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Records |
Links |
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Author |
Nikolaev, A.V.; Michel, K.H. |
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Title |
Many electron- and hole terms of molecular ions C60n\pm |
Type |
A1 Journal article |
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Year |
2003 |
Publication |
Coupling In Chemistry And Physics |
Abbreviated Journal |
Adv Quantum Chem |
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Volume |
44 |
Issue |
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Pages |
305-312 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000188940800019 |
Publication Date |
2004-05-19 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0065-3276; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.196 |
Times cited |
1 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.196; 2003 IF: 0.375 |
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Call Number |
UA @ lucian @ c:irua:104131 |
Serial |
1942 |
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Permanent link to this record |
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Author |
Piacente, G.; Schweigert, I.V.; Betouras, J.J.; Peeters, F.M. |
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Title |
Structural properties and melting of a quasi-one dimensional classical Wigner crystal |
Type |
A1 Journal article |
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Year |
2003 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
128 |
Issue |
2-3 |
Pages |
57-61 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The structural and melting properties of a quasi-one dimensional system of charged particles, interacting through a screened Coulomb potential are investigated. Depending on the density and the screening length, the system crystallizes in different lattice structures. The structural phase transitions between them are of first or second order. The melting of the system is studied through Monte Carlo simulations and reentrant behavior as a function of density is observed as well as evidence of anisotropic melting. (C) 2003 Published by Elsevier Ltd. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000185533100004 |
Publication Date |
2003-08-12 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.554 |
Times cited |
9 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.554; 2003 IF: 1.602 |
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Call Number |
UA @ lucian @ c:irua:102790 |
Serial |
3253 |
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Permanent link to this record |
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Author |
Ferreira, W.P.; Farias, G.A.; Carmona, H.A.; Peeters, F.M. |
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Title |
Structural transitions in a classical two-dimensional molecule system |
Type |
A1 Journal article |
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Year |
2002 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
122 |
Issue |
12 |
Pages |
665-669 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The ground state of a classical two-dimensional (2D) system with a finite number of charge particles, trapped by two positive impurity charges localized at a distance (z(0)) from the. 2D plane and separated from each other by a distance chi(p) are obtained. The impurities are allowed to carry more than one positive charge. This classical system can form a 2D-like classical molecule that exhibits structural transitions and spontaneous symmetry breaking as function of the separation between the positive charges before it transforms into two 2D-like classical atoms. We also observe structural transitions as a function of the dielectric constant of the substrate which supports the charged particles, in addition to broken symmetry states and unbinding of particles. (C) 2002 Elsevier Science Ltd. All rights reserved. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000177129500008 |
Publication Date |
2002-10-11 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.554 |
Times cited |
3 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.554; 2002 IF: 1.671 |
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Call Number |
UA @ lucian @ c:irua:95137 |
Serial |
3268 |
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Permanent link to this record |
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Author |
Chang, K.; Peeters, F.M. |
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Title |
Spin-polarized tunneling through diluted magnetic semiconductor barriers |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
120 |
Issue |
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Pages |
181-184 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000171685400001 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.554 |
Times cited |
35 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.554; 2001 IF: 1.381 |
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Call Number |
UA @ lucian @ c:irua:37303 |
Serial |
3099 |
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Permanent link to this record |
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Author |
Ivanov, V.A.; van den Broek, M.; Peeters, F.M. |
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Title |
Strongly interacting σ-electrons and MgB2 superconductivity |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
120 |
Issue |
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Pages |
53-57 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000171221900001 |
Publication Date |
2002-10-31 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.554 |
Times cited |
5 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.554; 2001 IF: 1.381 |
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Call Number |
UA @ lucian @ c:irua:37304 |
Serial |
3187 |
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Permanent link to this record |
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Author |
Nikolaev, A.V.; Michel, K.H. |
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Title |
Electronic structure and electric quadrupoles of a polymerized chain in solid AC60 |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
117 |
Issue |
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Pages |
739-743 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000167538300010 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.554 |
Times cited |
10 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.554; 2001 IF: 1.381 |
