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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Schowalter, M.; Rosenauer, A.; Titantah, J.T.; Lamoen, D. Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure 2009 Acta crystallographica: section A: foundations of crystallography 65 23 UA library record; WoS full record; WoS citing articles doi
Verbeeck, J.; Sc hattschneider, P.; Rosenauer, A. Image simulation of high resolution energy filtered TEM images 2009 Ultramicroscopy 109 36 UA library record; WoS full record; WoS citing articles pdf doi
Schowalter, M.; Rosenauer, A.; Titantah, J.T.; Lamoen, D. Computation and parametrization of the temperature dependence of Debye-Waller factors for group IV, III-V and II-VI semiconductors 2009 Acta crystallographica: section A: foundations of crystallography 65 51 UA library record; WoS full record; WoS citing articles doi
Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. Size effects and strain state of Ga1-xInxAs/GaAs multiple quantum wells: Monte Carlo study 2008 Physical review : B : condensed matter and materials physics 78 5 UA library record; WoS full record; WoS citing articles url doi
Rosenauer, A.; Schowalter, M.; Titantah, J.T.; Lamoen, D. An emission-potential multislice approximation to simulate thermal diffuse scattering in high-resolution transmission electron microscopy 2008 Ultramicroscopy 108 25 UA library record; WoS full record; WoS citing articles doi
Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. Effect of temperature on the 002 electron structure factor and its consequence for the quantification of ternary and quaternary III-V crystals 2008 Springer proceedings in physics 120 UA library record; WoS full record;
Schowalter, M.; Rosenauer, A.; Titantah, J.T.; Lamoen, D. Calculation of Debye-Waller temperature factors for GaAs 2008 Springer proceedings in physics 120 UA library record; WoS full record;
Rossi, E.H.M.; Van Tendeloo, G.; Rosenauer, A. Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM 2007 Philosophical magazine 87 1 UA library record; WoS full record; WoS citing articles doi
Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. Temperature effect on the 002 structure factor of ternary Ga1-xInxAs crystals 2007 Physical review : B : condensed matter and materials physics 76 3 UA library record; WoS full record; WoS citing articles doi
Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. Bond length variation in Ga1-xInxAs crystals from the Tersoff potential 2007 Journal of applied physics 101 19 UA library record; WoS full record; WoS citing articles doi
Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kruse, P.; Gerthsen, D. Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold 2006 Applied Physics Letters 88 8 UA library record; WoS full record; WoS citing articles doi
Kruse, P.; Schowalter, M.; Lamoen, D.; Rosenauer, A.; Gerthsen, D. Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography 2006 Ultramicroscopy 106 50 UA library record; WoS full record; WoS citing articles doi
Piscopiello, E.; Rosenauer, A.; Passaseo, A.; Montoya Rossi, E.H.; Van Tendeloo, G. Segregation in InxGa1-xAs/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition 2005 Philosophical magazine 85 11 UA library record; WoS full record; WoS citing articles pdf doi
Rosenauer, A.; Schowalter, M.; Glas, F.; Lamoen, D. First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs 2005 Physical Review B 72 42 UA library record; WoS full record; WoS citing articles doi
Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R.; Waag, A. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography 2005 Applied Physics Letters 86 5 UA library record; WoS full record; WoS citing articles doi
Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kruse, P.; Gerthsen, D. Ab initio computation of the mean inner Coulomb potential of technological important semiconductors 2005 1007 UA library record; WoS full record;
Rosenauer, A.; Schowalter, M.; Glas, F.; Lamoen, D. First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs 2005 107 UA library record; WoS full record;
Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography 2005 Microscopy of Semiconducting Materials 107 UA library record; WoS full record; pdf
Schowalter, M.; Lamoen, D.; Kruse, P.; Gerthsen, D.; Rosenauer, A. First-principles calculations of the mean inner Coulomb potential for sphalerite type II.VI semiconductors 2004 Applied Physics Letters 85 16 UA library record; WoS full record; WoS citing articles doi
Rosenauer, A.; Gerthsen, D.; Van Aert, S.; van Dyck, D.; den Dekker, A.J. Present state of the composition evaluation of ternary semiconductor nanostructures by lattice fringe analysis 2003 Institute of physics conference series UA library record; WoS full record;
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