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Author Shenderova, O.; Vargas, A.; Turner, S.; Ivanov, D.M.; Ivanov, M.G.
Title Nanodiamond-based nanolubricants : investigation of friction surfaces Type A1 Journal article
Year 2014 Publication Tribology transactions Abbreviated Journal Tribol T
Volume 57 Issue 6 Pages 1051-1057
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Synergistic compositions of detonation nanodiamond (DND) particles with polytetrafluoroethylene and molybdenum dialkyldithiophosphate were used in ring-on-ring, four-ball, and block-on-ring tests as an additive to polyalphaolefins and engine oils. Modest to significant reductions in the friction coefficients, wear, or both were observed. In the wear scars produced in the block-on-ring tests, the friction surfaces were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and profilometry. Significant polishing effects of the friction surfaces in lubricants containing DND were revealed in SEM observations and roughness measurements. The roughness of the scar surfaces produced in the presence of DND additives was about 35% lower than the roughness of the scars observed in pure oil experiments.
Address
Corporate Author Thesis
Publisher Place of Publication Park Ridge, Ill. Editor
Language Wos 000345317900009 Publication Date 2014-06-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1040-2004;1547-397X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.685 Times cited 23 Open Access
Notes Approved (up) Most recent IF: 1.685; 2014 IF: 1.349
Call Number UA @ lucian @ c:irua:122161 Serial 2252
Permanent link to this record
 
 
Author Mehta, A.N.; Zhang, H.; Dabral, A.; Richard, O.; Favia, P.; Bender, H.; Delabie, A.; Caymax, M.; Houssa, M.; Pourtois, G.; Vandervorst, W.
Title Structural characterization of SnS crystals formed by chemical vapour deposition Type A1 Journal article
Year 2017 Publication Journal of microscopy T2 – 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND Abbreviated Journal J Microsc-Oxford
Volume 268 Issue 3 Pages 276-287
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract <script type='text/javascript'>document.write(unpmarked('The crystal and defect structure of SnS crystals grown using chemical vapour deposition for application in electronic devices are investigated. The structural analysis shows the presence of two distinct crystal morphologies, that is thin flakes with lateral sizes up to 50 m and nanometer scale thickness, and much thicker but smaller crystallites. Both show similar Raman response associated with SnS. The structural analysis with transmission electron microscopy shows that the flakes are single crystals of -SnS with [010] normal to the substrate. Parallel with the surface of the flakes, lamellae with varying thickness of a new SnS phase are observed. High-resolution transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), first-principles simulations (DFT) and nanobeam diffraction (NBD) techniques are employed to characterise this phase in detail. DFT results suggest that the phase is a strain stabilised \u0027 one grown epitaxially on the -SnS crystals. TEM analysis shows that the crystallites are also -SnS with generally the [010] direction orthogonal to the substrate. Contrary to the flakes the crystallites consist of two to four grains which are tilted up to 15 degrees relative to the substrate. The various grain boundary structures and twin relations are discussed. Under high-dose electron irradiation, the SnS structure is reduced and -Sn formed. It is shown that this damage only occurs for SnS in direct contact with SiO2. Lay description SnS is a p-type semiconductor, which has attracted significant interest for electronic devices due to its unique properties, low-toxicity and abundance of Sn in nature. Although in the past it has been most extensively studied as the absorber material in solar cells, it has recently garnered interest for application as a p-type two-dimensional semiconductor in nanoelectronic devices due to its anisotropic layered structure similar to the better known phosphorene. Tin sulphide can take the form of several phases and the electronic properties of the material depend strongly on its crystal structure. It is therefore crucial to study the crystal structure of the material in order to predict the electronic properties and gain insight into the growth mechanism. In this work, SnS crystals deposited using a chemical vapour deposition technique are investigated extensively for their crystal and defect structure using transmission electron microscopy (TEM) and related techniques. We find the presence of two distinct crystal morphologies, that is thin flakes with lateral sizes up to 50 m and nm scale thickness, and much thicker but smaller crystallites. The flakes are single crystals of -SnS and contain lamellae with varying thickness of a different phase which appear to be -SnS at first glance. High-resolution scanning transmission electron microscopy is used to characterise these lamellae where the annular bright field (ABF) mode better reveals the position of the sulphur columns. The sulphur columns in the lamellae are found to be shifted relative to the -SnS structure which indicates the formation of a new phase which is a distorted version of the phase which we tentatively refer to as \u0027-SnS. Simulations based on density functional theory (DFT) are used to model the interface and a similar shift of sulphur columns in the -SnS layer is observed which takes place as a result of strong interaction at the interface between the two phases resulting in strain transfer. Nanobeam electron diffraction (NBD) is used to map the lattice mismatch in the thickness of the flakes which reveals good in-plane matching and some expansion out-of-plane in the lamellae. Contrary to the flakes the crystallites are made solely of -SnS and consist of two to four grains which are tilted up to 15 degrees relative to the substrate. The various grain boundary structures and twin relations are discussed. At high electron doses, SnS is reduced to -Sn, however the damage occurs only for SnS in direct contact with SiO2.'));
Address
Corporate Author Thesis
Publisher Wiley Place of Publication Hoboken Editor
Language Wos 000415900300009 Publication Date 2017-09-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-2720 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.692 Times cited 2 Open Access Not_Open_Access
Notes Approved (up) Most recent IF: 1.692
Call Number UA @ lucian @ c:irua:147692 Serial 4898
Permanent link to this record
 
