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	Author	Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H.
	Title	Microstructural characterization of diamond films deposited on c-BN crystals			Type	A1 Journal article
	Year	2000	Publication	Diamond and related materials T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC	Abbreviated Journal	Diam Relat Mater
	Volume	9	Issue	3-6	Pages	269-273
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000087382400009	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0925-9635;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.561	Times cited	9	Open Access
	Notes				Approved	Most recent IF: 2.561; 2000 IF: 1.591
	Call Number	UA @ lucian @ c:irua:102877			Serial	2041
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	Author	Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I.
	Title	Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer			Type	A1 Journal article
	Year	2000	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	77	Issue	4	Pages	507-509
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X].
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000088225400016	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	44	Open Access
	Notes				Approved	Most recent IF: 3.411; 2000 IF: 3.906
	Call Number	UA @ lucian @ c:irua:103448			Serial	712
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	Author	Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L.
	Title	Interaction of a Ti-capped Co thin film with Si₃N₄			Type	A1 Journal article
	Year	2000	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	77	Issue	26	Pages	4307-4309
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7].
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000166120500021	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	3	Open Access
	Notes				Approved	Most recent IF: 3.411; 2000 IF: 3.906
	Call Number	UA @ lucian @ c:irua:104225			Serial	1683
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	Author	Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J.
	Title	Structural characterization of Nb-TiO₂ nanosized thick-films for gas sensing application			Type	P1 Proceeding
	Year	2000	Publication	Sensors and actuators : B : chemical	Abbreviated Journal	Sensor Actuat B-Chem
	Volume	68	Issue	1-3	Pages	140-145
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT); Vision lab
	Abstract	Pure and Nb-doped TiO2 thick-films were prepared by screen-printing, starting from nanosized powders. Grain growth and crystalline phase modification occurred as consequence of firing at high temperature. It has been shown that niobium addition inhibits grain coarsening and hinders anatase-to-rutile phase transition. These semiconducting films exhibited n-type behavior, while Nb acted as donor-dopant. Gas measurements demonstrated that the films are suitable for CO or NO2 sensing. Microstructural characterization by electron microscopy and differential thermal analysis (DTA) highlights the dependence of gas-sensing behavior on film's properties. (C) 2000 Elsevier Science S.A. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Lausanne	Editor
	Language		Wos	000089218000022	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0925-4005;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	5.401	Times cited	51	Open Access
	Notes				Approved	Most recent IF: 5.401; 2000 IF: 1.470
	Call Number	UA @ lucian @ c:irua:95167			Serial	3223
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	Author	Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al.
	Title	Comparative study of structural properties and photoluminescence in InGaN layers with a high In content			Type	A1 Journal article
	Year	2000	Publication	Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS	Abbreviated Journal	Mrs Internet J N S R
	Volume	5	Issue	s:[1]	Pages	art. no.-W11.38
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
	Address
	Corporate Author				Thesis
	Publisher	Materials research society	Place of Publication	Warrendale	Editor
	Language		Wos	000090103600097	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1092-5783	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:103471			Serial	423
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	Author	Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B.
	Title	Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study			Type	P1 Proceeding
	Year	2000	Publication		Abbreviated Journal
	Volume		Issue		Pages	38-43
	Keywords	P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Defects in AgG tabular crystals with {111} surfaces are characterised by transmission electron microscopy (TEM) and their influence on the growth process is discussed. In the tabular crystals, twins parallel to the tabular face as well as dislocations along different directions are observed. The twins induce the tabular growth, while the dislocations do not influence the morphology. In 10 to 30% of the crystals that have been characterised, thickness growth is observed and it is shown that in all cases twins on other planes than the tabular ones are present. Two configurations occur more frequently and are analysed in detail. For the first group, twins parallel to the tabular face as well as a microtwin along a non-parallel {111} plane and ending inside the crystal are present. In the crystals of the second group only one extra non-parallel twin occurs giving rise to a bicrystal built up by a tetrahedral shaped part and a flat triangular or trapezoidal part. More complex twin configurations give rise to various, less characteristic morphologies.
