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Author Kalitzova, M.; Lebedev, O.I.; Zollo, G.; Gesheva, K.; Vlakhov, E.; Marinov, Y.; Ivanova, T.; pdf  doi
openurl 
  Title Dynamics of nanoclustering in Te+ implanted Si after application of high frequency electromagnetic field and thermal annealing Type A1 Journal article
  Year 2008 Publication Applied physics A : materials science & processing Abbreviated Journal Appl Phys A-Mater  
  Volume 91 Issue 3 Pages 515-519  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Heidelberg Editor  
  Language Wos 000255089300027 Publication Date 2008-03-13  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0947-8396;1432-0630; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.455 Times cited (up) Open Access  
  Notes Iuap Vi Approved Most recent IF: 1.455; 2008 IF: 1.884  
  Call Number UA @ lucian @ c:irua:69129 Serial 780  
Permanent link to this record
 

 
Author Van Tendeloo, G.; Amelinckx, S. openurl 
  Title Electron-microscopy and the structural studies of superconducting materials and fullerites Type P1 Proceeding
  Year 1994 Publication NATO Advanced Study Institutes series: series E : applied sciences T2 – NATO Advanced Study Institute on Materials and crystallographic Aspects, of HT(c)-Superconductivity, May 17-30, 1993, Erice, Italy Abbreviated Journal  
  Volume Issue Pages 521-538  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Kluwer Academic Place of Publication Dordrecht Editor  
  Language Wos A1994BA54N00025 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume 263 Series Issue Edition  
  ISSN 0-7923-2773-X ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95934 Serial 949  
Permanent link to this record
 

 
Author Yan, M.; Bogaerts, A.; Gijbels, R. doi  openurl
  Title Evolution of charged particle densities after laser-induced photodetachment in a strongly electronegative RF discharge Type A1 Journal article
  Year 2002 Publication IEEE transactions on plasma science Abbreviated Journal Ieee T Plasma Sci  
  Volume 30 Issue 1 Pages 132-133  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000175845900065 Publication Date 2002-11-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0093-3813; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.052 Times cited (up) Open Access  
  Notes Approved Most recent IF: 1.052; 2002 IF: 1.170  
  Call Number UA @ lucian @ c:irua:40186 Serial 1097  
Permanent link to this record
 

 
Author Bernaerts, D.; Zhang, X.; Zhang, X.; Van Tendeloo, G.; Vanlanduyt, J.; Amelinckx, S. openurl 
  Title HREM study of Rb6C60 and helical shaped carbon nanotubules Type P1 Proceeding
  Year 1994 Publication Sciences Abbreviated Journal  
  Volume Issue Pages 305-306  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Editions physique Place of Publication Les ulis Editor  
  Language Wos A1994BE09Y00147 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved COMPUTER SCIENCE, INTERDISCIPLINARY 11/104 Q1 # PHYSICS, MATHEMATICAL 1/53 Q1 #  
  Call Number UA @ lucian @ c:irua:95938 Serial 1512  
Permanent link to this record
 

 
Author van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. openurl 
  Title The influence of crystal thickness on the image tone Type A1 Journal article
  Year 2003 Publication Journal of imaging science Abbreviated Journal J Imaging Sci Techn  
  Volume 47 Issue 2 Pages 133-138  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract It is known that the neutral image tone of a developed photographic film becomes brownish when the thickness of the original silver halide tabular crystals is reduced. We investigate by electron microscopy to what extent the silver filament structure has changed and how it induces the shift in image tone. Therefore, two samples of AgBr {111} tabular crystals with average thicknesses of 160 nm and 90 nm respectively, are compared. It is shown that the dimensions and defect structure of the filaments are comparable, but that the 90 nm crystals result in a more widely spaced structure, which explains the shift in image tone on a qualitative level. The influence of the addition of an image toner, i.e., phenylmercaptotetrazole, on the filament structure is also investigated. An even more open filament structure of longer, but smaller filaments was observed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Springfield, Va Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 8750-9237; 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.348 Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:48384 Serial 1619  
Permanent link to this record
 

 
Author van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Bollen, D.; de Keyzer, R.; van Roost, C. openurl 
  Title Influence of twinning on the morphology of AgBr and AgCl microcrystals Type A1 Journal article
  Year 2001 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn  
  Volume 45 Issue Pages 349-356  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Springfield, Va Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.348 Times cited (up) Open Access  
  Notes Approved Most recent IF: 0.348; 2001 IF: NA  
  Call Number UA @ lucian @ c:irua:48381 Serial 1657  
Permanent link to this record
 