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Call Number |
UA @ lucian @ c:irua:36881 |
Serial |
1009 |
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Permanent link to this record |
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Author |
Matulis, A.; Peeters, F.M. |
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Title |
Wigner crystallization in the two electron quantum dot |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
117 |
Issue |
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Pages |
655-660 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000167475900006 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.554 |
Times cited |
34 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.554; 2001 IF: 1.381 |
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Call Number |
UA @ lucian @ c:irua:37305 |
Serial |
3920 |
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Permanent link to this record |
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Author |
Janssens, K.L.; Partoens, B.; Peeters, F.M. |
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Title |
Type II quantum dots in magnetic fields: excitonic behaviour |
Type |
A1 Journal article |
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Year |
2003 |
Publication |
Microelectronics journal |
Abbreviated Journal |
Microelectron J |
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Volume |
34 |
Issue |
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Pages |
347-350 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Luton |
Editor |
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Language |
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Wos |
000183607400007 |
Publication Date |
2003-04-23 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0026-2692; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.163 |
Times cited |
1 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.163; 2003 IF: 0.565 |
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Call Number |
UA @ lucian @ c:irua:62450 |
Serial |
3790 |
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Permanent link to this record |
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Author |
Janyavula, S.; Lawson, N.; Çakir, D.; Beck, P.; Ramp, L.C.; Burgess, J.O. |
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Title |
The wear of polished and glazed zirconia against enamel |
Type |
A1 Journal article |
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Year |
2013 |
Publication |
Journal Of Prosthetic Dentistry |
Abbreviated Journal |
J Prosthet Dent |
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Volume |
109 |
Issue |
1 |
Pages |
22-29 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Statement of problem. The wear of tooth structure opposing anatomically contoured zirconia crowns requires further investigation. Purpose. The purpose of this in vitro study was to measure the roughness and wear of polished, glazed, and polished then reglazed zirconia against human enamel antagonists and compare the measurements to those of veneering porcelain and natural enamel. Material and methods. Zirconia specimens were divided into polished, glazed, and polished then reglazed groups (n=8). A veneering porcelain (Ceramco3) and enamel were used as controls. The surface roughness of all pretest specimens was measured. Wear testing was performed in the newly designed Alabama wear testing device. The mesiobuccal cusps of extracted molars were standardized and used as antagonists. Three-dimensional (3D) scans of the specimens and antagonists were obtained at baseline and after 200 000 and 400 000 cycles with a profilometer. The baseline scans were superimposed on the posttesting scans to determine volumetric wear. Data were analyzed with a 1-way ANOVA and Tukey Honestly Significant Difference (HSD) post hoc tests (alpha=.05) Results. Surface roughness ranked in order of least rough to roughest was: polished zirconia, glazed zirconia, polished then reglazed zirconia, veneering porcelain, and enamel. For ceramic, there was no measureable loss on polished zirconia, moderate loss on the surface of enamel, and significant loss on glazed and polished then reglazed zirconia. The highest ceramic wear was exhibited by the veneering ceramic. For enamel antagonists, polished zirconia caused the least wear, and enamel caused moderate wear. Glazed and polished then reglazed zirconia showed significant opposing enamel wear, and veneering porcelain demonstrated the most. Conclusions. Within the limitations of the study, polished zirconia is wear-friendly to the opposing tooth. Glazed zirconia causes more material and antagonist wear than polished zirconia. The surface roughness of the zirconia aided in predicting the wear of the opposing dentition. (J Prosthet Dent 2013;109:22-29) |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
St. Louis, Mo. |
Editor |
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Language |
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Wos |
000313934900004 |
Publication Date |
2013-01-15 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-3913 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.095 |
Times cited |
89 |
Open Access |
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Notes |
; ; |
Approved |
Most recent IF: 2.095; 2013 IF: 1.419 |
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Call Number |
UA @ lucian @ c:irua:128327 |
Serial |
4612 |
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Permanent link to this record |
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Author |
Bussmann-Holder, A.; Dalal, N.; Michel, K.H. |
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Title |
Polarizability induced cooperative proton ordering, coexistence of order/disorder and displacive dynamics and isotope effects in hydrogen-bonded systems |
Type |
A1 Journal article |
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Year |
2000 |
Publication |
The journal of physics and chemistry of solids
T2 – Williamsburg Workshop on Ferroelectrics 99, JAN 31-FEB 03, 1999, WILLIAMSBURG, VIRGINIA |
Abbreviated Journal |
J Phys Chem Solids |
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Volume |
61 |
Issue |
2 |
Pages |
271-274 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Despite the general belief that hydrogen-bonded ferro- and antiferroelectrics undergo a pure order/disorder transition at the structural instability, new NMR data and a new theoretical concept yield convincing evidence that a pronounced displacive component is present in these systems, which modifies substantially the temperature dependencies of the tunnel and lattice mode frequencies. The experiments and their interpretation are presented. (C) 1999 Elsevier Science Ltd. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Pergamon-elsevier science ltd |
