number (up) UA @ lucian @ c:irua:95866 Serial 3237
Permanent link to this record
 
 
Author Blank, D.H.A.; Rijnders, A.J.H.M.; Verhoeven, M.A.J.; Bergs, R.M.H.; Rogalla, H.; Verbist, K.; Lebedev, O.; Van Tendeloo, G.
Title Characterisation of multilayer ramp-type REBa2Cu3O7-\delta structures by scanning probe microscopy and high-resolution electron microscopy Type A1 Journal article
Year 1997 Publication Journal of alloys and compounds T2 – Symposium on High Temperature Superconductor Thin Films, Growth, Mechanisms, Interfaces, Multilayers, at the 1996 Spring Meeting of the European-Materials-Society, June 04-07, 1996, Strasbourg, France Abbreviated Journal J Alloy Compd
Volume 251 Issue 1-2 Pages 206-208
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract We studied the morphology of ramps in REBa2CU3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TIN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence, Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBa2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, con even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions.
Address
Corporate Author Thesis
Publisher Elsevier Science Place of Publication Lausanne Editor
Language Wos A1997XM34000046 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-8388; ISBN Additional Links UA library record; WoS full record
Impact Factor 3.133 Times cited Open Access
Notes Approved Most recent IF: 3.133; 1997 IF: 1.035
Call Number (up) UA @ lucian @ c:irua:95868 Serial 310
Permanent link to this record
 
 
Author Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L.
Title Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ Type A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France Abbreviated Journal Nucl Instrum Meth B
Volume 120 Issue 1-4 Pages 186-189
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
Address
Corporate Author Thesis
Publisher Elsevier Place of Publication Amsterdam Editor
Language Wos A1996VZ24500040 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited 2 Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:95882 Serial 947
Permanent link to this record
 
 
Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J.
Title Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization Type A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr Abbreviated Journal Nucl Instrum Meth B
Volume 112 Issue 1-4 Pages 325-329
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
Address
Corporate Author Thesis
Publisher Elsevier science bv Place of Publication Amsterdam Editor
Language Wos A1996UW20100069 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited 9 Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:95886 Serial 1742
Permanent link to this record
 
 
Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type A1 Journal article
Year 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond
Volume 11 Issue 11 Pages 1194-1202
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Address
Corporate Author Thesis
Publisher Inst Materials Place of Publication London Editor
Language Wos A1995TQ95100016 Publication Date 2014-01-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.995 Times cited 7 Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:95911 Serial 2654
Permanent link to this record
 
 
Author Vasiliev, A.L.; Van Tendeloo, G.; Boikov, Y.; Olsson, E.; Ivanov, Z.; Claeson, T.; Kiselev, N.A.
Title Structural aspects of the combination of Si and YBa2Cu3O7-x Type A1 Journal article
Year 1995 Publication Institute of physics conference series Abbreviated Journal
Volume 146 Issue Pages 333-336
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The microstructure of defects and interfaces as well as interfacial reactions of the YBa2Cu3O7-x (YBCO) thin films on Si or Si on sapphire with single Y-stabilized ZrO2 (YSZ), double CeO2/YSZ or triple MgO/CeO2/YSZ buffer layer has been characterized by transmission electron microscopy The complex buffer made it possible to prevent detrimental interdiffusion and to control the orientation of YBCO layers.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1995BE73Q00070 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0951-3248 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved
Call Number (up) UA @ lucian @ c:irua:95922 Serial 3211
Permanent link to this record
 
 
Author Van Tendeloo, G.; Amelinckx, S.
Title Electron-microscopy and the structural studies of superconducting materials and fullerites Type P1 Proceeding
Year 1994 Publication NATO Advanced Study Institutes series: series E : applied sciences T2 – NATO Advanced Study Institute on Materials and crystallographic Aspects, of HT(c)-Superconductivity, May 17-30, 1993, Erice, Italy Abbreviated Journal
Volume Issue Pages 521-538
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Kluwer Academic Place of Publication Dordrecht Editor
Language Wos A1994BA54N00025 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume 263 Series Issue Edition
ISSN 0-7923-2773-X ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:95934 Serial 949
Permanent link to this record
 
