| Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
| Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J. |
Reliability of copper dual damascene influenced by pre-clean |
2002 |
Analysis Of Integrated Circuits |
|
5 |
UA library record; WoS full record; WoS citing articles |
| Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. |
Stress analysis with convergent beam electron diffraction around NMOS transistors |
2001 |
|
|
|
UA library record; WoS full record; |
| Vanhellemont, J.; Bender, H.; van Landuyt, J. |
TEM studies of processed Si device materials |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
| Vereecke, G.; De Coster, H.; Van Alphen, S.; Carolan, P.; Bender, H.; Willems, K.; Ragnarsson, L.-A.; Van Dorpe, P.; Horiguchi, N.; Holsteyns, F. |
Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors |
2018 |
Microelectronic engineering |
200 |
|
UA library record; WoS full record; WoS citing articles |
