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Author Wang, X.F.; Vasilopoulos, P.; Peeters, F.M.
Title Inverse flux quantum periodicity of magnetoresistance oscillations in two-dimensional short-period surface superlattices Type (up) A1 Journal article
Year 2004 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 69 Issue Pages 035331,1-11
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000188883800075 Publication Date 2004-01-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 10 Open Access
Notes Approved Most recent IF: 3.836; 2004 IF: 3.075
Call Number UA @ lucian @ c:irua:69379 Serial 1722
Permanent link to this record
 
 
Author Mao, M.; Bogaerts, A.
Title Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma enhanced CVD system : the effect of different gas mixtures Type (up) A1 Journal article
Year 2010 Publication Journal of physics: D: applied physics Abbreviated Journal J Phys D Appl Phys
Volume 43 Issue 20 Pages 205201,1-205201,20
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract A hybrid model, called the hybrid plasma equipment model (HPEM), was used to study an inductively coupled plasma in gas mixtures of H2 or NH3 with CH4 or C2H2 used for the synthesis of carbon nanotubes or carbon nanofibres (CNTs/CNFs). The plasma properties are discussed for different gas mixtures at low and moderate pressures, and the growth precursors for CNTs/CNFs are analysed. It is found that C2H2, C2H4 and C2H6 are the predominant molecules in CH4 containing plasmas besides the feedstock gas, and serve as carbon sources for CNT/CNF formation. On the other hand, long-chain hydrocarbons are observed in C2H2-containing plasmas. Furthermore, the background gases CH4 and C2H2 show a different decomposition rate with H2 or NH3 addition at moderate pressures.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000277373400009 Publication Date 2010-05-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3727;1361-6463; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.588 Times cited 52 Open Access
Notes Approved Most recent IF: 2.588; 2010 IF: 2.109
Call Number UA @ lucian @ c:irua:82067 Serial 1723
Permanent link to this record
 
 
Author Mao, M.; Bogaerts, A.
Title Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma-enhanced CVD system : the effect of processing parameters Type (up) A1 Journal article
Year 2010 Publication Journal of physics: D: applied physics Abbreviated Journal J Phys D Appl Phys
Volume 43 Issue 31 Pages 315203-315203,15
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract A parameter study is carried out for an inductively coupled plasma used for the synthesis of carbon nanotubes or carbon nanofibres (CNTs/CNFs), by means of the Hybrid Plasma Equipment Model. The influence of processing parameters including gas ratio for four different gas mixtures typically used for CNT/CNF growth (i.e. CH4/H2, CH4/NH3, C2H2/H2 and C2H2/NH3), inductively coupled plasma (ICP) power (501000 W), operating pressure (10 mTorr1 Torr), bias power (01000 W) and temperature of the substrate (01000 °C) on the plasma chemistry is investigated and the optimized conditions for CNT/CNF growth are analysed. Summarized, our calculations suggest that a lower fraction of hydrocarbon gases (CH4 or C2H2, i.e. below 20%) and hence a higher fraction of etchant gases (H2 or NH3) in the gas mixture result in more 'clean' conditions for controlled CNT/CNF growth. The same applies to a higher ICP power, a moderate ICP gas pressure above 100 mTorr (at least for single-walled carbon nanotubes), a high bias power (for aligned CNTs) and an intermediate substrate temperature.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000280275200007 Publication Date 2010-07-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3727;1361-6463; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.588 Times cited 17 Open Access
Notes Approved Most recent IF: 2.588; 2010 IF: 2.109
Call Number UA @ lucian @ c:irua:88365 Serial 1724
Permanent link to this record
 
 
Author Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G.
Title Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures Type (up) A1 Journal article
Year 2001 Publication Journal of the electrochemical society Abbreviated Journal J Electrochem Soc
Volume 148 Issue 11 Pages G597-G601
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000171653100038 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0013-4651; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.259 Times cited 13 Open Access
Notes Approved Most recent IF: 3.259; 2001 IF: 2.033
Call Number UA @ lucian @ c:irua:103394 Serial 1725
Permanent link to this record
 
 
Author Cloots, R.; Rulmont, A.; Krekels, T.; Van Tendeloo, G.; Diko, P.; Ausloos, M.
Title Investigation by electron diffraction microscopy of (RE)BaCuOS polycrystalline ceramic compounds: interpretation of unexpected superstructures and influence of secondary phases Type (up) A1 Journal article
Year 1993 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 129 Issue Pages 394-404
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1993KY53000003 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.698 Times cited 5 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:7503 Serial 1726
Permanent link to this record
 
