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Author Schryvers, D.; Tirry, W.; Yang, Z. openurl 
  Title Advanced TEM investigations on Ni-Ti shape memory material: strain and concentration gradients surrounding Ni4Ti3 precipitates Type P1 Proceeding
  Year 2005 Publication Abbreviated Journal  
  Volume Issue Pages 329-338  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract Lattice deformations and concentration gradients surrounding Ni4Ti3 precipitates grown by appropriate annealing in a Ni51Ti49 B2 austenite matrix are determined by a combination of TEM techniques. Quantitative Fourier analysis of HRTEM images reveals a deformed nanoscale region with lattice deformations up to 2% while EELS and EDX indicate a Ni depleted zone up to 150 nm away from the matrix-precipitate interface.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication s.l. Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1-55899-790-3 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:55688 Serial 75  
Permanent link to this record
 

 
Author Schryvers, D. openurl 
  Title Advanced TEM studies of martensite and related phase transformations Type H1 Book chapter
  Year 1999 Publication Abbreviated Journal  
  Volume Issue Pages 947-956  
  Keywords H1 Book chapter; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication s.l. Editor  
  Language Wos 000086479100208 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:48373 Serial 76  
Permanent link to this record
 

 
Author Wang, A.; Turner, S.; Van Aert, S.; van Dyck, D. pdf  url
doi  openurl
  Title An alternative approach to determine attainable resolution directly from HREM images Type A1 Journal article
  Year 2013 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 133 Issue Pages 50-61  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract The concept of resolution in high-resolution electron microscopy (HREM) is the power to resolve neighboring atoms. Since the resolution is related to the width of the point spread function of the microscope, it could in principle be determined from the image of a point object. However, in electron microscopy there are no ideal point objects. The smallest object is an individual atom. If the width of an atom is much smaller than the resolution of the microscope, this atom can still be considered as a point object. As the resolution of the microscope enters the sub-Å regime, information about the microscope is strongly entangled with the information about the atoms in HREM images. Therefore, we need to find an alternative method to determine the resolution in an object-independent way. In this work we propose to use the image wave of a crystalline object in zone axis orientation. Under this condition, the atoms of a column act as small lenses so that the electron beam channels through the atom column periodically. Because of this focusing, the image wave of the column can be much more peaked than the constituting atoms and can thus be a much more sensitive probe to measure the resolution. Our approach is to use the peakiness of the image wave of the atom column to determine the resolution. We will show that the resolution can be directly linked to the total curvature of the atom column wave. Moreover, we can then directly obtain the resolution of the microscope given that the contribution from the object is known, which is related to the bounding energy of the atom. The method is applied on an experimental CaTiO3 image wave.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000324471800007 Publication Date 2013-05-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 2.843 Times cited (up) Open Access  
  Notes FWO; Hercules; Esteem2; esteem2_jra2 Approved Most recent IF: 2.843; 2013 IF: 2.745  
  Call Number UA @ lucian @ c:irua:109919 Serial 90  
Permanent link to this record
 

 
Author Hadermann, J.; Abakumov, A.M.; Van Tendeloo, G.; Shpanchenko, R.V.; Oleinikov, P.N.; Antipov, E.V. openurl 
  Title Anion ordering in fluorinated La2CuO4 Type H1 Book chapter
  Year 1999 Publication Abbreviated Journal  
  Volume Issue Pages 133-138  
  Keywords H1 Book chapter; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication s.l. Editor  
  Language Wos 000079308200022 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:29278 Serial 122  
Permanent link to this record
 

 
Author Van Aert, S. pdf  openurl
  Title Atomen in 3D : Antwerpenaren brengen atomaire structuur nanodeeltjes in beeld Type Newspaper/Magazine/blog article
  Year 2011 Publication Chemie magazine Abbreviated Journal  
  Volume 7 Issue 3 Pages 9  
  Keywords Newspaper/Magazine/blog article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0379-7651 ISBN Additional Links UA library record  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:94122 Serial 163  
Permanent link to this record
 

 
Author Van Tendeloo, G.; Schryvers, D. openurl 
  Title Atomic structure of alloys close to phase transitions Type A1 Journal article
  Year 2000 Publication Nucleation and growth processes in materials Abbreviated Journal  
  Volume 580 Issue Pages 283-292  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000165506200043 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:48377 Serial 197  
Permanent link to this record
 

