Author |
Title |
Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
Publication |
Volume |
Times cited |
Additional Links |
Nistor, L.C.; van Landuyt, J.; Dincã, G. |
HREM of defects in cubic boron nitride single crystals |
1998 |
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UA library record; WoS full record; |
van Landuyt, J.; Van Tendeloo, G. |
HREM for characterisation of nanoscale microstructures |
1998 |
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UA library record |
van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. |
Defects in AgCl and AgBr(100) tabular crystals studied by TEM |
1998 |
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UA library record |
van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
Defect related growth of tabular AgCl(100) crystals: a TEM study |
1998 |
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UA library record; WoS full record; |
Schryvers, D.; Goessens, C.; van Renterghem, W.; van Landuyt, J.; de Keyzer, R. |
Conventional and HREM study of structural defects in nanostructured silver halides |
1998 |
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UA library record |
van Landuyt, J.; Van Tendeloo, G. |
Charcaterization by high-resolution transmission electron microscopy |
1998 |
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UA library record; WoS full record; |
Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
Electron microscopy of carbon nanotubes and related structures |
1997 |
The journal of physics and chemistry of solids |
58 |
12 |
UA library record; WoS full record; WoS citing articles |
Volkov, V.V.; van Landuyt, J.; Marushkin, K.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas |
1997 |
Sensors and actuators : A : physical |
62 |
3 |
UA library record; WoS full record; WoS citing articles |
Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O. |
Defect characterization in high temperature implanted 6H-SiC using TEM |
1997 |
Nuclear instruments and methods in physics research: B |
127/128 |
17 |
UA library record; WoS full record; WoS citing articles |
Vanhellemont, J.; Bender, H.; van Landuyt, J. |
TEM studies of processed Si device materials |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Korothushenko, K.G.; Smolin, A.A. |
Structural studies of nanocrystalline diamond thin films |
1997 |
Materials science forum |
239-241 |
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UA library record; WoS full record; |
Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. |
New method to determine the parity of the number of twin planes in tabular silver halide microcrystals from top views |
1997 |
The journal of imaging science and technology |
41 |
1 |
UA library record; WoS full record; WoS citing articles |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
New intermediate defect configuration in Si studied by in situ HREM irradiation |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Smolin, A.A. |
Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization |
1997 |
Diamond and related materials |
6 |
116 |
UA library record; WoS full record; WoS citing articles |
Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K. |
Microstructure of Mn-doped, spin-cast FeSi2 |
1997 |
Journal of electron microscopy |
46 |
3 |
UA library record; WoS full record; WoS citing articles |
Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
Microstructure and formation mechanisms of cylindrical and conical scrolls of the misfit layer compounds PbNbnS2n+1 |
1997 |
Journal of crystal growth |
172 |
23 |
UA library record; WoS full record; WoS citing articles |
van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J. |
Microscopy of gemmological materials |
1997 |
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|
4 |
UA library record; WoS full record; WoS citing articles |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation |
1997 |
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UA library record |
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J. |
In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure |
1997 |
Conference series of the Institute of Physics |
157 |
1 |
UA library record; WoS full record; WoS citing articles |
Volkov, V.V.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Busheva, E.E.; Shabunina, G.G.; Aminov, T.G.; Novotortsev, V.M. |
HREM image analysis up to structure determination of SbCrSe3: a new 1D ferromagnet |
1997 |
Journal of solid state chemistry |
132 |
1 |
UA library record; WoS full record; WoS citing articles |
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J. |
High resolution TEM observation of in situ colloid formation in CaF2 crystals |
1997 |
Materials science forum |
239-241 |
3 |
UA library record; WoS full record; WoS citing articles |
Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. |
Handbook of microscopy: applications in materials science, solid-state physics and chemistry |
1997 |
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|
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UA library record |
Frangis, N.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. |
Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction |
1997 |
Journal of crystal growth |
172 |
29 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. |
The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study |
1997 |
Journal of crystal growth |
181 |
9 |
UA library record; WoS full record; WoS citing articles |
Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. |
Electron microscopy: principles and fundamentals |
1997 |
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UA library record |
Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. |
Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals |
1997 |
Journal of crystal growth |
172 |
15 |
UA library record; WoS full record; WoS citing articles |
Chen, J.H.; van Dyck, D.; op de Beeck, M.; van Landuyt, J. |
Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging |
1997 |
Ultramicroscopy |
69 |
11 |
UA library record; WoS full record; WoS citing articles |
Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas |
1997 |
Journal of crystal growth |
173 |
4 |
UA library record; WoS full record; WoS citing articles |
Bernaerts, D.; op de Beeck, M.; Amelinckx, S.; van Landuyt, J.; Van Tendeloo, G. |
The chirality of carbon nanotubules determined by dark-field electron microscopy |
1996 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
74 |
20 |
UA library record; WoS full record; WoS citing articles |
Teodorescu, V.S.; Mihailescu, I.N.; Gyorgy, E.; Luches, A.; Martino, M.; Nistor, L.C.; van Landuyt, J.; Hermann, J. |
The study of a crater forming on the surface of a Ti target submitted to multipulse excimer laser irradiation under low pressure N2 |
1996 |
Journal of modern optics |
43 |
11 |
UA library record; WoS full record; WoS citing articles |