Records |
Author |
Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K. |
Title |
Defects in high-dose oxygen implanted silicon : a TEM study |
Type |
A1 Journal article |
Year |
1991 |
Publication |
Vacuum: the international journal and abstracting service for vacuum science and technology
T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND |
Abbreviated Journal |
Vacuum |
Volume |
42 |
Issue |
5-6 |
Pages |
367-369 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer. |
Address |
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Corporate Author |
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Thesis |
|
Publisher |
|
Place of Publication |
Oxford |
Editor |
|
Language |
|
Wos |
A1991EV61700007 |
Publication Date |
2002-10-19 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0042-207X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.858 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 # |
Call Number |
UA @ lucian @ c:irua:104022 |
Serial |
629 |
Permanent link to this record |
|
|
|
Author |
Chen, J.H.; van Dyck, D.; op de Beeck, M.; van Landuyt, J. |
Title |
Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging |
Type |
A1 Journal article |
Year |
1997 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
Volume |
69 |
Issue |
|
Pages |
219-240 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1997YG59500001 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0304-3991 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.843 |
Times cited |
11 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.843; 1997 IF: 1.600 |
Call Number |
UA @ lucian @ c:irua:21416 |
Serial |
455 |
Permanent link to this record |
|
|
|
Author |
De Meulenaere, P.; van Dyck, D.; Van Tendeloo, G.; van Landuyt, J. |
Title |
Dynamical electron diffraction in substitutionally disordered column structures |
Type |
A1 Journal article |
Year |
1995 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
Volume |
60 |
Issue |
1 |
Pages |
171-185 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
Abstract |
For column structures, such as fee-based alloys viewed along the cube direction, the concept of electron channelling through the atom columns is more and more used to interpret the corresponding HREM images. In the case of(partially) disordered columns, the projected potential approach which is used in the channelling description must be questioned since the arrangement of the atoms along the beam direction might affect the exit wave of the electrons. In this paper, we critically inspect this top-bottom effect using multi-slice calculations. A modified channelling theory is introduced which turns out to be very appropriate for the interpretation of these results. For substitutionally disordered column structures, it is also discussed how to link the chemical composition of the material to statistical data of the HREM image. This results in a convenient tool to discern images taken at different thicknesses and focus values. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1995TG59500017 |
Publication Date |
2002-07-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.436 |
Times cited |
14 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:13013 |
Serial |
770 |
Permanent link to this record |
|
|
|
Author |
Luyten, W.; Krekels, T.; Amelinckx, S.; Van Tendeloo, G.; van Dyck, D.; van Landuyt, J. |
Title |
Electron diffraction effects of conical, helically wound, graphite whiskers |
Type |
A1 Journal article |
Year |
1993 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
Volume |
49 |
Issue |
|
Pages |
123-131 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1993KV56700014 |
Publication Date |
2002-10-18 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.436 |
Times cited |
14 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:6784 |
Serial |
917 |
Permanent link to this record |
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|
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. |
Title |
In situ HREM study of electron irradiation effects in AgCl microcrystals |
Type |
A1 Journal article |
Year |
1992 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
Volume |
40 |
Issue |
|
Pages |
151-162 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1992HN13400005 |
Publication Date |
2002-10-18 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.436 |
Times cited |
10 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:4094 |
Serial |
1581 |
Permanent link to this record |
|
|
|
Author |
Fanidis, C.; van Dyck, D.; van Landuyt, J. |
Title |
Inelastic scattering of high-energy electrons in a crystal in thermal equilibrium with the environment: 1: theoretical framework |
Type |
A1 Journal article |
Year |
1992 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
Volume |
41 |
Issue |
|
Pages |
55-64 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1992HX68100005 |
Publication Date |
2002-10-18 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.436 |
Times cited |
17 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:4092 |
Serial |
1608 |
Permanent link to this record |
|
|
|
Author |
Fanidis, C.; van Dyck, D.; van Landuyt, J. |
Title |
Inelastic scattering of high-energy electrons in a crystal in thermal equilibrium with the environment: part 2: solution of the equations and applications to concrete cases |