 
Author Yang, Z.; Schryvers, D.; Roels, F.; d' Haese, P.C.; de Broe, M.E.
Title Demonstration of lanthanum in liver cells by energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy and high-resolution transmission electron microscopy Type A1 Journal article
Year 2006 Publication Journal of microscopy Abbreviated Journal J Microsc-Oxford
Volume 223 Issue 2 Pages 133-139
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Pathophysiology
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000239702700006 Publication Date 2006-08-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-2720;1365-2818; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.692 Times cited 29 Open Access
Notes Approved (up) Most recent IF: 1.692; 2006 IF: 1.947
Call Number UA @ lucian @ c:irua:59109 Serial 633
Permanent link to this record
 
 
Author Bogaerts, A.; Grozeva, M.
Title Axial non-uniformity of longitudinal hollow cathode discharges for laser applications: numerical modeling and comparison with experiments Type A1 Journal article
Year 2002 Publication Applied physics: B: photo-physics and laser chemistry Abbreviated Journal Appl Phys B-Lasers O
Volume 75 Issue Pages 731-738
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos 000180587100019 Publication Date 2004-03-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0946-2171;1432-0649; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.696 Times cited 8 Open Access
Notes Approved (up) Most recent IF: 1.696; 2002 IF: 2.080
Call Number UA @ lucian @ c:irua:44007 Serial 211
Permanent link to this record
 
 
Author Bogaerts, A.; Grozeva, M.
Title Effect of helium/argon gas ratio in a He-Ar-Cu+ IR hollow-cathode discharge laser : modeling study and comparison with experiments Type A1 Journal article
Year 2003 Publication Applied physics B : lasers and optics Abbreviated Journal Appl Phys B-Lasers O
Volume 76 Issue 3 Pages 299-306
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The He-Ar-Cu+ IR laser operates in a hollow-cathode discharge, typically in a mixture of helium with a few-% Ar. The population inversion of the Cu+ ion levels, responsible for laser action, is attributed to asymmetric charge transfer between He+ ions and sputtered Cu atoms. The Ar gas is added to promote sputtering of the Cu cathode. In this paper, a hybrid modeling network consisting of several different models for the various plasma species present in a He-Ar-Cu hollow-cathode discharge is applied to investigate the effect of Ar concentration in the gas mixture on the discharge behavior, and to find the optimum He/Ar gas ratio for laser operation. It is found that the densities of electrons, Ar+ ions, Ar-m* metastable atoms, sputtered Cu atoms and Cu+ ions increase upon the addition of more Ar gas, whereas the densities of He+ ions, He-2(+) ions and He-m* metastable atoms drop considerably. The product of the calculated Cu atom and He+ ion densities, which determines the production rate of the upper laser levels, and hence probably also the laser output power, is found to reach a maximum around 1-5% Ar addition. This calculation result is compared to experimental measurements, and reasonable agreement has been reached.
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos 000182758000017 Publication Date 2004-03-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0946-2171;1432-0649; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.696 Times cited 6 Open Access
Notes Approved (up) Most recent IF: 1.696; 2003 IF: 2.012
Call Number UA @ lucian @ c:irua:104125 Serial 812
Permanent link to this record
 
 
Author Kukhlevsky, S.V.; Mechler, M.; Samek, O.; Janssens, K.
Title Analytical model of the enhanced light transmission through subwavelength metal slits: Green's function formalism versus Rayleigh's expansion Type A1 Journal article
Year 2006 Publication Applied physics B : lasers and optics Abbreviated Journal Appl Phys B-Lasers O
Volume 84 Issue 1/2 Pages 19-24
Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000238828700004 Publication Date 2006-05-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0946-2171 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.696 Times cited 7 Open Access
Notes Approved (up) Most recent IF: 1.696; 2006 IF: 2.023
Call Number UA @ admin @ c:irua:59635 Serial 5472
Permanent link to this record
 
