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“Multilayer graphene, Moire patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC”. Xu P, Qi D, Schoelz JK, Thompson J, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Gaskill DK, Neek-Amal M, Peeters FM;, Carbon 80, 75 (2014). http://doi.org/10.1016/j.carbon.2014.08.028
Abstract: Epitaxial graphene is grown on a non-polar n(+) 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moire patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals information about the interplay between the energy required to bend graphene and the interaction energy, i.e. van der Waals energy, with the graphene layer below. Our experiments are supported by theoretical calculations which predict that the membrane topographical amplitude scales with the Moire pattern wavelength, L as L-1 + alpha L-2. (C) 2014 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 6.337
Times cited: 14
DOI: 10.1016/j.carbon.2014.08.028
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“Crystal fields, disorder, and antiferromagnetic short-range order in Yb0.24Sn0.76Ru”. Klimczuk T, Wang CH, Lawrence JM, Xu Q, Durakiewicz T, Ronning F, Llobet A, Trouw F, Kurita N, Tokiwa Y, Lee Ho, Booth CH, Gardner JS, Bauer ED, Joyce JJ, Zandbergen HW, Movshovich R, Cava RJ, Thompson JD;, Physical review : B : condensed matter and materials physics 84, 075152 (2011). http://doi.org/10.1103/PhysRevB.84.075152
Abstract: We report extensive measurements on a new compound (Yb0.24Sn0.76)Ru that crystallizes in the cubic CsCl structure. Valence-band photoemission (PES) and L3 x-ray absorption show no divalent component in the 4f configuration of Yb. Inelastic neutron scattering (INS) indicates that the eight-fold degenerate J-multiplet of Yb3+ is split by the crystalline electric field (CEF) into a Γ7-doublet ground state and a Γ8 quartet at an excitation energy 20 meV. The magnetic susceptibility can be fit very well by this CEF scheme under the assumption that a Γ6-excited state resides at 32 meV; however, the Γ8/Γ6 transition expected at 12 meV was not observed in the INS. The resistivity follows a Bloch-Grüneisen law shunted by a parallel resistor, as is typical of systems subject to phonon scattering with no apparent magnetic scattering. All of these properties can be understood as representing simple local moment behavior of the trivalent Yb ion. At 1 K there is a peak in specific heat that is too broad to represent a magnetic-phase transition, consistent with absence of magnetic reflections in neutron diffraction. On the other hand this peak also is too narrow to represent the Kondo effect in the Γ7-doublet ground state. On the basis of the field dependence of the specific heat, we argue that antiferromagnetic (AF) short-range order (SRO) (possibly coexisting with Kondo physics) occurs at low temperatures. The long-range magnetic order is suppressed because the Yb site occupancy is below the percolation threshold for this disordered compound.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.84.075152
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“Crystal growth of CsCl-type Yb0.24Sn0.76Ru”. Klimczuk T, Wang CH, Xu Q, Lawrence J, Durakiewicz T, Ronning F, Llobet A, Bauer ED, Griveau J-C, Sadowski W, Zandbergen HW, Thompson JD, Cava RJ, Journal of crystal growth 318, 1005 (2011). http://doi.org/10.1016/j.jcrysgro.2010.10.045
Abstract: The YbRuSn ternary system was investigated and a new material, Yb0.24Sn0.76Ru, with a simple cubic crystal structure, was discovered. Yb0.24Sn0.76Ru has a smaller lattice parameter a=3.217(4) Å, than its isostructural YbRu analogue (a=3.360 Å). Both X-ray diffraction and electron microscopy techniques were used to refine the crystal structure of Yb0.24Sn0.76Ru. It was found that a new compound forms in the CsCl structure, with Ru on the 1a site and a (Yb, Sn) mixture on site 1b. The XRD Rietveld analysis provides the occupation of Yb equal to 0.24, in agreement with the single crystal nano-electron diffraction refinement, which gives the occupation 0.21.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 1
DOI: 10.1016/j.jcrysgro.2010.10.045
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