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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
HREM investigation of a Fe/GaN/Fe tunnel junction |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
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UA library record; WoS full record; |
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Nistor, L.C.; van Landuyt, J.; Dincã, G. |
HREM of defects in cubic boron nitride single crystals |
1998 |
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UA library record; WoS full record; |
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Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J. |
In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure |
1997 |
Conference series of the Institute of Physics |
157 |
1 |
UA library record; WoS full record; WoS citing articles |
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van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
The influence of crystal thickness on the image tone |
2003 |
Journal of imaging science |
47 |
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UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation |
1997 |
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UA library record |
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Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J. |
Laser thermotreatment of the SnO2layers |
1998 |
Eurosensors XII, vols 1 and 2 |
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UA library record; WoS full record; |
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van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J. |
Microscopy of gemmological materials |
1997 |
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4 |
UA library record; WoS full record; WoS citing articles |
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Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K. |
Microstructure of Mn-doped, spin-cast FeSi2 |
1997 |
Journal of electron microscopy |
46 |
3 |
UA library record; WoS full record; WoS citing articles |
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Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
Morphology and defects in shallow trench isolation structures |
1999 |
Conference series of the Institute of Physics |
164 |
1 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
New intermediate defect configuration in Si studied by in situ HREM irradiation |
1997 |
Conference series of the Institute of Physics |
157 |
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UA library record; WoS full record; |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope |
1998 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
77 |
23 |
UA library record; WoS full record; WoS citing articles |
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Takeda, M.; Shinohara, G.; Yamada, H.; Yoshida, S.; van Landuyt, J.; Hashimoto, H. |
Precipitation behavior in Cu-Co alloy |
1998 |
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UA library record |
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Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. |
Quantitative EFTEM study of germanium quantum dots |
2001 |
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UA library record; WoS full record; |
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Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J. |
Reliability of copper dual damascene influenced by pre-clean |
2002 |
Analysis Of Integrated Circuits |
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5 |
UA library record; WoS full record; WoS citing articles |
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Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. |
Stress analysis with convergent beam electron diffraction around NMOS transistors |
2001 |
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UA library record; WoS full record; |
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Nistor, L.; van Landuyt, J.; Ralchenko, V. |
Structural aspects of CVD idamond wafers grown at different hydrogen flow rates |
1999 |
Physica status solidi: A: applied research |
171 |
15 |
UA library record; WoS full record; WoS citing articles |
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Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Korothushenko, K.G.; Smolin, A.A. |
Structural studies of nanocrystalline diamond thin films |
1997 |
Materials science forum |
239-241 |
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UA library record; WoS full record; |
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Vanhellemont, J.; Bender, H.; van Landuyt, J. |
TEM studies of processed Si device materials |
1997 |
Conference series of the Institute of Physics |
157 |
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UA library record; WoS full record; |
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Takeda, M.; Suzuki, N.; Shinohara, G.; Endo, T.; van Landuyt, J. |
TEM study on precipitation behavior in Cu-Co alloys |
1998 |
Physica status solidi: A: applied research |
168 |
18 |
UA library record; WoS full record; WoS citing articles |
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van Landuyt, J. |
Een tempel voor elektronenmicroscopie “kijken naar atomen” |
1998 |
Fonds informatief |
38 |
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UA library record |
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Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C. |
The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals |
2000 |
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UA library record; WoS full record; |
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Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J. |
Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application |
2000 |
Sensors and actuators : B : chemical |
68 |
51 |
UA library record; WoS full record; WoS citing articles |
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Ignatova, V.A.; Lebedev, O.I.; Wätjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. |
Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation |
2002 |
Microchimica acta |
139 |
3 |
UA library record; WoS full record; WoS citing articles |
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Ahenach, J.; Cool, P.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
Influence of water on the pillaring of montmorillonite with aminopropyltriethoxysilane |
1999 |
Physical chemistry, chemical physics |
1 |
10 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. |
In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures |
2000 |
Physical review : B : condensed matter and materials physics |
61 |
27 |
UA library record; WoS full record; WoS citing articles |
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Xu, T.; Wang, P.; Fang, P.; Kan, Y.; Chen, L.; Vleugels, J.; Van der Biest, O.; van Landuyt, J. |
Phase assembly and microstructure of CeO2-doped ZrO2 ceramics prepared by spark plasma sintering |
2005 |
Journal of the European Ceramic Society |
25 |
13 |
UA library record; WoS full record; WoS citing articles |
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Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
2000 |
Applied physics letters |
77 |
44 |
UA library record; WoS full record; WoS citing articles |
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Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
Interaction of a Ti-capped Co thin film with Si3N4 |
2000 |
Applied physics letters |
77 |
3 |
UA library record; WoS full record; WoS citing articles |
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Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. |
Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays |
1999 |
Applied physics letters |
75 |
481 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. |
High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing |
1998 |
Applied physics letters |
72 |
16 |
UA library record; WoS full record; WoS citing articles |
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