Place of Publication |
Oxford |
Editor |
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Language |
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Wos |
000084147000020 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-3697; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.059 |
Times cited |
8 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.059; 2000 IF: 1.003 |
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Call Number |
UA @ lucian @ c:irua:103469 |
Serial |
2660 |
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Permanent link to this record |
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Author |
Croitoru, M.D.; van Dyck, D.; Liu, Y.Z.; Zhang, Z. |
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Title |
Measurement of specimen thickness by phase change determination in TEM |
Type |
A1 Journal article |
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Year |
2008 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
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Volume |
108 |
Issue |
12 |
Pages |
1616-1622 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT); Vision lab |
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Abstract |
A non-destructive method for measuring the thickness of thin amorphous films composed of light elements has been developed. The method employs the statistics of the phase of the electron exit wave function. The accuracy of this method has been checked numerically by the multislice method and compared with that based on the mean inner potential. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000260808300016 |
Publication Date |
2008-06-23 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0304-3991; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.843 |
Times cited |
2 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.843; 2008 IF: 2.629 |
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Call Number |
UA @ lucian @ c:irua:75643 |
Serial |
1961 |
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Permanent link to this record |
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Author |
Croitoru, M.D.; van Dyck, D.; Van Aert, S.; Bals, S.; Verbeeck, J. |
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Title |
An efficient way of including thermal diffuse scattering in simulation of scanning transmission electron microscopic images |
Type |
A1 Journal article |
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Year |
2006 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
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Volume |
106 |
Issue |
10 |
Pages |
933-940 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT); Vision lab |
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Abstract |
We propose an improved image simulation procedure for atomic-resolution annular dark-field scanning transmission electron microscopy (STEM) based on the multislice formulation, which takes thermal diffuse scattering fully into account. The improvement with regard to the classical frozen phonon approach is realized by separating the lattice configuration statistics from the dynamical scattering so as to avoid repetitive calculations. As an example, the influence of phonon scattering on the image contrast is calculated and investigated. STEM image simulation of crystals can be applied with reasonable computing times to problems involving a large number of atoms and thick or large supercells. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000240397200006 |
Publication Date |
2006-05-10 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0304-3991; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.843 |
Times cited |
18 |
Open Access |
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Notes |
Fwo; Fwo-V |
Approved |
Most recent IF: 2.843; 2006 IF: 1.706 |
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Call Number |
UA @ lucian @ c:irua:87604UA @ admin @ c:irua:87604 |
Serial |
876 |
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Permanent link to this record |
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Author |
Oueslati, S.; Brammertz, G.; Buffiere, M.; ElAnzeery, H.; Touayar, O.; Koeble, C.; Bekaert, J.; Meuris, M.; Poortmans, J. |
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Title |
Physical and electrical characterization of high-performance Cu2ZnSnSe4 based thin film solar cells |
Type |
A1 Journal article |
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Year |
2015 |
Publication |
Thin solid films : an international journal on the science and technology of thin and thick films |
Abbreviated Journal |
Thin Solid Films |
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Volume |
582 |
Issue |
582 |
Pages |
224-228 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We report on the electrical, optical and physical properties of Cu2ZnSnSe4 solar cells using an absorber layer fabricated by selenization of sputtered Cu, Zn and Cu10Sn90 multilayers. A maximum active-area conversion efficiency of 10.4% under AM1.5G was measured with a maximum short circuit current density of 39.7 mA/cm(2), an open circuit voltage of 394 mV and a fill factor of 66.4%. We perform electrical and optical characterization using photoluminescence spectroscopy, external quantum efficiency, current-voltage and admittance versus temperature measurements in order to derive information about possible causes for the low open circuit voltage values observed. The main defects derived from these measurements are strong potential fluctuations in the absorber layer as well as a potential barrier of the order of 133 meV at the back side contact. (C) 2014 Elsevier B.V. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
000352225900048 |
Publication Date |
2014-10-20 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0040-6090 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.879 |
Times cited |
49 |
Open Access |
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Notes |
; We would like to acknowledge Tom De Geyter, Greetje Godiers, and Guido Huyberechts from Flamac in Gent for sputtering of the metal layers. AGC is acknowledged for providing substrates. This research is partially funded by the Flemish government, Department Economy, Science and Innovation. ; |
Approved |
Most recent IF: 1.879; 2015 IF: 1.759 |