 
Author Aerts, R.; Tu, X.; De Bie, C.; Whitehead, J.C.; Bogaerts, A.
Title An investigation into the dominant reactions for ethylene destruction in non-thermal atmospheric plasmas Type (up) A1 Journal article
Year 2012 Publication Plasma processes and polymers Abbreviated Journal Plasma Process Polym
Volume 9 Issue 10 Pages 994-1000
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract A crucial step, which is still not well understood in the destruction of volatile organic compounds (VOCs) with low temperature plasmas, is the initiation of the process. Here, we present a kinetic model for the destruction of ethylene in low temperature plasmas that allows us to calculate the relative importance of all plasma species and their related reactions. Modifying the ethylene concentration and/or the SED had a major impact on the relative importance of the radicals (i.e., mainly atomic oxygen) and the metastable nitrogen (i.e., more specifically N2(equation image)) in the destruction process. Our results show that the direct destruction by electron impact reactions for ethylene can be neglected; however, we can certainly not neglect the influence of N2(equation image)).
Address
Corporate Author Thesis
Publisher Place of Publication Weinheim Editor
Language Wos 000309750300008 Publication Date 2012-07-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1612-8850; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.846 Times cited 46 Open Access
Notes Approved Most recent IF: 2.846; 2012 IF: 3.730
Call Number UA @ lucian @ c:irua:101765 Serial 1727
Permanent link to this record
 
 
Author Saeed, A.; Khan, A.W.; Shafiq, M.; Jan, F.; Abrar, M.; Zaka-ul-Islam, M.; Zakaullah, M.
Title Investigation of 50 Hz pulsed DC nitrogen plasma with active screen cage by trace rare gas optical emission spectroscopy Type (up) A1 Journal article
Year 2014 Publication Plasma science & technology Abbreviated Journal Plasma Sci Technol
Volume 16 Issue 4 Pages 324-328
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Optical emission spectroscopy is used to investigate the nitrogen-hydrogen with trace rare gas (4% Ar) plasma generated by 50 Hz pulsed DC discharges. The filling pressure varies from 1 mbar to 5 mbar and the current density ranges from 1 mA.cm(-2) to 4 mA.cm(-2). The hydrogen concentration in the mixture plasma varies from 0% to 80%, with the objective of identifying the optimum pressure, current density and hydrogen concentration for active species ([N] and [N-2]) generation. It is observed that in an N-2-H-2 gas mixture, the concentration of N atom density decreases with filling pressure and increases with current density, with other parameters of the discharge kept unchanged. The maximum concentrations of active species were found for 40% H-2 in the mixture at 3 mbar pressure and current density of 4 mA.cm(-2).
Address
Corporate Author Thesis
Publisher Institute of Plasma Physics, the Chinese Academy of Sciences Place of Publication Beijing Editor
Language Wos 000335909600005 Publication Date 2014-04-29
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1009-0630; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.83 Times cited 5 Open Access
Notes Approved Most recent IF: 0.83; 2014 IF: 0.579
Call Number UA @ lucian @ c:irua:117686 Serial 1728
Permanent link to this record
 
 
Author Musolino, N.; Bals, S.; Van Tendeloo, G.; Clayton, N.; Walker, E.; Flukiger, R.
Title Investigation of (Bi,Pb)2212 crystals : observation of modulation-free phase Type (up) A1 Journal article
Year 2004 Publication Physica: C : superconductivity Abbreviated Journal Physica C
Volume 401 Issue 1-4 Pages 270-272
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We report the complete disappearance of the structural modulation in heavily lead-doped Bi2-xPbxSr2CaCu2O8+delta crystals observed by transmission electron microscopy. Crystals with a nominal lead content of x = 0.8, corresponding to an effective lead content of x = 0.39, yield the non-modulated phase. The superconducting properties of this modulation-free phase (beta phase) have been studied and compared to those of undoped crystals displaying the modulated phase (alpha phase). Magnetisation measurements reveal that the irreversibility field H-irr(T) and relaxation rates are strongly improved within the beta phase. Measurements of the lower critical field, H-cl, show that the anisotropy factor, E, is considerably reduced in the modulation-free crystals. This is the signature of stronger coupling between CuO2 layers which in turn deeply influences the effectiveness of the pinning. These measurements explain the enhanced pinning properties in moderately Pb-doped crystals in which the a phase and P phase coexist. The enhanced pinning is not only due to the alpha/beta interfaces, which act as effective pinning centers: the emergence of modulation-free domains, characterized by a strongly reduced anisotropy, also significantly contribute to this effect. (C) 2003 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000187852100050 Publication Date 2003-10-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.404 Times cited 9 Open Access
Notes Approved Most recent IF: 1.404; 2004 IF: 1.072
Call Number UA @ lucian @ c:irua:94809 Serial 1730
Permanent link to this record
 
