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Author |
Title  |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
Sivek, J.; Sahin, H.; Partoens, B.; Peeters, F.M. |
Adsorption and absorption of boron, nitrogen, aluminum, and phosphorus on silicene : stability and electronic and phonon properties |
2013 |
Physical review : B : condensed matter and materials physics |
87 |
169 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Dixit, H.; Saniz, R.; Lamoen, D.; Partoens, B. |
Accurate pseudopotential description of the GW bandstructure of ZnO |
2011 |
Computer physics communications |
182 |
18 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Saniz, R.; Vercauteren, S.; Lamoen, D.; Partoens, B.; Barbiellini, B. |
Accurate description of the van der Waals interaction of an electron-positron pair with the surface of a topological insulator |
2014 |
Journal of physics : conference series |
505 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Schoeters, B.; Leenaerts, O.; Pourtois, G.; Partoens, B. |
Ab-initio study of the segregation and electronic properties of neutral and charged B and P dopants in Si and Si/SiO2 nanowires |
2015 |
Journal of applied physics |
118 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Sarmadian, N.; Saniz, R.; Partoens, B.; Lamoen, D. |
Ab initio study of shallow acceptors in bixbyite V2O3 |
2015 |
Journal of applied physics |
117 |
3 |
UA library record; WoS full record; WoS citing articles |
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|
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Peelaers, H.; Durgun, E.; Partoens, B.; Bilc, D.I.; Ghosez, P.; Van de Walle, C.G.; Peeters, F.M. |
Ab initio study of hydrogenic effective mass impurities in Si nanowires |
2017 |
Journal of physics : condensed matter |
29 |
1 |
UA library record; WoS full record; WoS citing articles |
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Saniz, R.; Xu, Y.; Matsubara, M.; Amini, M.N.; Dixit, H.; Lamoen, D.; Partoens, B. |
A simplified approach to the band gap correction of defect formation energies : Al, Ga, and In-doped ZnO |
2013 |
The journal of physics and chemistry of solids |
74 |
36 |
UA library record; WoS full record; WoS citing articles |
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Momot, A.; Amini, M.N.; Reekmans, G.; Lamoen, D.; Partoens, B.; Slocombe, D.R.; Elen, K.; Adriaensens, P.; Hardy, A.; Van Bael, M.K. |
A novel explanation for the increased conductivity in annealed Al-doped ZnO: an insight into migration of aluminum and displacement of zinc |
2017 |
Physical chemistry, chemical physics |
19 |
26 |
UA library record; WoS full record; WoS citing articles |
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Dabaghmanesh, S.; Sarmadian, N.; Neyts, E.C.; Partoens, B. |
A first principles study of p-type defects in LaCrO3 |
2017 |
Physical chemistry, chemical physics |
19 |
16 |
UA library record; WoS full record; WoS citing articles |
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Mayda, S.; Monico, L.; Krishnan, D.; De Meyer, S.; Cotte, M.; Garrevoet, J.; Falkenberg, G.; Sandu, I.C.A.; Partoens, B.; Lamoen, D.; Romani, A.; Miliani, C.; Verbeeck, J.; Janssens, K. |
A combined experimental and computational approach to understanding CdS pigment oxidation in a renowned early 20th century painting |
2023 |
Chemistry of materials |
35 |
|
UA library record; WoS full record |
|
|
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Čukarić, N.A.; Tadić, M.Z.; Partoens, B.; Peeters, F.M. |
30-band k\cdot p model of electron and hole states in silicon quantum wells |
2013 |
Physical review : B : condensed matter and materials physics |
88 |
10 |
UA library record; WoS full record; WoS citing articles |
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