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Author Van Aert, S.; den Dekker, A.J.; van Dyck, D.
Title How to optimize the experimental design of quantitative atomic resolution TEM experiments? Type A1 Journal article
Year 2004 Publication Micron Abbreviated Journal (down) Micron
Volume 35 Issue Pages 425-429
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000221721000005 Publication Date 2004-03-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.98 Times cited 14 Open Access
Notes Approved Most recent IF: 1.98; 2004 IF: 1.464
Call Number UA @ lucian @ c:irua:47514 Serial 1495
Permanent link to this record
 
 
Author Xu, Q.; Zandbergen, H.W.; van Dyck, D.
Title Imaging from atomic structure to electronic structure Type A1 Journal article
Year 2012 Publication Micron Abbreviated Journal (down) Micron
Volume 43 Issue 4 Pages 524-531
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract This paper discusses the possibility of retrieving the electron distribution (with highlighted valence electron distribution information) of materials from recorded HREM images. This process can be achieved by solving two inverse problems: reconstruction of the exit wave and reconstruction of the electron distribution from exit waves. The first inverse problem can be solved using a focal series reconstruction method. We show that the second inverse problem can be solved by combining a series of exit waves recorded at different thickness conditions. This process is designed based on an improved understanding of the dynamical scattering process. It also explains the fundamental difficulty of obtaining the valence electron distribution information and the basis of our solution.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000301702400005 Publication Date 2011-11-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.98 Times cited Open Access
Notes Fwo Approved Most recent IF: 1.98; 2012 IF: 1.876
Call Number UA @ lucian @ c:irua:93634 Serial 1553
Permanent link to this record
 
 
Author Van Aert, S.; van den Broek, W.; Goos, P.; van Dyck, D.
Title Model-based electron microscopy : from images toward precise numbers for unknown structure parameters Type A1 Journal article
Year 2012 Publication Micron Abbreviated Journal (down) Micron
Volume 43 Issue 4 Pages 509-515
Keywords A1 Journal article; Engineering Management (ENM); Electron microscopy for materials research (EMAT); Vision lab
Abstract Statistical parameter estimation theory is proposed as a method to quantify electron microscopy images. It aims at obtaining precise and accurate values for the unknown structure parameters including, for example, atomic column positions and types. In this theory, observations are purely considered as data planes, from which structure parameters have to be determined using a parametric model describing the images. The method enables us to measure positions of atomic columns with a precision of the order of a few picometers even though the resolution of the electron microscope is one or two orders of magnitude larger. Moreover, small differences in averaged atomic number, which cannot be distinguished visually, can be quantified using high-angle annular dark field scanning transmission electron microscopy images. Finally, it is shown how to optimize the experimental design so as to attain the highest precision. As an example, the optimization of the probe size for nanoparticle radius measurements is considered. It is also shown how to quantitatively balance signal-to-noise ratio and resolution by adjusting the probe size.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000301702400003 Publication Date 2011-11-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.98 Times cited 7 Open Access
Notes Fwo Approved Most recent IF: 1.98; 2012 IF: 1.876
Call Number UA @ lucian @ c:irua:94114 Serial 2099
Permanent link to this record
 
 
Author Kirilenko, D.A.; Dideykin, A.T.; Aleksenskiy, A.E.; Sitnikova, A.A.; Konnikov, S.G.; Vul', A.Y.
Title One-step synthesis of a suspended ultrathin graphene oxide film: Application in transmission electron microscopy Type A1 Journal article
Year 2015 Publication Micron Abbreviated Journal (down) Micron
Volume 68 Issue 68 Pages 23-26
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Ultrathin graphene films find their use as advantageous support for nano- and biomaterials investigations. Thin film causes a very slight deterioration to measured signals, thus providing more details of the object's structure at nanoscale. The ultimate thinness of graphene works in the best way for this purpose. However, obtaining suspended thin film of a large-area, which is convenient for applications, is often a relatively complicated and time-consuming task. Here we present a one-step 1-min technique for synthesis of an extremely thin (about 1-2 nm) continuous film suspended over cells of a conventional copper grid (50-400 mu m mesh). This technique enables us to acquire a large-area film which is water-resistant, stable in organic solvents and can act as a support when studying nanoparticles or biomaterials. Moreover, the very mechanism of the film formation can be interesting from the point of view of other applications of ultrathin graphene oxide papers. (C) 2014 Elsevier Ltd. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000348016500004 Publication Date 2014-08-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.98 Times cited 13 Open Access
Notes Approved Most recent IF: 1.98; 2015 IF: 1.988
Call Number c:irua:123800 Serial 2467
Permanent link to this record
 
