|
|
“Synthesis and charactreization of the new Ln(2)FeMoO(7) (Ln = Y, Dy, Ho) compounds”. Veith GM, Lobanov MV, Emge TJ, Greenblatt M, Croft M, Stowasser F, Hadermann J, Van Tendeloo G, Journal of materials chemistry 14, 1623 (2004). http://doi.org/10.1039/b315028c
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 17
DOI: 10.1039/b315028c
|
|
|
|
“Approaches to calculation of exciton interaction energies for a molecular dimer”. Howard IA, Zutterman F, Deroover G, Lamoen D, van Alsenoy C, Journal Of Physical Chemistry B 108, 19155 (2004). http://doi.org/10.1021/jp040417h
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 3.177
Times cited: 35
DOI: 10.1021/jp040417h
|
|
|
|
“Exciton states and oscillator strength in two vertically coupled InP/InGaP quantum discs”. Tadić, M, Peeters FM, Journal of physics : condensed matter 16, 8633 (2004). http://doi.org/10.1088/0953-8984/16/47/015
Abstract: Quantum mechanical coupling and strain in two vertically arranged InP/InGaP quantum dots is studied as a function of the size of the dots and the spacer thickness. The strain distribution is determined by the continuum mechanical model, while the single-band effective-mass equation and the multiband k (.) p theory are employed to compute the conduction and valence band energy levels, respectively. The exciton states are obtained from an exact diagonalization approach, and we also compute the oscillator strength for recombination. We found that the light holes are confined by strain to the spacer, which is the reason that the hole states exhibit coupling at much larger distances as compared with the electrons. At small d, the doublet structure of the hole energy levels arises as a consequence of the relocation of the light hole from the matrix to the regions located-outside the stack, close to the dot-matrix interface. When d varies, the exciton ground state exhibits numerous anticrossings with other states, which are related to the changing spatial localization of the hole as a function of d. The oscillator strength of the exciton recombination is strongly reduced in a certain range of spacer thicknesses, which effectively turns a bright exciton state into a dark one. This effect is associated with anticrossings between exciton energy levels.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 13
DOI: 10.1088/0953-8984/16/47/015
|
|
|
|
“Giant magnetoresistance in a two-dimensional electron gas modulated by magnetic barriers”. Papp G, Peeters FM, Journal of physics : condensed matter 16, 8275 (2004). http://doi.org/10.1088/0953-8984/16/46/014
Abstract: The temperature-dependent giant magnetoresistance effect is investigated in a magnetically modulated two-dimensional electron gas, which can be realized by depositing two parallel ferromagnets on the top and bottom of a heterostructure. The effective potential for electrons arising for parallel magnetization allows the electrons to resonantly tunnel through the magnetic barriers, while this is excluded in the anti-parallel situation. Such a discrepancy results in a giant magnetoresistance ratio (MRR), which can be up to 10(31)%. The MRR shows a strong dependence on temperature, but our study indicates that for realistic parameters for a GaAs heterostructure the effect can be as high as 10(4)% at 4 K.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 69
DOI: 10.1088/0953-8984/16/46/014
|
|
|
|
“Crystal structure and properties of the new vanadyl(IV)phosphates Na2MVO(PO4)2 M=Ca and Sr”. Chernaya VV, Tsirlin AA, Shpanchenko RV, Antipov EV, Gippius AA, Morozova EN, Dyakov V, Hadermann J, Kaul EE, Geibel C, Journal of solid state chemistry 177, 2875 (2004). http://doi.org/10.1016/j.jssc.2004.04.035
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 6
DOI: 10.1016/j.jssc.2004.04.035
|
|
|
|
“The structural investigation of Ba4Bi3F17”. Dombrovski EN, Serov TV, Abakumov AM, Ardashnikova EI, Dolgikh VA, Van Tendeloo G, Journal of solid state chemistry 177, 312 (2004). http://doi.org/10.1016/j.jssc.2003.08.022
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 9
DOI: 10.1016/j.jssc.2003.08.022
|
|
|
|
“Synthesis and crystal structure of the novel Pb5Sb2MnO11 compound”. Abakumov AM, Rozova MG, Chizhov PS, Antipov EV, Hadermann J, Van Tendeloo G, Journal of solid state chemistry 177, 2855 (2004). http://doi.org/10.1016/j.jssc.2004.04.047
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 3
DOI: 10.1016/j.jssc.2004.04.047
|
|
|
|
“Synthesis and crystal structure of the Sr2MnGa(O,F)6 oxyfluorides”. Alekseeva AM, Abakumov AM, Rozova MG, Antipov EV, Hadermann J, Journal of solid state chemistry 177, 731 (2004). http://doi.org/10.1016/j.jssc.2003.09.002
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 23
DOI: 10.1016/j.jssc.2003.09.002
|
|
|
|
“Synthesis, crystal structure, and magnetic properties of new layered hexagonal perovskite Ba8Ta4Ru8/3Co2/3O24”. Kopnin EM, Belik AA, Shpanchenko RV, Antipov EV, Izumi F, Takayama-Muromachi E, Hadermann J, Journal of solid state chemistry 177, 3499 (2004). http://doi.org/10.1016/j.jssc.2004.04.032