 
Author Mahieu, S.; Ghekiere, P.; de Winter, G.; de Gryse, R.; Depla, D.; Lebedev, O.I. openurl 
  Title Biaxially aligned yttria stabilized zirconia and titanium nitride layers deposited by unbalanced magnetron sputtering Type A1 Journal article
  Year 2005 Publication Diffusion and defect data : solid state data : part B : solid state phenomena T2 – 2nd International Conference on Texture and Anisotropy of Polycrystals, JUL 07-09, 2004, Metz, FRANCE Abbreviated Journal  
  Volume 105 Issue Pages 447-452  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Control of the texture and the biaxial alignment of sputter deposited films has provoked a great deal of interest due to its technological importance. indeed, many physical properties of thin films are influenced by the biaxial alignment. In this context, extensive research has been established to understand the growth mechanism of biaxially aligned Yttria Stabilized Zirconia (YSZ) as a buffer layer for high temperature superconducting copper oxides. In this work, the growth mechanism in general and the mechanism responsible of the biaxial alignment in detail were investigated for thin films of YSZ and TiN deposited by unbalanced magnetron sputtering using non-aligned polycrystalline stainless steel substrates. The mechanism responsible for the preferential out-of-plane alignment has been investigated by performing depositions on a non-tilted substrate. However, to study the in-plane alignment a tilted substrate was used. The microstructure of the deposited layers was characterised by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The crystallographic alignment has been investigated by X-ray diffraction (XRD) (angular scans and pole figures) and by Selective Area Diffraction (SAD). It was observed that the deposited layers show a zone T or zone II structure and the layers with a zone T structure consist of faceted grains. There seems to be a correlation between the crystal habit of these faceted grains and the measured biaxial alignment. A model for the preferential out-of-plane orientation, the in-plane alignment and the correlation between the microstructure and the biaxial alignment is proposed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Vaduz Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 3-908451-09-4 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103190 Serial 230  
Permanent link to this record
 

 
Author Schowalter, M.; Rosenauer, A.; Titantah, J.T.; Lamoen, D. openurl 
  Title Calculation of Debye-Waller temperature factors for GaAs Type A1 Journal article
  Year 2008 Publication Springer proceedings in physics Abbreviated Journal  
  Volume 120 Issue Pages 195-198  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:73966 Serial 266  
Permanent link to this record
 

 
Author Biró, L.P.; Khanh, N.Q.; Horváth, Z.E.; Vértesy, Z.; Kocsonya, A.; Konya, Z.; Osváth, Z.; Koós, A.; Guylai, J.; Zhang, X.B.; Van Tendeloo, G.; Fonseca, A.; Nagy, J.B. openurl 
  Title Catalyst traces after chemical purification in CVD grown carbon nanotubes Type P3 Proceeding
  Year 2001 Publication Abbreviated Journal  
  Volume Issue Pages 183-186  
  Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher AIP Conference Proceedings Place of Publication s.l. Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54778 Serial 288  
Permanent link to this record
 

 
Author Aichele, T.; Robin, I.-C.; Bougerol, C.; André, R.; Tatarenko, S.; Van Tendeloo, G. pdf  doi
openurl 
  Title CdSe quantum dot formation induced by amorphous Se Type A1 Journal article
  Year 2007 Publication Surface science : a journal devoted to the physics and chemistry of interfaces T2 – International Conference on NANO-Structures Self Assembling, JUL 02-06, 2006, Aix en Provence, FRANCE Abbreviated Journal Surf Sci  
  Volume 601 Issue 13 Pages 2664-2666  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The mechanism allowing the transition from a two-dimensional strained layer of CdSe on ZnSe to self-assembled islands induced by the use of amorphous selenium is still not fully understood. For a better understanding, atomic force microscopy and transmission electron microscopy studies were performed on CdSe films with a thickness close to that for quantum dot formation. Below this thickness, the sample surface results in undulations along the [110] crystal direction, while few quantum dots are situated in the wave valleys. Plan view transmission electron microscopy studies reveal a strong anisotropy of the islands and show that the Se desorption conditions are crucial. (C) 2006 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000248030100027 Publication Date 2006-12-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 2.062 Times cited (up) Open Access  
  Notes Approved Most recent IF: 2.062; 2007 IF: 1.855  
  Call Number UA @ lucian @ c:irua:102668 Serial 304  
Permanent link to this record
 