 
Author Schryvers, D.; Tanner, L.E.
Title On the phase-like nature of the 7m structure in ni-al Type P1 Proceeding
Year 1994 Publication Abbreviated Journal
Volume Issue Pages 849-852
Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Elsevier Place of Publication Amsterdam Editor
Language Wos A1994BC69J00183 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume 18 Series Issue A B Edition
ISSN 0-444-81995-9 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Approved
Call Number (up) UA @ lucian @ c:irua:95935 Serial 2446
Permanent link to this record
 
 
Author Bernaerts, D.; Zhang, X.; Zhang, X.; Van Tendeloo, G.; Vanlanduyt, J.; Amelinckx, S.
Title HREM study of Rb6C60 and helical shaped carbon nanotubules Type P1 Proceeding
Year 1994 Publication Sciences Abbreviated Journal
Volume Issue Pages 305-306
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Editions physique Place of Publication Les ulis Editor
Language Wos A1994BE09Y00147 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved COMPUTER SCIENCE, INTERDISCIPLINARY 11/104 Q1 # PHYSICS, MATHEMATICAL 1/53 Q1 #
Call Number (up) UA @ lucian @ c:irua:95938 Serial 1512
Permanent link to this record
 
 
Author Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Le Tanner
Title HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited) Type P1 Proceeding
Year 1994 Publication Abbreviated Journal
Volume Issue Pages 659-662
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Editions physique Place of Publication Les ulis Editor
Language Wos A1994BE09Y00320 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:95939 Serial 1502
Permanent link to this record
 
 
Author Van Tendeloo, G.; Hervieu, M.; Chaillout, C.
Title Defect structure of Hg-based ceramic superconductors (invited) Type P1 Proceeding
Year 1994 Publication Sciences Abbreviated Journal
Volume Issue Pages 949-952
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Editions physique Place of Publication Les ulis Editor
Language Wos A1994BE09Y00462 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:95940 Serial 621
Permanent link to this record
 
 
Author van Landuyt, J.
Title The evolution of HVEM application in antwerp Type A1 Journal article
Year 1991 Publication Ultramicroscopy T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan Abbreviated Journal Ultramicroscopy
Volume 39 Issue 1-4 Pages 287-298
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies.
Address
Corporate Author Thesis
Publisher Elsevier Place of Publication Amsterdam Editor
Language Wos A1991GY23100034 Publication Date 2002-10-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record
Impact Factor 2.436 Times cited Open Access
Notes Approved PHYSICS, APPLIED 47/145 Q2 #
Call Number (up) UA @ lucian @ c:irua:95973 Serial 3579
Permanent link to this record
 
 
Author Tan, H.
Title From EELS to oxidation state mapping : an investigation into oxidation state mapping of transition metals with electron energy-loss spectroscopy Type Doctoral thesis
Year 2012 Publication Abbreviated Journal
Volume Issue Pages
Keywords Doctoral thesis; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Antwerpen Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number (up) UA @ lucian @ c:irua:96030 Serial 1280
Permanent link to this record
 
 
Author Frolov, D.D.; Kotovshchikov, Y.N.; Morozov, I.V.; Boltalin, A.I.; Fedorova, A.A.; Marikutsa, A.V.; Rumyantseva, M.N.; Gaskov, A.M.; Sadovskaya, E.M.; Abakumov, A.M.
Title Oxygen exchange on nanocrystalline tin dioxide modified by palladium Type A1 Journal article
Year 2012 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 186 Issue Pages 1-8
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Temperature-programmed oxygen isotopic exchange study was performed on nanocrystalline tin dioxide-based materials synthesized via sol-gel route and modified by palladium. Such materials are widely used as resistive gas sensors. The experiments were carried out in a flow-reactor up to complete isotopic substitution of oxygen. Substantial rates of isotopic exchange for SnO2 were observed from about 700 K. The distribution of isotopic molecules O-16(2). (OO)-O-16-O-18 and O-18(2) corresponds to simple dioxygen heteroexchange mechanism with single lattice oxygen atom. The modification of SnO2 by Pd introduced multiple heteroexchange mechanism with preliminary O-2 dissociation on the clusters surface. Spill-over of atomic oxygen from Pd to the surface of SnO2 and fast exchange with lattice oxygen result in more than 100% increase of apparent heteroexchange rate. The exchange on SnO2/Pd was shown to be a complex process involving partial deactivation of the catalytic centers at temperature higher than 750 K. (C) 2011 Elsevier Inc. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000299801400001 Publication Date 2011-12-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.299 Times cited 34 Open Access
Notes Approved Most recent IF: 2.299; 2012 IF: 2.040
Call Number (up) UA @ lucian @ c:irua:96202 Serial 2546
Permanent link to this record
 
