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  Author Title Year Publication Volume Times cited Additional Links Links
de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon 1999 The review of scientific instruments 70 5 UA library record; WoS full record; WoS citing articles doi
De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers 1999 Microelectronic engineering 45 UA library record; WoS full record doi
Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. The study of high Tc-superconducting materials by electron microscopy and electron diffraction 1991 Superconductor science and technology T2 – SATELLITE CONF TO THE 19TH INTERNATIONAL CONF ON LOW TEMPERATURE PHYSICS : HIGH TEMPERATURE SUPERCONDUCTIVITY, AUG 13-15, 1990, QUEENS COLL, CAMBRIDGE, ENGLAND 4 2 UA library record; WoS full record; WoS citing articles pdf doi
Teodorescu, V.S.; Mihailescu, I.N.; Gyorgy, E.; Luches, A.; Martino, M.; Nistor, L.C.; van Landuyt, J.; Hermann, J. The study of a crater forming on the surface of a Ti target submitted to multipulse excimer laser irradiation under low pressure N2 1996 Journal of modern optics 43 11 UA library record; WoS full record; WoS citing articles doi
Cassiers, K.; van der Voort, P.; Linssen, T.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. A counterion-catalyzed (S0H+)(X-I+) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions 2003 The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical 107 9 UA library record; WoS full record; WoS citing articles doi
Luyten, W.; Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Férauge, C.; Gijbels, R.; Vasilev, M.G.; Shelyakin, A.A.; Lazarev, V.B. Electron microscopy and mass-spectrometry study of In0.72Ga0.28As0.62P0.38 lasers grown by liquid phase epitaxy 1993 Physica status solidi: A: applied research 140 3 UA library record; WoS full record; WoS citing articles doi
Ivanov, V.; Nagy, J.B.; Lambin, P.; Lucas, A.; Zhang, X.B.; Zhang, X.F.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J. The study of carbon nanotubules produced by catalytic method 1994 Chemical physics letters 223 405 UA library record; WoS full record; WoS citing articles pdf doi
Xu, T.; Wang, P.; Fang, P.; Kan, Y.; Chen, L.; Vleugels, J.; Van der Biest, O.; van Landuyt, J. Phase assembly and microstructure of CeO2-doped ZrO2 ceramics prepared by spark plasma sintering 2005 Journal of the European Ceramic Society 25 13 UA library record; WoS full record; WoS citing articles doi
Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G. Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures 2001 Journal of the electrochemical society 148 13 UA library record; WoS full record; WoS citing articles pdf doi
Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study 2000 UA library record; WoS full record;
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. Structural characterisation of erbium silicide thin films of an Si(111) substrate 1996 Journal of alloys and compounds 234 14 UA library record; WoS full record; WoS citing articles pdf doi
De Meulenaere, P.; van Dyck, D.; Van Tendeloo, G.; van Landuyt, J. Dynamical electron diffraction in substitutionally disordered column structures 1995 Ultramicroscopy 60 14 UA library record; WoS full record; WoS citing articles pdf doi
Nistor, L.C.; Nistor, S.V.; Dinca, G.; Georgeoni, P.; van Landuyt, J.; Manfredotti, C.; Vittone, E. Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions 2002 Journal of physics : condensed matter 14 7 UA library record; WoS full record; WoS citing articles pdf url doi
Volkov, V.V.; van Landuyt, J.; Marushkin, K.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas 1997 Sensors and actuators : A : physical 62 3 UA library record; WoS full record; WoS citing articles pdf doi
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation 1999 Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM 1999 Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171 40 UA library record; WoS full record; WoS citing articles doi
Zhang, X.F.; Zhang, X.B.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J.; Werner, H. A simple preparation method for air-sensitive specimens for transmission electron microscopy demonstrated by Rb6C60 1994 Ultramicroscopy 55 2 UA library record; WoS full record; WoS citing articles pdf doi
Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization 2000 Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA 338-3 2 UA library record; WoS full record; WoS citing articles
Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. Photoelectric and electrical responses of several erbium silicide/silicon interfaces 1996 Applied surface science T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE 102 3 UA library record; WoS full record; WoS citing articles pdf doi
de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon 2003 Physica: B : condensed matter T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK 340 4 UA library record; WoS full record; WoS citing articles doi
De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy 2002 UA library record; WoS full record;
de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy 2004 Journal of the electrochemical society 151 13 UA library record; WoS full record; WoS citing articles pdf doi
de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM 2001 Physica: B : condensed matter T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY 308 3 UA library record; WoS full record; WoS citing articles pdf doi
Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques 2002 Journal of applied physics 91 27 UA library record; WoS full record; WoS citing articles pdf doi
van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. The influence of crystal thickness on the image tone 2003 Journal of imaging science 47 UA library record; WoS full record; WoS citing articles
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.; Dinescu, M. TEM study of laser induced phase transition in iron thin films 1994 Materials research bulletin 29 2 UA library record; WoS full record; WoS citing articles pdf doi
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. EFTEM study of plasma etched low-k Si-O-C dielectrics 2001 Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Schryvers, D.; Van Landuyt, J. Electron microscopy study of twin sequences and branching in NissAl34 3R martensite 1992 ICOMAT pdf
Bernaerts, D.; op de Beeck, M.; Amelinckx, S.; van Landuyt, J.; Van Tendeloo, G. The chirality of carbon nanotubules determined by dark-field electron microscopy 1996 Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 74 20 UA library record; WoS full record; WoS citing articles pdf doi
Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C. The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals 2000 UA library record; WoS full record;
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