 
Author Bafekry, A.; Stampfl, C.; Peeters, F.M.
Title The electronic, optical, and thermoelectric properties of monolayer PbTe and the tunability of the electronic structure by external fields and defects Type A1 Journal article
Year 2020 Publication Physica Status Solidi B-Basic Solid State Physics Abbreviated Journal Phys Status Solidi B
Volume Issue Pages 2000182-12
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract First‐principles calculations, within the framework of density functional theory, are used to investigate the structural, electronic, optical, and thermoelectric properties of monolayer PbTe. The effect of layer thickness, electric field, strain, and vacancy defects on the electronic and magnetic properties is systematically studied. The results show that the bandgap decreases as the layer thickness increases from monolayer to bulk. With application of an electric field on bilayer PbTe, the bandgap decreases from 70 meV (0.2 V Å⁻¹) to 50 meV (1 V Å⁻¹) when including spin–orbit coupling (SOC). Application of uniaxial strain induces a direct‐to‐indirect bandgap transition for strain greater than +6%. In addition, the bandgap decreases under compressive biaxial strain (with SOC). The effect of vacancy defects on the electronic properties of PbTe is also investigated. Such vacancy defects turn PbTe into a ferromagnetic metal (single vacancy Pb) with a magnetic moment of 1.3 μB, and into an indirect semiconductor with bandgap of 1.2 eV (single Te vacancy) and 1.5 eV (double Pb + Te vacancy). In addition, with change of the Te vacancy concentration, a bandgap of 0.38 eV (5.55%), 0.43 eV (8.33%), and 0.46 eV (11.11%) is predicted.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000527679200001 Publication Date 2020-04-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0370-1972 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.6 Times cited 40 Open Access
Notes ; This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2017R1A2B2011989). In addition, this work was supported by the FLAG-ERA project 2DTRANS TMD and the Flemish Science Foundation (FWO-Vl). The authors are thankful for comments by Mohan Verma from the Computational Nanoionics Research Lab, Department of Applied Physics, Bhilai, India and to Francesco Buonocore from ENEA, Casaccia Research Centre, Rome, Italy. ; Approved (up) Most recent IF: 1.6; 2020 IF: 1.674
Call Number UA @ admin @ c:irua:168730 Serial 6502
Permanent link to this record
 
 
Author Bafekry, A.; Van Nguyen, C.; Stampfl, C.; Akgenc, B.; Ghergherehchi, M.
Title Oxygen vacancies in the single layer of Ti₂CO₂ MXene: effects of gating voltage, mechanical strain, and atomic impurities Type A1 Journal article
Year 2020 Publication Physica Status Solidi B-Basic Solid State Physics Abbreviated Journal Phys Status Solidi B
Volume Issue Pages 2000343-2000349
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Herein, using first-principles calculations the structural and electronic properties of the Ti(2)CO(2)MXene monolayer with and without oxygen vacancies are systematically investigated with different defect concentrations and patterns, including partial, linear, local, and hexagonal types. The Ti(2)CO(2)monolayer is found to be a semiconductor with a bandgap of 0.35 eV. The introduction of oxygen vacancies tends to increase the bandgap and leads to electronic phase transitions from nonmagnetic semiconductors to half-metals. Moreover, the semiconducting characteristic of O-vacancy Ti(2)CO(2)can be adjusted via electric fields, strain, and F-atom substitution. In particular, an electric field can be used to alter the nonmagnetic semiconductor of O-vacancy Ti(2)CO(2)into a magnetic one or into a half-metal, whereas the electronic phase transition from a semiconductor to metal can be achieved by applying strain and F-atom substitution. The results provide a useful guide for practical applications of O-vacancy Ti(2)CO(2)monolayers in nanoelectronic and spinstronic nanodevices.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000571060800001 Publication Date 2020-09-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0370-1972 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.6 Times cited Open Access
Notes ; This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (NRF-2017R1A2B2011989). ; Approved (up) Most recent IF: 1.6; 2020 IF: 1.674
Call Number UA @ admin @ c:irua:171948 Serial 6576
Permanent link to this record
 
 
Author Bercx, M.; Mayda, S.; Depla, D.; Partoens, B.; Lamoen, D.
Title Plasmonic effects in the neutralization of slow ions at a metallic surface Type A1 Journal Article
Year 2023 Publication Contributions to Plasma Physics Abbreviated Journal Contrib. Plasma Phys
Volume Issue Pages
Keywords A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Abstract Secondary electron emission is an important process that plays a significant role in several plasma‐related applications. As measuring the secondary electron yield experimentally is very challenging, quantitative modelling of this process to obtain reliable yield data is critical as input for higher‐scale simulations. Here, we build upon our previous work combining density functional theory calculations with a model originally developed by Hagstrum to extend its application to metallic surfaces. As plasmonic effects play a much more important role in the secondary electron emission mechanism for metals, we introduce an approach based on Poisson point processes to include both surface and bulk plasmon excitations to the process. The resulting model is able to reproduce the yield spectra of several available experimental results quite well but requires the introduction of global fitting parameters, which describe the strength of the plasmon interactions. Finally, we use an in‐house developed workflow to calculate the electron yield for a list of elemental surfaces spanning the periodic table to produce an extensive data set for the community and compare our results with more simplified approaches from the literature.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 001067651300001 Publication Date 2023-09-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0863-1042 ISBN Additional Links UA library record; WoS full record
Impact Factor 1.6 Times cited Open Access Not_Open_Access
Notes We acknowledge the financial support of FWO-Vlaanderen through project G.0216.14N. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center) and the HPC infrastructure of the University of Antwerp (CalcUA), both funded by the FWO-Vlaanderen and the Flemish Government-department EWI. Approved (up) Most recent IF: 1.6; 2023 IF: 1.44
Call Number EMAT @ emat @c:irua:200330 Serial 8962
Permanent link to this record
 