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Call Number |
UA @ lucian @ c:irua:132504 |
Serial |
4225 |
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Permanent link to this record |
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Author |
Hoat, D.M.; Duy Khanh Nguyen; Bafekry, A.; Vo Van On; Ul Haq, B.; Hoang, D.-Q.; Cocoletzi, G.H.; Rivas-Silva, J.F. |
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Title |
Developing feature-rich electronic and magnetic properties in the beta-As monolayer for spintronic and optoelectronic applications by C and Si doping : a first-principles study |
Type |
A1 Journal article |
|
Year |
2021 |
Publication |
Surfaces and interfaces |
Abbreviated Journal |
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|
|
Volume |
27 |
Issue |
|
Pages |
101534 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
In this work, the carbon (C) and silicon (Si) doping and codoping effects on beta-arsenene (As) monolayer structural, electronic, and magnetic properties have been comprehensively investigated using first-principles calculations. The studied two-dimensional (2D) materials exhibit good stability. Pristine beta-As single layer is an indirect gap semiconductor with a band gap of 1.867(2.441) eV as determined by PBE(HSE06) functional. Due to the difference in atomic size and electronic interactions, C and Si substitution induces a significant local structural distortion. Depending upon dopant concentration and doping sites, feature-rich electronic properties including non-magnetic semiconductor, magnetic semiconductor and half-metallicity may be obtained, which result from p-p interactions. High spin-polarization at the Fermi level vicinity and significant magnetism suggest As:1C, As:2C, As:1Si, As:2Si, and As:CSi systems as prospective spintronic 2D materials. While, the C-C, Si-Si, and C-Si dimer doping decreases electronic band gap, making the layer more suitable for applications in optoelectronic devices. Results presented herein may suggest an efficient approach to create novel multi-functional 2D materials from beta-As monolayer. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000711791100002 |
Publication Date |
2021-10-19 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2468-0230 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
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Open Access |
Not_Open_Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ admin @ c:irua:184138 |
Serial |
6979 |
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Permanent link to this record |
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Author |
Deylgat, E.; Chen, E.; Fischetti, M.V.; Sorée, B.; Vandenberghe, W.G. |
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Title |
Image-force barrier lowering in top- and side-contacted two-dimensional materials |
Type |
A1 Journal article |
|
Year |
2022 |
Publication |
Solid state electronics |
Abbreviated Journal |
Solid State Electron |
|
|
Volume |
198 |
Issue |
|
Pages |
108458-4 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We compare the image-force barrier lowering (IFBL) and calculate the resulting contact resistance for four different metal-dielectric-two-dimensional (2D) material configurations. We analyze edge contacts in three different geometries (a homogeneous dielectric throughout, including the 2D layer; a homogeneous dielectric surrounding the 2D layer, both ungated and back gated) and also a top-contact assuming a homogeneous dielectric. The image potential energy of each configuration is determined and added to the Schottky energy barrier which is calculated assuming a textbook Schottky potential. For each configuration, the contact resistivity is calculated using the WKB approximation and the effective mass approximation using either SiO2 or HfO2 as the surrounding dielectric. We obtain the lowest contact resistance of 1 k Omega mu m by n-type doping an edge contacted transition metal-dichalcogenide (TMD) monolayer, sandwiched between SiO2 dielectric, with similar to 1012 cm-2 donor atoms. When this optimal configuration is used, the contact resistance is lowered by a factor of 50 compared to the situation when the IFBL is not considered. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000876289800003 |
Publication Date |
2022-09-22 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0038-1101 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.7 |
Times cited |
|
Open Access |
Not_Open_Access |
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Notes |
|
Approved |
Most recent IF: 1.7 |
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Call Number |
UA @ admin @ c:irua:191556 |
Serial |
7312 |
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Permanent link to this record |
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Author |
Carrillo-Nunez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
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Title |
Phonon-assisted Zener tunneling in a p-n diode silicon nanowire |
Type |
A1 Journal article |
|
Year |
2013 |
Publication |
Solid state electronics |
Abbreviated Journal |
Solid State Electron |
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Volume |
79 |
Issue |
|
Pages |
196-200 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The Zener tunneling current flowing through a biased, abrupt p-n junction embedded in a cylindrical silicon nanowire is calculated. As the band gap becomes indirect for sufficiently thick wires, Zener tunneling and its related transitions between the valence and conduction bands are mediated by short-wavelength phonons interacting with mobile electrons. Therefore, not only the high electric field governing the electrons in the space-charge region but also the transverse acoustic (TA) and transverse optical (TO) phonons have to be incorporated in the expression for the tunneling current. The latter is also affected by carrier confinement in the radial direction and therefore we have solved the Schrodinger and Poisson equations self-consistently within the effective mass approximation for both conduction and valence band electrons. We predict that the tunneling current exhibits a pronounced dependence on the wire radius, particularly in the high-bias regime. (C) 2012 Elsevier Ltd. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Oxford |
Editor |
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Language |
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Wos |
000313611000037 |
Publication Date |