 
Author Yang, Z.; Schryvers, D.
Title Study of changes in composition and EELS ionization edges upon Ni4Ti3 precipitation in a NiTi alloy Type A1 Journal article
Year 2006 Publication Micron Abbreviated Journal (down) Micron
Volume 37 Issue 5 Pages 503-507
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000238806400020 Publication Date 2005-09-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.98 Times cited 10 Open Access
Notes Approved Most recent IF: 1.98; 2006 IF: 1.200
Call Number UA @ lucian @ c:irua:59605 Serial 3327
Permanent link to this record
 
 
Author Leroux, O.; Leroux, F.; Bagniewska-Zadworna,.; Knox, J.P.; Claeys, M.; Bals, S.; Viane, R.L.L.
Title Ultrastructure and composition of cell wall appositions in the roots of Asplenium (Polypodiales) Type A1 Journal article
Year 2011 Publication Micron Abbreviated Journal (down) Micron
Volume 42 Issue 8 Pages 863-870
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Cell wall appositions (CWAs), formed by the deposition of extra wall material at the contact site with microbial organisms, are an integral part of the response of plants to microbial challenge. Detailed histological studies of CWAs in fern roots do not exist. Using light and electron microscopy we examined the (ultra)structure of CWAs in the outer layers of roots of Asplenium species. All cell walls studded with CWAs were impregnated with yellow-brown pigments. CWAs had different shapes, ranging from warts to elongated branched structures, as observed with scanning and transmission electron microscopy. Ultrastructural study further showed that infecting fungi grow intramurally and that they are immobilized by CWAs when attempting to penetrate intracellularly. Immunolabelling experiments using monoclonal antibodies indicated pectic homogalacturonan, xyloglucan, mannan and cellulose in the CWAs, but tests for lignins and callose were negative. We conclude that these appositions are defense-related structures made of a non-lignified polysaccharide matrix on which phenolic compounds are deposited in order to create a barrier protecting the root against infections.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000294942600013 Publication Date 2011-06-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.98 Times cited 20 Open Access
Notes Fwo Approved Most recent IF: 1.98; 2011 IF: 1.527
Call Number UA @ lucian @ c:irua:92540 Serial 3798
Permanent link to this record
 
 
Author Samaeeaghmiyoni, V.; Idrissi, H.; Groten, J.; Schwaiger, R.; Schryvers, D.
Title Quantitative in-situ TEM nanotensile testing of single crystal Ni facilitated by a new sample preparation approach Type A1 Journal article
Year 2017 Publication Micron Abbreviated Journal (down) Micron
Volume 94 Issue 94 Pages 66-73
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Twin-jet electro-polishing and Focused Ion Beam (FIB) were combined to produce small size Nickel single crystal specimens for quantitative in-situ nanotensile experiments in the transmission electron microscope. The combination of these techniques allows producing samples with nearly defect-free zones in the centre in contrast to conventional FIB-prepared samples. Since TEM investigations can be performed on the electro-polished samples prior to in-situ TEM straining, specimens with desired crystallographic orientation and initial microstructure can be prepared. The present results reveal a dislocation nucleation controlled plasticity, in which small loops induced by FIB near the edges of the samples play a central role.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000393247300008 Publication Date 2016-12-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.98 Times cited 11 Open Access OpenAccess
Notes This research has been performed with the financial support of the Belgian Science Policy (Belspo) under the framework of the interuniversity attraction poles program, IAP7/21. Financial support from the Flemish (FWO) and German Research Foundation (DFG) through the European M-ERA.NET project “FaSS” (Fatigue Simulation near Surfaces) under the grant numbers GA.014.13N and SCHW855/5-1, respectively, is gratefully acknowledged. V. Samaeeaghmiyoni also acknowledges the FWO research project G012012N “Understanding nanocrystalline mechanical behaviour from structural investigations”. H. Idrissi is currently mandated by the Belgian National Fund for Scientific Research (FSR-FNRS). Approved Most recent IF: 1.98
Call Number EMAT @ emat @ c:irua:139515 Serial 4341
Permanent link to this record
 