 
Author Deylgat, E.; Chen, E.; Fischetti, M.V.; Sorée, B.; Vandenberghe, W.G.
Title Image-force barrier lowering in top- and side-contacted two-dimensional materials Type A1 Journal article
Year 2022 Publication Solid state electronics Abbreviated Journal Solid State Electron
Volume 198 Issue Pages 108458-4
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We compare the image-force barrier lowering (IFBL) and calculate the resulting contact resistance for four different metal-dielectric-two-dimensional (2D) material configurations. We analyze edge contacts in three different geometries (a homogeneous dielectric throughout, including the 2D layer; a homogeneous dielectric surrounding the 2D layer, both ungated and back gated) and also a top-contact assuming a homogeneous dielectric. The image potential energy of each configuration is determined and added to the Schottky energy barrier which is calculated assuming a textbook Schottky potential. For each configuration, the contact resistivity is calculated using the WKB approximation and the effective mass approximation using either SiO2 or HfO2 as the surrounding dielectric. We obtain the lowest contact resistance of 1 k Omega mu m by n-type doping an edge contacted transition metal-dichalcogenide (TMD) monolayer, sandwiched between SiO2 dielectric, with similar to 1012 cm-2 donor atoms. When this optimal configuration is used, the contact resistance is lowered by a factor of 50 compared to the situation when the IFBL is not considered.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000876289800003 Publication Date 2022-09-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1101 ISBN Additional Links UA library record; WoS full record
Impact Factor 1.7 Times cited Open Access Not_Open_Access
Notes Approved (up) Most recent IF: 1.7
Call Number UA @ admin @ c:irua:191556 Serial 7312
Permanent link to this record
 
 
Author Bogaerts, A.; Yusupov, M.; Razzokov, J.; Van der Paal, J.
Title Plasma for cancer treatment: How can RONS penetrate through the cell membrane? Answers from computer modeling Type A1 Journal article
Year 2019 Publication Frontiers of Chemical Science and Engineering Abbreviated Journal Front Chem Sci Eng
Volume Issue Pages
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Plasma is gaining increasing interest for cancer

treatment, but the underlying mechanisms are not yet fully

understood. Using computer simulations at the molecular

level, we try to gain better insight in how plasma-generated

reactive oxygen and nitrogen species (RONS) can

penetrate through the cell membrane. Specifically, we

compare the permeability of various (hydrophilic and

hydrophobic) RONS across both oxidized and nonoxidized cell membranes. We also study pore formation,

and how it is hampered by higher concentrations of

cholesterol in the cell membrane, and we illustrate the

much higher permeability of H2O2 through aquaporin

channels. Both mechanisms may explain the selective

cytotoxic effect of plasma towards cancer cells. Finally, we

also discuss the synergistic effect of plasma-induced

oxidation and electric fields towards pore formation.

Keywords plasma medicine, cancer treatment, computer

modelling, cell membrane, reactive oxygen and nitrogen

species
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000468848400004 Publication Date 2019-03-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2095-0179 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.712 Times cited 5 Open Access Not_Open_Access: Available from 23.05.2020
Notes We acknowledge financial support from the Research Foundation–Flanders (FWO; Grant Nos. 1200216N and 11U5416N). The computational work was carried out using the Turing HPC infrastructure at the CalcUA core facility of the Universiteit Antwerpen (UA), a division of the Flemish Supercomputer Center VSC, funded by the Hercules Foundation, the Flemish Government (department EWI) and the UA. We are also very thankful to R. Cordeiro for the very interesting discussions. Approved (up) Most recent IF: 1.712
Call Number PLASMANT @ plasmant @UA @ admin @ c:irua:159977 Serial 5172
Permanent link to this record
 