Type |
A1 Journal article |
Year |
1993 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
Volume |
48 |
Issue |
|
Pages |
133-164 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1993KM78800013 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0304-3991 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.436 |
Times cited |
6 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:6782 |
Serial |
1609 |
Permanent link to this record |
|
|
|
Author |
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D. |
Title |
On the interpretation of HREM images of partially ordered alloys |
Type |
A1 Journal article |
Year |
1995 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
Volume |
60 |
Issue |
2 |
Pages |
265-282 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
Abstract |
The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1995TZ14700008 |
Publication Date |
2002-07-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.436 |
Times cited |
20 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:13014 |
Serial |
2438 |
Permanent link to this record |
|
|
|
Author |
Zhang, X.B.; Zhang, X.F.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
Title |
The reciprocal space of carbon tubes: a detailed interpretation of the electron diffraction effects |
Type |
A1 Journal article |
Year |
1994 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
Volume |
54 |
Issue |
|
Pages |
237-249 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1994PA59800016 |
Publication Date |
2002-10-18 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.436 |
Times cited |
59 |
Open Access |
|
Notes |
|
Approved |
|
Call Number |
UA @ lucian @ c:irua:10006 |
Serial |
2844 |
Permanent link to this record |
|
|
|
Author |
Zhang, X.F.; Zhang, X.B.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J.; Werner, H. |
Title |
A simple preparation method for air-sensitive specimens for transmission electron microscopy demonstrated by Rb6C60 |
Type |
A1 Journal article |
Year |
1994 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
Volume |
55 |
Issue |
|
Pages |
25-30 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
In this paper a particularly simple but efficient method is presented by which samples of alkali-doped C-60 materials or other air-sensitive materials can be prepared and transferred into a transmission electron microscope for direct observations and investigations. Flexible, transparent glove bags are used which are filled to a slight overpressure with dry nitrogen. Under this protective atmosphere, the air-sensitive sample is mounted in the specimen holder and inserted in the vacuum of the electron microscope. Rb6C60 which is prepared and transferred into the microscope in this way has been investigated by transmission electron microscopy (TEM). The results confirm the bcc structure and especially the location of the rubidium atoms. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1994PE30800005 |
Publication Date |
2002-10-18 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.436 |
Times cited |
2 |
Open Access |
|
Notes |
|
Approved |
CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 # |
Call Number |
UA @ lucian @ c:irua:10007 |
Serial |
3002 |
Permanent link to this record |
|
|
|
Author |
van Landuyt, J. |
Title |
The evolution of HVEM application in antwerp |
Type |
A1 Journal article |
Year |
1991 |
Publication |
Ultramicroscopy
T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan |
Abbreviated Journal |
Ultramicroscopy |
Volume |
39 |
Issue |
1-4 |
Pages |
287-298 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1991GY23100034 |
Publication Date |
2002-10-18 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
Impact Factor |
2.436 |
Times cited |
|
Open Access |
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
Call Number |
UA @ lucian @ c:irua:95973 |
Serial |
3579 |
Permanent link to this record |
|
|
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; de Keyzer, R. |
Title |
Long period surface ordering of iodine ions in mixed tabular AgBr-AgBrI microcrystals |
Type |
A1 Journal article |
Year |
1995 |
Publication |
Surface science : a journal devoted to the physics and chemistry of interfaces |
Abbreviated Journal |
Surf Sci |
Volume |
337 |
Issue |
|
Pages |
153-165 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1995RQ74900024 |
Publication Date |
2003-05-13 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0039-6028; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.925 |
Times cited |
10 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:13162 |
Serial |
1836 |
Permanent link to this record |
|
|
|
Author |
Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
Title |
The study of high Tc-superconducting materials by electron microscopy and electron diffraction |
Type |
A1 Journal article |
Year |
1991 |
Publication |
Superconductor science and technology
T2 – SATELLITE CONF TO THE 19TH INTERNATIONAL CONF ON LOW TEMPERATURE PHYSICS : HIGH TEMPERATURE SUPERCONDUCTIVITY, AUG 13-15, 1990, QUEENS COLL, CAMBRIDGE, ENGLAND |
Abbreviated Journal |
Supercond Sci Tech |
Volume |
4 |
Issue |
s:[1] |
Pages |