 
Author Cooper, D.; Denneulin, T.; Bernier, N.; Béché, A.; Rouvière, J.-L.
Title Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope Type A1 Journal article
Year 2016 Publication Micron Abbreviated Journal (down) Micron
Volume 80 Issue 80 Pages 145-165
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The last few years have seen a great deal of progress in the development of transmission electron microscopy based techniques for strain mapping. New techniques have appeared such as dark field electron holography and nanobeam diffraction and better known ones such as geometrical phase analysis have been improved by using aberration corrected ultra-stable modern electron microscopes. In this paper we apply dark field electron holography, the geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images, nanobeam diffraction and precession diffraction, all performed at the state-of-the-art to five different types of semiconductor samples. These include a simple calibration structure comprising 10-nm-thick SiGe layers to benchmark the techniques. A SiGe recessed source and drain device has been examined in order to test their capabilities on 2D structures. Devices that have been strained using a nitride stressor have been examined to test the sensitivity of the different techniques when applied to systems containing low values of deformation. To test the techniques on modern semiconductors, an electrically tested device grown on a SOI wafer has been examined. Finally a GaN/AlN superlattice was tested in order to assess the different methods of measuring deformation on specimens that do not have a perfect crystalline structure. The different deformation mapping techniques have been compared to one another and the strengths and weaknesses of each are discussed.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000366770100018 Publication Date 2015-09-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.98 Times cited 50 Open Access
Notes Approved Most recent IF: 1.98
Call Number UA @ lucian @ c:irua:136446 Serial 4401
Permanent link to this record
 
 
Author Godet, M.; Vergès-Belmin, V.; Gauquelin, N.; Saheb, M.; Monnier, J.; Leroy, E.; Bourgon, J.; Verbeeck, J.; Andraud, C.
Title Nanoscale investigation by TEM and STEM-EELS of the laser induced yellowing Type A1 Journal article
Year 2018 Publication Micron Abbreviated Journal (down) Micron
Volume 115 Issue Pages 25-31
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Nd-YAG QS laser cleaning of soiled stone at 1064 nm can sometimes result in a more yellow appearance compared to other cleaning techniques. Especially in France, this yellowing effect is still considered as a major aesthetic issue by the architects and conservators. One explanation states that the yellowing is linked to the formation of iron-rich nanophase(s) through the laser beam interaction with black crusts that would re-deposit on the cleaned substrate after irradiation. To characterize these nanophases, a model crust containing hematite was elaborated and laser irradiated using a Nd-YAG QS laser. The color of the sample shifted instantaneously from red to a bright yellow and numerous particles were ablated in a visible smoke. Transmission electron microscopy (TEM) was used to examine the morphology and the crystallinity of the neo-formed compounds, both on the surface of the samples and in the ablated materials. In addition, an investigation of the chemical and structural properties of the nanophases was conducted by X-ray dispersive energy (EDX) and electron energy loss (EELS) spectroscopies. It was found that both the surface of the sample and the ablated materials are covered by crystallized nano-spheres and nano-residues, all containing iron and oxygen, sometimes along with calcium and sulfur. In particular an interfacial area containing the four elements was evidenced between some nanostructures and the substrate. Magnetite Fe3O4 was also identified at the nanoscale. This study demonstrates that the laser yellowing of a model crust is linked to the presence of iron-rich nanophases including CaxFeySzOδ nanostructures and magnetite Fe3O4 at the surface after irradiation.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000449125600004 Publication Date 2018-08-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.98 Times cited 9 Open Access Not_Open_Access: Available from 19.08.2020
Notes The authors wish to thank Valérie Lalanne for the sample preparation for TEM and Stijn Van den Broeck for the FIB cut elaboration. The research leading to these results has received funding from the European Union Seventh Framework Programme under Grant Agreement 312483 – ESTEEM2 (Integrated Infrastructure Initiative–I3). Approved Most recent IF: 1.98
Call Number EMAT @ emat @c:irua:154356UA @ admin @ c:irua:154356 Serial 5056
Permanent link to this record
 
