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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links  |
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Khalilov, U.; Pourtois, G.; van Duin, A.C.T.; Neyts, E.C. |
Hyperthermal oxidation of Si(100)2x1 surfaces : effect of growth temperature |
2012 |
The journal of physical chemistry: C : nanomaterials and interfaces |
116 |
32 |
UA library record; WoS full record; WoS citing articles |
|
|
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Khalilov, U.; Neyts, E.C.; Pourtois, G.; van Duin, A.C.T. |
Can we control the thickness of ultrathin silica layers by hyperthermal silicon oxidation at room temperature? |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
36 |
UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Sioncke, S.; Rip, J.; van Elshocht, S.; Caymax, M.; Pourtois, G.; Pierloot, K. |
Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
9 |
UA library record; WoS full record; WoS citing articles |
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Nourbakhsh, A.; Cantoro, M.; Klekachev, A.V.; Pourtois, G.; Vosch, T.; Hofkens, J.; van der Veen, M.H.; Heyns, M.M.; de Gendt, S.; Sels, B.F. |
Single layer vs bilayer graphene : a comparative study of the effects of oxygen plasma treatment on their electronic and optical properties |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
46 |
UA library record; WoS full record; WoS citing articles |
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Neyts, E.C.; Khalilov, U.; Pourtois, G.; van Duin, A.C.T. |
Hyperthermal oxygen interacting with silicon surfaces : adsorption, implantation, and damage creation |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
28 |
UA library record; WoS full record; WoS citing articles |
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Neyts, E.C.; Thijsse, B.J.; Mees, M.J.; Bal, K.M.; Pourtois, G. |
Establishing uniform acceptance in force biased Monte Carlo simulations |
2012 |
Journal of chemical theory and computation |
8 |
20 |
UA library record; WoS full record; WoS citing articles |
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Khalilov, U.; Pourtois, G.; van Duin, A.C.T.; Neyts, E.C. |
Self-limiting oxidation in small-diameter Si nanowires |
2012 |
Chemistry of materials |
24 |
45 |
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Houssa, M.; Radu, I.P.; Pourtois, G. |
Toward an understanding of the electric field-induced electrostatic doping in van der Waals heterostructures : a first-principles study |
2017 |
ACS applied materials and interfaces |
9 |
10 |
UA library record; WoS full record; WoS citing articles |
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Mehta, A.N.; Mo, J.; Pourtois, G.; Dabral, A.; Groven, B.; Bender, H.; Favia, P.; Caymax, M.; Vandervorst, W. |
Grain-boundary-induced strain and distortion in epitaxial bilayer MoS₂ lattice |
2020 |
Journal Of Physical Chemistry C |
124 |
2 |
UA library record; WoS full record; WoS citing articles |
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Pham, A.-T.; Sorée, B.; Magnus, W.; Jungemann, C.; Meinerzhagen, B.; Pourtois, G. |
Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations |
2012 |
Solid state electronics |
71 |
2 |
UA library record; WoS full record; WoS citing articles |
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Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. |
Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current |
2011 |
Solid state electronics |
65-66 |
2 |
UA library record; WoS full record; WoS citing articles |
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Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
First-principles study of strained 2D MoS2 |
2014 |
Physica. E: Low-dimensional systems and nanostructures |
56 |
72 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Garbin, D.; Devulder, W.; Keukelier, J.; Opsomer, K.; Goux, L.; Kar, G.S.; Pourtois, G. |
Material relaxation in chalcogenide OTS SELECTOR materials |
2019 |
Microelectronic engineering |
215 |
1 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Govoreanu, B.; Jurczak, M.; Pourtois, G. |
HfOx as RRAM material : first principles insights on the working principles |
2014 |
Microelectronic engineering |
120 |
22 |
UA library record; WoS full record; WoS citing articles |
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Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K. |
First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts |
2005 |
Microelectronic engineering |
80 |
31 |
UA library record; WoS full record; WoS citing articles |
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Hardy, A.; Van Elshocht, S.; De Dobbelaere, C.; Hadermann, J.; Pourtois, G.; De Gendt, S.; Afanas'ev, V.V.; Van Bael, M.K. |
Properties and thermal stability of solution processed ultrathin, high-k bismuth titanate (Bi2Ti2O7) films |