2012-09-29 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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|
ISSN |
0038-1101; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.58 |
Times cited |
2 |
Open Access |
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Notes |
; This work is supported by the Flemish Science Foundation (FWO-VI), and the Interuniversity Attraction Poles, Belgium State, Belgium Science Policy, and IMEC. One of the authors (W. Vandenberghe) gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). ; |
Approved |
Most recent IF: 1.58; 2013 IF: 1.514 |
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Call Number |
UA @ lucian @ c:irua:110104 |
Serial |
2600 |
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Permanent link to this record |
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Author |
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
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Title |
Modeling the impact of junction angles in tunnel field-effect transistors |
Type |
A1 Journal article |
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Year |
2012 |
Publication |
Solid state electronics |
Abbreviated Journal |
Solid State Electron |
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Volume |
69 |
Issue |
|
Pages |
31-37 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We develop an analytical model for a tunnel field-effect transistor (TFET) with a tilted source junction angle. The tunnel current is derived by using circular tunnel paths along the electric field. The analytical model predicts that a smaller junction angle improves the TFET performance, which is supported by device simulations. An analysis is also made based on straight tunnel paths and tunnel paths corresponding to the trajectory of a classical particle. In all the aforementioned cases, the same conclusions are obtained. A TFET configuration with an encroaching polygon source junction is studied to analyze the junction angle dependence at the smallest junction angles. The improvement of the subthreshold swing (SS) with decreasing junction angle can be achieved by using thinner effective oxide thickness, smaller band gap material and longer encroaching length of the encroaching junction. A TFET with a smaller junction angle on the source side also has an innate immunity against the degradation of the fringing field from the gate electrode via a high-k spacer. A large junction angle on the drain side can suppress the unwanted ambipolar current of TFETs. (c) 2011 Elsevier Ltd. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Oxford |
Editor |
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Language |
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Wos |
000301561600009 |
Publication Date |
2012-01-16 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1101; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.58 |
Times cited |
9 |
Open Access |
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Notes |
; We acknowledge the input on nanowire processing of Rita Rooyackers and useful discussions with Wim Magnus. William Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was also supported by imec's Industrial Affiliation Program. ; |
Approved |
Most recent IF: 1.58; 2012 IF: 1.482 |
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Call Number |
UA @ lucian @ c:irua:97816 |
Serial |
2145 |
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Permanent link to this record |
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Author |
Pham, A.-T.; Sorée, B.; Magnus, W.; Jungemann, C.; Meinerzhagen, B.; Pourtois, G. |
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Title |
Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations |
Type |
A1 Journal article |
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Year |
2012 |
Publication |
Solid state electronics |
Abbreviated Journal |
Solid State Electron |
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Volume |
71 |
Issue |
|
Pages |
30-36 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
Simulation results of electrostatics in Si cylindrical junctionless nanowire transistors with a homogenous channel are presented. Junctionless transistors including strain and arbitrary crystallographic orientations are studied. Size quantization effects are simulated by self-consistent solutions of the Poisson and Schrodinger equations. The 6 x 6 k.p method is employed for the calculation of the valence subband structure in a junctionless nanowire pFET. The influence of stress/strain and crystallographic channel orientation on to the electrostatics in terms of subband structure, charge density, and C-V curve is systematically studied. (C) 2011 Elsevier Ltd. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Oxford |
Editor |
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Language |
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Wos |
000303033800007 |
Publication Date |
2011-12-01 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1101; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.58 |
Times cited |
2 |
Open Access |
|
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Notes |
; ; |
Approved |
Most recent IF: 1.58; 2012 IF: 1.482 |
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Call Number |
UA @ lucian @ c:irua:98245 |
Serial |
2786 |
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Permanent link to this record |
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Author |
Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. |
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Title |
Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current |
Type |
A1 Journal article |
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Year |
2011 |
Publication |
Solid state electronics |
Abbreviated Journal |
Solid State Electron |
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Volume |
65-66 |
Issue |
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Pages |
64-71 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
Strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs are investigated including important aspects like CV characteristics, mobility, and ON current. The simulations are based on the self-consistent solution of 6 × 6 k · p Schrödinger Equation, multi subband Boltzmann Transport Equation and Poisson Equation, and capture size quantization, strain, crystallographic orientation, and SiGe alloy effects on a solid physical basis. The simulation results are validated by comparison with different experimental data sources. The simulation results show that the strained SiGe HOI PMOSFET with (1 1 0) surface orientation has a higher gate capacitance and a much higher mobility and ON current compared to a similar device with the traditional (0 0 1) surface orientation. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Oxford |
