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Author Ignatova, V.A.; Möller, W.; Conard, T.; Vandervorst, W.; Gijbels, R. doi  openurl
  Title Interpretation of TOF-SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation Type A1 Journal article
  Year (down) 2005 Publication Applied physics A : materials science & processing Abbreviated Journal Appl Phys A-Mater  
  Volume 81 Issue 1 Pages 71-77  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Heidelberg Editor  
  Language Wos 000228794000013 Publication Date 2005-04-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0947-8396;1432-0630; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.455 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.455; 2005 IF: 1.990  
  Call Number UA @ lucian @ c:irua:60085 Serial 1711  
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Author Kalitzova, M.; Vlakhov, E.; Marinov, Y.; Gesheva, K.; Ignatova, V.A.; Lebedev, O.; Muntele, C.; Gijbels, R. pdf  doi
openurl 
  Title Effect of high-frequency electromagnetic field on Te+-implanted (001) Si</tex> Type A1 Journal article
  Year (down) 2004 Publication Vacuum: the international journal and abstracting service for vacuum science and technology Abbreviated Journal Vacuum  
  Volume 76 Issue 2-3 Pages 325-328  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The analysis of high-frequency electromagnetic field (HFEMF) effects on the microstructure and electrical properties of Te+ implanted (0 0 1) Si is reported. Cross-sectional high-resolution transmission electron microscopy (XHRTEM) demonstrates the formation of Te nanoclusters (NCs) embedded in the Si layer amorphized by implantation (a-Si) at fluences greater than or equal to 1 x 10(16) cm(-2). Post-implantation treatment with 0.45 MHz HFEMF leads to enlargement of Te NCs, their diffusion and accumulation at the a-Si surface and formation of laterally connected extended tellurium structures above the percolation threshold, appearing at an ion fluence of 1 x 10(17) cm(-2). AC electrical conductivity measurements show nearly four orders of magnitude decrease of impedance resistivity in this case, which is in good agreement with the results of our structural studies. The results obtained are discussed in terms of the two-phase isotropic spinodal structure. (C) 2004 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000224890100048 Publication Date 2004-08-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0042-207X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.53 Times cited 2 Open Access  
  Notes Approved Most recent IF: 1.53; 2004 IF: 0.902  
  Call Number UA @ lucian @ c:irua:95105 Serial 814  
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Author Ignatova, V.A.; Conard, T.; Möller, W.; Vandervorst, W.; Gijbels, R. doi  openurl
  Title Depth profiling of ZrO2/SiO2/Si stacks : a TOF-SIMS and computer simulation study Type A1 Journal article
  Year (down) 2004 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 231/232 Issue Pages 603-608  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract This study is dedicated to a better understanding of the processes occurring under ion bombardment of ultra-thin ZrO2/SiO2/Si gate dielectric stacks. Complex-shaped depth profiles were obtained by using TOF-SIMS with dual beam (500 eV for sputtering and 10 keV for analysis) Ar+ ions. The SIMS intensities of all the elements depend critically on the amount of oxygen at any moment of the sputtering process. Increased intensity is observed at the surface and at the ZrO2/SiO2 interface. A long tail of the Zr signal is present in the Si substrate, even after the second (SiO2/Si) interface, and a double bump structure in the Zr-90 and ZrO dimer is observed, which is more pronounced with increasing thickness of the interfacial SiO2 layer. Computer simulations using the dynamic Monte Carlo code (TRIDYN) are performed in order to distinguish the ion bombardment-induced effects from changes in the ionization degree. The original code is extended with simple models for the ionization mechanism and for the molecular yield during sputtering. Oxygen preferential sputtering at the surface and ballistic transport of Zr towards and through the interface are clearly demonstrated, but there is also evidence that due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. (C) 2004 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000222427700118 Publication Date 2004-05-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.387 Times cited 4 Open Access  
  Notes Approved Most recent IF: 3.387; 2004 IF: 1.497  
  Call Number UA @ lucian @ c:irua:51976 Serial 651  
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Author Ignatova, V.A.; van Vaeck, L.; Gijbels, R.; Adams, F. doi  openurl
  Title Molecular speciation of inorganic mixtures by Fourier transform laser microprobe mass sepctrometry Type A1 Journal article
  Year (down) 2003 Publication International journal of mass spectrometry Abbreviated Journal Int J Mass Spectrom  
  Volume 225 Issue Pages 213-224  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000181179500002 Publication Date 2003-02-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1387-3806; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.702 Times cited 9 Open Access  
  Notes Approved Most recent IF: 1.702; 2003 IF: 2.361  
  Call Number UA @ lucian @ c:irua:41595 Serial 2183  
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Author Ignatova, V.A.; Lebedev, O.I.; Wätjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. doi  openurl
  Title Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation Type A1 Journal article
  Year (down) 2002 Publication Microchimica acta Abbreviated Journal Microchim Acta  
  Volume 139 Issue Pages 77-81  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Wien Editor  
  Language Wos 000175560300012 Publication Date 2003-03-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-3672;1436-5073; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.58 Times cited 3 Open Access  
  Notes Approved Most recent IF: 4.58; 2002 IF: NA  
  Call Number UA @ lucian @ c:irua:38378 Serial 2420  
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Author Ignatova, V.A.; van Vaeck, L.; Gijbels, R.; Adams, F. pdf  doi
openurl 
  Title Capabilities and limitations of Fourier transform laser microprobe mass spectrometry for molecular analysis of solids Type A1 Journal article
  Year (down) 2002 Publication Vacuum Abbreviated Journal Vacuum  
  Volume 69 Issue Pages 307-313  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Fourier transform laser microprobe mass spectrometry (FT LMMS) has been developed for the molecular analysis of both organic and inorganic components at the surface of microobjects with the ultimate specificity of high-mass resolution. These capabilities are needed in numerous applications of practical material analysis, such as tracing back anomalies in microobjects. The purpose of this paper is to address representative example from industrial trouble shooting, in which organic and inorganic analytes in a single microparticle have been identified unambiguously. This motivates the research to extend the methodology towards quantification. This paper deals with the fundamental aspect of information depth, specifically for inorganic molecular adduct ions. Finally, data will show the quantitative capabilities of FT LMMS. A suitable methodology for the preparation of reference specimens has allowed the empirical calibration of the response as a function of the local concentration to be achieved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000180739000050 Publication Date 2002-12-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0042-207X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.53 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.53; 2002 IF: 0.723  
  Call Number UA @ lucian @ c:irua:43192 Serial 274  
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Author Ignatova, V.A.; Lebedev, O.I.; Watjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. pdf  doi
openurl 
  Title Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions Type A1 Journal article
  Year (down) 2002 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 92 Issue 8 Pages 4336-4341  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000178318000024 Publication Date 2002-10-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 5 Open Access  
  Notes Approved Most recent IF: 2.068; 2002 IF: 2.281  
  Call Number UA @ lucian @ c:irua:39872 Serial 2005  
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Author Lenaerts, J.; Verlinden, G.; Ignatova, V.A.; van Vaeck, L.; Gijbels, R.; Geuens, I. doi  openurl
  Title Modeling of the sputtering process of cubic silver halide microcrystals and its relevance in depth profiling by secondary ion-mass spectrometry (SIMS) Type A1 Journal article
  Year (down) 2001 Publication Fresenius' journal of analytical chemistry Abbreviated Journal Fresen J Anal Chem  
  Volume 370 Issue 5 Pages 654-662  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000170115200032 Publication Date 2002-10-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0937-0633;1432-1130; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 3 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:37251 Serial 2135  
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