 
Author Brault, P.; Chamorro-Coral, W.; Chuon, S.; Caillard, A.; Bauchire, J.-M.; Baranton, S.; Coutanceau, C.; Neyts, E.
Title Molecular dynamics simulations of initial Pd and PdO nanocluster growth in a magnetron gas aggregation source Type A1 Journal article
Year 2019 Publication Frontiers of Chemical Science and Engineering Abbreviated Journal Front Chem Sci Eng
Volume 13 Issue 2 Pages 324-329
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Molecular dynamics simulations are carried out for describing growth of Pd and PdO nanoclusters using the ReaxFF force field. The resulting nanocluster structures are successfully compared to those of nanoclusters experimentally grown in a gas aggregation source. The PdO structure is quasi-crystalline as revealed by high resolution transmission microscope analysis for experimental PdO nanoclusters. The role of the nanocluster temperature in the molecular dynamics simulated growth is highlighted.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000468848400009 Publication Date 2019-03-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2095-0179 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.712 Times cited 3 Open Access Not_Open_Access
Notes Approved (up) Most recent IF: 1.712
Call Number UA @ admin @ c:irua:160278 Serial 5276
Permanent link to this record
 
 
Author Van Holsbeke, C.S.; Leemans, G.; Vos, W.G.; de Backer, J.W.; Vinchurkar, S.C.; Geldof, M.; Verdonck, P.R.; Parizel, P.M.; van Schil, P.E.; de Backer, W.A.
Title Functional Respiratory Imaging as a tool to personalize respiratory treatment in subjects with unilateral diaphragmatic paralysis Type A1 Journal article
Year 2013 Publication Respiratory care Abbreviated Journal Resp Care
Volume Issue Pages 1-20
Keywords A1 Journal article; Condensed Matter Theory (CMT); Antwerp Surgical Training, Anatomy and Research Centre (ASTARC); Laboratory Experimental Medicine and Pediatrics (LEMP)
Abstract In two subjects with a unilateral diaphragmatic paralysis and complaints of dyspnea, a completely different treatment approach was chosen despite similar anatomical and physiological abnormalities. These decisions were supported by the results generated by Functional Respiratory Imaging (FRI). FRI was able to generate functional information with respect to lobar ventilation and local drug deposition. In one subject, it was found that some lobes were poorly ventilated and drug deposition simulation showed that some regions were undertreated. This subject underwent a diaphragm plication to restore the ventilation. In the other subject, it was found that all lobes were still ventilated. A conservative approach with regular follow-up was chosen to wait for spontaneous recovery of the diaphragmatic function. Both subjects improved subjectively and objectively. These cases demonstrate how novel medical imaging techniques such as FRI can be used to personalize respiratory treatment in subjects with unilateral diaphragmatic paralysis.
Address
Corporate Author Thesis
Publisher Place of Publication Dallas, Tex. Editor
Language Wos 000349200100024 Publication Date 2013-12-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0020-1324;1943-3654; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.733 Times cited 5 Open Access
Notes ; ; Approved (up) Most recent IF: 1.733; 2013 IF: 1.840
Call Number UA @ lucian @ c:irua:112982 Serial 1303
Permanent link to this record
 
 
Author Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A.
Title Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 173 Issue Pages 285-296
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997XC98100008 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 4 Open Access
Notes Approved (up) Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:20459 Serial 324
Permanent link to this record
 
 
Author Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schaffer, C.
Title Hetero-epitaxial growth of CoSi2 thin films on Si(100) : template effects and epitaxial orientations Type A1 Journal article
Year 1998 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 191 Issue 3 Pages 430-438
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract This HREM investigation focuses on the influence of point defects on the final epitaxial relation and atomic interface configuration in a CoSi2/Si(1 0 0) heterostructure. A two-step SPE-MBE grown CoSi2/Si(1 0 0) system is used and, by altering the number of deposited Co monolayers in the template layer, the point defect behavior is studied. We propose a film growth model in which the knowledge about the reconstructed (2 x 1) : Si(1 0 0) surface, the point defect behavior in the presence of an interface, especially a silicide interface, the migration of point defects through a lattice by formation of [1 0 0]-split interstitial (dumbbell) atomic configurations, and a new type of extended defect configurations in diamond type materials will all amalgamate. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000075032500017 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 6 Open Access
Notes Approved (up) Most recent IF: 1.751; 1998 IF: 1.307
Call Number UA @ lucian @ c:irua:102930 Serial 1418
Permanent link to this record
 
 
Author Stefan, M.; Nistor, S.V.; Mateescu, D.C.; Abakumov, A.M.
Title Growth of pure and doped Rb2ZnCl4and K2ZnCl4 single crystals by Czochralski technique Type A1 Journal article
Year 1999 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 200 Issue 1-2 Pages 148-154
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract High-quality single crystals of Rb2ZnCl4 and K2ZnCl4, pure or doped with Cu, Mn, Cd, Tl, Sn, Pb and In cations, were grown by Czochralski technique in argon atmosphere, using an experimental setup that allows direct visual access to the whole growth zone. Slowly cooled crystals exhibit excellent cleavage properties. Fastly cooled crystals do cleave poorly. As shown by X-ray diffraction studies, such K2ZnCl4 samples exhibit inclusions of the high-temperature Pmcn phase with lattice parameters a = 7.263(2) Angstrom, b = 12.562(2) Angstrom and c = 8.960(4) Angstrom in the P2(1) cn room temperature stable phase. ESR and optical spectroscopy studies revealed the localization and valence state of the cation dopants. (C) 1999 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000079840600021 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 13 Open Access
Notes Approved (up) Most recent IF: 1.751; 1999 IF: 1.492
Call Number UA @ lucian @ c:irua:102909 Serial 1395
Permanent link to this record
 
