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Electronic properties of oxidized graphene : effects of strain and an electric field on flat bands and the energy gap”. Alihosseini M, Ghasemi S, Ahmadkhani S, Alidoosti M, Esfahani DN, Peeters FM, Neek-Amal M, The journal of physical chemistry letters (2021). http://doi.org/10.1021/ACS.JPCLETT.1C03286
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Electric-field-driven Mott metal-insulator transition in correlated thin films : an inhomogeneous dynamical mean-field theory approach”. Bakalov P, Esfahani DN, Covaci L, Peeters FM, Tempere J, Locquet J-P, Physical review : B : condensed matter and materials physics 93, 165112 (2016). http://doi.org/10.1103/PhysRevB.93.165112
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Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2)”. Martens K, Jeong JW, Aetukuri N, Rettner C, Shukla N, Freeman E, Esfahani DN, Peeters FM, Topuria T, Rice PM, Volodin A, Douhard B, Vandervorst W, Samant MG, Datta S, Parkin SSP, Physical review letters 115, 196401 (2015). http://doi.org/10.1103/PhysRevLett.115.196401
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Nonlinear response to electric field in extended Hubbard models”. Esfahani DN, Covaci L, Peeters FM, Physical review : B : condensed matter and materials physics 90, 205121 (2014). http://doi.org/10.1103/PhysRevB.90.205121
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Field effect on surface states in a doped Mott-insulator thin film”. Esfahani DN, Covaci L, Peeters FM, Physical review : B : condensed matter and materials physics 87, 035131 (2013). http://doi.org/10.1103/PhysRevB.87.035131
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