 
Author Tinck, S.; Boullart, W.; Bogaerts, A.
Title Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasmasurface simulations and experiments Type (up) A1 Journal article
Year 2009 Publication Journal of physics: D: applied physics Abbreviated Journal J Phys D Appl Phys
Volume 42 Issue Pages 095204,1-095204,13
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this paper, a simulation method is described to predict the etching behaviour of Cl2/O2/Ar inductively coupled plasmas on a Si substrate, as used in shallow trench isolation for the production of electronic devices. The hybrid plasma equipment model (HPEM) developed by Kushner et al is applied to calculate the plasma characteristics in the reactor chamber and two additional Monte Carlo simulations are performed to predict the fluxes, angles and energy of the plasma species bombarding the Si substrate, as well as the resulting surface processes such as etching and deposition. The simulations are performed for a wide variety of operating conditions such as gas composition, chamber pressure, power deposition and substrate bias. It is predicted by the simulations that when the fraction of oxygen in the gas mixture is too high, the oxidation of the Si substrate is superior to the etching of Si by chlorine species, resulting in an etch rate close to zero as is also observed in the experiments.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000265531000030 Publication Date 2009-04-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3727;1361-6463; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.588 Times cited 23 Open Access
Notes Approved Most recent IF: 2.588; 2009 IF: 2.083
Call Number UA @ lucian @ c:irua:75601 Serial 1731
Permanent link to this record
 
 
Author de Bleecker, K.; Bogaerts, A.; Goedheer, W.; Gijbels, R.
Title Investigation of growth mechanisms of clusters in a silane discharge with the use of a fluid model Type (up) A1 Journal article
Year 2004 Publication IEEE transactions on plasma science Abbreviated Journal Ieee T Plasma Sci
Volume 32 Issue 2 Pages 691-698
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000222278400026 Publication Date 2004-06-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0093-3813; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.052 Times cited 29 Open Access
Notes Approved Most recent IF: 1.052; 2004 IF: 1.042
Call Number UA @ lucian @ c:irua:46379 Serial 1732
Permanent link to this record
 
 
Author Bogaerts, A.; Gijbels, R.; Grozeva, M.; Sabotinov, N.
Title Investigation of laser output power saturation in the He-Cu+ IR hollow cathode discharge laser by experiments and numerical modeling Type (up) A1 Journal article
Year 2003 Publication Physica scripta Abbreviated Journal Phys Scripta
Volume T105 Issue Pages 90-97
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Stockholm Editor
Language Wos 000184344900014 Publication Date 2003-07-31
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8949; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.28 Times cited Open Access
Notes Approved Most recent IF: 1.28; 2003 IF: 0.688
Call Number UA @ lucian @ c:irua:44019 Serial 1733
Permanent link to this record
 
 
Author Brammertz, G.; Oueslati, S.; Buffiere, M.; Bekaert, J.; El Anzeery, H.; Messaoud, K.B.; Sahayaraj, S.; Nuytten, T.; Koble, C.; Meuris, M.; Poortmans, J.;
Title Investigation of properties limiting efficiency in Cu2ZnSnSe4-based solar cells Type (up) A1 Journal article
Year 2015 Publication IEEE journal of photovoltaics Abbreviated Journal Ieee J Photovolt
Volume 5 Issue 5 Pages 649-655
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract We have investigated different nonidealities in Cu2ZnSnSe4CdSZnO solar cells with 9.7% conversion efficiency, in order to determine what is limiting the efficiency of these devices. Several nonidealities could be observed. A barrier of about 300 meV is present for electron flow at the absorberbuffer heterojunction leading to a strong crossover behavior between dark and illuminated currentvoltage curves. In addition, a barrier of about 130 meV is present at the Moabsorber contact, which could be reduced to 15 meV by inclusion of a TiN interlayer. Admittance spectroscopy results on the devices with the TiN backside contact show a defect level with an activation energy of 170 meV. Using all parameters extracted by the different characterization methods for simulations of the two-diode model including injection and recombination currents, we come to the conclusion that our devices are limited by the large recombination current in the depletion region. Potential fluctuations are present in the devices as well, but they do not seem to have a special degrading effect on the devices, besides a probable reduction in minority carrier lifetime through enhanced recombination through the band tail defects.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000353524800026 Publication Date 2014-12-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2156-3381;2156-3403; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.712 Times cited 13 Open Access
Notes ; ; Approved Most recent IF: 3.712; 2015 IF: 3.165
Call Number c:irua:123717 Serial 1734
Permanent link to this record
 