 
Author Veljkovic, D.; Tadić, M.; Peeters, F.M. openurl 
  Title Intersublevel absorption in stacked n-type doped self-assembled quantum dots Type A1 Journal article
  Year 2005 Publication Materials science forum Abbreviated Journal Mater Sci Forum  
  Volume 494 Issue Pages 37-42  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The intersublevel absorption in n-doped InAs/GaAs self-assembled quantum-dot molecules composed of three quantum dots is theoretically considered. The transition matrix elements and the transition energies are found to vary considerably with the spacer thickness. For s polarized light, decreasing the thickness of the spacer between the dots brings about crossings between the transition matrix elements, but the overall absorption is not affected by the variation of the spacer thickness. For p-polarized light and thick spacers, there are no available transitions in the single quantum dot, but a few of them emerge as a result of the electron state splitting in the stacks of coupled quantum dots, which leads to a considerable increase of the transition matrix elements, exceeding by an order of magnitude values of the matrix elements for s-polarized light.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:94746 Serial 1715  
Permanent link to this record
 

 
Author Partoens, B.; Matulis, A.; Peeters, F.M. openurl 
  Title Magnetoplasma excitations in vertically coupled quantum dot systems Type A1 Journal article
  Year 1999 Publication Materials science forum Abbreviated Journal Mater Sci Forum  
  Volume 297/298 Issue Pages 225-228  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos 000080081600043 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:24176 Serial 1920  
Permanent link to this record
 

 
Author Hervieu, M.; Michel, C.; Martin, C.; Huvé, M.; Van Tendeloo, G.; Maignan, A.; Pelloquin, D.; Goutenoire, F.; Raveau, B. openurl 
  Title Mécanismes de la non-stoechiométrie dans les nouveaux supraconducteurs à haute Tc Type A1 Journal article
  Year 1994 Publication Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation Abbreviated Journal  
  Volume 4 Issue Pages 2057-2067  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Les Ulis Editor  
  Language Wos A1994PT17900002 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1155-4320 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10041 Serial 1973  
Permanent link to this record
 

 
Author Potapov, P.L.; Schryvers, D.; Strijckers, H.; van Roost, C. openurl 
  Title Microstructural mechanism of development in photothermographic materials Type A1 Journal article
  Year 2003 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn  
  Volume 47 Issue 2 Pages 115-123  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Springfield, Va Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.348 Times cited (up) Open Access  
  Notes Approved Most recent IF: 0.348; 2003 IF: NA  
  Call Number UA @ lucian @ c:irua:48382 Serial 2046  
Permanent link to this record
 

 
Author Verbist, K.; Tafuri, F.; Granozio, F.M.; Di Chiara, S.; Van Tendeloo, G. openurl 
  Title Microstructure of artificial [100] 45 degrees twist grain boundaries in YBa2Cu3O7-delta Type P1 Proceeding
  Year 1998 Publication Electron Microscopy 1998, Vol 2: Materials Science 1 Abbreviated Journal  
  Volume Issue Pages 593-594  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000077019900291 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0565-7 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:104356 Serial 2066  
Permanent link to this record
 

 
Author Verbist, K.; Lebedev, O.I.; Verhoeven, M.A.J.; Winchern, R.; Rijnders, A.J.H.M.; Blank, D.H.A.; Tafuri, F.; Bender, H.; Van Tendeloo, G. pdf  doi
openurl 
  Title Microstructure of YBa2Cu3O7-\delta Josephson junctions in relation to their properties Type A1 Journal article
  Year 1998 Publication Superconductor science and technology Abbreviated Journal Supercond Sci Tech  
  Volume 11 Issue Pages 13-20  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000071820300005 Publication Date 2002-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048;1361-6668; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.878 Times cited (up) Open Access  
  Notes Approved Most recent IF: 2.878; 1998 IF: 2.050  
  Call Number UA @ lucian @ c:irua:22112 Serial 2075  
Permanent link to this record
 

 
Author Bogaerts, A.; Kolev, I. openurl 
  Title Modeling of magnetron and glow discharges Type A1 Journal article
  Year 2002 Publication Le vide: science, technique et applications Abbreviated Journal  
  Volume 57 Issue 304 Pages 296-307  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:40185 Serial 2128  
Permanent link to this record
 