 
Author Ustarroz, J.; Ke, X.; Hubin, A.; Bals, S.; Terryn, H.
Title New insights into the early stages of nanoparticle electrodeposition Type A1 Journal article
Year 2012 Publication The journal of physical chemistry: C : nanomaterials and interfaces Abbreviated Journal J Phys Chem C
Volume 116 Issue 3 Pages 2322-2329
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Electrodeposition is an increasingly important method to synthesize supported nanoparticles, yet the early stages of electrochemical nanoparticle formation are not perfectly understood. In this paper, the early stages of silver nanoparticle electrodeposition on carbon substrates have been studied by aberration-corrected TEM, using carbon-coated TEM grids as electrochemical electrodes. In this manner we have access to as-deposited nanoparticle size distribution and structural characterization at the atomic scale combined with electrochemical measurements, which represents a breakthrough in a full understanding of the nanoparticle electrodeposition mechanisms. Whereas classical models, based upon characterization at the nanoscale, assume that electrochemical growth is only driven by direct attachment, the results reported hereafter indicate that early nanoparticle growth is mostly driven by nanocluster surface movement and aggregation. Hence, we conclude that electrochemical nulceation and growth models should be revised and that an electrochemical aggregative growth mechanism should be considered in the early stages of nanoparticle electrodeposition.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos 000299584400037 Publication Date 2011-12-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1932-7447;1932-7455; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.536 Times cited 104 Open Access
Notes Fwo Approved Most recent IF: 4.536; 2012 IF: 4.814
Call Number (up) UA @ lucian @ c:irua:96225 Serial 2316
Permanent link to this record
 