 
Author Tarakina, N.V.; Denisova, T.A.; Maksimova, L.G.; Baklanova, Y.V.; Tyutyunnik, A.P.; Berger, I.F.; Zubkov, V.G.; Van Tendeloo, G.
Title Investigation of stacking disorder in Li2SnO3 Type (up) A1 Journal article
Year 2009 Publication Zeitschrift für Kristallographie Abbreviated Journal
Volume Issue S:30 Pages 375-380
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A crystal structure investigation of the low temperature Li2SnO3 modification has been carried out. X-ray, neutron powder and electron diffraction data showed that this compound crystallizes in a monoclinic unit cell with parameters: a = 5.3033(2)Å, b = 9.1738(3)Å, c = 10.0195(2)Å, β ~ 100.042(2)º and has stacking disorder along the c-axis. Simulation of diffraction patterns with different stacking faults mainly reveal the presence of rotational stacking faults with a probability of about 40% .
Address
Corporate Author Thesis
Publisher Place of Publication München Editor
Language Wos 000271325700024 Publication Date 2009-08-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0930-486X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 16 Open Access
Notes Iap Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:79987 Serial 1735
Permanent link to this record
 
 
Author Stevens, W.J.J.; Lebeau, K.; Mertens, M.; Van Tendeloo, G.; Cool, P.; Vansant, E.F.
Title Investigation of the morphology of the mesoporous SBA-16 and SBA-15 materials Type (up) A1 Journal article
Year 2006 Publication The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical Abbreviated Journal J Phys Chem B
Volume 110 Issue 18 Pages 9183-9187
Keywords A1 Journal article; Laboratory of adsorption and catalysis (LADCA); Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos 000237451300042 Publication Date 2006-05-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1520-6106;1520-5207; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.177 Times cited 109 Open Access
Notes Approved Most recent IF: 3.177; 2006 IF: 4.115
Call Number UA @ lucian @ c:irua:58264 Serial 1738
Permanent link to this record
 
 
Author Bogaerts, A.; Gijbels, R.
Title The ion- and atom-induced secondary electron emission yield: numerical study for the effect of clean and dirty cathode surfaces Type (up) A1 Journal article
Year 2002 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T
Volume 11 Issue Pages 27-36
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Institute of Physics Place of Publication Bristol Editor
Language Wos 000174336300003 Publication Date 2002-08-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.302 Times cited 51 Open Access
Notes Approved Most recent IF: 3.302; 2002 IF: 1.816
Call Number UA @ lucian @ c:irua:40184 Serial 1739
Permanent link to this record
 
 
Author Kalitzova, M.; Peeva, A.; Ignatova, V.; Lebedev, O.I.; Zollo, G.; Vitali, G.
Title Ion beam synthesis of Te and Bi nanoclusters in silicon: the effect of post-implantation high frequency electromagnetic field Type (up) A1 Journal article
Year 2006 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms Abbreviated Journal Nucl Instrum Meth B
Volume 242 Issue Pages 209-213
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000236225200056 Publication Date 2005-09-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.109 Times cited 1 Open Access
Notes Approved Most recent IF: 1.109; 2006 IF: 0.946
Call Number UA @ lucian @ c:irua:58051 Serial 1741
Permanent link to this record
 
 
Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J.
Title Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization Type (up) A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr Abbreviated Journal Nucl Instrum Meth B
Volume 112 Issue 1-4 Pages 325-329
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
Address
Corporate Author Thesis
Publisher Elsevier science bv Place of Publication Amsterdam Editor
Language Wos A1996UW20100069 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited 9 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95886 Serial 1742
Permanent link to this record
 
