Abstract: In this study, we predicted two new stable metallic Re-C based monolayer structures with a rectangular (r-ReC2) and a hexagonal (h-Re2C) crystal symmetry using first-principle calculations based on density functional theory. Our results obtained from mechanical and phonon calculations and high-temperature molecular dynamic simulations clearly proved the stability of these two-dimensional (2D) crystals. Interestingly, Re-C monolayers in common transition metal carbide structures (i.e. MXenes) were found to be unstable, contrary to expectations. We found that the stable structures, i.e. r-ReC2 and h-Re2C, display superior mechanical properties over the well-known 2D materials. The Young's modulus for r-ReC2 and h-Re2C are extremely high and were calculated as 351 (1310) and 617 (804) N/m (GPa), respectively. Both materials have larger Young's modulus values than the most of the well-known 2D materials. We showed that the combination of the short strong directional p-d bonds, the high coordination number of atoms in the unit-cell and high valence electron density result in strong mechanical properties. Due to its crystal structure, the r-ReC2 monolayer has anisotropic mechanical properties and the crystallographic direction parallel to the C-2 dimers is stiffer compared to perpendicular direction due to strong covalent bonding within C-2 dimers. h-Re2C was derived from the corresponding bulk structure for which we determined the critical thickness for the dynamically stable bulk-derived monolayer structures. In addition, we also investigated the electronic of these two stable structures. Both exhibit metallic behavior and Re-5d orbitals dominate the states around the Fermi level. Due to their ultra high mechanical stability and stiffness, these novel Re-C monolayers can be exploited in various engineering applications.

Abstract: We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4“bis(diphenylamino)-1, 1':3”-terpheny1-5' carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-y1-1,1':3'1'-terpheny1-5' carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13,1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as n-n interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode. (C) 2017 Elsevier B.V. All rights reserved.

Abstract: This study presents first-principles results on the electronic functionalization of silicene and germanene monolayers by means of chemisorption of adatom species H, Li, F, Sc, Ti, V. Three general adatom-monolayer configurations are considered, each having its distinct effect on the electronic structure, yielding metallic or semiconducting dispersions depending on the adatom species and configuration. The induced bandgap is a (in)direct F gap ranging from 0.2 to 2.3 eV for both silicene and germanene. In general the alternating configuration was found to be the most energetically stable. The boatlike and chairlike conformers are degenerate with the former having anisotropic effective carrier masses. The top configuration leads to the planar monolayer and predominately to a gapped dispersion. The hollow configuration with V adatoms retains the Dirac cone, but with strong orbital planar hybridization at the Fermi level. We also observe a planar surface state the Fermi level for the latter systems. (C) 2013 Elsevier B.V. All rights reserved.

Abstract: This study is dedicated to a better understanding of the processes occurring under ion bombardment of ultra-thin ZrO2/SiO2/Si gate dielectric stacks. Complex-shaped depth profiles were obtained by using TOF-SIMS with dual beam (500 eV for sputtering and 10 keV for analysis) Ar+ ions. The SIMS intensities of all the elements depend critically on the amount of oxygen at any moment of the sputtering process. Increased intensity is observed at the surface and at the ZrO2/SiO2 interface. A long tail of the Zr signal is present in the Si substrate, even after the second (SiO2/Si) interface, and a double bump structure in the Zr-90 and ZrO dimer is observed, which is more pronounced with increasing thickness of the interfacial SiO2 layer. Computer simulations using the dynamic Monte Carlo code (TRIDYN) are performed in order to distinguish the ion bombardment-induced effects from changes in the ionization degree. The original code is extended with simple models for the ionization mechanism and for the molecular yield during sputtering. Oxygen preferential sputtering at the surface and ballistic transport of Zr towards and through the interface are clearly demonstrated, but there is also evidence that due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. (C) 2004 Elsevier B.V. All rights reserved.

Abstract: In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.

Abstract: A variety of samples, collected from different historical buildings and monuments throughout Belgium, were thoroughly studied, using several trace- and micro-analysis techniques. Thin sections of stones and mortar joints were characterized by means of electron probe X-ray microanalysis (EPXMA). The morphological appearance of the surface weathering crust and the possible presence of non-innate particles in the crust were elucidated using petrographical and electron microscopy. Quantitative characterization of the total chemical composition of the crust surface layer and underlying layer was performed by energy-dispersive X-ray fluorescence, and by ion chromatography and atomic absorption spectrometry for the leachable components. Special attention was also paid to the chemical composition of rain and air at the particular sampling sites. The element distribution in the transition zone between the weathering crust and the original stone material was found to vary greatly amongst the different samples analyzed. Detailed EPXMA measurements on pieces of the weathering crust showed remarkable differences in morphology and composition between the surface and the underlying layer, and provided information about the presence of fly-ash and soil dust particles in the crust. Except for crusts from the city of Brussels, which were all very high in sulphate, the samples appeared to contain very variable sulphate contents; very local micro-climate and environmental conditions at a particular site are more important in determining the weathering condition of the building stones than the local air pollution situation. Bulk analytical characterization further showed, in all the crust samples studied, a very small contribution of nitrogen- and chlorine-containing weathering products, in contrast to sulphur-containing weathering salts.

Abstract: The Maastricht limestone used for the construction of the 14th century O.L. Basilica in Tongeren, Belgium, is a light yellowish, porous, soft rock of the Late Cretaceous age. The limestone has a high carbonate content (> 95%); quartz and glauconite occur rarely. On the north side of the building, there is extensive growth of epilithic algae. On the south side, an assemblage of organisms was observed beneath the abiotic surface. This community, developed as a green layer 1 mm below the surface, is dominated by cyanobacteria. A moss was also present. The organisms were studied by transmitted light, phase contrast and scanning electron microscopy, and isolated in cultures. The cyanobacteria belong to the genera Synechococcus and Chroococcidiopsis, and the moss was identified as Tortula muralis Hedw. The organic matter present in the green layer was characterized in terms of molecular components using analytical pyrolysis. Pyrolysis products from polysaccharides and proteins, and evaporation/pyrolysis products from lipids, comprise the vast majority of identified compounds. The identification of specific biomarkers such as 7-methylheptadecane is further evidence of the presence of cyanobacteria. Phytenes and phytadienes are indicative of phototrophic organisms, as they are pyrolysis products from chlorophylls.

Abstract: Yamuna River sediments are more enriched in metals than those of the Ganges and average Indian river sediments. Variation of metals in suspended, bed and core sediment are due to the varying proportions of grain size and mineral content. Iron, Mn and Pb show a preference for the oxide fraction, whereas Cu and Zn are predominant in organic and carbonate fractions of sediments. Of the total elemental content, 80% Mn, 78% Fe, 69% Pb, 67% Cu and 55% Zn are available in chemically mobile phases of the sediments. The high partition coefficient of metals with respect to Mn suggests similar chemical mobility and preferences for solid phases. River sediments in the vicinity of Delhi show an increase in sorption of metals downstream, consequently metals are retained in sediments. The high correlation coefficient and significant regression relation among the metals indicate their similar behaviour during transport. At Allahabad, the contribution of the Yamuna to the Ganges is 3200 t Pb year−1, 12 100 t Zn year−1 and 8500 t Cu year−1 in particulate form.