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Author Peelaers, H.; Partoens, B.; Peeters, F.M. url  openurl
  Title Free-standing Si and Ge, and Ge/Si core-shell semiconductor nanowires Type A1 Journal article
  Year (down) 2012 Publication Acta physica Polonica: A: general physics, solid state physics, applied physics T2 – WELCOME Scientific Meeting on Hybrid Nanostructures, AUG 28-31, 2011, Torun, POLAND Abbreviated Journal Acta Phys Pol A  
  Volume 122 Issue 2 Pages 294-298  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The properties of free-standing silicon and germanium nanowires oriented along the [110] direction are studied using different first principles methods. We show the corrections due to quasi-particles to the band structures obtained using the local-density approximation. The formation energies of B and P doped nanowires are calculated, both in the absence and presence of dangling bond defects and we link these to experimental results. Furthermore, we report on the phonon properties of pure Si and Ge nanowires, as well as Ge/Si core-shell nanowires, and discuss the differences between them.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Warszawa Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0587-4246 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor 0.469 Times cited Open Access  
  Notes Approved Most recent IF: 0.469; 2012 IF: 0.531  
  Call Number UA @ lucian @ c:irua:101896 Serial 1277  
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