 
Author de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R.
Title Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks Type (up) A1 Journal article
Year 2003 Publication Applied surface science Abbreviated Journal Appl Surf Sci
Volume 203 Issue Pages 523-526
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract We analyzed ultra-thin ZrO2/SiO2/Si gate dielectrics under post-deposition anneals in dry O-2 at temperatures from 500 to 700 degreesC. TOF-SIMS profiling of ZrO2/SiO2/Si stacks is hampered by many sputter induced artifacts. The depletion of oxygen leads to a decrease in SIMS intensities. However, preferential sputtering is accompanied by transport of the depleted species towards the surface. Due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. Either normal or radiation-enhanced diffusion transports oxygen back to the surface. Simultaneously also segregation of zirconium towards and through the interface is observed, resulting in a large zirconium tail in the underlying silicon substrate. (C) 2002 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Elsevier science bv Place of Publication Amsterdam Editor
Language Wos 000180527300119 Publication Date 2002-12-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.387 Times cited 15 Open Access
Notes Approved Most recent IF: 3.387; 2003 IF: 1.284
Call Number UA @ lucian @ c:irua:51975 Serial 1743
Permanent link to this record
 
 
Author van Oeffelen, L.; Van Roy, W.; Idrissi, H.; Charlier, D.; Lagae, L.; Borghs, G.
Title Ion current rectification, limiting and overlimiting conductances in nanopores Type (up) A1 Journal article
Year 2015 Publication PLoS ONE Abbreviated Journal Plos One
Volume 10 Issue 10 Pages e0124171
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Previous reports on Poisson-Nernst-Planck (PNP) simulations of solid-state nanopores have focused on steady state behaviour under simplified boundary conditions. These are Neumann boundary conditions for the voltage at the pore walls, and in some cases also Donnan equilibrium boundary conditions for concentrations and voltages at both entrances of the nanopore. In this paper, we report time-dependent and steady state PNP simulations under less restrictive boundary conditions, including Neumann boundary conditions applied throughout the membrane relatively far away from the nanopore. We simulated ion currents through cylindrical and conical nanopores with several surface charge configurations, studying the spatial and temporal dependence of the currents contributed by each ion species. This revealed that, due to slow co-diffusion of oppositely charged ions, steady state is generally not reached in simulations or in practice. Furthermore, it is shown that ion concentration polarization is responsible for the observed limiting conductances and ion current rectification in nanopores with asymmetric surface charges or shapes. Hence, after more than a decade of collective research attempting to understand the nature of ion current rectification in solid-state nanopores, a relatively intuitive model is retrieved. Moreover, we measured and simulated current-voltage characteristics of rectifying silicon nitride nanopores presenting overlimiting conductances. The similarity between measurement and simulation shows that overlimiting conductances can result from the increased conductance of the electric double-layer at the membrane surface at the depletion side due to voltage-induced polarization charges.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000354916100012 Publication Date 2015-05-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1932-6203; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.806 Times cited 11 Open Access
Notes Approved Most recent IF: 2.806; 2015 IF: 3.234
Call Number c:irua:126366 Serial 1744
Permanent link to this record
 
 
Author Neyts, E.C.; Bogaerts, A.
Title Ion irradiation for improved graphene network formation in carbon nanotube growth Type (up) A1 Journal article
Year 2014 Publication Carbon Abbreviated Journal Carbon
Volume 77 Issue Pages 790-795
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Ion irradiation of carbon nanotubes very often leads to defect formation. However, we have recently shown that Ar ion irradiation in a limited energy window of 1025 eV may enhance the initial cap nucleation process, when the carbon network is in contact with the metal nanocatalyst. Here, we employ reactive molecular dynamics simulations to demonstrate that ion irradiation in a higher energy window of 1035 eV may also heal network defects after the nucleation stage through a non-metal-mediated mechanism, when the carbon network is no longer in contact with the metal nanocatalyst. The results demonstrate the possibility of beneficially utilizing ions in e.g. plasma-enhanced chemical vapour deposition of carbon nanotubes.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000340689400083 Publication Date 2014-06-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0008-6223; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 6.337 Times cited 7 Open Access
Notes Approved Most recent IF: 6.337; 2014 IF: 6.196
Call Number UA @ lucian @ c:irua:118062 Serial 1745
Permanent link to this record
 