 
Author Blank, D.H.A.; Rijnders, A.J.H.M.; Verhoeven, M.A.J.; Bergs, R.M.H.; Rogalla, H.; Verbist, K.; Lebedev, O.; Van Tendeloo, G. doi  openurl
  Title Characterisation of multilayer ramp-type REBa2Cu3O7-\delta structures by scanning probe microscopy and high-resolution electron microscopy Type A1 Journal article
  Year 1997 Publication Journal of alloys and compounds T2 – Symposium on High Temperature Superconductor Thin Films, Growth, Mechanisms, Interfaces, Multilayers, at the 1996 Spring Meeting of the European-Materials-Society, June 04-07, 1996, Strasbourg, France Abbreviated Journal J Alloy Compd  
  Volume 251 Issue 1-2 Pages 206-208  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract We studied the morphology of ramps in REBa2CU3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TIN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence, Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBa2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, con even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier Science Place of Publication Lausanne Editor  
  Language Wos A1997XM34000046 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-8388; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 3.133 Times cited (up) Open Access  
  Notes Approved Most recent IF: 3.133; 1997 IF: 1.035  
  Call Number UA @ lucian @ c:irua:95868 Serial 310  
Permanent link to this record
 

 
Author Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. openurl 
  Title Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation Type A1 Journal article
  Year 2001 Publication Institute of physics conference series Abbreviated Journal  
  Volume Issue 169 Pages 481-484  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0818-4 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:95163 Serial 311  
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Author Ahonen, P.P.; Kauppinen, E.I.; Tapper, U.; Nenonen, P.; Joubert, J.C.; Deschanvres, J.L.; Van Tendeloo, G. openurl 
  Title Characterization of MO derived nanostructured titania powders Type A3 Journal article
  Year 1998 Publication Electron microscopy: vol. 2 Abbreviated Journal  
  Volume Issue Pages 373-374  
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000077019900183 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:25672 Serial 326  
Permanent link to this record
 

 
Author Mortet, V.; Zhang, L.; Echert, M.; Soltani, A.; d' Haen, J.; Douheret, O.; Moreau, M.; Osswald, S.; Neyts, E.; Troadec, D.; Wagner, P.; Bogaerts, A.; Van Tendeloo, G.; Haenen, K. doi  openurl
  Title Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition Type A3 Journal article
  Year 2009 Publication Materials Research Society symposium proceedings Abbreviated Journal  
  Volume Issue 1203 Pages  
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Nanocrystalline diamond films have generated much interested due to their diamond-like properties and low surface roughness. Several techniques have been used to obtain a high re-nucleation rate, such as hydrogen poor or high methane concentration plasmas. In this work, the properties of nano-diamond films grown on silicon substrates using a continuous DC bias voltage during the complete duration of growth are studied. Subsequently, the layers were characterised by several morphological, structural and optical techniques. Besides a thorough investigation of the surface structure, using SEM and AFM, special attention was paid to the bulk structure of the films. The application of FTIR, XRD, multi wavelength Raman spectroscopy, TEM and EELS yielded a detailed insight in important properties such as the amount of crystallinity, the hydrogen content and grain size. Although these films are smooth, they are under a considerable compressive stress. FTIR spectroscopy points to a high hydrogen content in the films, while Raman and EELS indicate a high concentration of sp2 carbon. TEM and EELS show that these films consist of diamond nano-grains mixed with an amorphous sp2 bonded carbon, these results are consistent with the XRD and UV Raman spectroscopy data.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Wuhan Editor  
  Language Wos Publication Date 2010-03-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1946-4274; ISBN Additional Links UA library record  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:81646 Serial 327  
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Author van Landuyt, J.; Van Tendeloo, G. openurl 
  Title Charcaterization by high-resolution transmission electron microscopy Type H3 Book chapter
  Year 1998 Publication Abbreviated Journal  
  Volume Issue Pages 187-190  
  Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Stt Place of Publication Den Haag Editor  
  Language Wos A1990DC39700012 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:29685 Serial 335  
Permanent link to this record
 

