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Author  |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
van den Broek, B.; Houssa, M.; Lu, A.; Pourtois, G.; Afanas'ev, V.; Stesmans, A. |
Silicene nanoribbons on transition metal dichalcogenide substrates : effects on electronic structure and ballistic transport |
2016 |
Nano Research |
9 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
van den Broek, B.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Current-voltage characteristics of armchair Sn nanoribbons |
2014 |
Physica status solidi: rapid research letters |
8 |
9 |
UA library record; WoS full record; WoS citing articles |
|
|
|
van den Broek, B.; Houssa, M.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
First-principles electronic functionalization of silicene and germanene by adatom chemisorption |
2014 |
Applied surface science |
291 |
32 |
UA library record; WoS full record; WoS citing articles |
|
|
|
van den Broek, B.; Houssa, M.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Two-dimensional hexagonal tin : ab initio geometry, stability, electronic structure and functionalization |
2014 |
2D materials |
1 |
58 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Loo, R.; Vandervorst, W. |
Evolution of phosphorus-vacancy clusters in epitaxial germanium |
2019 |
Journal of applied physics |
125 |
5 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Porret, C.; Loo, R.; Vandervorst, W. |
Heavily phosphorus doped germanium : strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation |
2019 |
Journal of applied physics |
125 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
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Vohra, A.; Makkonen, I.; Pourtois, G.; Slotte, J.; Porret, C.; Rosseel, E.; Khanam, A.; Tirrito, M.; Douhard, B.; Loo, R.; Vandervorst, W. |
Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx |
2020 |
Ecs Journal Of Solid State Science And Technology |
9 |
|
UA library record; WoS full record; WoS citing articles |
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Yu, H.; Schaekers, M.; Chew, S.A.; Eyeraert, J.-L.; Dabral, A.; Pourtois, G.; Horiguchi, N.; Mocuta, D.; Collaert, N.; De Meyer, K. |
Titanium (germano-)silicides featuring 10-9 Ω.cm2 contact resistivity and improved compatibility to advanced CMOS technology |
2018 |
2018 18th International Workshop On Junction Technology (iwjt) |
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|
UA library record; WoS full record |
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