Editor |
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Language |
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Wos |
000297182700012 |
Publication Date |
2011-07-29 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1101; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.58 |
Times cited |
2 |
Open Access |
|
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Notes |
; ; |
Approved |
Most recent IF: 1.58; 2011 IF: 1.397 |
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Call Number |
UA @ lucian @ c:irua:92866 |
Serial |
433 |
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Permanent link to this record |
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Author |
Chaves, A.; Peeters, F.M. |
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Title |
Tunable effective masses of magneto-excitons in two-dimensional materials |
Type |
A1 Journal article |
|
Year |
2021 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
334 |
Issue |
|
Pages |
114371 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Excitonic properties of Ge2H2 and Sn2H2, also known as Xanes, are investigated within the effective mass model. A perpendicularly applied magnetic field induces a negative shift on the exciton center-of-mass kinetic energy that is approximately quadratic with its momentum, thus pushing down the exciton dispersion curve and flattening it. This can be interpreted as an increase in the effective mass of the magneto-exciton, tunable by the field intensity. Our results show that in low effective mass two-dimensional semiconductors, such as Xanes, the applied magnetic field allows one to tune the magneto-exciton effective mass over a wide range of values. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000670329600003 |
Publication Date |
2021-05-14 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
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Edition |
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ISSN |
0038-1098 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.554 |
Times cited |
|
Open Access |
Not_Open_Access |
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Notes |
|
Approved |
Most recent IF: 1.554 |
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Call Number |
UA @ admin @ c:irua:179762 |
Serial |
7037 |
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Permanent link to this record |
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Author |
Zhao, C.X.; Xu, W.; Dong, H.M.; Yu, Y.; Qin, H.; Peeters, F.M. |
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Title |
Enhancement of plasmon-photon coupling in grating coupled graphene inside a Fabry-Perot cavity |
Type |
A1 Journal article |
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Year |
2018 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
280 |
Issue |
280 |
Pages |
45-49 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We present a theoretical investigation of the plasmon-polariton modes in grating coupled graphene inside a Fabry-Perot cavity. The cavity or photon modes of the device are determined by the Finite Difference Time Domain (FDTD) simulations and the corresponding plasmon-polariton modes are obtained by applying a many-body self-consistent field theory. We find that in such a device structure, the electric field strength of the incident electromagnetic (EM) field can be significantly enhanced near the edges of the grating strips. Thus, the strong coupling between the EM field and the plasmons in graphene can be achieved and the features of the plasmon-polariton oscillations in the structure can be observed. It is found that the frequencies of the plasmon-polariton modes are in the terahertz (THz) bandwidth and depend sensitively on electron density which can be tuned by applying a gate voltage. Moreover, the coupling between the cavity photons and the plasmons in graphene can be further enhanced by increasing the filling factor of the device. This work can help us to gain an in-depth understanding of the THz plasmonic properties of graphene-based structures. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000439059600008 |
Publication Date |
2018-06-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.554 |
Times cited |
1 |
Open Access |
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Notes |
; This work is supported by the National Natural Science Foundation of China (Grand No. 11604192 and Grant No. 11574319); the Center of Science and Technology of Hefei Academy of Science; the Ministry of Science and Technology of China (Grant No. 2011YQ130018); Department of Science and Technology of Yunnan Province; Chinese Academy of Sciences. ; |
Approved |
Most recent IF: 1.554 |
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Call Number |
UA @ lucian @ c:irua:152369UA @ admin @ c:irua:152369 |
Serial |
5024 |
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Permanent link to this record |
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Author |
Petrovic, M.D.; Peeters, F.M. |
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Title |
Quantum transport in graphene Hall bars : effects of side gates |
Type |
A1 Journal article |
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Year |
2017 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
257 |
Issue |
257 |
Pages |
20-26 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau levels, and creates new propagating states in the Landau spectrum (i.e. snake states). The existence of these new states leads to an interesting modification of the bend and Hall resistances, with new quantizing plateaus appearing in close proximity of the Landau levels. The electron guiding in this system can be understood by studying the current density profiles of the incoming and outgoing modes. From the fact that guided electrons fully transmit without any backscattering (similarly to edge states), we are able to analytically predict the values of the quantized resistances, and they match the resistance data we obtain with our numerical (tight-binding) method. These insights in the electron guiding will be useful in predicting the resistances for other side-gate configurations, and possibly in other system geometries, as long as there is no backscattering of the guided states. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000401101400005 |