 
Author Van Gompel, M.; Atalay, A.Y.; Gaulke, A.; Van Bael, M.K.; D'Haen, J.; Turner, S.; Van Tendeloo, G.; Vanacken, J.; Moshchalkov, V.V.; Wagner, P. pdf  doi
openurl 
  Title Morphological TEM studies and magnetoresistance analysis of sputtered Al-substituted ZnO films : the role of oxygen Type A1 Journal article
  Year 2015 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 212 Issue 212 Pages 1191-1201  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In this article, we report on the synthesis of thin, epitaxial films of the transparent conductive oxide Al:ZnO on (0001)-oriented synthetic sapphire substrates by DC sputtering from targets with a nominal 1 at.% Al substitution. The deposition was carried out at an unusually low substrate temperature of only 250 °C in argonoxygen mixtures as well as in pure argon. The impact of the processgas composition on the morphology was analysed by transmission electron microscopy, revealing epitaxial growth in all the cases with a minor impact of the process parameters on the resulting grain sizes. The transport properties resistivity, Hall effect and magnetoresistance were studied in the range from 10 to 300 K in DC and pulsed magnetic fields up to 45 T. While the carrier density and mobility are widely temperature independent, we identified a low fieldlow temperature regime in which the magnetoresistance shows an anomalous, negative behaviour. At higher fields and temperatures, the magnetoresistance exhibits a more conventional, positive curvature with increasing field strength. As a possible explanation, we propose carrier scattering at localised magnetic trace impurities and magnetic correlations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000356706500003 Publication Date 2015-04-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.775 Times cited (up) Open Access  
  Notes Methusalem project NANO; FWO; 246791 COUNTATOMS Approved Most recent IF: 1.775; 2015 IF: 1.616  
  Call Number c:irua:126732 Serial 2204  
Permanent link to this record
 

 
Author Cheng, J.P.; Zhang, X.B.; Ye, Y.; Tao, X.Y.; Liu, F.; Li, Y.; Van Tendeloo, G. openurl 
  Title Natural mineral-marine manganese nodule as a novel catalyst for the synthesis of carbon nanotubes Type A1 Journal article
  Year 2006 Publication Journal of Wuhan University of Technology: materials science edition Abbreviated Journal  
  Volume 21 Issue 1 Pages 29-31  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:57740 Serial 2286  
Permanent link to this record
 

 
Author Schryvers, D.; Ma, Y.; Toth, L.; Tanner, L.E. pdf  openurl
  Title Nucleation and growth of Ni5Al3 in austenite and martensite matrices Type P1 Proceeding
  Year 1994 Publication Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences Abbreviated Journal  
  Volume Issue Pages 509-510  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos A1994BE09Y00247 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:104476 Serial 2386  
Permanent link to this record
 

 
Author Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J. openurl 
  Title Ordering and defects in BanTaxTiyO3n ternary oxides Type P1 Proceeding
  Year 1994 Publication Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences Abbreviated Journal  
  Volume Issue Pages 869-870  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos A1994BE09Y00422 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:104477 Serial 2504  
Permanent link to this record
 

 
Author Kuriplach, J.; van Petegem, S.; Hou, M.; Van Tendeloo, G.; Schryvers, D.; et al. openurl 
  Title Positron annihilation study of nanocrystalline Ni3Al : simulations and measurements Type A1 Journal article
  Year 2001 Publication Materials science forum T2 – 12th International Conference on Positron Annihilation (ICPA-12), AUG 06-12, 2000, UNIV BUNDERSWEHR MUNCHEN, NEUBIBERG, GERMANY Abbreviated Journal  
  Volume 363-3 Issue Pages 94-96  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A positron lifetime experiment is performed on samples produced by the compaction of nanocrystalline Ni3Al powder synthesized by the inert-gas condensation technique. In the lifetime spectrum we observe two components corresponding to defects. Computer (virtual) samples of n-Ni3Al are obtained using molecular dynamics combined with the Metropolis Monte Carlo technique. Positron lifetime calculations are then performed on selected regions of simulated samples. For this purpose, a new computational technique based on a generalization of the atomic superposition method for non-periodic systems was developed. Lifetimes calculated in this way are compared to experiment.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-87849-875-3 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:102865 Serial 2681  
Permanent link to this record
 

 
Author Shi, J.M.; Peeters, F.M.; Devreese, J.T. doi  openurl
  Title Resonant bound bipolarons in a superlattice in a high magnetic field Type A1 Journal article
  Year 1996 Publication Surface science : a journal devoted to the physics and chemistry of interfaces Abbreviated Journal Surf Sci  
  Volume 361/362 Issue Pages 397-400  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996UZ03300096 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.925 Times cited (up) Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:15816 Serial 2884  
Permanent link to this record
 