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 1
DOI: 10.1016/j.jssc.2004.04.032
|
|
|
|
“SrMn3O6: an incommensurate modulated tunnel structure”. Gillie LJ, Hadermann J, Pérez O, Martin C, Hervieu M, Suard E, Journal of solid state chemistry 177, 3383 (2004). http://doi.org/10.1016/j.jssc.2004.05.057
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 19
DOI: 10.1016/j.jssc.2004.05.057
|
|
|
|
“Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy”. de Gryse O, Clauws P, Vanhellemont J, Lebedev OI, van Landuyt J, Simoen E, Claeys C, Journal of the electrochemical society 151, G598 (2004). http://doi.org/10.1149/1.1776592
Abstract: Infrared absorption spectra of oxygen precipitates in boron-doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function representation of composite materials. The aspect ratio of the platelet precipitates is determined by transmission electron microscopy measurements. The analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOγ precipitates are formed with the same composition as in the lightly doped case. In the heavily boron-doped (>10(18) cm(-3)) samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3, with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. (C) 2004 The Electrochemical Society.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.259
Times cited: 13
DOI: 10.1149/1.1776592
|
|
|
|
“A case study of high-temperature corrosion in rotary cement kilns”. Potgieter JH, Godoi RHM, Van Grieken R, Journal of the South African Institute of Mining and Metallurgy 104, 603 (2004)
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
|
|
|
|
“Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications”. Lubyshev D, Fastenau JM, Fang X-M, Wu Y, Doss C, Snyder A, Liu WK, Lamb MSM, Bals S, Song C, Journal of vacuum science &, technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena 22, 1565 (2004). http://doi.org/10.1116/1.1691412
Abstract: Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 25
DOI: 10.1116/1.1691412
|
|
|
|
“Modeling of the target surface modification by reactive ion implantation during magnetron sputtering”. Depla D, Chen ZY, Bogaerts A, Ignatova V, de Gryse R, Gijbels R, Journal of vacuum science and technology: A: vacuum surfaces and films 22, 1524 (2004). http://doi.org/10.1116/1.1705641
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.374
Times cited: 13
DOI: 10.1116/1.1705641
|
|
|
|
“High precision determination of the elastic strain of InGaN/GaN multiple quantum wells”. Wu MF, Zhou S, Yao S, Zhao Q, Vantomme A, van Daele B, Piscopiello E, Van Tendeloo G, Tong YZ, Yang ZJ, Yu TJ, Zhang GY, Journal of vacuum science and technology: B: microelectronics and nanometer structures 22, 920 (2004). http://doi.org/10.1116/1.1715085
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1116/1.1715085
|
|
|
|
“High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers”. Germain M, Leys M, Boeykens S, Degroote S, Wang W, Schreurs D, Ruythooren W, Choi K-H, van Daele B, Van Tendeloo G, Borghs G, Materials Research Society symposium proceedings 798, Y10.22 (2004)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
|
|
|
|
“Applications of advanced transmission electron microscopic techniques to Ni-Ti based shape memory materials”. Schryvers D, Potapov P, Santamarta R, Tirry W, Materials science and engineering: part A: structural materials: properties, microstructure and processing 378, 11 (2004). http://doi.org/10.1016/j.msea.2003.10.325
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 6
DOI: 10.1016/j.msea.2003.10.325
|
|
|
|
“High resolution TEM study of Ni4Ti3 precipitates in austenitic Ni51Ti49”. Tirry W, Schryvers D, Materials science and engineering: part A: structural materials: properties, microstructure and processing 378, 157 (2004). http://doi.org/10.1016/j.msea.2003.10.336
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 19
DOI: 10.1016/j.msea.2003.10.336
|
|
|
|
“Structure of multi-grain spherical particles in an amorphous Ti50Ni25Cu25 melt-spun ribbon”. Santamarta R, Schryvers D, Materials science and engineering: part A: structural materials: properties, microstructure and processing 378, 143 (2004). http://doi.org/10.1016/j.msea.2003.11.060
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 5
DOI: 10.1016/j.msea.2003.11.060
|
|
|
|
“One-step synthesis of shelled PbS nanoparticles in a layered double hydroxide matrix”. Lukashin AV, Eliseev AA, Zhuravleva NG, Vertegel AA, Tretyakov YD, Lebedev OI, Van Tendeloo G, Mendeleev communications , 174 (2004). http://doi.org/10.1070/MC2004v014n04ABEH001973
Abstract: The one-step preparation of capped PbS nanoparticles in an inorganic matrix via UV-induced decomposition of lead thiosulfate complexes intercalated into a hydrotalcite-type layered double hydroxide is reported.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.741
Times cited: 9
DOI: 10.1070/MC2004v014n04ABEH001973
|
|
|
|