 
Author Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. pdf  doi
openurl 
  Title Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy Type A1 Journal article
  Year 2001 Publication Materials science in semiconductor processing Abbreviated Journal Mat Sci Semicon Proc  
  Volume 4 Issue 1/3 Pages 109-111  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000167727200026 Publication Date 2002-10-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1369-8001; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 2.359 Times cited (up) Open Access  
  Notes Approved Most recent IF: 2.359; 2001 IF: 0.419  
  Call Number UA @ lucian @ c:irua:94967 Serial 343  
Permanent link to this record
 

 
Author De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. openurl 
  Title Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy Type P1 Proceeding
  Year 2002 Publication Abbreviated Journal  
  Volume Issue Pages 183-194  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication S.l. Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1-56677-344-X ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:94950 Serial 344  
Permanent link to this record
 

 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. openurl 
  Title Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation Type A1 Journal article
  Year 1999 Publication Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND Abbreviated Journal Inst Phys Conf Ser  
  Volume Issue 164 Pages 495-498  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000166835300106 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0650-5; 0951-3248 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:102918 Serial 376  
Permanent link to this record
 

 
Author Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. pdf  openurl
  Title Comparative study of structural properties and photoluminescence in InGaN layers with a high In content Type A1 Journal article
  Year 2000 Publication Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS Abbreviated Journal Mrs Internet J N S R  
  Volume 5 Issue s:[1] Pages art. no.-W11.38  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.  
  Address  
  Corporate Author Thesis  
  Publisher Materials research society Place of Publication Warrendale Editor  
  Language Wos 000090103600097 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1092-5783 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103471 Serial 423  
Permanent link to this record
 

 
Author Yang, Z.; Schryvers, D. openurl 
  Title Composition gradients surrounding Ni4Ti3 precipitates in a NiTi alloy studied by EELS, EFTEM and EDX Type A1 Journal article
  Year 2006 Publication International journal of applied electromagnetics and mechanics Abbreviated Journal Int J Appl Electrom  
  Volume 23 Issue 1/2 Pages 17-24  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1383-5416 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor 0.769 Times cited (up) Open Access  
  Notes Approved Most recent IF: 0.769; 2006 IF: 0.262  
  Call Number UA @ lucian @ c:irua:59610 Serial 443  
Permanent link to this record
 

 
Author Verbeeck, J.; Van Aert, S.; Zhang, L.; Haiyan, T.; Schattschneider, P.; Rosenauer, A. url  doi
openurl 
  Title Computational aspects in quantitative EELS Type A1 Journal article
  Year 2010 Publication Microscopy and microanalysis Abbreviated Journal Microsc Microanal  
  Volume 16 Issue S:2 Pages 240-241  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge, Mass. Editor  
  Language Wos Publication Date 2010-08-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1431-9276;1435-8115; ISBN Additional Links UA library record  
  Impact Factor 1.891 Times cited (up) Open Access  
  Notes Approved Most recent IF: 1.891; 2010 IF: 3.259  
  Call Number UA @ lucian @ c:irua:96556UA @ admin @ c:irua:96556 Serial 454  
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Author Moshnyaga, V.; Damaschke, B.; Shapoval, O.; Belenchuk, A.; Faupel, J.; Lebedev, O.I.; Verbeeck, J.; Van Tendeloo, G.; Mücksch, M.; Tsurkan, V.; Tidecks, R.; Samwer, K. openurl 
  Title Corrigendum: Structural phase transition at the percolation threshold in epitaxial (La0.7Ca0.3MnO3)1-x:(MgO)x nanocomposite films Type A1 Journal article
  Year 2005 Publication Nature materials Abbreviated Journal Nat Mater  
  Volume 4 Issue Pages 104  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1476-1122 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 39.737 Times cited (up) Open Access  
  Notes Approved Most recent IF: 39.737; 2005 IF: 15.941  
  Call Number UA @ lucian @ c:irua:54856 Serial 530  
Permanent link to this record
 

 
Author Lebedev, O.I.; Van Tendeloo, G. openurl 
  Title Crystalline and amorphous frameworks with giant pores: what information ca we expect from advanced TEM? Type P1 Proceeding
  Year 2008 Publication Electron microscopy and multiscale modeling: proceedings of the AIP conference proceedings Abbreviated Journal  
  Volume 999 Issue Pages 245-256  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:69153 Serial 580  
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Author van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W. openurl 
  Title Crystallography of fullerites and related graphene textures Type A1 Journal article
  Year 1994 Publication Materials science forum Abbreviated Journal  
  Volume 150/151 Issue Pages 53-64  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos A1994BC12F00004 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10001 Serial 590  
Permanent link to this record
 

