Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Bogaerts, A.; De Bie, C.; Eckert, M.; Georgieva, V.; Martens, T.; Neyts, E.; Tinck, S. |
Modeling of the plasma chemistry and plasmasurface interactions in reactive plasmas |
2010 |
Pure and applied chemistry |
82 |
13 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Bogaerts, A. |
Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition |
2011 |
Plasma sources science and technology |
20 |
11 |
UA library record; WoS full record; WoS citing articles |
Van Laer, K.; Tinck, S.; Samara, V.; de Marneffe, J.F.; Bogaerts, A. |
Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma : modeling and experimental investigation |
2013 |
Plasma sources science and technology |
22 |
13 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Boullart, W.; Bogaerts, A. |
Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching : effects of SiO2 chamber wall coating |
2011 |
Plasma sources science and technology |
20 |
22 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Altamirano-Sánchez, E.; De Schepper, P.; Bogaerts, A. |
Formation of a nanoscale SiO2 capping layer on photoresist lines with an Ar/SiCl4/O2 inductively coupled plasma : a modeling investigation |
2014 |
Plasma processes and polymers |
11 |
1 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Bogaerts, A. |
Modeling SiH4/O2/Ar inductively coupled plasmas used for filling of microtrenches in shallow trench isolation (STI) |
2012 |
Plasma processes and polymers |
9 |
5 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; De Schepper, P.; Bogaerts, A. |
Numerical investigation of SiO2 coating deposition in wafer processing reactors with SiCl4/O2/Ar inductively coupled plasmas |
2013 |
Plasma processes and polymers |
10 |
3 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Bogaerts, A.; Shamiryan, D. |
Simultaneous etching and deposition processes during the etching of silicon with a Cl2/O2/Ar inductively coupled plasma |
2011 |
Plasma processes and polymers |
8 |
5 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Tillocher, T.; Georgieva, V.; Dussart, R.; Neyts, E.; Bogaerts, A. |
Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF6/O2plasmas |
2017 |
Plasma processes and polymers |
14 |
|
UA library record; WoS full record; WoS citing articles |
Gorbanev, Y.; Verlackt, C.C.W.; Tinck, S.; Tuenter, E.; Foubert, K.; Cos, P.; Bogaerts, A. |
Combining experimental and modelling approaches to study the sources of reactive species induced in water by the COST RF plasma jet |
2018 |
Physical chemistry, chemical physics |
20 |
23 |
UA library record; WoS full record; WoS citing articles |
Ishikawa, K.; Karahashi, K.; Ichiki, T.; Chang, J.P.; George, S.M.; Kessels, W.M.M.; Lee, H.J.; Tinck, S.; Um, J.H.; Kinoshita, K. |
Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? |
2017 |
Japanese journal of applied physics |
56 |
18 |
UA library record; WoS full record; WoS citing articles |
Zhang, Y.-R.; Tinck, S.; De Schepper, P.; Wang, Y.-N.; Bogaerts, A. |
Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime |
2015 |
Journal of vacuum science and technology: A: vacuum surfaces and films |
33 |
3 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Tillocher, T.; Dussart, R.; Bogaerts, A. |
Cryogenic etching of silicon with SF6 inductively coupled plasmas: a combined modelling and experimental study |
2015 |
Journal of physics: D: applied physics |
48 |
9 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Boullart, W.; Bogaerts, A. |
Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasmasurface simulations and experiments |
2009 |
Journal of physics: D: applied physics |
42 |
23 |
UA library record; WoS full record; WoS citing articles |
Gul, B.; Tinck, S.; De Schepper, P.; Aman-ur-Rehman; Bogaerts, A. |
Numerical investigation of HBr/He transformer coupled plasmas used for silicon etching |
2015 |
Journal of physics: D: applied physics |
48 |
7 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Boullart, W.; Bogaerts, A. |
Simulation of an Ar/Cl2 inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments |
2008 |
Journal of physics: D: applied physics |
41 |
31 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Bogaerts, A. |
Computational study of the CF4 /CHF3 / H2 /Cl2 /O2 /HBr gas phase plasma chemistry |
2016 |
Journal of physics: D: applied physics |
49 |
5 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Bogaerts, A. |
Role of vibrationally excited HBr in a HBr/He inductively coupled plasma used for etching of silicon |
2016 |
Journal of physics: D: applied physics |
49 |
|
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Tillocher, T.; Dussart, R.; Neyts, E.C.; Bogaerts, A. |
Elucidating the effects of gas flow rate on an SF6inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation |
2016 |
Journal of physics: D: applied physics |
49 |
1 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Neyts, E.C.; Bogaerts, A. |
Fluorinesilicon surface reactions during cryogenic and near room temperature etching |
2014 |
The journal of physical chemistry: C : nanomaterials and interfaces |
118 |
11 |
UA library record; WoS full record; WoS citing articles |
Gou, F.; Neyts, E.; Eckert, M.; Tinck, S.; Bogaerts, A. |
Molecular dynamics simulations of Cl+ etching on a Si(100) surface |
2010 |
Journal of applied physics |
107 |
15 |
UA library record; WoS full record; WoS citing articles |
Zhang, Q.-Z.; Tinck, S.; de Marneffe, J.-F.; Zhang, L.; Bogaerts, A. |
Mechanisms for plasma cryogenic etching of porous materials |
2017 |
Applied physics letters |
111 |
2 |
UA library record; WoS full record; WoS citing articles |
Tinck, S. |
Numerical simulations of inductively coupled plasmas for applications in the microelectronics industry |
2011 |
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UA library record |