 
Author Lei, C.H.; Van Tendeloo, G.; Lisoni, J.G.; Siegert, M.; Schubert, J.
Title Growth kinetic of MgO film on r-plane of sapphire: microstructural study Type A1 Journal article
Year 2001 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 226 Issue 2/3 Pages 419-429
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000169535100029 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 7 Open Access
Notes Approved (up) Most recent IF: 1.751; 2001 IF: 1.283
Call Number UA @ lucian @ c:irua:54783 Serial 1391
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Author Lei, C.H.; Van Tendeloo, G.; Siegert, M.; Schubert, J.; Buchal, C.
Title Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation Type A1 Journal article
Year 2001 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 222 Issue 3 Pages 558-564
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Yittria-stabilized zirconia (YSZ) films doped with 3 and 9 vol%. Y(2)O(3), respectively, are epitaxially deposited on (0 0 1) silicon substrates by means of pulsed laser deposition (PLD) technique. Transmission electron microscopy (TEM) and X-ray diffraction are mainly combined to study the film microstructure. It is: found that the film structure strongly depends on the amount of Y(2)O(3) dopant. 99/0 Y(2)O(3)-doped films display a near cubic structure; 45 degrees 1/2(1 1 0) dislocations are the main defects in the film and thermal cracks are formed during cooling. The 3% Y(2)O(3)-doped films are dominated by {1 1 0} twin-related tetragonal domains in which monoclinic phase is found. The films are free of thermal cracks even for films thicker than 2 mum. (C) 2001 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000166701500020 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 12 Open Access
Notes Approved (up) Most recent IF: 1.751; 2001 IF: 1.283
Call Number UA @ lucian @ c:irua:104211 Serial 3240
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Author Jacobs, K.; van Daele, B.; Leys, M.; Moerman, I.; Van Tendeloo, G.
Title Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures Type A1 Journal article
Year 2003 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 248 Issue Pages 498-502
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000180446900091 Publication Date 2002-12-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 14 Open Access
Notes was dubbel; dubbel eruit gehaald Approved (up) Most recent IF: 1.751; 2003 IF: 1.414
Call Number UA @ lucian @ c:irua:54785 Serial 810
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Author Pardo, J.A.; Santiso, J.; Solis, C.; Garcia, G.; Figueras, A.; Rossell, M.D.; Van Tendeloo, G.
Title Epitaxial Sr4Fe6O13\pm\delta films obtained by pulsed laser deposition Type A1 Journal article
Year 2004 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 262 Issue Pages 334-340
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000189098700052 Publication Date 2003-11-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 8 Open Access
Notes Iap V-1 Approved (up) Most recent IF: 1.751; 2004 IF: 1.707
Call Number UA @ lucian @ c:irua:54786 Serial 1074
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Author Nistor, L.C.; Ghica, C.; Matei, D.; Dinescu, G.; Dinescu, M.; Van Tendeloo, G.
Title Growth and characterization of a-axis textured ZnO thin films Type A1 Journal article
Year 2005 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 277 Issue Pages 26-31
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000228737900005 Publication Date 2005-02-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 44 Open Access
Notes Bil 01/73 Approved (up) Most recent IF: 1.751; 2005 IF: 1.681
Call Number UA @ lucian @ c:irua:54787 Serial 1390
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Author Bal, K.M.; Cautereels, J.; Blockhuys, F.
Title Structures and spectroscopic properties of sulfur-nitrogen-pnictogen chains : R2P-N=S=N-PR2 and R2P-N=S=N-AsR2 Type A1 Journal article
Year 2017 Publication Journal of molecular structure Abbreviated Journal J Mol Struct
Volume 1132 Issue Pages 102-108
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The conformational and configurational preferences of Me2PNSNPMe2 (3) and Me2PNSNAsMe2 (4) have been identified using quantum chemical calculations at the DFT/B3LYP/6-311+G* level of theory. An approach in which energetic, structural (geometries and bond orders), electronic (analysis of the electron density) and spectroscopic properties are combined leads to the conclusion that these sulfur-nitrogen-pnictogen chains share many of the properties of their chalcogen-nitrogen analogues but that the through-space intramolecular interactions favouring the Z,Z configuration are even weaker than in these latter compounds. The results of this analysis also lead to an unambiguous assignment of the variable-temperature 31P and 15N NMR spectra of these compounds and their structures both in solution and in the solid state.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000393254400015 Publication Date 2016-08-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-2860 ISBN Additional Links UA library record; WoS full record
Impact Factor 1.753 Times cited Open Access Not_Open_Access: Available from 03.10.2019
Notes Approved (up) Most recent IF: 1.753
Call Number UA @ lucian @ c:irua:145533 Serial 4726