 
Author De Meyer, R.; Albrecht, W.; Bals, S.
Title Effectiveness of reducing the influence of CTAB at the surface of metal nanoparticles during in situ heating studies by TEM Type A1 Journal article
Year 2021 Publication Micron Abbreviated Journal (down) Micron
Volume 144 Issue Pages 103036
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In situ TEM is a valuable technique to offer novel insights in the behavior of nanomaterials under various conditions. However, interpretation of in situ experiments is not straightforward since the electron beam can impact the outcome of such measurements. For example, ligands surrounding metal nanoparticles transform into a protective carbon layer upon electron beam irradiation and may impact the apparent thermal stability during in situ heating experiments. In this work, we explore the effect of different treatments typically proposed to remove such ligands. We found that plasma treatment prior to heating experiments for Au nanorods and nanostars increased the apparent thermal stability of the nanoparticles, while an activated carbon treatment resulted in a decrease of the observed thermal stability. Treatment with HCl barely changed the experimental outcome. These results demonstrate the importance of carefully selecting pre-treatments procedures during in situ heating experiments.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000632282600002 Publication Date 2021-02-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328 ISBN Additional Links UA library record; WoS full record
Impact Factor 1.98 Times cited Open Access OpenAccess
Notes H2020; European Research Council; This work was supported by the European Union’s Horizon 2020 research and innovation program [grant agreement No 823717 (ESTEEM3) and No 815128 (REALNANO)]; We acknowledge Prof. Luis M. Liz-Marzán and co-workers of the Bionanoplasmonics Laboratory, CICbiomaGUNE, Spain for providing the Au nanoparticles.; sygma; esteem3jra; esteem3reported Approved Most recent IF: 1.98
Call Number EMAT @ emat @c:irua:175874 Serial 6677
Permanent link to this record
 
 
Author Leenaerts, O.; Partoens, B.; Peeters, F.M.
Title Adsorption of small molecules on graphene Type A1 Journal article
Year 2009 Publication Microelectronics journal Abbreviated Journal (down) Microelectron J
Volume 40 Issue 4/5 Pages 860-862
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We investigate the adsorption process of small molecules on graphene through first-principles calculations and show the presence of two main charge transfer mechanisms. Which mechanism is the dominant one depends on the magnetic properties of the adsorbing molecules. We explain these mechanisms through the density of states of the system and the molecular orbitals of the adsorbates, and demonstrate the possible difficulties in calculating the charge transfer from first principles between a graphene sheet and a molecule. Our results are in good agreement with experiment.
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000265870200058 Publication Date 2008-12-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.163 Times cited 116 Open Access
Notes Approved Most recent IF: 1.163; 2009 IF: 0.778
Call Number UA @ lucian @ c:irua:77030 Serial 65
Permanent link to this record
 
 
Author Li, B.; Partoens, B.; Peeters, F.M.; Magnus, W.
Title Dielectric mismatch effect on coupled impurity states in a freestanding nanowire Type A1 Journal article
Year 2009 Publication Microelectronics journal Abbreviated Journal (down) Microelectron J
Volume 40 Issue 3 Pages 446-448
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We studied the coupled impurity states in a freestanding semiconductor nanowire (NW), within the effective mass approximation and including the effect of the dielectric mismatch, by using finite element method. Bonding and anti-bonding states are found and their energies converge with increasing distance di between the two impurities. The dependence of the binding energy on the wire radius R and the distance di between the two impurities is investigated, and we compare it with the result of a freestanding NW that contains a single impurity.
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000264694700017 Publication Date 2008-07-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.163 Times cited 4 Open Access
Notes Approved Most recent IF: 1.163; 2009 IF: 0.778
Call Number UA @ lucian @ c:irua:76410 Serial 690
Permanent link to this record
 
 
Author Slachmuylders, A.F.; Partoens, B.; Magnus, W.; Peeters, F.M.
Title Neutral shallow donors near a metallic interface Type A1 Journal article
Year 2009 Publication Microelectronics journal Abbreviated Journal (down) Microelectron J
Volume 40 Issue 4/5 Pages 753-755
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The effect of a metallic gate on the bound states of a shallow donor located near the gate is studied. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anti-crossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity.
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000265870200024 Publication Date 2009-02-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.163 Times cited 1 Open Access
Notes Approved Most recent IF: 1.163; 2009 IF: 0.778
Call Number UA @ lucian @ c:irua:77029 Serial 2296
Permanent link to this record
 