 
Author Chernov, S.V.; Dobrovolsky, Y.A.; Istomin, S.Y.; Antipov, E.V.; Grins, J.; Svensson, G.; Tarakina, N.V.; Abakumov, A.M.; Van Tendeloo, G.; Eriksson, S.G.; Rahman, S.M.H.;
Title _Sr{2}GaScO5, Sr10Ga6Sc4O25, and SrGa0.75Sc0.25O2.5 : a play in the octahedra to tetrahedra ratio in oxygen-deficient perovskites Type A1 Journal article
Year 2012 Publication Inorganic chemistry Abbreviated Journal Inorg Chem
Volume 51 Issue 2 Pages 1094-1103
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Three different perovskite-related phases were isolated in the SrGa(1-x)Sc(x)O(2.5) system: Sr(2)GaScO(5), Sr(10)Ga(6)Sc(4)O(25), and SrGa(0.75)Sc(0.25)O(2.5), Sr(2)GaScO(5) (x = 0.5) crystallizes in a brownrnillerite-type structure [space group (S.G.) Icmm, a = 5.91048(5) angstrom, b = 15.1594(1) angstrom, and c = 5.70926(4) angstrom] with complete ordering of Sc(3+) and Ga(3+) over octahedral and tetrahedral positions, respectively. The crystal structure of Sr(10)Ga(6)Sc(4)O(25) (x = 0.4) was determined by the Monte Carlo method and refined using a combination of X-ray, neutron, and electron diffraction data [S.G. I4(1)/a, a = 17.517(1) angstrom, c = 32.830(3) angstrom]. It represents a novel type of ordering of the B cations and oxygen vacancies in perovskites. The crystal structure of Sr(10)Ga(6)Sc(4)O(25) can be described as a stacking of eight perovskite layers along the c axis ...[-(Sc/Ga)O(1.6)-SrO(0.8)-(Sc/Ga)O(1.8)-SrO(0.8)-](2 center dot center dot center dot) Similar to Sr(2)GaScO(5), this structure features a complete ordering of the Sc(3+) and Ga(3+) cations over octahedral and tetrahedral positions, respectively, within each layer. A specific feature of the crystal structure of Sr(10)Ga(6)Sc(4)O(25) is that one-third of the tetrahedra have one vertex not connected with other Sc/Ga cations. Further partial replacement of Sc(3+) by Ga(3+) leads to the formation of the cubic perovskite phase SrGa(0.75)Sc(0.25)O(2.5) (x = 0.25) with a = 3.9817(4) angstrom. This compound incorporates water molecules in the structure forming SrGa(0.75)Sc(0.25)O(2.5)center dot xH(2)O hydrate, which exhibits a proton conductivity of similar to 2.0 x 10(-6) S/cm at 673 K.
Address
Corporate Author Thesis
Publisher Place of Publication Easton, Pa Editor
Language Wos 000299028800042 Publication Date 2011-12-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0020-1669;1520-510X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.857 Times cited 14 Open Access
Notes Approved Most recent IF: 4.857; 2012 IF: 4.593
Call Number (up) UA @ lucian @ c:irua:96229 Serial 3559
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Author Tikhomirov, V.K.; Vosch, T.; Fron, E.; Rodríguez, V.D.; Velázquez, J.J.; Kirilenko, D.; Van Tendeloo, G.; Hofkens, J.; Van der Auweraer, M.; Moshchalkov, V.V.
Title Luminescence of oxyfluoride glasses co-doped with Ag nanoclusters and Yb3+ ions Type A1 Journal article
Year 2012 Publication RSC advances Abbreviated Journal Rsc Adv
Volume 2 Issue 4 Pages 1496-1501
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Bulk oxyfluoride glasses co-doped with Ag nanoclusters and Yb3+ ions have been prepared by a melt quenching technique. When excited in the absorption band of the Ag nanoclusters between 300 to 500 nm, these glasses emit a broad band characteristic of the Ag nanoclusters between 400 to 750 nm as well as an emission band between 900 to 1100 nm, originating from Yb3+ ions. The intensity ratio of the Yb3+/Ag emission bands increases with the Ag doping level at a fixed concentration of Yb3+, indicating the presence of energy transfer mechanism from the Ag nanoclusters to the Yb3+ ions. Comparison of time-resolved decay kinetics of the luminescence in the respectively Ag nanocluster-Yb3+ co-doped and single Ag nanocluster doped glasses, hints towards an energy transfer from the red and infrared emitting Ag nanoclusters to the Yb3+ ions.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000299695300038 Publication Date 2011-12-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2046-2069; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.108 Times cited 46 Open Access
Notes Fwo; Iap Approved Most recent IF: 3.108; 2012 IF: 2.562
Call Number (up) UA @ lucian @ c:irua:96239 Serial 1856
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Author Özen, M.; Mertens, M.; Luyten, J.; Snijkers, F.; d' Hondt, H.; Cool, P.
Title Hydrothermal synthesis of carbonate-free submicron-sized barium titanate from an amorphous precursor : synthesis and characterization Type A1 Journal article
Year 2012 Publication Ceramics international Abbreviated Journal Ceram Int
Volume 38 Issue 1 Pages 619-625
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
Abstract In this paper, the amorphous barium titanate precursor was prepared by the peroxo-hydroxide method and post-treated by various drying procedures, such as: room temperature drying, room temperature vacuum drying and vacuum drying at 50 degrees C. The objective in the latter two treatments was to increase the Ti-O-Ba bonds of the precursor. The post-treated precursors were compared with the untreated (i.e., 'wet') precursor. Also, a barium titanate precursor was prepared by an alkoxide route. Afterwards, the precursors were hydrothermally treated at 200 degrees C in a 10 M NaOH solution. Vacuum drying of the precursor seemingly promoted the formation of Ti-O-Ti bonds in the hydrothermal end-product. The low Ba:Ti ratio (0.66) of the alkoxide-route prepared precursor lead to a multi-phase hydrothermal product with BaTiO(3) as the main phase. In contrast, phase pure BaTiO(3), i.e. without BaCO(3) contamination, was obtained for the precursor which was dried at room temperature. Cube-shaped and highly crystalline BaTiO(3) particles were observed by electron microscopy for the hydrothermally treated peroxo-hydroxide-route prepared precursor. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Barking Editor