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Author Gezahegn, T.W.; Van Passel, S.; Berhanu, T.; D'Haese, M.; Maertens, M.
Title Big is efficient : evidence from agricultural cooperatives in Ethiopia Type A1 Journal article
Year 2019 Publication Agricultural Economics Abbreviated Journal Agr Econ-Blackwell
Volume 50 Issue 50 Pages 555-566
Keywords A1 Journal article; Economics; Engineering Management (ENM)
Abstract In Ethiopia, there is a renewed interest in agricultural cooperatives as an institutional tool to improve the welfare of smallholder farmers. One of the pathways through which cooperatives benefit their members is scale economies. However, the establishment of cooperatives in Ethiopia seems to pay little attention to the size of the organizations. This article aims at investigating the effect of size on cost efficiency of agricultural cooperatives. More specifically, the purpose is to examine whether a single cooperative can serve a given number of farmers at a lower cost than two or more smaller cooperatives could. We employ the concept of cost subadditivity to compare the cost efficiency of large versus small cooperatives, and by extension unilateral actions. We estimate a flexible production technology using cross-sectional cooperative-level data. Findings show that costs would drop by 78% to 181% if farmers join hands in relatively large rather than small cooperatives.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000480797700001 Publication Date 2019-08-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0169-5150 ISBN Additional Links UA library record; WoS full record
Impact Factor 1.758 Times cited Open Access
Notes ; VLIR-UOS-ZEIN2015PR406 (13V95615T) PROGRAMME(TEAM), Belgium ; Approved (up) Most recent IF: 1.758
Call Number UA @ admin @ c:irua:161812 Serial 6161
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Author Bafekry, A.; Ghergherehchi, M.; Shayesteh, S.F.; Peeters, F.M.
Title Adsorption of molecules on C3N nanosheet : a first-principles calculations Type A1 Journal article
Year 2019 Publication Chemical physics Abbreviated Journal Chem Phys
Volume 526 Issue 526 Pages 110442
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Using first-principles calculations we investigate the interaction of various molecules, including H-2, N-2, CO, CO2, H2O, H2S, NH3, CH4 with a C3N nanosheet. Due to the weaker interaction between H-2, N-2, CO, CO2, H2O, H2S, NH3, and CH4 molecules with C3N, the adsorption energy is small and does not yield any significant distortion of the C3N lattice and the molecules are physisorbed. Calculated charge transfer shows that these molecules act as weak donors. However, adsorption of O-2, NO, NO2 and SO2 molecules are chemisorbed, they receive electrons from C3N and act as a strong acceptor. They interact strongly through hybridizing its frontier orbitals with the p-orbital of C3N, modifying the electronic structure of C3N. Our theoretical studies indicate that C3N-based sensor has a high potential for O-2, NO, NO2 and SO2 molecules detection.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000481606000006 Publication Date 2019-07-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0301-0104 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.767 Times cited 52 Open Access
Notes ; This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2017R1A2B2011989). In addition, this work was supported by the FLAG-ERA project 2DTRANS and the Flemish Science Foundation (FWO-Vl). ; Approved (up) Most recent IF: 1.767
Call Number UA @ admin @ c:irua:161779 Serial 5405
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Author Kukhlevsky, S.V.; Mechler, M.; Csapo, L.; Janssens, K.
Title Near-field diffraction of fs and sub-fs pulses: super resolution of NSOM in space and time Type A1 Journal article
Year 2003 Publication Physics letters : A Abbreviated Journal Phys Lett A
Volume 319 Issue Pages 439-447
Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000187351800003 Publication Date 2003-11-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0375-9601 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.772 Times cited 10 Open Access
Notes Approved (up) Most recent IF: 1.772; 2003 IF: 1.324
Call Number UA @ admin @ c:irua:42959 Serial 5744
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Author Rouaiguia, L.; Djebli, M.; Peeters, F.
Title Random charge fluctuation effect on strongly correlated dust particles confined in two dimensions Type A1 Journal article
Year 2008 Publication Physics letters : A Abbreviated Journal Phys Lett A
Volume 372 Issue 24 Pages 4487-4492
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000257203700030 Publication Date 2008-04-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0375-9601; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.772 Times cited 4 Open Access
Notes Approved (up) Most recent IF: 1.772; 2008 IF: 2.174
Call Number UA @ lucian @ c:irua:69627 Serial 2809
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Author Ekimov, E.A.; Kudryavtsev, O.S.; Turner, S.; Korneychuk, S.; Sirotinkin, V.P.; Dolenko, T.A.; Vervald, A.M.; Vlasov, I.I.
Title The effect of molecular structure of organic compound on the direct high-pressure synthesis of boron-doped nanodiamond: Effect of organic compound on synthesis of boron-doped nanodiamond Type A1 Journal article