	Address
	Corporate Author				Thesis
	Publisher	Soc imaging science technology	Place of Publication	Springfield	Editor
	Language		Wos	000183315900012	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0-89208-229-1	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:95777			Serial	617
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	Author	Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C.
	Title	The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals			Type	P1 Proceeding
	Year	2000	Publication		Abbreviated Journal
	Volume		Issue		Pages	167-171
	Keywords	P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Multishell tabular grains have a higher speed than pure AgBr tabular grains. Usually the shells differ in size and iodide content, but also the precipitation method for the iodide containing shells has an influence on the iodide incorporation. A TEM investigation was performed to determine the defect structure of multishell AgBr (111) tabular crystals containing a shell with a low iodide concentration and one with a high iodide concentration. The twins that induce tabular growth and stacking fault contrast in the region of the iodide shells have been observed, similar to previously studied AgBr/Ag(Br,I) coreshell crystals. Moreover in some of the crystals dislocations have been observed, sometimes even an entire network. The number of dislocations formed varies for the different methods of iodide addition. Also variations in average thickness between the different iodide addition methods have been observed. A higher number of dislocations and thicker crystals point towards a higher local concentration of iodide. These observations allow deciding which iodide incorporation method is most useful for a preferred dislocation pattern.
	Address
	Corporate Author				Thesis
	Publisher	Soc Imaging Science Technology	Place of Publication	Springfield	Editor
	Language		Wos	000183315900046	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0-89208-229-1	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:95774			Serial	3587
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	Author	Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al.
	Title	Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization			Type	A1 Journal article
	Year	2000	Publication	Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA	Abbreviated Journal	Mater Sci Forum
	Volume	338-3	Issue		Pages	309-312
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
	Address
	Corporate Author				Thesis
	Publisher	Trans tech publications ltd	Place of Publication	Zurich-uetikon	Editor
	Language		Wos	000165996700075	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0255-5476	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	2	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:104262			Serial	1071
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	Author	Nistor, L.; van Landuyt, J.; Ralchenko, V.
	Title	Structural aspects of CVD idamond wafers grown at different hydrogen flow rates			Type	A1 Journal article
	Year	1999	Publication	Physica status solidi: A: applied research	Abbreviated Journal	Phys Status Solidi A
	Volume	171	Issue		Pages	5-10
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Berlin	Editor
	Language		Wos	000081733800007	Publication Date	2002-09-10
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0031-8965;1521-396X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	15	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29688			Serial	3207
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	Author	Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
	Title	Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM			Type	A1 Journal article
	Year	1999	Publication	Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland	Abbreviated Journal	Phys Status Solidi A
	Volume	171	Issue	1	Pages	147-157
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
	Address
	Corporate Author				Thesis
	Publisher	Wiley	Place of Publication	Berlin	Editor
	Language		Wos	000078539700020	Publication Date	2002-09-10
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0031-8965;1521-396X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	40	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:95798			Serial	1152
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	Author	Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A.
	Title	Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition			Type	A1 Journal article
	Year	1999	Publication	Journal of vacuum science and technology: A: vacuum surfaces and films	Abbreviated Journal	J Vac Sci Technol A
	Volume	17	Issue	1	Pages	249-255
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000078136300038	Publication Date	2002-07-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0734-2101;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.374	Times cited	8	Open Access
	Notes				Approved	Most recent IF: 1.374; 1999 IF: 1.742
	Call Number	UA @ lucian @ c:irua:29689			Serial	581
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	Author	de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J.
	Title	Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon			Type	A1 Journal article
	Year	1999	Publication	The review of scientific instruments	Abbreviated Journal	Rev Sci Instrum
	Volume	70	Issue	9	Pages	3661-3663
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6].
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000082289200026	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0034-6748;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.515	Times cited	5	Open Access
	Notes				Approved	Most recent IF: 1.515; 1999 IF: 1.293
	Call Number	UA @ lucian @ c:irua:103487			Serial	48
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	Author	Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M.