 
Author Schryvers, D.; Seo, J.W.; Richard, O.; Vermeulen, W.; Potapov, P. openurl 
  Title Decomposition phenomena in Ni-Mn-Ti austenite Type H1 Book chapter
  Year 1999 Publication Abbreviated Journal  
  Volume Issue Pages 887-892  
  Keywords H1 Book chapter; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication s.l. Editor  
  Language Wos 000086479100194 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:48372 Serial 609  
Permanent link to this record
 

 
Author Schryvers, D.; Van Aert, S.; Delville, R.; Idrissi, H.; Turner, S.; Salje, E.K.H. pdf  doi
openurl 
  Title Dedicated TEM on domain boundaries from phase transformations and crystal growth Type A1 Journal article
  Year 2013 Publication Phase transitions Abbreviated Journal Phase Transit  
  Volume 86 Issue 1 Pages 15-22  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Investigating domain boundaries and their effects on the behaviour of materials automatically implies the need for detailed knowledge on the structural aspects of the atomic configurations at these interfaces. Not only in view of nearest neighbour interactions but also at a larger scale, often surpassing the unit cell, the boundaries can contain structural elements that do not exist in the bulk. In the present contribution, a number of special boundaries resulting from phase transformations or crystal growth and those recently investigated by advanced transmission electron microscopy techniques in different systems will be reviewed. These include macrotwins between microtwinned martensite plates in NiAl, austenite-single variant martensite habit planes in low hysteresis NiTiPd, nanotwins in non-textured nanostructured Pd and ferroelastic domain boundaries in CaTiO3. In all discussed cases these boundaries play an essential role in the properties of the respective materials.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York Editor  
  Language Wos 000312586700003 Publication Date 2012-12-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0141-1594;1029-0338; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.06 Times cited (up) Open Access  
  Notes Fwo; Iap Approved Most recent IF: 1.06; 2013 IF: 1.044  
  Call Number UA @ lucian @ c:irua:101222 Serial 612  
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Author Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. openurl 
  Title Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study Type P1 Proceeding
  Year 2000 Publication Abbreviated Journal  
  Volume Issue Pages 38-43  
  Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Defects in AgG tabular crystals with {111} surfaces are characterised by transmission electron microscopy (TEM) and their influence on the growth process is discussed. In the tabular crystals, twins parallel to the tabular face as well as dislocations along different directions are observed. The twins induce the tabular growth, while the dislocations do not influence the morphology. In 10 to 30% of the crystals that have been characterised, thickness growth is observed and it is shown that in all cases twins on other planes than the tabular ones are present. Two configurations occur more frequently and are analysed in detail. For the first group, twins parallel to the tabular face as well as a microtwin along a non-parallel {111} plane and ending inside the crystal are present. In the crystals of the second group only one extra non-parallel twin occurs giving rise to a bicrystal built up by a tetrahedral shaped part and a flat triangular or trapezoidal part. More complex twin configurations give rise to various, less characteristic morphologies.  
  Address  
  Corporate Author Thesis  
  Publisher Soc imaging science technology Place of Publication Springfield Editor  
  Language Wos 000183315900012 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-89208-229-1 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:95777 Serial 617  
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Author van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. openurl 
  Title Defect related growth of tabular AgCl(100) crystals: a TEM study Type P1 Proceeding
  Year 1998 Publication Abbreviated Journal  
  Volume Issue Pages 389-390  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cancun Editor  
  Language Wos 000077019900191 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:29678 Serial 618  
Permanent link to this record
 

 
Author Van Tendeloo, G.; Hervieu, M.; Chaillout, C. openurl 
  Title Defect structure of Hg-based ceramic superconductors (invited) Type P1 Proceeding
  Year 1994 Publication Sciences Abbreviated Journal  
  Volume Issue Pages 949-952  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Editions physique Place of Publication Les ulis Editor  
  Language Wos A1994BE09Y00462 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95940 Serial 621  
Permanent link to this record
 

 
Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. openurl 
  Title Direct observation of clusters in some FCC alloys by HREM Type A1 Journal article
  Year 1994 Publication Icem Abbreviated Journal  
  Volume 13 Issue Pages 447-448  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos A1994BE09X00207 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10052 Serial 716  
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