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Author Schowalter, M.; Rosenauer, A.; Titantah, J.T.; Lamoen, D. doi  openurl
  Title Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure Type A1 Journal article
  Year (down) 2009 Publication Acta crystallographica: section A: foundations of crystallography Abbreviated Journal Acta Crystallogr A  
  Volume 65 Issue Pages 227-231  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We computed Debye-Waller factors in the temperature range from 0.1 to 1000 K for AlN, GaN, InN, ZnO and CdO with the wurtzite-type structure. The Debye-Waller factors were derived from phonon densities of states obtained from Hellmann-Feynman forces computed within the density-functional-theory formalism. The temperature dependences of the Debye-Waller factors were fitted and fit parameters are given.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Copenhagen Editor  
  Language Wos 000264927100006 Publication Date 2009-03-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0108-7673; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 5.725 Times cited 23 Open Access  
  Notes Fwo G.0425.05; Esteem 026019 Approved Most recent IF: 5.725; 2009 IF: 49.926  
  Call Number UA @ lucian @ c:irua:74565 Serial 3497  
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Author Verbeeck, J.; Sc hattschneider, P.; Rosenauer, A. pdf  doi
openurl 
  Title Image simulation of high resolution energy filtered TEM images Type A1 Journal article
  Year (down) 2009 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 109 Issue 4 Pages 350-360  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Inelastic image simulation software is presented, implementing the double channeling approximation which takes into account the combination of multiple elastic and single inelastic scattering in a crystal. The approach is described with a density matrix formalism. Two applications in high resolution energy filtered (EFTEM) transmission electron microscopy (TEM) images are presented: thickness-defocus maps for SrTiO3 and exit plane intensities for an (LaAlO3)3(SrTiO3)3 multilayer system. Both systems show a severe breakdown in direct interpretability which becomes worse for higher acceleration voltages, thicker samples and lower excitation edge energies. Since this effect already occurs in the exit plane intensity, it is a fundamental limit and image simulations in EFTEM are indispensable just as they are indispensable for elastic high resolution TEM images.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000265345400009 Publication Date 2009-01-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 36 Open Access  
  Notes Fwo; Esteem 026019 Approved Most recent IF: 2.843; 2009 IF: 2.067  
  Call Number UA @ lucian @ c:irua:77272UA @ admin @ c:irua:77272 Serial 1552  
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Author Schowalter, M.; Rosenauer, A.; Titantah, J.T.; Lamoen, D. doi  openurl
  Title Computation and parametrization of the temperature dependence of Debye-Waller factors for group IV, III-V and II-VI semiconductors Type A1 Journal article
  Year (down) 2009 Publication Acta crystallographica: section A: foundations of crystallography Abbreviated Journal Acta Crystallogr A  
  Volume 65 Issue 1 Pages 5-17  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We calculated the temperature dependence of the Debye-Waller factors for a variety of group IV, III-V and II-VI semiconductors from 0.1 to 1000 K. The approach used to fit the temperature dependence is described and resulting fit parameters are tabulated for each material. The Debye-Waller factors are deduced from generalized phonon densities of states which were derived from first principles using the WIEN2k and the ABINIT codes.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Copenhagen Editor  
  Language Wos 000261799500002 Publication Date 2008-11-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0108-7673; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 5.725 Times cited 51 Open Access  
  Notes Fwo G.0425.05; Esteem 026019 Approved Most recent IF: 5.725; 2009 IF: 49.926  
  Call Number UA @ lucian @ c:irua:72918 Serial 453  
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Author Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. url  doi
openurl 
  Title Size effects and strain state of Ga1-xInxAs/GaAs multiple quantum wells: Monte Carlo study Type A1 Journal article
  Year (down) 2008 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 78 Issue 16 Pages 165326,1-165326,7  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The effect of the size of the GaAs barrier and the Ga1−xInxAs well on the structural properties of a Ga1−xInxAs/GaAs multiple quantum well structure is investigated using the Metropolis Monte Carlo approach based on a well-parametrized Tersoff potential. It is found that within the well the Ga-As and In-As bond lengths undergo contractions whose magnitude increases with increasing In content in sharp contrast with bond-length variations in the bulk Ga1−xInxAs systems. For fixed barrier size and In content, the contraction of the bonds is also found to increase with increasing size of the well. Using the local atomic structure of the heterostructures, a more local analysis of the strain state of the systems is given and comparison with the prediction of macroscopic continuum elasticity theory shows deviations from the latter.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos 000260574500084 Publication Date 2008-10-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 5 Open Access  
  Notes Approved Most recent IF: 3.836; 2008 IF: 3.322  
  Call Number UA @ lucian @ c:irua:72920 Serial 3036  
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Author Rosenauer, A.; Schowalter, M.; Titantah, J.T.; Lamoen, D. doi  openurl
  Title An emission-potential multislice approximation to simulate thermal diffuse scattering in high-resolution transmission electron microscopy Type A1 Journal article