2012 |
Materials research bulletin |
47 |
|
UA library record; WoS full record; WoS citing articles |
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Neyts, E.; Maeyens, A.; Pourtois, G.; Bogaerts, A. |
A density-functional theory simulation of the formation of Ni-doped fullerenes by ion implantation |
2011 |
Carbon |
49 |
13 |
UA library record; WoS full record; WoS citing articles |
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Houssa, M.; van den Broek, B.; Scalise, E.; Ealet, B.; Pourtois, G.; Chiappe, D.; Cinquanta, E.; Grazianetti, C.; Fanciulli, M.; Molle, A.; Afanas’ev, V.V.; Stesmans, A.; |
Theoretical aspects of graphene-like group IV semiconductors |
2014 |
Applied surface science |
291 |
20 |
UA library record; WoS full record; WoS citing articles |
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van den Broek, B.; Houssa, M.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
First-principles electronic functionalization of silicene and germanene by adatom chemisorption |
2014 |
Applied surface science |
291 |
32 |
UA library record; WoS full record; WoS citing articles |
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Scalise, E.; Cinquanta, E.; Houssa, M.; van den Broek, B.; Chiappe, D.; Grazianetti, C.; Pourtois, G.; Ealet, B.; Molle, A.; Fanciulli, M.; Afanas’ev, V.V.; Stesmans, A.; |
Vibrational properties of epitaxial silicene layers on (111) Ag |
2014 |
Applied surface science |
291 |
36 |
UA library record; WoS full record; WoS citing articles |
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van den Broek, B.; Houssa, M.; Lu, A.; Pourtois, G.; Afanas'ev, V.; Stesmans, A. |
Silicene nanoribbons on transition metal dichalcogenide substrates : effects on electronic structure and ballistic transport |
2016 |
Nano Research |
9 |
2 |
UA library record; WoS full record; WoS citing articles |
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Scalise, E.; Houssa, M.; Pourtois, G.; van den Broek, B.; Afanas'ev, V.; Stesmans, A. |
Vibrational properties of silicene and germanene |
2013 |
Nano Research |
6 |
105 |
UA library record; WoS full record; WoS citing articles |
|
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Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.; Stesmans, A. |
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 |
2012 |
Nano Research |
5 |
407 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Belmonte, A.; Degraeve, R.; Fantini, A.; Goux, L.; Govoreanu, B.; Jurczak, M.; Ota, K.; Redolfi, A.; Kar, G.S.; Pourtois, G. |
Kinetic and thermodynamic heterogeneity : an intrinsic source of variability in Cu-based RRAM memories |
2017 |
Journal of computational electronics |
16 |
2 |
UA library record; WoS full record; WoS citing articles |
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Sorée, B.; Magnus, W.; Pourtois, G. |
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode |
2008 |
Journal of computational electronics |
7 |
70 |
UA library record; WoS full record; WoS citing articles |
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Phung, Q.M.; Vancoillie, S.; Delabie, A.; Pourtois, G.; Pierloot, K. |
Ruthenocene and cyclopentadienyl pyrrolyl ruthenium as precursors for ruthenium atomic layer deposition : a comparative study of dissociation enthalpies |
2012 |
Theoretical chemistry accounts : theory, computation, and modeling |
131 |
5 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Garbin, D.; Opsomer, K.; Avasarala, N.S.; Devulder, W.; Shlyakhov, I.; Keukelier, J.; Donadio, G.L.; Witters, T.; Kundu, S.; Govoreanu, B.; Goux, L.; Detavernier, C.; Afanas'ev, V.; Kar, G.S.; Pourtois, G. |
Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles |
2020 |
Physica Status Solidi-Rapid Research Letters |
|
3 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Sankaran, K.; Chen, Y.Y.; Fantini, A.; Celano, U.; Belmonte, A.; Zhang, L.; Goux, L.; Govoreanu, B.; Degraeve, R.; Wouters, D.J.; Jurczak, M.; Vandervorst, W.; Gendt, S.D.; Pourtois, G.; |
RRAMs based on anionic and cationic switching : a short overview |
2014 |
Physica status solidi: rapid research letters |
8 |
28 |
UA library record; WoS full record; WoS citing articles |
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van den Broek, B.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Current-voltage characteristics of armchair Sn nanoribbons |
2014 |
Physica status solidi: rapid research letters |
8 |
9 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Bhoolokam, A.; Pourtois, G.; Genoe, J.; Heremans, P. |
Oxygen vacancies effects in a-IGZO : formation mechanisms, hysteresis, and negative bias stress effects |
2017 |
Physica status solidi : A : applications and materials science |
214 |
8 |
UA library record; WoS full record; WoS citing articles |
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