S19-S34 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
A survey is given of the application of different electron microscopic techniques to the study of structural features of high T(c)-superconducting materials. Emphasis is laid in this contribution on those structural aspects for the study of which electron microscopy has been essential or has contributed to a significant extent. |
Address |
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Corporate Author |
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Thesis |
|
Publisher |
|
Place of Publication |
Bristol |
Editor |
|
Language |
|
Wos |
A1991FA42000004 |
Publication Date |
2002-08-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0953-2048;1361-6668; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.325 |
Times cited |
2 |
Open Access |
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
Call Number |
UA @ lucian @ c:irua:104503 |
Serial |
3596 |
Permanent link to this record |
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|
|
Author |
Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J. |
Title |
Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application |
Type |
P1 Proceeding |
Year |
2000 |
Publication |
Sensors and actuators : B : chemical |
Abbreviated Journal |
Sensor Actuat B-Chem |
Volume |
68 |
Issue |
1-3 |
Pages |
140-145 |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT); Vision lab |
Abstract |
Pure and Nb-doped TiO2 thick-films were prepared by screen-printing, starting from nanosized powders. Grain growth and crystalline phase modification occurred as consequence of firing at high temperature. It has been shown that niobium addition inhibits grain coarsening and hinders anatase-to-rutile phase transition. These semiconducting films exhibited n-type behavior, while Nb acted as donor-dopant. Gas measurements demonstrated that the films are suitable for CO or NO2 sensing. Microstructural characterization by electron microscopy and differential thermal analysis (DTA) highlights the dependence of gas-sensing behavior on film's properties. (C) 2000 Elsevier Science S.A. All rights reserved. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Lausanne |
Editor |
|
Language |
|
Wos |
000089218000022 |
Publication Date |
2002-07-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0925-4005; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
5.401 |
Times cited |
51 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 5.401; 2000 IF: 1.470 |
Call Number |
UA @ lucian @ c:irua:95167 |
Serial |
3223 |
Permanent link to this record |
|
|
|
Author |
Volkov, V.V.; van Landuyt, J.; Marushkin, K.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
Title |
LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas |
Type |
A1 Journal article |
Year |
1997 |
Publication |
Sensors and actuators : A : physical |
Abbreviated Journal |
Sensor Actuat A-Phys |
Volume |
62 |
Issue |
1/3 |
Pages |
624-632 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
Highly effective IR light-emitting diodes operating at the wavelength 1.66 mu m and based on the buried heterostructure In0.88Ga0.12As0.26P0.74/ In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM),electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CK, gas sensor has been developed and fabricated an the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH4 gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested, It is shown that the proposed type of sensor can be used for the quantitative remote control of CH4 gas concentration (0.2-100%) via a fibre glass line up to a distance of 2 x 1 km. (C) 1997 Elsevier Science S.A. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Lausanne |
Editor |
|
Language |
|
Wos |
A1997YD90600029 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0924-4247; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.499 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.499; 1997 IF: 0.635 |
Call Number |
UA @ lucian @ c:irua:20455 |
Serial |
1855 |
Permanent link to this record |
|
|
|
Author |
Amelinckx, S.; Bernaerts, D.; Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J. |
Title |
A structure model and growth mechanism for multishell carbon nanotubes |
Type |
A1 Journal article |
Year |
1995 |
Publication |
Science |
Abbreviated Journal |
Science |
Volume |
267 |
Issue |
|
Pages |
1334-1338 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Washington, D.C. |
Editor |
|
Language |
|
Wos |
A1995QK06800041 |
Publication Date |
2006-10-27 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0036-8075;1095-9203; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
33.611 |
Times cited |
169 |
Open Access |
|
Notes |
|
Approved |
PHYSICS, APPLIED 28/145 Q1 # |
Call Number |
UA @ lucian @ c:irua:13309 |
Serial |
3305 |
Permanent link to this record |
|
|
|
Author |
de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Title |
Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon |
Type |
A1 Journal article |
Year |
1999 |
Publication |
The review of scientific instruments |
Abbreviated Journal |
Rev Sci Instrum |
Volume |
70 |
Issue |
9 |
Pages |
3661-3663 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6]. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000082289200026 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0034-6748; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.515 |