	Title	Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays			Type	A1 Journal article
	Year	1999	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	75	Issue	19	Pages	2912-2914
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000083483900014	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	481	Open Access
	Notes				Approved	Most recent IF: 3.411; 1999 IF: 4.184
	Call Number	UA @ lucian @ c:irua:29643			Serial	1484
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	Author	Ahenach, J.; Cool, P.; Vansant, E.F.; Lebedev, O.; van Landuyt, J.
	Title	Influence of water on the pillaring of montmorillonite with aminopropyltriethoxysilane			Type	A1 Journal article
	Year	1999	Publication	Physical chemistry, chemical physics	Abbreviated Journal	Phys Chem Chem Phys
	Volume	1	Issue		Pages	3703-3708
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Cambridge	Editor
	Language		Wos	000081765300046	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1463-9076;1463-9084;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	4.123	Times cited	10	Open Access
	Notes				Approved	Most recent IF: 4.123; 1999 IF: NA
	Call Number	UA @ lucian @ c:irua:28250			Serial	1660
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	Author	Rembeza, E.S.; Richard, O.; van Landuyt, J.
	Title	Influence of laser and isothermal treatments on microstructural properties of SnO₂ films			Type	A1 Journal article
	Year	1999	Publication	Materials research bulletin	Abbreviated Journal	Mater Res Bull
	Volume	34	Issue	10/11	Pages	1527-1533
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000084625300006	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0025-5408;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.446	Times cited	17	Open Access
	Notes				Approved	Most recent IF: 2.446; 1999 IF: 0.840
	Call Number	UA @ lucian @ c:irua:29691			Serial	1626
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	Author	Nistor, L.; Nistor, S.V.; Dincã, G.; van Landuyt, J.; Schoemaker, D.; Copaciu, V.; Georgeoni, P.; Arnici, N.
	Title	High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis			Type	A1 Journal article
	Year	1999	Publication	Diamonds an related materials	Abbreviated Journal	Diam Relat Mater
	Volume	8	Issue		Pages	738-742
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000080437000123	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0925-9635;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.561	Times cited	7	Open Access
	Notes				Approved	Most recent IF: 2.561; 1999 IF: 1.924
	Call Number	UA @ lucian @ c:irua:27519			Serial	1445
Permanent link to this record



	Author	De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J.
	Title	Accurate infrared absorption measurement of interstitial and precipitated oxygen in p⁺ silicon wafers			Type	A1 Journal article
	Year	1999	Publication	Microelectronic engineering	Abbreviated Journal	Microelectron Eng
	Volume	45	Issue	2-3	Pages	277-282
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000081748600023	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0167-9317;	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor	1.806	Times cited		Open Access
	Notes	Fwo-G.0051.97; Fwo-G.00117.86			Approved	Most recent IF: 1.806; 1999 IF: 0.815
	Call Number	UA @ lucian @ c:irua:95791			Serial	47
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	Author	Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G.
	Title	Morphology and defects in shallow trench isolation structures			Type	A1 Journal article
	Year	1999	Publication	Conference series of the Institute of Physics	Abbreviated Journal
	Volume	164	Issue		Pages	443-446
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	000166835300094	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0305-2346	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	1	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29690			Serial	2206
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	Author	Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
	Title	Clustering of vacancies on {113} planes in Si layers close to Si-Si₃N₄ interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation			Type	A1 Journal article
	Year	1999	Publication	Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND	Abbreviated Journal	Inst Phys Conf Ser
	Volume		Issue	164	Pages	495-498
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000166835300106	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0-7503-0650-5; 0951-3248	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:102918			Serial	376
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	Author	Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
	Title	Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM			Type	A1 Journal article
	Year	1999	Publication	Physica status solidi: A: applied research	Abbreviated Journal	Phys Status Solidi A
	Volume	171	Issue	1	Pages	147-157
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Berlin	Editor
	Language		Wos	000078539700020	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0031-8965	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	40	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29687			Serial	1153
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	Author	Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Pervov, V.S.; Makhonina, E.V.