Publication Date |
2017-04-02 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.554 |
Times cited |
|
Open Access |
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|
Notes |
; This work was supported by the Methusalem programme of the Flemish government. One of us (F. M. Peeters) acknowledges correspondence with K. Novoselov. ; |
Approved |
Most recent IF: 1.554 |
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Call Number |
UA @ lucian @ c:irua:143761 |
Serial |
4604 |
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Permanent link to this record |
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Author |
Masir, M.R.; Moldovan, D.; Peeters, F.M. |
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Title |
Pseudo magnetic field in strained graphene : revisited |
Type |
A1 Journal article |
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Year |
2013 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
175 |
Issue |
|
Pages |
76-82 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We revisit the theory of the pseudo magnetic field as induced by strain in graphene using the tight- binding approach. A systematic expansion of the hopping parameter and the deformation of the lattice vectors is presented from which we obtain an expression for the pseudo magnetic field for low energy electrons. We generalize and discuss previous results and propose a novel effective Hamiltonian. The contributions of the different terms to the pseudo field expression are investigated for a model triaxial strain profile and are compared with the full solution. Our work suggests that the previous proposed pseudo magnetic field expression is valid up to reasonably high strain (15%) and there is no K-dependent pseudo-magnetic field. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000329538200010 |
Publication Date |
2013-04-06 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.554 |
Times cited |
57 |
Open Access |
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Notes |
This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EURO- CORES Program EuroGRAPHENE within the project CONGRAN and the Methusalem programme of the Flemish government. |
Approved |
Most recent IF: 1.554; 2013 IF: 1.698 |
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Call Number |
UA @ lucian @ c:irua:114805 |
Serial |
2737 |
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Permanent link to this record |
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Author |
Brosens, F.; Magnus, W. |
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Title |
Newtonian trajectories : a powerful tool for solving quantum dynamics |
Type |
A1 Journal article |
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Year |
2010 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
150 |
Issue |
43/44 |
Pages |
2102-2105 |
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Keywords |
A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT) |
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Abstract |
Since Ehrenfests theorem, the role and importance of classical paths in quantum dynamics have been examined by several means. Along this line, we show that the classical equations of motion provide a solution to quantum dynamics, if appropriately incorporated into the Wigner distribution function, exactly reformulated in a type of Boltzmann equation. Also the quantum-mechanical features of the canonical ensemble can be studied in this framework of Newtonian dynamics, if the initial distribution function is appropriately constructed from the statistical operator. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000284251700006 |
Publication Date |
2010-09-20 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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|
Impact Factor |
1.554 |
Times cited |
7 |
Open Access |
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Notes |
; The authors thank J.T. Devreese and J. Tempere for interesting and helpful discussions, and, in particular, L.F. Lemmens for several valuable suggestions. One of the authors (F.B.) acknowledges the FWO projects G.0115.06 and G.0365.08 as well as the WOG project WO.033.09N, for financial support. ; |
Approved |
Most recent IF: 1.554; 2010 IF: 1.981 |
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Call Number |
UA @ lucian @ c:irua:85795 |
Serial |
2338 |
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Permanent link to this record |
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Author |
Krstajić, P.M.; Peeters, F.M.; Helm, M. |
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Title |
Landau levels and magnetopolaron effect in dilute GaAs:N |
Type |
A1 Journal article |
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Year |
2010 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
150 |
Issue |
33/34 |
Pages |
1575-1579 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological band anticrossing model (BAC) which we extended in order to include the magnetic field and electronphonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron energy ħωc. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000280949900019 |
Publication Date |
2010-06-05 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.554 |
Times cited |
|
Open Access |
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Notes |
; This work is supported by the Flemish Science Foundation (FWO-VI), and the Interuniversity Attraction Poles Program (IAP)-Belgian State Science Policy. M.H. is grateful to O. Drachenko and H. Schneider for numerous discussions. ; |
Approved |
Most recent IF: 1.554; 2010 IF: 1.981 |
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Call Number |
UA @ lucian @ c:irua:84580 |
Serial |
1771 |
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Permanent link to this record |
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Author |
Papp, G.; Peeters, F.M. |
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Title |
Magneto-ballistic transport through micro-structured junctions on a curved two-dimensional electron gas |
Type |
A1 Journal article |
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Year |
2009 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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|
Volume |
149 |
Issue |
19/20 |
Pages |