Times cited |
5 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.515; 1999 IF: 1.293 |
Call Number |
UA @ lucian @ c:irua:103487 |
Serial |
48 |
Permanent link to this record |
|
|
|
Author |
Krekels, T.; Milat, O.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Slater, P.R.; Greaves, C. |
Title |
SO4-chain formation and ordering in [YSrCa]Sr2Cu2.78(SO4)0.22O7-\delta |
Type |
A1 Journal article |
Year |
1993 |
Publication |
Physica: C : superconductivity |
Abbreviated Journal |
Physica C |
Volume |
210 |
Issue |
3-4 |
Pages |
439-446 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
YBCO-based materials containing SO4-tetrahedra centered on the Cu(1)-sites of the CuO-chain plane have been examined by means of electron diffraction and high resolution electron microscopy. An incommensurate modulation is observed and attributed to the ordering of b-oriented SO4-rich chains in the Cu(1)-S-O-layer, described in terms of an SO4-concentration wave. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1993LG46100018 |
Publication Date |
2002-10-17 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0921-4534; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
0.942 |
Times cited |
18 |
Open Access |
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
Call Number |
UA @ lucian @ c:irua:102977 |
Serial |
3557 |
Permanent link to this record |
|
|
|
Author |
de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Title |
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon |
Type |
A1 Journal article |
Year |
2003 |
Publication |
Physica: B : condensed matter
T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK |
Abbreviated Journal |
Physica B |
Volume |
340 |
Issue |
|
Pages |
1013-1017 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
000188300200213 |
Publication Date |
2003-11-24 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0921-4526; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.386 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.386; 2003 IF: 0.908 |
Call Number |
UA @ lucian @ c:irua:103784 |
Serial |
25 |
Permanent link to this record |
|
|
|
Author |
de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. |
Title |
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM |
Type |
A1 Journal article |
Year |
2001 |
Publication |
Physica: B : condensed matter
T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY |
Abbreviated Journal |
Physica B |
Volume |
308 |
Issue |
|
Pages |
294-297 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
000173660100073 |
Publication Date |
2002-10-15 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0921-4526; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.386 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.386; 2001 IF: 0.663 |
Call Number |
UA @ lucian @ c:irua:103389 |
Serial |
345 |
Permanent link to this record |
|
|
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Title |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM |
Type |
A1 Journal article |
Year |
1999 |
Publication |
Physica status solidi: A: applied research
T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland |
Abbreviated Journal |
Phys Status Solidi A |
Volume |
171 |
Issue |
1 |
Pages |
147-157 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Wiley |
Place of Publication |
Berlin |
Editor |
|
Language |
|
Wos |
000078539700020 |
Publication Date |
2002-09-10 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0031-8965;1521-396X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
40 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:95798 |
Serial |
1152 |
Permanent link to this record |
|
|
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Title |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM |
Type |
A1 Journal article |
Year |
1999 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
Phys Status Solidi A |
Volume |
171 |
Issue |
1 |
Pages |
147-157 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
Language |
|
Wos |
000078539700020 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0031-8965 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
40 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29687 |
Serial |
1153 |
Permanent link to this record |
|
|
|
Author |
Nistor, L.; van Landuyt, J.; Ralchenko, V. |
Title |
Structural aspects of CVD idamond wafers grown at different hydrogen flow rates |
Type |
A1 Journal article |
Year |
1999 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
Phys Status Solidi A |
Volume |
171 |
Issue |
|
Pages |
5-10 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
Language |
|
Wos |
000081733800007 |
Publication Date |
2002-09-10 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0031-8965;1521-396X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
15 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29688 |
Serial |
3207 |
Permanent link to this record |
|
|
|
Author |
Takeda, M.; Suzuki, N.; Shinohara, G.; Endo, T.; van Landuyt, J. |
Title |
TEM study on precipitation behavior in Cu-Co alloys |
Type |
A1 Journal article |
Year |
1998 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
Phys Status Solidi A |
Volume |