Year 2016 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A
Volume 213 Issue 213 Pages 2582-2589
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Evolution of crystalline phases with temperature has been studied in materials produced by high-pressure high-temperature treatment of 9-borabicyclo[3.3.1]nonane dimer (9BBN), triphenylborane and trimesitylborane. The boron-doped diamond nanoparticles with a size below 10 nm were obtained at 8–9 GPa and temperatures 970–1250 °C from 9BBN only. Bridged structure and the presence of boron atom in the carbon cycle of 9BBN were revealed to be a key point for the direct synthesis of doped diamond nanocrystals. The diffusional transformation of the disordered carbon phase is suggested to be the main mechanism of the nanodiamond formation from 9BBN in the temperature range of 970–1400 °C. Aqueous suspensions of primary boron-doped diamond nanocrystals were prepared upon removal of non-diamond phases that opens wide opportunities for application of this new nanomaterial in electronics and biotechnologies.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000388321500006 Publication Date 2016-07-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.775 Times cited 8 Open Access
Notes Approved (up) Most recent IF: 1.775
Call Number EMAT @ emat @ c:irua:135175 Serial 4120
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Author Garud, S.; Gampa, N.; Allen, T.G.; Kotipalli, R.; Flandre, D.; Batuk, M.; Hadermann, J.; Meuris, M.; Poortmans, J.; Smets, A.; Vermang, B.
Title Surface passivation of CIGS solar cells using gallium oxide Type A1 Journal article
Year 2018 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A
Volume 215 Issue 7 Pages 1700826
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000430128500015 Publication Date 2018-02-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.775 Times cited 8 Open Access Not_Open_Access
Notes ; The work published in this paper was supported by the European Research Council (ERC) under the Union's Horizon 2020 research and innovation programme (grant agreement No 715027). The authors would also like to thank Dr. Marcel Simor (Solliance) for the CIGS layer fabrication and Prof. Johan Lauwaert (Universtiy of Ghent) for his guidance on DLTS measurements. ; Approved (up) Most recent IF: 1.775
Call Number UA @ lucian @ c:irua:150761 Serial 4981
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Author Willems, B.; Martineau, P.M.; Fisher, D.; van Royen, J.; Van Tendeloo, G.
Title Dislocation distributions in brown diamond Type A1 Journal article
Year 2006 Publication Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A
Volume 203 Issue 12 Pages 3076-3080
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos 000240967400014 Publication Date 2006-09-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6300;1862-6319; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.775 Times cited 21 Open Access
Notes Approved (up) Most recent IF: 1.775; 2006 IF: NA
Call Number UA @ lucian @ c:irua:61002 Serial 730
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Author Vansweevelt, R.; Mortet, V.; D' Haen, J.; Ruttens, bart; van Haesendonck, C.; Partoens, B.; Peeters, F.M.; Wagner, P.
Title Study on the giant positive magnetoresistance and Hall effect in ultrathin graphite flakes Type A1 Journal article
Year 2011 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A
Volume 208 Issue 6 Pages 1252-1258
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract In this paper, we report on the electronic transport properties of mesoscopic, ultrathin graphite flakes with a thickness corresponding to a stack of 150 graphene layers. The graphite flakes show an unexpectedly strong positive magnetoresistance (PMR) already at room temperature, which scales in good approximation with the square of the magnetic field. Furthermore, we show that the resistivity is unaffected by magnetic fields oriented in plane with the graphene layers. Hall effect measurements indicate that the charge carriers are p-type and their concentration increases with increasing temperature while the mobility is decreasing. The Hall voltage is non-linear in higher magnetic fields. Possible origins of the observed effects are discussed. Ball and stick model of the two topmost carbon layers of the hexagonal graphite structure.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000292945800008 Publication Date 2011-02-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.775 Times cited 8 Open Access
Notes ; The authors gratefully acknowledge the support by FWO – Research Foundation Flanders (project G.0159.07 “Structural and electronic properties of biologically modified, graphene-based layers”), by the Federal Belgian Interuniversity Attraction Poles Programme BELSPO (project TAP VI P6/42 “Quantum effects in clusters and nanowires”) and by the Methusalem network “NANO – Antwerp-Hasselt,” funded by the Flemish Community. Technical assistance by Stoffel D. Janssens (magnet calibration and software development), Dr. Hong Yin (AFM-based thickness studies), Dr. Ronald Thoelen (data analysis), and Prof. Hans-Gerd Boyen (XPS spectroscopy) is greatly appreciated. ; Approved (up) Most recent IF: 1.775; 2011 IF: 1.463
Call Number UA @ lucian @ c:irua:91941 Serial 3343
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