778-780 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We investigate theoretically the ballistic transport in a two-dimensional electron gas, which is rolled up as a tube and is micro-structured into a Hall bar. A uniform magnetic field applied to such a curved surface results in a non-uniform perpendicular magnetic field. The bend resistances become asymmetric with respect to the orientation of the magnetic field due to the varying magnetic field along the junction. The resistance asymmetry is strongly affected by corrugation due to the varying mobility along different crystallographic directions. We compare our results with a recent transport measurement. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000266149900011 |
Publication Date |
2009-03-07 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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|
Impact Factor |
1.554 |
Times cited |
1 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.554; 2009 IF: 1.837 |
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Call Number |
UA @ lucian @ c:irua:77580 |
Serial |
1897 |
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Permanent link to this record |
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Author |
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
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Title |
Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics |
Type |
A1 Journal article |
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Year |
2008 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
147 |
Issue |
1/2 |
Pages |
31-35 |
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Keywords |
A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000257220400009 |
Publication Date |
2008-04-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.554 |
Times cited |
8 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.554; 2008 IF: 1.557 |
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Call Number |
UA @ lucian @ c:irua:69748 |
Serial |
2794 |
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Permanent link to this record |
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Author |
Krstajić, P.; Peeters, F.M. |
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Title |
Influence of strain on the tunneling magnetoresistance in diluted magnetic semiconductor trilayer and double barrier structures |
Type |
A1 Journal article |
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Year |
2007 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
141 |
Issue |
6 |
Pages |
320-324 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000244006000004 |
Publication Date |
2006-11-30 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.554 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 1.554; 2007 IF: 1.535 |
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Call Number |
UA @ lucian @ c:irua:63747 |
Serial |
1637 |
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Permanent link to this record |
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Author |
Shanenko, A.A.; Tempère, J.; Brosens, F.; Devreese, J.T. |
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Title |
Mesoscopic samples: the superconducting condensate via the Gross.Pitaevskii scenario |
Type |
A1 Journal article |
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Year |
2004 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
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Volume |
131 |
Issue |
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Pages |
409-414 |
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Keywords |
A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000223011700012 |
Publication Date |
2004-03-20 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.554 |
Times cited |
1 |
Open Access |
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Notes |
|
Approved |
Most recent IF: 1.554; 2004 IF: 1.523 |
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Call Number |
UA @ lucian @ c:irua:48282 |
Serial |
2000 |
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Permanent link to this record |
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Author |
Čukarić, N.; Tadić, M.; Peeters, F.M. |
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Title |
Electron and hole states in a quantum ring grown by droplet epitaxy. Influence of the layer inside the ring opening |
Type |
A1 Journal article |
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Year |
2010 |
Publication |
Superlattices and microstructures |
Abbreviated Journal |
Superlattice Microst |
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Volume |
48 |
Issue |
5 |
Pages |
491-501 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The electronic structure of the conduction and valence bands of a quantum ring containing a layer inside the ring opening is modeled This structure (nanocup) consists of a GaAs nanodisk (the cup s bottom) and a GaAs nanoring (the cup s rim) which encircles the disk The whole system is embedded in an (Al Ga)As matrix and its shape resembles realistic ring structures grown by the droplet epitaxy technique The conduction-band states in the structure are modeled by the single-band effective-mass theory while the 4-band Luttinger-Kohn model is adopted to compute the valence-band states We analyze how the electronic structure of the nanocup evolves from the one of a quantum ring when the size of either the nanodisk or the nanoring is changed For that purpose (1) the width of the ring (2) the disk radius and (3) the disk height are separately varied For dimensions typical for experimentally realized structures we find that the electron wavefunctions are mainly localized inside the ring even when the thickness of the Inner layer is 90% of the ring thickness These calculations indicate that topological phenomena like the excitonic Aharonov-Bohm effect are negligibly affected by the presence of the layer inside the ring (C) 2010 Elsevier Ltd All rights reserved |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000284521400005 |
Publication Date |
2010-09-22 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0749-6036; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.123 |
Times cited |
9 |
Open Access |
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Notes |
; The authors would like to thank Prof B Partoens for useful discussions This work was supported by the EU NoE SANDiE the Ministry of Science of Serbia the Flemish Science Foundation (FWO-VI) and the Belgian Science Policy (IAP) ; |
Approved |
Most recent IF: 2.123; 2010 IF: 1.096 |
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Call Number |
UA @ lucian @ c:irua:95551 |
Serial |
906 |
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Permanent link to this record |