168 |
Issue |
|
Pages |
27-35 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
Language |
|
Wos |
000075226500005 |
Publication Date |
2002-09-10 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0031-8965;1521-396X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
18 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29677 |
Serial |
3494 |
Permanent link to this record |
|
|
|
Author |
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. |
Title |
In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures |
Type |
A1 Journal article |
Year |
2000 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
Volume |
61 |
Issue |
15 |
Pages |
10336-10345 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Wos |
000086606200082 |
Publication Date |
2002-07-27 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0163-1829;1095-3795; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.836 |
Times cited |
27 |
Open Access |
|
Notes |
Conference Name: Microsc. Semicond. Mater. Conf. |
Approved |
Most recent IF: 3.836; 2000 IF: NA |
Call Number |
UA @ lucian @ c:irua:103456 |
Serial |
1577 |
Permanent link to this record |
|
|
|
Author |
Ahenach, J.; Cool, P.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
Title |
Influence of water on the pillaring of montmorillonite with aminopropyltriethoxysilane |
Type |
A1 Journal article |
Year |
1999 |
Publication |
Physical chemistry, chemical physics |
Abbreviated Journal |
Phys Chem Chem Phys |
Volume |
1 |
Issue |
|
Pages |
3703-3708 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Cambridge |
Editor |
|
Language |
|
Wos |
000081765300046 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1463-9076;1463-9084; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
4.123 |
Times cited |
10 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 4.123; 1999 IF: NA |
Call Number |
UA @ lucian @ c:irua:28250 |
Serial |
1660 |
Permanent link to this record |
|
|
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Title |
On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope |
Type |
A1 Journal article |
Year |
1998 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
Philos Mag A |
Volume |
77 |
Issue |
2 |
Pages |
423-435 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
London |
Editor |
|
Language |
|
Wos |
000071976400010 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0141-8610; 1364-2804 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
23 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29671 |
Serial |
2440 |
Permanent link to this record |
|
|
|
Author |
Zhang, Z.; Ma, L.N.; Liao, X.Z.; van Landuyt, J. |
Title |
A transmission electron-microscopy study of crystalline surface domains on al-co decagonal quasi-crystals and the \tau2-Al13CO4 approximant |
Type |
A1 Journal article |
Year |
1994 |
Publication |
Philosophical magazine letters |
Abbreviated Journal |
Phil Mag Lett |
Volume |
70 |
Issue |
5 |
Pages |
303-310 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Twin-domains of a b.c.c. crystalline phase with a = 0.29 nm have been found in a surface layer on surfaces of Al-Co decagonal quasicrystals and the coexisting tau(2)-Al13Co4 crystalline approximant. These surface layer domains are introduced during the preparation of electron microscopy thin films by ion milling. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
London |
Editor |
|
Language |
|
Wos |
A1994PQ20900008 |
Publication Date |
2007-07-08 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0950-0839;1362-3036; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.087 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:99816 |
Serial |
3715 |
Permanent link to this record |
|
|
|
Author |
Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O. |
Title |
Defect characterization in high temperature implanted 6H-SiC using TEM |
Type |
A1 Journal article |
Year |
1997 |
Publication |
Nuclear instruments and methods in physics research: B |
Abbreviated Journal |
Nucl Instrum Meth B |
Volume |
127/128 |
Issue |
|
Pages |
347-349 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Wos |
A1997XG60500078 |
Publication Date |
2002-07-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.109 |
Times cited |
17 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.109; 1997 IF: 1.016 |
Call Number |
UA @ lucian @ c:irua:21411 |
Serial |
613 |
Permanent link to this record |
|
|
|
Author |
Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. |
Title |
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ |
Type |
A1 Journal article |
Year |
1996 |
Publication |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France |
Abbreviated Journal |
Nucl Instrum Meth B |
Volume |
120 |
Issue |
1-4 |
Pages |
186-189 |
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
Abstract |
6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1996VZ24500040 |
Publication Date |
2002-07-26 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
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ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.124 |
Times cited |
2 |
Open Access |
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Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:95882 |
Serial |
947 |
Permanent link to this record |