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Author Lei, C.H.; Van Tendeloo, G.; Siegert, M.; Schubert, J.; Buchal, C. pdf  doi
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  Title Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation Type A1 Journal article
  Year (down) 2001 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 222 Issue 3 Pages 558-564  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Yittria-stabilized zirconia (YSZ) films doped with 3 and 9 vol%. Y(2)O(3), respectively, are epitaxially deposited on (0 0 1) silicon substrates by means of pulsed laser deposition (PLD) technique. Transmission electron microscopy (TEM) and X-ray diffraction are mainly combined to study the film microstructure. It is: found that the film structure strongly depends on the amount of Y(2)O(3) dopant. 99/0 Y(2)O(3)-doped films display a near cubic structure; 45 degrees 1/2(1 1 0) dislocations are the main defects in the film and thermal cracks are formed during cooling. The 3% Y(2)O(3)-doped films are dominated by {1 1 0} twin-related tetragonal domains in which monoclinic phase is found. The films are free of thermal cracks even for films thicker than 2 mum. (C) 2001 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000166701500020 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 12 Open Access  
  Notes Approved Most recent IF: 1.751; 2001 IF: 1.283  
  Call Number UA @ lucian @ c:irua:104211 Serial 3240  
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