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Author  |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Peelaers, H.; Partoens, B.; Peeters, F.M. |
Phonons in Ge nanowires |
2009 |
Applied physics letters |
95 |
12 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Peelaers, H.; Partoens, B.; Peeters, F.M. |
Properties of B and P doped Ge nanowires |
2007 |
Applied physics letters |
90 |
35 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Peeters, F.M.; Li, X.Q. |
Hall magnetometer in the ballistic regime |
1998 |
Applied physics letters |
72 |
119 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Rauwel, E.; Dubourdieu, C.; Holländer, B.; Rochat, N.; Ducroquet, F.; Rossell, M.D.; Van Tendeloo, G.; Pelissier, B. |
Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition |
2006 |
Applied physics letters |
89 |
78 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Razavi, F.S.; Gross, G.; Habermeier, H.-U.; Lebedev, O.; Amelinckx, S.; Van Tendeloo, G.; Vigliante, A. |
Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films |
2000 |
Applied physics letters |
76 |
91 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Reijniers, J.; Peeters, F.M. |
Hybrid ferromagnetic/semiconductor Hall effect device |
1998 |
Applied physics letters |
73 |
35 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Rouvière, J.-L.; Béché, A.; Martin, Y.; Denneulin, T.; Cooper, D. |
Improved strain precision with high spatial resolution using nanobeam precession electron diffraction |
2013 |
Applied physics letters |
103 |
53 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Salje, E.K.H.; Zhang, H.; Schryvers, D.; Bartova, B. |
Quantitative Landau potentials for the martensitic transformation in Ni-Al |
2007 |
Applied physics letters |
90 |
9 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Saniz, R.; Dixit, H.; Lamoen, D.; Partoens, B. |
Quasiparticle energies and uniaxial pressure effects on the properties of SnO2 |
2010 |
Applied physics letters |
97 |
23 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Sankaran, K.; Pourtois, G.; Degraeve, R.; Zahid, M.B.; Rignanese, G.-M.; Van Houdt, J. |
First-principles modeling of intrinsic and extrinsic defects in \gamma-Al2O3 |
2010 |
Applied physics letters |
97 |
12 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Santiso, J.; Pardo, J.A.; Solis, C.; Garcia, G.; Figueras, A.; Rossell, M.D.; Van Tendeloo, G. |
Strain relaxation and oxygen superstructure modulation in epitaxial Sr4Fe6O13\pm\delta films |
2005 |
Applied physics letters |
86 |
5 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling |
2011 |
Applied physics letters |
99 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Structural and vibrational properties of amorphous GeO2 from first-principles |
2011 |
Applied physics letters |
98 |
226 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Schowalter, M.; Lamoen, D.; Kruse, P.; Gerthsen, D.; Rosenauer, A. |
First-principles calculations of the mean inner Coulomb potential for sphalerite type II.VI semiconductors |
2004 |
Applied Physics Letters |
85 |
16 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kruse, P.; Gerthsen, D. |
Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold |
2006 |
Applied Physics Letters |
88 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Schowalter, M.; Titantah, J.T.; Lamoen, D.; Kruse, P. |
Ab initio computation of the mean inner Coulomb potential of amorphous carbon structures |
2005 |
Applied physics letters |
86 |
15 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Shakouri, K.; Vasilopoulos, P.; Vargiamidis, V.; Hai, G.-Q.; Peeters, F.M. |
Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene |
2014 |
Applied physics letters |
104 |
16 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Silhanek, A.V.; van de Vondel, J.; Moshchalkov, V.V.; Metlushko, V.; Ilic, B.; Misko, V.R.; Peeters, F.M. |
Comment on “Transverse rectification in superconducting thin films with arrays of asymmetric defects” |
2008 |
Applied physics letters |
92 |
20 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Slachmuylders, A.F.; Partoens, B.; Peeters, F.M.; Magnus, W. |
Effect of a metallic gate on the energy levels of a shallow donor |
2008 |
Applied physics letters |
92 |
14 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Sorée, B.; Magnus, W.; Vandenberghe, W. |
Low-field mobility in ultrathin silicon nanowire junctionless transistors |
2011 |
Applied physics letters |
99 |
20 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Torun, E.; Sahin, H.; Singh, S.K.; Peeters, F.M. |
Stable half-metallic monolayers of FeCl2 |
2015 |
Applied physics letters |
106 |
84 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Turner, S.; Egoavil, R.; Batuk, M.; Abakumov, A.A.; Hadermann, J.; Verbeeck, J.; Van Tendeloo, G. |
Site-specific mapping of transition metal oxygen coordination in complex oxides |
2012 |
Applied physics letters |
101 |
12 |
UA library record; WoS full record; WoS citing articles |
|
|
|
van Daele, B.; Van Tendeloo, G.; Jacobs, K.; Moerman, I.; Leys, M. |
Formation of metallic In in InGaN/GaN multiquantum wells |
2004 |
Applied physics letters |
85 |
32 |
UA library record; WoS full record; WoS citing articles |
|
|
|
van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.; Germain, M. |
The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN |
2005 |
Applied physics letters |
87 |
57 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Van Duppen, B.; Peeters, F.M. |
Comment on “Chiral tunneling in trilayer graphene” [Appl. Phys. Lett. 100, 163102 (2012)] |
2012 |
Applied physics letters |
101 |
7 |
UA library record; WoS full record; WoS citing articles |
|
|
|
van Dyck, D.; Croitoru, M.D. |
Statistical method for thickness measurement of amorphous objects |
2007 |
Applied physics letters |
90 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. |
Impact of field-induced quantum confinement in tunneling field-effect devices |
2011 |
Applied physics letters |
98 |
76 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. |
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors |
2012 |
Applied physics letters |
100 |
25 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. |
Figure of merit for and identification of sub-60 mV/decade devices |
2013 |
Applied physics letters |
102 |
64 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vanherck, J.; Bacaksiz, C.; Sorée, B.; Milošević, M.V.; Magnus, W. |
2D ferromagnetism at finite temperatures under quantum scrutiny |
2020 |
Applied Physics Letters |
117 |
8 |
UA library record; WoS full record; WoS citing articles |
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