 
Author Milton Pereira, J.; Vasilopoulos, P.; Peeters, F.M.
Title Resonant tunneling in graphene microstructures Type A1 Journal article
Year 2008 Publication Microelectronics journal Abbreviated Journal (down) Microelectron J
Volume 39 Issue 3-4 Pages 534-536
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000255600600055 Publication Date 2007-08-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.163 Times cited 9 Open Access
Notes Approved Most recent IF: 1.163; 2008 IF: 0.859
Call Number UA @ lucian @ c:irua:68850 Serial 2892
Permanent link to this record
 
 
Author Mlinar, V.; Peeters, F.M.
Title Theoretical study of InAs/GaAs quantum dots grown on [11k] substrates in the presence of a magnetic field Type A1 Journal article
Year 2006 Publication Microelectronics journal Abbreviated Journal (down) Microelectron J
Volume 37 Issue 12 Pages 1427-1429
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000242907400002 Publication Date 2006-07-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.163 Times cited Open Access
Notes Approved Most recent IF: 1.163; 2006 IF: 0.651
Call Number UA @ lucian @ c:irua:62325 Serial 3612
Permanent link to this record
 
 
Author Mlinar, V.; Peeters, F.M.
Title Tuning of the optical properties of (11k) grown InAs quantum dots by the capping layer Type A1 Journal article
Year 2008 Publication Microelectronics journal Abbreviated Journal (down) Microelectron J
Volume 39 Issue 3-4 Pages 359-361
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000255600600013 Publication Date 2007-09-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.163 Times cited Open Access
Notes Approved Most recent IF: 1.163; 2008 IF: 0.859
Call Number UA @ lucian @ c:irua:68849 Serial 3753
Permanent link to this record
 
 
Author Janssens, K.L.; Partoens, B.; Peeters, F.M.
Title Type II quantum dots in magnetic fields: excitonic behaviour Type A1 Journal article
Year 2003 Publication Microelectronics journal Abbreviated Journal (down) Microelectron J
Volume 34 Issue Pages 347-350
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000183607400007 Publication Date 2003-04-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.163 Times cited 1 Open Access
Notes Approved Most recent IF: 1.163; 2003 IF: 0.565
Call Number UA @ lucian @ c:irua:62450 Serial 3790
Permanent link to this record
 
 
Author De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J.
Title Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers Type A1 Journal article
Year 1999 Publication Microelectronic engineering Abbreviated Journal (down) Microelectron Eng
Volume 45 Issue 2-3 Pages 277-282
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000081748600023 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.806 Times cited Open Access
Notes Fwo-G.0051.97; Fwo-G.00117.86 Approved Most recent IF: 1.806; 1999 IF: 0.815
Call Number UA @ lucian @ c:irua:95791 Serial 47
Permanent link to this record
 
 
Author Lujan, G.S.; Magnus, W.; Sorée, B.; Ragnarsson, L.A.; Trojman, L.; Kubicek, S.; De Gendt, S.; Heyns, A.; De Meyer, K.
Title Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility Type A1 Journal article
Year 2005 Publication Microelectronic engineering Abbreviated Journal (down) Microelectron Eng
Volume 80 Issue Pages 82-85
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000231517000021 Publication Date 2005-06-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 1 Open Access
Notes Approved Most recent IF: 1.806; 2005 IF: 1.347
Call Number UA @ lucian @ c:irua:102729 Serial 222
Permanent link to this record
 
 
Author Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K.
Title First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts Type A1 Journal article
Year 2005 Publication Microelectronic engineering Abbreviated Journal (down) Microelectron Eng
Volume 80 Issue Pages 272-279
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000231517000062 Publication Date 2005-06-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 31 Open Access
Notes Approved Most recent IF: 1.806; 2005 IF: 1.347
Call Number UA @ lucian @ c:irua:95095 Serial 1199
Permanent link to this record
 
 
Author Peeters, F.M.; Schweigert, V.A.; Deo, P.S.
Title Mesoscopic superconducting disks: fluxoids in a box Type A1 Journal article
Year 1999 Publication Microelectronic engineering Abbreviated Journal (down) Microelectron Eng
Volume 47 Issue Pages 393-395
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000081403600093 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 1 Open Access
Notes Approved Most recent IF: 1.806; 1999 IF: 0.815
Call Number UA @ lucian @ c:irua:27028 Serial 2002
Permanent link to this record
 