 
Author He, Z.; Maurice, J.-L.; Gohier, A.; Lee, C.S.; Pribat, D.; Cojocaru, C.S.
Title Iron catalysts for the growth of carbon nanofibers : Fe, Fe3C or both? Type (up) A1 Journal article
Year 2011 Publication Chemistry of materials Abbreviated Journal Chem Mater
Volume 23 Issue 24 Pages 5379-5387
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Iron is a widely used catalyst for the growth of carbon nanotubes (CNTs) or carbon nanofibers (CNFs) by catalytic chemical vapor deposition. However, both Fe and FeC compounds (generally, Fe3C) have been found to catalyze the growth of CNTs/CNFs, and a comparison study of their respective catalytic activities is still missing. Furthermore, the control of the crystal structure of iron-based catalysts, that is α-Fe or Fe3C, is still a challenge, which not only obscures our understanding of the growth mechanisms of CNTs/CNFs, but also complicates subsequent procedures, such as the removal of catalysts for better industrial applications. Here, we show a partial control of the phase of iron catalysts (α-Fe or Fe3C), obtained by varying the growth temperatures during the synthesis of carbon-based nanofibers/nanotubes in a plasma-enhanced chemical vapor deposition reactor. We also show that the structure of CNFs originating from Fe3C is bamboo-type, while that of CNFs originating from Fe is not. Moreover, we directly compare the growth rates of carbon-based nanofibers/nanotubes during the same experiments and find that CNFs/CNTs grown by α-Fe nanoparticles are longer than CNFs grown from Fe3C nanoparticles. The influence of the type of catalyst on the growth of CNFs is analyzed and the corresponding possible growth mechanisms, based on the different phases of the catalysts, are discussed.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos 000298197300014 Publication Date 2011-11-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0897-4756;1520-5002; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 9.466 Times cited 91 Open Access
Notes Approved Most recent IF: 9.466; 2011 IF: 7.286
Call Number UA @ lucian @ c:irua:94297 Serial 1748
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Author van Dyck, D.; Van Aert, S.; den Dekker, A.J.; van den Bos, A.
Title Is atomic resolution transmission electron microscopy able to resolve and refine amorphous structures? Type (up) A1 Journal article
Year 2003 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 98 Issue Pages 27-42
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000186831500003 Publication Date 2003-04-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 26 Open Access
Notes Approved Most recent IF: 2.843; 2003 IF: 1.665
Call Number UA @ lucian @ c:irua:47516 Serial 1749
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Author Schattschneider, P.; Löffler, S.; Stöger-Pollach, M.; Verbeeck, J.
Title Is magnetic chiral dichroism feasible with electron vortices? Type (up) A1 Journal article
Year 2014 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 136 Issue Pages 81-85
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We discuss the feasibility of detecting magnetic transitions with focused electron vortex probes, suggested by selection rules for the magnetic quantum number. We theoretically estimate the dichroic signal strength in the L2,3 edge of ferromagnetic d metals. It is shown that under realistic conditions, the dichroic signal is undetectable for nanoparticles larger than View the MathML source. This is confirmed by a key experiment with nanometer-sized vortices.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000327884700011 Publication Date 2013-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 64 Open Access
Notes Countatoms; Vortex; Esteem2; esteem2jra3 ECASJO; Approved Most recent IF: 2.843; 2014 IF: 2.436
Call Number UA @ lucian @ c:irua:110952UA @ admin @ c:irua:110952 Serial 1750
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Author Idrissi, H.; Ryelandt, L.; Veron, M.; Schryvers, D.; Jacques, P.J.
Title Is there a relationship between the stacking fault character and the activated mode of plasticity of FeMn-based austenitic steels? Type (up) A1 Journal article
Year 2009 Publication Scripta materialia Abbreviated Journal Scripta Mater
Volume 60 Issue 11 Pages 941-944
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract By changing the testing temperature, an austenitic FeMnAlSi alloy presents either å-martensite transformation or mechanical twinning during straining. In order to understand the nucleation and growth mechanisms involved in both phenomena, defects and particularly stacking faults, were characterized by transmission electron microscopy. It is observed that the character of the stacking faults also changes (from extrinsic to intrinsic) together with the temperature and the activated mode of plasticity.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000265359900005 Publication Date 2009-02-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.747 Times cited 84 Open Access
Notes Iap Approved Most recent IF: 3.747; 2009 IF: 2.949
Call Number UA @ lucian @ c:irua:77276 Serial 1751
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Author Tafuri, F.; Granozio, F.M.; Carillo, F.; Lombardi, F.; Di Uccio, U.S.; Verbist, K.; Lebedev, O.; Van Tendeloo, G.