  Year (down) 2008 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 108 Issue 12 Pages 1504-1513  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Thermal diffuse scattered electrons significantly contribute to high-resolution transmission electron microscopy images. Their intensity adds to the background and is peaked at positions of atomic columns. In this paper we suggest an approximation to simulate intensity of thermal diffuse scattered electrons in plane-wave illumination transmission electron microscopy using an emission-potential multislice algorithm which is computationally less intensive than the frozen lattice approximation or the mutual intensity approach. Intensity patterns are computed for Au and InSb for different crystal orientations. These results are compared with intensities from the frozen lattice approximation based on uncorrelated vibration of atoms as well as with the frozen phonon approximation for Au. The frozen phonon method uses a detailed phonon model based on force constants we computed by a density functional theory approach. The comparison shows that our suggested emission-potential method is in close agreement with both the frozen lattice and the frozen phonon approximations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000260808300002 Publication Date 2008-04-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 25 Open Access  
  Notes Approved Most recent IF: 2.843; 2008 IF: 2.629  
  Call Number UA @ lucian @ c:irua:72919 Serial 1033  
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Author Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. openurl 
  Title Effect of temperature on the 002 electron structure factor and its consequence for the quantification of ternary and quaternary III-V crystals Type A1 Journal article
  Year (down) 2008 Publication Springer proceedings in physics Abbreviated Journal  
  Volume 120 Issue Pages 189-194  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:73965 Serial 839  
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Author Schowalter, M.; Rosenauer, A.; Titantah, J.T.; Lamoen, D. openurl 
  Title Calculation of Debye-Waller temperature factors for GaAs Type A1 Journal article
  Year (down) 2008 Publication Springer proceedings in physics Abbreviated Journal  
  Volume 120 Issue Pages 195-198  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:73966 Serial 266  
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Author Rossi, E.H.M.; Van Tendeloo, G.; Rosenauer, A. doi  openurl
  Title Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM Type A1 Journal article
  Year (down) 2007 Publication Philosophical magazine Abbreviated Journal Philos Mag  
  Volume 87 Issue 29 Pages 4461-4473  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000249890700003 Publication Date 2007-09-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1478-6435;1478-6443; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.505 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.505; 2007 IF: 1.486  
  Call Number UA @ lucian @ c:irua:66612 Serial 1638  
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Author Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. doi  openurl
  Title Temperature effect on the 002 structure factor of ternary Ga1-xInxAs crystals Type A1 Journal article
  Year (down) 2007 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 76 Issue 7 Pages 073303,1-4  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos 000249155300011 Publication Date 2007-08-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 3 Open Access  
  Notes Approved Most recent IF: 3.836; 2007 IF: 3.172  
  Call Number UA @ lucian @ c:irua:66116 Serial 3499  
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Author Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. doi  openurl
  Title Bond length variation in Ga1-xInxAs crystals from the Tersoff potential Type A1 Journal article
  Year (down) 2007 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 101 Issue 12 Pages 123508,1-4  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000247625700034 Publication Date 2007-06-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 19 Open Access  
  Notes Approved Most recent IF: 2.068; 2007 IF: 2.171  
  Call Number UA @ lucian @ c:irua:67460 Serial 247  
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Author Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kruse, P.; Gerthsen, D. doi  openurl
  Title Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold Type A1 Journal article
  Year (down) 2006 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett  
  Volume 88 Issue 23 Pages Artn 232108  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000238914500031 Publication Date 2006-06-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 8 Open Access  
  Notes Approved Most recent IF: 3.411; 2006 IF: 3.977  
  Call Number UA @ lucian @ c:irua:60581 Serial 33  
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Author Kruse, P.; Schowalter, M.; Lamoen, D.; Rosenauer, A.; Gerthsen, D. doi  openurl
  Title Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography Type A1 Journal article
  Year (down) 2006 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 106 Issue 2 Pages 105-113  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000234535900005 Publication Date 2005-07-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 50 Open Access  
  Notes Approved Most recent IF: 2.843; 2006 IF: 1.706  
  Call Number UA @ lucian @ c:irua:56143 Serial 678  
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Author Piscopiello, E.; Rosenauer, A.; Passaseo, A.; Montoya Rossi, E.H.; Van Tendeloo, G. pdf  doi
openurl 
  Title Segregation in InxGa1-xAs/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition Type A1 Journal article
  Year (down) 2005 Publication Philosophical magazine Abbreviated Journal Philos Mag  
  Volume 85 Issue 32 Pages 3857-3870  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000233171500007 Publication Date 2005-11-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1478-6435;1478-6443; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.505 Times cited 11 Open Access  