Language Wos 000298766900083 Publication Date 2011-08-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0272-8842; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.986 Times cited 14 Open Access
Notes Approved Most recent IF: 2.986; 2012 IF: 1.789
Call Number (up) UA @ lucian @ c:irua:96263 Serial 1541
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Author Yang, X.-Y.; Tian, G.; Chen, L.-H.; Li, Y.; Rooke, J.C.; Wei, Y.-X.; Liu, Z.-M.; Deng, Z.; Van Tendeloo, G.; Su, B.-L.
Title Well-organized zeolite nanocrystal aggregates with interconnected hierarchically micro-meso-macropore systems showing enhanced catalytic performance Type A1 Journal article
Year 2011 Publication Chemistry: a European journal Abbreviated Journal Chem-Eur J
Volume 17 Issue 52 Pages 14987-14995
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Preparation and characterization of well-organized zeolitic nanocrystal aggregates with an interconnected hierarchically micromesomacro porous system are described. Amorphous nanoparticles in bimodal aluminosilicates were directly transformed into highly crystalline nanosized zeolites, as well as acting as scaffold template. All pores on three length scales incorporated in one solid body are interconnected with each other. These zeolitic nanocrystal aggregates with hierarchically micromesomacroporous structure were thoroughly characterized. TEM images and 29Si NMR spectra showed that the amorphous phase of the initial material had been completely replaced by nanocrystals to give a micromesomacroporous crystalline zeolitic structure. Catalytic testing demonstrated their superiority due to the highly active sites and the presence of interconnected micromesomacroporosity in the cracking of bulky 1,3,5-triisopropylbenzene (TIPB) compared to traditional zeolite catalysts. This synthesis strategy was extended to prepare various zeolitic nanocrystal aggregates (ZSM-5, Beta, TS-1, etc.) with well-organized hierarchical micromesomacroporous structures.
Address
Corporate Author Thesis
Publisher Place of Publication Weinheim Editor
Language Wos 000298547300035 Publication Date 2011-11-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0947-6539; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 5.317 Times cited 61 Open Access
Notes Approved Most recent IF: 5.317; 2011 IF: 5.925
Call Number (up) UA @ lucian @ c:irua:96274 Serial 3913
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Author Bals, S.; Van Aert, S.; Verbeeck, J.; Van Tendeloo, G.
Title Structural, chemical and electronic characterization of ceramic materials using quantitative (scanning) transmission electron microscopy Type A1 Journal article
Year 2007 Publication Microscopy and microanalysis Abbreviated Journal Microsc Microanal
Volume 13 Issue S:3 Pages 332-333
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge, Mass. Editor
Language Wos Publication Date 2008-02-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1431-9276;1435-8115; ISBN Additional Links UA library record
Impact Factor 1.891 Times cited Open Access
Notes Approved Most recent IF: 1.891; 2007 IF: 1.941
Call Number (up) UA @ lucian @ c:irua:96553 Serial 3224
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Author Batenburg, K.J.; Bals, S.; Van Aert, S.; Roelandts, T.; Sijbers, J.
Title Ultra-high resolution electron tomography for materials science : a roadmap Type A1 Journal article
Year 2011 Publication Microscopy and microanalysis Abbreviated Journal Microsc Microanal
Volume 17 Issue S:2 Pages 934-935
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge, Mass. Editor
Language Wos Publication Date 2011-10-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1431-9276;1435-8115; ISBN Additional Links UA library record
Impact Factor 1.891 Times cited Open Access
Notes Approved Most recent IF: 1.891; 2011 IF: 3.007
Call Number (up) UA @ lucian @ c:irua:96554 Serial 3792
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Author Van Aert, S.; Verbeeck, J.; Bals, S.; Erni, R.; van Dyck, D.; Van Tendeloo, G.
Title Atomic resolution mapping using quantitative high-angle annular dark field scanning transmission electron microscopy Type A1 Journal article
Year 2009 Publication Microscopy and microanalysis Abbreviated Journal Microsc Microanal
Volume 15 Issue S:2 Pages 464-465
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge, Mass. Editor
Language Wos 000208119100230 Publication Date 2009-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1431-9276;1435-8115; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.891 Times cited 1 Open Access
Notes Approved Most recent IF: 1.891; 2009 IF: 3.035
Call Number (up) UA @ lucian @ c:irua:96555UA @ admin @ c:irua:96555 Serial 178
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Author Verbeeck, J.; Van Aert, S.; Zhang, L.; Haiyan, T.; Schattschneider, P.; Rosenauer, A.
Title Computational aspects in quantitative EELS Type A1 Journal article
Year 2010 Publication Microscopy and microanalysis Abbreviated Journal Microsc Microanal
Volume 16 Issue S:2 Pages 240-241
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge, Mass. Editor
Language Wos Publication Date 2010-08-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1431-9276;1435-8115; ISBN Additional Links UA library record
Impact Factor 1.891 Times cited Open Access
Notes Approved Most recent IF: 1.891; 2010 IF: 3.259
Call Number (up) UA @ lucian @ c:irua:96556UA @ admin @ c:irua:96556 Serial 454
Permanent link to this record
 