 
Author De Schutter, B.; Devulder, W.; Schrauwen, A.; van Stiphout, K.; Perkisas, T.; Bals, S.; Vantomme, A.; Detavernier, C.
Title Phase formation in intermixed NiGe thin films : influence of Ge content and low-temperature nucleation of hexagonal nickel germanides Type A1 Journal article
Year 2014 Publication Microelectronic engineering Abbreviated Journal (down) Microelectron Eng
Volume 120 Issue Pages 168-173
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract In this study, we focus on phase formation in intermixed NiGe thin films as they represent a simplified model of the small intermixed interface layer that is believed to form upon deposition of Ni on Ge and where initial phase formation happens. A combinatorial sputter deposition technique was used to co-deposit a range of intermixed NiGe thin films with Ge concentrations varying between 0 and 50 at.%Ge in a single deposition on both Ge (100) and inert SiO2 substrates. In situ X-ray diffraction and transmission electron microscopy where used to study phase formation. In almost the entire composition range under investigation, crystalline phases where found to be present in the as-deposited films. Between 36 and 48 at.%Ge, high-temperature hexagonal nickel germanides were found to occur metastabily below 300 °C, both on SiO2 and Ge (100) substrates. For Ge concentrations in the range between 36 and 42 at.%, this hexagonal germanide phase was even found to be present at room temperature in the as-deposited films. The results obtained in this work could provide more insight in the phase sequence of a pure Ni film on Ge.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000336697300028 Publication Date 2013-09-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 9 Open Access Not_Open_Access
Notes FWO project Nr. G076112N Approved Most recent IF: 1.806; 2014 IF: 1.197
Call Number UA @ lucian @ c:irua:116958 Serial 2584
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Author Peeters, F.M.; Reijniers, J.; Badalian, S.M.; Vasilopoulos, P.
Title Snake orbits in hybrid semiconductor/ferromagnetic devices Type A1 Journal article
Year 1999 Publication Microelectronic engineering Abbreviated Journal (down) Microelectron Eng
Volume 47 Issue Pages 405-407
Keywords A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000081403600096 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 6 Open Access
Notes Approved Most recent IF: 1.806; 1999 IF: 0.815
Call Number UA @ lucian @ c:irua:27030 Serial 3046
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Author Clima, S.; Govoreanu, B.; Jurczak, M.; Pourtois, G.
Title HfOx as RRAM material : first principles insights on the working principles Type A1 Journal article
Year 2014 Publication Microelectronic engineering Abbreviated Journal (down) Microelectron Eng
Volume 120 Issue Pages 13-18
Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract First-principles simulations were employed to gain atomistic insights on the working principles of amorphous HfO2 based Resistive Random Access Memory stack: the nature of the defect responsible for the switching between the High and Low Resistive States has been unambiguously identified to be the substoichiometric Hf sites (commonly called oxygen vacancy-V-O) and the kinetics of the process have been investigated through the study of O diffusion. Also the role of each material layer in the TiN/HfO2/Hf/TiN RRAM stack and the impact of the deposition techniques have been examined: metallic Hf sputtering is needed to provide an oxygen exchange layer that plays the role of defect buffer. TiN shall be a good defect barrier for O but a bad defect buffer layer. A possible scenario to explain the device degradation (switching failure) mechanism has been proposed – the relaxation of the metastable amorphous phase towards crystalline structure leads to denser, more structured cluster that can increase the defect migration barriers. (C) 2013 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000336697300004 Publication Date 2013-08-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 22 Open Access
Notes Approved Most recent IF: 1.806; 2014 IF: 1.197
Call Number UA @ lucian @ c:irua:117767 Serial 3535
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Author Pathangi, H.; Cherman, V.; Khaled, A.; Sorée, B.; Groeseneken, G.; Witvrouw, A.
Title Towards CMOS-compatible single-walled carbon nanotube resonators Type A1 Journal article
Year 2013 Publication Microelectronic engineering Abbreviated Journal (down) Microelectron Eng
Volume 107 Issue Pages 219-222
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract We report a totally CMOS-compatible fabrication technique to assemble horizontally suspended single-walled carbon nanotube (SWCNT) resonators. Individual SWCNTs are assembled in parallel at multiple sites by a technique called dielectrophoresis. The mechanical resonance frequencies of the suspended SWCNTs are in the range of 2035 MHz as determined from the piezoresistive response of the resonators during electrostatic actuation. The resistance of the suspended SWCNT either remains unchanged or increases or decreases significantly as a function of the actuation frequency. This can be explained by the effect the nanotube chirality has on the piezoresistive gauge factor.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000319855800040 Publication Date 2012-07-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 6 Open Access