“Characterisation of sugar cane combustion particles in the Araraquara region, Southeast Brazil”. Godoi RHM, Godoi AFL, Worobiec A, Andrade SJ, de Hoog J, Santiago-Silva MR, Van Grieken R, Microchimica acta 145, 53 (2004). http://doi.org/10.1007/S00604-003-0126-X
Keywords: A1 Journal article; Laboratory Experimental Medicine and Pediatrics (LEMP); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1007/S00604-003-0126-X
|
|
|
|
“Chemical characterization of airborne particles in St. Martinus Cathedral in Weert, The Netherlands”. Spolnik Z, Worobiec A, Injuk J, Neilen D, Schellen H, Van Grieken R, Microchimica acta 145, 223 (2004). http://doi.org/10.1007/S00604-003-0158-2
Keywords: A1 Journal article; Laboratory Experimental Medicine and Pediatrics (LEMP); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1007/S00604-003-0158-2
|
|
|
|
“How to optimize the experimental design of quantitative atomic resolution TEM experiments?”.Van Aert S, den Dekker AJ, van Dyck D, Micron 35, 425 (2004). http://doi.org/10.1016/j.micron.2004.01.007
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.98
Times cited: 14
DOI: 10.1016/j.micron.2004.01.007
|
|
|
|
“Physical limits on atomic resolution”. van Dyck D, Van Aert S, den Dekker AJ, Microscopy and microanalysis 10, 153 (2004). http://doi.org/10.1017/S143192760404036X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.891
Times cited: 14
DOI: 10.1017/S143192760404036X
|
|
|
|
“Probing local stoichiometry in InGaN based quantum wells of solid-state LEDs”. Jinschek JR, Bals S, Gopal V, Xus X, Kisielowski C, Microscopy and microanalysis 10, 294 (2004). http://doi.org/10.1017/S1431927604882813
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.891
DOI: 10.1017/S1431927604882813
|
|
|
|
“TEM annular objective apertures fabricated by FIB”. Bals S, Radmilovic V, Kisielowski C, Microscopy and microanalysis 10, 1148 (2004). http://doi.org/10.1017/S1431927604881765
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.891
DOI: 10.1017/S1431927604881765
|
|
|
|
“A compact μ-XRF spectrometer for (in-situ) analyses of cultural heritage and forensic materials”. Vittiglio G, Bichlmeier S, Klinger P, Heckel J, Fuzhong W, Vincze L, Janssens K, Engström P, Rindby A, Dietrich K, Jembrih-Simbürger D, Schreiner M, Denis D, Lakdar A, Lamotte A, Nuclear instruments and methods in physics research B 213, 693 (2004)
Keywords: A3 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
|
|
|
|
“Spread of façon-de-Venise glassmaking through central and western Europe”. Åmit Å, Janssens K, Schalm O, Kos M, Nuclear instruments and methods in physics research B 213, 717 (2004). http://doi.org/10.1016/S0168-583X903)01691-4
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1016/S0168-583X903)01691-4
|
|
|
|
“Confocal μ-XRF depth analysis of paint layers”. Šmit Ž, Janssens K, Proost K, Langus I, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms 219, 35 (2004). http://doi.org/10.1016/J.NIMB.2004.01.024
Abstract: Focused narrow-band beam of the synchrotron radiation was used for in-depth analysis of historic and modern paint layers. The fluorescent radiation induced by 21 keV impact radiation was detected by a Si(Li) detector equipped with a polycapillary X-ray lens in con-focal geometry. Scanning of the sample was performed by a motorized xyz stage. Space resolution of 30 ìm was achieved. The procedure of evaluation of concentrations was based on the independent parameter method and included absorption of radiation in the outer layers and secondary fluorescence enhancement induced by hard X-rays of the same and neighboring layers.
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 1.109
Times cited: 69
DOI: 10.1016/J.NIMB.2004.01.024
|
|
|
|
“Determination of localized Fe2+/Fe3+ ratios in inks of historic documents by means of \mu-XANES”. Proost K, Janssens K, Wagner B, Bulska E, Schreiner M, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms 213, 723 (2004). http://doi.org/10.1016/S0168-583X(03)01693-8
Abstract: An important part of the European cultural heritage is composed of hand-written documents. Many of these documents were drawn up with iron-gall ink. This type of ink present a serious conservation problem, as it slowly oxidizes ('burns') the paper it is written on, thereby gradually disintegrating the historic document. Acid hydrolysis of the cellulose and/or the oxidation of organic compounds promoted by radical intermediates that are formed due to the presence of Fe2+ ions are considered to be the cause of the disintegration. mu-XANES measurements were performed with a lateral resolution of 30-50 mum in order to determine the local Fe2+/Fe3+ ratio in 19th C. documents from the Austrian National Archives and fragments of 16th C documents from the Polish National Library. In the 19th C documents, no significant amount of Fe2+ was detected. On the other hand, in the 16th C fragments, significant amounts of Fe2+ and appreciable differences in distribution of Fe2+ and Fe3+ within individual letters/ink stains were observed. (C) 2003 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 1.109
DOI: 10.1016/S0168-583X(03)01693-8
|
|