 
Author van den Broek, W.; Van Aert, S.; van Dyck, D.
Title Fully automated measurement of the modulation transfer function of charge-coupled devices above the Nyquist frequency Type A1 Journal article
Year 2012 Publication Microscopy and microanalysis Abbreviated Journal Microsc Microanal
Volume 18 Issue 2 Pages 336-342
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract The charge-coupled devices used in electron microscopy are coated with a scintillating crystal that gives rise to a severe modulation transfer function (MTF). Exact knowledge of the MTF is imperative for a good correspondence between image simulation and experiment. We present a practical method to measure the MTF above the Nyquist frequency from the beam blocker's shadow image. The image processing has been fully automated and the program is made public. The method is successfully tested on three cameras with various beam blocker shapes.
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge, Mass. Editor
Language Wos 000302084700011 Publication Date 2012-02-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1431-9276;1435-8115; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.891 Times cited 15 Open Access
Notes Fwo Approved Most recent IF: 1.891; 2012 IF: 2.495
Call Number (up) UA @ lucian @ c:irua:96557 Serial 1297
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Author van den Broek, W.; Rosenauer, A.; Goris, B.; Martinez, G.T.; Bals, S.; Van Aert, S.; van Dyck, D.
Title Correction of non-linear thickness effects in HAADF STEM electron tomography Type A1 Journal article
Year 2012 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 116 Issue Pages 8-12
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract In materials science, high angle annular dark field scanning transmission electron microscopy is often used for tomography at the nanometer scale. In this work, it is shown that a thickness dependent, non-linear damping of the recorded intensities occurs. This results in an underestimated intensity in the interior of reconstructions of homogeneous particles, which is known as the cupping artifact. In this paper, this non-linear effect is demonstrated in experimental images taken under common conditions and is reproduced with a numerical simulation. Furthermore, an analytical derivation shows that these non-linearities can be inverted if the imaging is done quantitatively, thus preventing cupping in the reconstruction.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000304473700002 Publication Date 2012-03-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 67 Open Access
Notes Fwo Approved Most recent IF: 2.843; 2012 IF: 2.470
Call Number (up) UA @ lucian @ c:irua:96558 Serial 518
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