	Title	Electron microscopic and X-ray structural analysis of the layered crystals TaReSe4: structure, defect structure, and microstructure, including rotation twins			Type	A1 Journal article
	Year	1998	Publication	Journal of solid state chemistry	Abbreviated Journal	J Solid State Chem
	Volume	135	Issue		Pages	235-255
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	000072900200008	Publication Date	2002-10-07
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-4596;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.299	Times cited	3	Open Access
	Notes				Approved	Most recent IF: 2.299; 1998 IF: 1.432
	Call Number	UA @ lucian @ c:irua:29672			Serial	938
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	Author	Takeda, M.; Suzuki, N.; Shinohara, G.; Endo, T.; van Landuyt, J.
	Title	TEM study on precipitation behavior in Cu-Co alloys			Type	A1 Journal article
	Year	1998	Publication	Physica status solidi: A: applied research	Abbreviated Journal	Phys Status Solidi A
	Volume	168	Issue		Pages	27-35
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Berlin	Editor
	Language		Wos	000075226500005	Publication Date	2002-09-10
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0031-8965;1521-396X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	18	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29677			Serial	3494
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	Author	Goessens, C.; Schryvers, D.; van Landuyt, J.
	Title	Transmission electron microscopy studies of (111) twinned silver halide microcrystals			Type	A1 Journal article
	Year	1998	Publication	Microscopy research and technique	Abbreviated Journal	Microsc Res Techniq
	Volume	42	Issue		Pages	85-99
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000075521300003	Publication Date	2002-08-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1059-910X;1097-0029;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.147	Times cited	8	Open Access
	Notes				Approved	Most recent IF: 1.147; 1998 IF: 0.765
	Call Number	UA @ lucian @ c:irua:29676			Serial	3713
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	Author	Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B.
	Title	High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial Si_xGe_1-x alloys produced through laser induced processing			Type	A1 Journal article
	Year	1998	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	72	Issue	22	Pages	2877-2879
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000075273700034	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	16	Open Access
	Notes				Approved	Most recent IF: 3.411; 1998 IF: 3.349
	Call Number	UA @ lucian @ c:irua:29684			Serial	1447
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	Author	van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R.
	Title	Defects and growth mechanisms of AgCl(100) tabular crystals			Type	A1 Journal article
	Year	1998	Publication	Journal of crystal growth	Abbreviated Journal	J Cryst Growth
	Volume	187	Issue		Pages	410-420
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000073710800014	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-0248;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.751	Times cited	8	Open Access
	Notes				Approved	Most recent IF: 1.751; 1998 IF: 1.307
	Call Number	UA @ lucian @ c:irua:29675			Serial	625
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	Author	van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.
	Title	Defect related growth of tabular AgCl(100) crystals: a TEM study			Type	P1 Proceeding
	Year	1998	Publication		Abbreviated Journal
	Volume		Issue		Pages	389-390
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Cancun	Editor
	Language		Wos	000077019900191	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29678			Serial	618
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	Author	van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R.
	Title	Defects in AgCl and AgBr(100) tabular crystals studied by TEM			Type	P3 Proceeding
	Year	1998	Publication		Abbreviated Journal
	Volume		Issue		Pages	6-11
	Keywords	P3 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Antwerpen	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29680			Serial	628
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	Author	van Landuyt, J.; Van Tendeloo, G.
	Title	Charcaterization by high-resolution transmission electron microscopy			Type	H3 Book chapter
	Year	1998	Publication		Abbreviated Journal
	Volume		Issue		Pages	187-190
	Keywords	H3 Book chapter; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Stt	Place of Publication	Den Haag	Editor
	Language		Wos	A1990DC39700012	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29685			Serial	335
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	Author	van Landuyt, J.; Van Tendeloo, G.
	Title	HREM for characterisation of nanoscale microstructures			Type	P3 Proceeding
	Year	1998	Publication		Abbreviated Journal
	Volume		Issue		Pages	15-18
	Keywords	P3 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Kyoto	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:25687			Serial	1499
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	Author	van Landuyt, J.
	Title	Een tempel voor elektronenmicroscopie “kijken naar atomen”			Type	A3 Journal article
	Year	1998	Publication	Fonds informatief	Abbreviated Journal
	Volume	38	Issue		Pages	13-17
	Keywords	A3 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Antwerpen	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0776-8133	ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29673			Serial	3495
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