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Ab initio study of hydrogenic effective mass impurities in Si nanowires”. Peelaers H, Durgun E, Partoens B, Bilc DI, Ghosez P, Van de Walle CG, Peeters FM, Journal of physics : condensed matter 29, 095303 (2017). http://doi.org/10.1088/1361-648X/AA5768
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Interplay between lattice dynamics and superconductivity in Nb3Sn thin films”. Couet S, Peelaers H, Trekels M, Houben K, Petermann C, Hu MY, Zhao JY, Bi W, Alp EE, Menéndez E, Partoens B, Peeters FM, Van Bael MJ, Vantomme A, Temst K;, Physical review : B : condensed matter and materials physics 88, 045437 (2013). http://doi.org/10.1103/PhysRevB.88.045437
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Free-standing Si and Ge, and Ge/Si core-shell semiconductor nanowires”. Peelaers H, Partoens B, Peeters FM, Acta physica Polonica: A: general physics, solid state physics, applied physics T2 –, WELCOME Scientific Meeting on Hybrid Nanostructures, AUG 28-31, 2011, Torun, POLAND 122, 294 (2012)
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Hydrogenated cation vacancies in semiconducting oxides”. Varley JB, Peelaers H, Janotti A, van de Walle CG, Journal of physics : condensed matter 23, 334212 (2011). http://doi.org/10.1088/0953-8984/23/33/334212
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Vibrational properties of graphene fluoride and graphane”. Peelaers H, Hernández-Nieves AD, Leenaerts O, Partoens B, Peeters FM, Applied physics letters 98, 051914 (2011). http://doi.org/10.1063/1.3551712
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Convergence of quasiparticle band structures of Si and Ge nanowires in the GW approximation and the validity of scissor shifts”. Peelaers H, Partoens B, Giantomassi M, Rangel T, Goossens E, Rignanese G-M, Gonze X, Peeters FM, Physical review : B : condensed matter and materials physics 83, 045306 (2011). http://doi.org/10.1103/PhysRevB.83.045306
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First-principles investigation of graphene fluoride and graphane”. Leenaerts O, Peelaers H, Hernández-Nieves AD, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 82, 195436 (2010). http://doi.org/10.1103/PhysRevB.82.195436
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Electronic and dynamical properties of Si/Ge core-shell nanowires”. Peelaers H, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 82, 113411 (2010). http://doi.org/10.1103/PhysRevB.82.113411
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Phonon band structures of Si nanowires”. Peelaers H, Partoens B, Peeters FM, AIP conference proceedings 1199, 323 (2009). http://doi.org/10.1063/1.3295432
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Phonons in Ge nanowires”. Peelaers H, Partoens B, Peeters FM, Applied physics letters 95, 122110 (2009). http://doi.org/10.1063/1.3236526
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Phonon band structure of Si nanowires: a stability analysis”. Peelaers H, Partoens B, Peeters FM, Nano letters 9, 107 (2009). http://doi.org/10.1021/nl802613p
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First-principles study of doped Si and Ge nanowires”. Peelaers H, Partoens B, Peeters FM, Physica. E: Low-dimensional systems and nanostructures 40, 2169 (2008). http://doi.org/10.1016/j.physe.2007.10.090
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Properties of B and P doped Ge nanowires”. Peelaers H, Partoens B, Peeters FM, Applied physics letters 90, 263103 (2007). http://doi.org/10.1063/1.2752107
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Dynamics of scattering on a classical two-dimensional artificial atom”. Peelaers H, Partoens B, Tatyanenko DV, Peeters FM, Physical review : E : statistical physics, plasmas, fluids, and related interdisciplinary topics 75, 036606 (2007). http://doi.org/10.1103/PhysRevE.75.036606
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Formation and segregation energies of B and P doped and BP codoped silicon nanowires”. Peelaers H, Partoens B, Peeters FM, Nano letters 6, 2781 (2006). http://doi.org/10.1021/nl061811p
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