Title Josephson phenomenology and microstructure of YBaCuO artificial grain boundaries characterized by misalignment of the c-axes Type (up) A1 Journal article
Year 1999 Publication Physica: C : superconductivity Abbreviated Journal Physica C
Volume 327 Issue Pages 63-71
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract YBa(2)Cu(3)O(7-delta) (YBCO) grain boundaries characterized by a misalignment of the c-axes (45 degrees c-axis tilt or 45 degrees c-axis twist) have been obtained by employing a recently implemented biepitaxial technique. Junctions based on these grain boundaries exhibit good Josephson properties useful for applications. High values of the I(C)R(N) product and a Fraunhofer-like dependence of the critical current on the magnetic field, differently from traditional biepitaxial junctions, have been obtained. The correlation between transport properties and microstructure has been investigated by Transmission Electron Microscopy (TEM), which was also performed on previously measured junctions. The presence of atomically clean basal plane (BP) faced tilt boundaries, among other types of interfaces, has been shown. The possibility of selecting these kinds of boundaries by controlling film growth, and their possible advantages in terms of reproducibility and uniformity of the junction properties an discussed. The possibility of employing these junctions to explore the symmetry of the order parameter is also discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000084325700008 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.404 Times cited 7 Open Access
Notes Approved Most recent IF: 1.404; 1999 IF: 1.114
Call Number UA @ lucian @ c:irua:95180 Serial 1752
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Author Badalyan, S.M.; Peeters, F.M.
Title Joule heat in a two-dimensional electron gas exposed to a normal non-homogeneous magnetic field of a 'chess' configuration Type (up) A1 Journal article
Year 2002 Publication Physica: B : condensed matter Abbreviated Journal Physica B
Volume 316 Issue Pages 216-218
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We have calculated analytically the spatial distribution of the electric field and current density, and obtained the Joule heat generation rate in a two-dimensional electron gas (2DEG) subjected to a non-homogeneous magnetic field of a 'chess' configuration. The generation of the Joule heat from the 2DEG is mainly concentrated near the singular corners of each 'chess' field and tends to zero in other corners. (C) 2002 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000176297400047 Publication Date 2002-10-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.386 Times cited Open Access
Notes Approved Most recent IF: 1.386; 2002 IF: 0.609
Call Number UA @ lucian @ c:irua:94925 Serial 1753
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Author Buffière, M.; Brammertz, G.; Sahayaraj, S.; Batuk, M.; Khelifi, S.; Mangin, D.; El Mel, A.A.; Arzel, L.; Hadermann, J.; Meuris, M.; Poortmans, J.;
Title KCN chemical etch for interface engineering in Cu2ZnSnSe4 solar cells Type (up) A1 Journal article
Year 2015 Publication ACS applied materials and interfaces Abbreviated Journal Acs Appl Mater Inter
Volume 7 Issue 7 Pages 14690-14698
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The removal of secondary phases from the surface of the kesterite crystals is one of the major challenges to improve the performances of Cu2ZnSn(S,Se)(4) (CZTSSe) thin film solar cells. In this Contribution, the KCN/KOH Chemical etching approach, originally developed for the removal of CuxSe phases in Cu(In,Ga)(S,Se)(2) thin films) is applied to CZTSe absorbers exhibiting various chemical compositions. Two distinct electrical behaviors were observed on CZTSe/CdS solar cells after treatment: (i) the improvement of the fill factor (FF) after 30 s of etching for the CZTSe absorbers showing initially a distortion of the electrical characteristic; (ii) the progressive degradation Of the FF after long treatment time for all Cu-poor CZTSe solar cell samples. The first effect can be attributed to the action of KCN on the absorber, that is found to clean the absorber free surface from most of the secondary phases surrounding the kesterite grains (e.g., Se-0, CuxSe, SnSex, SnO2, Cu2SnSe3 phases, excepting the ZnSe-based phases). The second observation was identified as a consequence of the preferential etching of Se, Sn, and Zn from the CZTSe surface by the KOH solution, combined with the modification of the alkali content of the absorber. The formation of a Cu-rich shell at the absorber/buffer layer interface, leading to the increase of the recombination rate at the interface, and the increase in the doping of the absorber layer after etching are found to be at the origin of the deterioration of the FF of the solar cells.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000358395200019 Publication Date 2015-06-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1944-8244;1944-8252; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 7.504 Times cited 34 Open Access
Notes Approved Most recent IF: 7.504; 2015 IF: 6.723
Call Number c:irua:127153 Serial 1755
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Author Berdiyorov, G.R.; Milošević, M.V.; Peeters, F.M.
Title Kinematic vortex-antivortex lines in strongly driven superconducting stripes Type (up) A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 19 Issue 18 Pages 184506,1-184506,8