Notes ; ; Approved Most recent IF: 1.806; 2013 IF: 1.338
Call Number UA @ lucian @ c:irua:109260 Serial 3685
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Author Moors, K.; Sorée, B.; Magnus, W.
Title Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering Type A1 Journal article
Year 2017 Publication Microelectronic engineering Abbreviated Journal (down) Microelectron Eng
Volume 167 Issue 167 Pages 37-41
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering. While taking into account the detailed statistical properties of grains, roughness and barrier material as well as the metallic band structure and quantum mechanical aspects of scattering and confinement, the model does not rely on phenomenological fitting parameters. (C) 2016 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000390746000008 Publication Date 2016-10-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 6 Open Access
Notes ; ; Approved Most recent IF: 1.806
Call Number UA @ lucian @ c:irua:140354 Serial 4460
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Author Clima, S.; Garbin, D.; Devulder, W.; Keukelier, J.; Opsomer, K.; Goux, L.; Kar, G.S.; Pourtois, G.
Title Material relaxation in chalcogenide OTS SELECTOR materials Type A1 Journal article
Year 2019 Publication Microelectronic engineering Abbreviated Journal (down) Microelectron Eng
Volume 215 Issue 215 Pages 110996
Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Nature of the mobility-gap states in amorphous Ge-rich Ge50Se50 was found to be related to homopolar Ge bonds in the chains/clusters of Ge atoms. Threshold switching material suffers Ge-Ge bond concentration drift during material ageing, which can explain the observed reliability of the aGe(50)Se(50) selector devices. Strong Ge-N bonds were introduced to alleviate the observed instability.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000480665600008 Publication Date 2019-05-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 1 Open Access
Notes Approved Most recent IF: 1.806
Call Number UA @ admin @ c:irua:161905 Serial 6308
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Author Adriaens, A.; Van 't dack, L.; Adams, F.; Gijbels, R.
Title A mass spectrometric study of the dissolution behavior of sanidine Type A1 Journal article
Year 1995 Publication Microchimica acta Abbreviated Journal (down) Microchim Acta
Volume 120 Issue Pages 139-147
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Wien Editor
Language Wos A1995TH37000013 Publication Date 2005-02-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-3672;1436-5073; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.741 Times cited 1 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10904 Serial 1953
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Author Verbeeck, J.; Bertoni, G.
Title Model-based quantification of EELS: is standardless quantification possible? Type A1 Journal article
Year 2008 Publication Microchimica acta Abbreviated Journal (down) Microchim Acta
Volume 161 Issue 3/4 Pages 439-443
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Electron energy loss spectroscopy (EELS) is an ideal tool to obtain chemical information from nanoscale volumes. Quantification of the experimental spectra however has prevented for a long time access to the available information in a reliable and reproducible way. We present recent advances in model-based quantification of EELS spectra and show that we obtain the best possible precision for a given dataset, as well as remarkably good accuracies when applied to three different materials. The results are shown to be far superior over conventional quantification techniques and could hold a promise for standardless quantification of EELS spectra.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000256175600024 Publication Date 2008-02-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-3672;1436-5073; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.58 Times cited 5 Open Access
Notes Esteem 026019; Fwo; G.0425.05; Iap V; Goa 2005 Approved Most recent IF: 4.58; 2008 IF: 1.910
Call Number UA @ lucian @ c:irua:69292UA @ admin @ c:irua:69292 Serial 2100
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Author Van 't dack, L.; Gijbels, R.; Walker, C.T.
Title Modern developments and applications in microbeam analysis: proceedings of the 10th Workshop of the European Microbeam Analysis Society (EMAS), Antwerp, Belgium, May 6-10, 2007 Type Editorial
Year 2008 Publication Microchimica acta Abbreviated Journal (down) Microchim Acta
Volume 161 Issue 3/4 Pages 285-286
Keywords Editorial; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000256175600001 Publication Date 2008-05-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-3672;1436-5073; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.58 Times cited 1 Open Access
Notes Approved Most recent IF: 4.58; 2008 IF: 1.910
Call Number UA @ lucian @ c:irua:69291 Serial 2157
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