  Notes Approved Most recent IF: 1.505; 2005 IF: 1.470  
  Call Number UA @ lucian @ c:irua:59054 Serial 2961  
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Author Rosenauer, A.; Schowalter, M.; Glas, F.; Lamoen, D. doi  openurl
  Title First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs Type A1 Journal article
  Year (down) 2005 Publication Physical Review B Abbreviated Journal Phys Rev B  
  Volume 72 Issue 8 Pages 1-10  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract This work provides values of electron scattering 002 structure factors for InxGa1-xAs as a function of the In concentration x=0 to 1. These results allow accurate compositional analysis of pseudomorphically grown InxGa1-xAs/GaAs layers by transmission electron microscopy methods relying on the chemical sensitivity of the (002) beam. The calculations go beyond the limits of the isolated atom approximation, because they take into account charge redistribution effects between atomic sites in the crystal, strain, and static atomic displacements. The computations were performed by the full potential linearized augmented plane-wave method using a generalized gradient approximation for the exchange and correlation part of the potential. The calculations of strained InxGa1-xAs correspond to the strain state in specimens with large, small, and intermediate thickness in the electron beam direction. Additionally, the effect of static atomic displacements is taken into account. All results are listed in a parameterized form. The calculated 002 structure factor vanishes at an In concentration of 16.4%. This value is in a good agreement with previously reported experimental measurements. Hence, our results are a significant improvement with respect to the isolated atom approximation which is conventionally applied in transmission electron microscopy simulations, and which predicts a value of 22.5%.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos 000231564600106 Publication Date 2005-08-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 42 Open Access  
  Notes Approved Most recent IF: 3.836; 2005 IF: 3.185  
  Call Number UA @ lucian @ c:irua:54918 Serial 1201  
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Author Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R.; Waag, A. doi  openurl
  Title Measurement of the mean inner potential of ZnO nanorods by transmission electron holography Type A1 Journal article
  Year (down) 2005 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett  
  Volume 86 Issue 15 Pages  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000228901600121 Publication Date 2005-04-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 5 Open Access  
  Notes Approved Most recent IF: 3.411; 2005 IF: 4.127  
  Call Number UA @ lucian @ c:irua:54917 Serial 1963  
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Author Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kruse, P.; Gerthsen, D. openurl 
  Title Ab initio computation of the mean inner Coulomb potential of technological important semiconductors Type A1 Journal article
  Year (down) 2005 Publication Abbreviated Journal  
  Volume 1007 Issue Pages 233-236  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:72915 Serial 32  
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Author Rosenauer, A.; Schowalter, M.; Glas, F.; Lamoen, D. openurl 
  Title First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs Type A1 Journal article
  Year (down) 2005 Publication Abbreviated Journal  
  Volume 107 Issue Pages 151-154  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:72916 Serial 1202  
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Author Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R. pdf  openurl
  Title Measurement of the mean inner potential of ZnO nanorods by transmission electron holography Type A1 Journal article
  Year (down) 2005 Publication Microscopy of Semiconducting Materials Abbreviated Journal  
  Volume 107 Issue Pages 303-306  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title SPRINGER PROCEEDINGS IN PHYSICS Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:72914 Serial 1962  
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Author Schowalter, M.; Lamoen, D.; Kruse, P.; Gerthsen, D.; Rosenauer, A. doi  openurl
  Title First-principles calculations of the mean inner Coulomb potential for sphalerite type II.VI semiconductors Type A1 Journal article
  Year (down) 2004 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett  
  Volume 85 Issue 21 Pages 4938-4940  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000225300600037 Publication Date 2004-11-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 16 Open Access  
  Notes Approved Most recent IF: 3.411; 2004 IF: 4.308  
  Call Number UA @ lucian @ c:irua:49657 Serial 1203  
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Author Rosenauer, A.; Gerthsen, D.; Van Aert, S.; van Dyck, D.; den Dekker, A.J. openurl 
  Title Present state of the composition evaluation of ternary semiconductor nanostructures by lattice fringe analysis Type A1 Journal article
  Year (down) 2003 Publication Institute of physics conference series Abbreviated Journal  
  Volume Issue 180 Pages 19-22  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract Semiconductor heterostructures are used for the fabrication of optoelectronic devices. Performance of such devices is governed by their chemical morphology. The composition distribution of quantum wells and dots is influenced by kinetic growth processes which are not understood completely at present. To obtain more information about these effects, methods for composition determination with a spatial resolution at a near atomic scale are necessary. In this paper we focus on the present state of the composition evaluation by the lattice fringe analysis (CELFA) technique and explain the basic ideas, optimum imaging conditions, precision and accuracy.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0979-2 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:95118 Serial 2710  
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