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract In the framework of the time-dependent Ginzburg-Landau formalism, we study the resistive state of a submicron superconducting stripe in the presence of a longitudinal current. Sufficiently strong current leads to phase slippage between the leads, which is manifested as oppositely charged kinematic vortices moving in opposite directions perpendicular to applied drive. Depending on the distribution of superconducting current density the vortex-antivortex either nucleate in the middle of the stripe and are expelled laterally or enter on opposite sides of the sample and are driven together to annihilation. We distinguish between the two scenarios as a function of relevant parameters and show how the creation/annihilation point of the vortex-antivortex and their individual velocity can be manipulated by applied magnetic field and current.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000266501200091 Publication Date 2009-05-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 75 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:77400 Serial 1756
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Author Yan, M.; Bogaerts, A.; Gijbels, R.
Title Kinetic modeling of relaxation phenomena after photodetachment in a rf electronegative SiH4 discharge Type (up) A1 Journal article
Year 2001 Publication Physical review : E : statistical physics, plasmas, fluids, and related interdisciplinary topics Abbreviated Journal Phys Rev E
Volume 63 Issue 2Part 2 Pages
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The global relaxation process after pulsed laser induced photodetachment in a rf electronegative SIH4 discharge is studied by a self-consistent kinetic one-dimensional particle-in-cell-Monte Carlo model. Our results reveal a comprehensive physical picture of the relaxation process, including the main plasma variables, after a perturbation up to the full recovery of the steady state. A strong influence of the photodetachment on the discharge is found, which results from an increase of the electron density, leading to a weaker bulk field, and hence to a drop in the high energy tail of the electron energy distribution function (EEDF), a reduction of the reaction rates of electron impact attachment and ionization, and a subsequent decrease of the positive and negative ion densities. All the plasma quantities related to electrons recover synchronously. The recovery time of the ion densities is about 1-2 orders of magnitude longer than that of the electrons due to different recovery mechanisms. The modeled behavior of all the charged particles agrees very well with experimental results from the literature. In addition, our work clarifies some unclear processes assumed in the literature, such as the relaxation of the EEDF, the evolution of the electric field, and the recovery of negative ions.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication Woodbury (NY) Editor
Language Wos 000167022500057 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-651X;1095-3787; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.366 Times cited 4 Open Access
Notes Approved Most recent IF: 2.366; 2001 IF: 2.235
Call Number UA @ lucian @ c:irua:34148 Serial 1757
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Author Van Gaens, W.; Bogaerts, A.
Title Kinetic modelling for an atmospheric pressure argon plasma jet in humid air Type (up) A1 Journal article
Year 2013 Publication Journal of physics: D: applied physics Abbreviated Journal J Phys D Appl Phys
Volume 46 Issue 27 Pages 275201-275253
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract A zero-dimensional, semi-empirical model is used to describe the plasma chemistry in an argon plasma jet flowing into humid air, mimicking the experimental conditions of a setup from the Eindhoven University of Technology. The model provides species density profiles as a function of the position in the plasma jet device and effluent. A reaction chemistry set for an argon/humid air mixture is developed, which considers 84 different species and 1880 reactions. Additionally, we present a reduced chemistry set, useful for higher level computational models. Calculated species density profiles along the plasma jet are shown and the chemical pathways are explained in detail. It is demonstrated that chemically reactive H, N, O and OH radicals are formed in large quantities after the nozzle exit and H2, O2(1Δg), O3, H2O2, NO2, N2O, HNO2 and HNO3 are predominantly formed as 'long living' species. The simulations show that water clustering of positive ions is very important under these conditions. The influence of vibrational excitation on the calculated electron temperature is studied. Finally, the effect of varying gas temperature, flow speed, power density and air humidity on the chemistry is investigated.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000320854700009 Publication Date 2013-06-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3727;1361-6463; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.588 Times cited 115 Open Access
Notes Approved Most recent IF: 2.588; 2013 IF: 2.521
Call Number UA @ lucian @ c:irua:108725 Serial 1758
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