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Author |
Lei, C.H.; Van Tendeloo, G.; Siegert, M.; Schubert, J.; Buchal, C. |
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Title |
Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation |
Type |
A1 Journal article |
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Year  |
2001 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
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Volume |
222 |
Issue |
3 |
Pages |
558-564 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Yittria-stabilized zirconia (YSZ) films doped with 3 and 9 vol%. Y(2)O(3), respectively, are epitaxially deposited on (0 0 1) silicon substrates by means of pulsed laser deposition (PLD) technique. Transmission electron microscopy (TEM) and X-ray diffraction are mainly combined to study the film microstructure. It is: found that the film structure strongly depends on the amount of Y(2)O(3) dopant. 99/0 Y(2)O(3)-doped films display a near cubic structure; 45 degrees 1/2(1 1 0) dislocations are the main defects in the film and thermal cracks are formed during cooling. The 3% Y(2)O(3)-doped films are dominated by {1 1 0} twin-related tetragonal domains in which monoclinic phase is found. The films are free of thermal cracks even for films thicker than 2 mum. (C) 2001 Elsevier Science B.V. All rights reserved. |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Wos |
000166701500020 |
Publication Date |
2002-07-25 |
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ISSN |
0022-0248; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.751 |
Times cited |
12 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.751; 2001 IF: 1.283 |
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Call Number |
UA @ lucian @ c:irua:104211 |
Serial |
3240 |
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| Permanent link to this record |