 
Author Lok, J.G.S.; Geim, A.K.; Maan, J.C.; Marmorkos, I.; Peeters, F.M.; Mori, N.; Eaves, L.; McDonnell, P.; Henini, M.; Sakai, J.W.; Main, P.C. openurl 
  Title Resonant tunneling through D- states Type A1 Journal article
  Year 1996 Publication Surface science : a journal devoted to the physics and chemistry of interfaces Abbreviated Journal Surf Sci  
  Volume 361/362 Issue Pages 247-250  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996UZ03300061 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor 1.925 Times cited (up) Open Access  
  Notes Approved INSTRUMENTS & INSTRUMENTATION 31/56 Q3 # NUCLEAR SCIENCE & TECHNOLOGY 9/32 Q2 # PHYSICS, PARTICLES & FIELDS 24/28 Q4 # SPECTROSCOPY 28/43 Q3 #  
  Call Number UA @ lucian @ c:irua:15813 Serial 2894  
Permanent link to this record
 

 
Author Lok, J.G.S.; Geim, A.K.; Maan, J.C.; Marmorkos, I.; Peeters, F.M.; Mori, N.; Eaves, L.; McDonnell, P.; Henini, M.; Sakai, J.W.; Main, P.C.; doi  openurl
  Title Resonant tunnelling through D- states Type A1 Journal article
  Year 1996 Publication Surface science : a journal devoted to the physics and chemistry of interfaces T2 – 11th International Conference on the Electronic Properties of 2-Dimensional Systems (EP2DS XI), August 07-11, 1995, Univ. Nottingham, Nottingham, England Abbreviated Journal Surf Sci  
  Volume 362 Issue 1-3 Pages 247-250  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We have studied tunnelling through Si donors incorporated in the quantum well of double barrier resonant tunnelling devices. In addition to a resonance associated with the ground state of a single donor (1s level), a novel donor-related resonance at a smaller binding energy is observed in high magnetic fields where it becomes dominant over the Is resonance. We attribute this novel feature to a D-minus state of a shallow donor.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Amsterdam Editor  
  Language Wos A1996UZ03300061 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.925 Times cited (up) Open Access  
  Notes Approved INSTRUMENTS & INSTRUMENTATION 31/56 Q3 # NUCLEAR SCIENCE & TECHNOLOGY 9/32 Q2 # PHYSICS, PARTICLES & FIELDS 24/28 Q4 # SPECTROSCOPY 28/43 Q3 #  
  Call Number UA @ lucian @ c:irua:95892 Serial 2895  
Permanent link to this record
 

 
Author Krsmanovic, R.; Bertoni, G.; Van Tendeloo, G. openurl 
  Title Structural characterization of erbium doped LAS glass ceramics obtained by glass melting technique Type A1 Journal article
  Year 2007 Publication Materials science forum Abbreviated Journal  
  Volume 555 Issue Pages 377-381  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Samples of transparent glass-ceramics in the ternary system Li2O-Al2O3-SiO2 (LAS), with Er2O3 as a luminescent dopant, are investigated. The initial glass is obtained by the classical melting technique. In order to induce ceramization of the glass, TiO2 and ZrO2 are added in small amount as nucleating agents. The thermal treatments at 730 and 770 degrees C are carried out to promote formation of titanium zirconate solid solution precipitates. The spatial distribution of the precipitates in the material, their morphology, and their composition are investigated with TEM, HRTEM, HAADF-STEM, EELS and EFTEM. The results demonstrate that with the glass-melting preparation technique it is possible to achieve small nanoparticles with uniform distribution and higher number density than with the sol-gel glass preparation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0255-5476 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:94673 Serial 3220  
Permanent link to this record
 

 
Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Korothushenko, K.G.; Smolin, A.A. openurl 
  Title Structural studies of nanocrystalline diamond thin films Type A1 Journal article
  Year 1997 Publication Materials science forum Abbreviated Journal  
  Volume 239-241 Issue Pages 115-118  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos A1997BH33W00026 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:21403 Serial 3260  
Permanent link to this record
 

 
Author van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; van Roost, C.; de Keyzer, R. openurl 
  Title A TEM study of non-parallel twins inducing thickness growth in silver chloride {111} tabular crystals Type A1 Journal article
  Year 2001 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn  
  Volume 45 Issue Pages 83-90  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Springfield, Va Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.348 Times cited (up) Open Access  
  Notes Approved Most recent IF: 0.348; 2001 IF: NA  
  Call Number UA @ lucian @ c:irua:48380 Serial 3490  
Permanent link to this record
 

 
Author Zebrowski, D.P.; Peeters, F.M.; Szafran, B. pdf  doi
openurl 
  Title Driven spin transitions in fluorinated single- and bilayer-graphene quantum dots Type A1 Journal article
  Year 2017 Publication Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume 32 Issue 6 Pages 065016  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Spin transitions driven by a periodically varying electric potential in dilute fluorinated graphene quantum dots are investigated. Flakes of monolayer graphene as well as electrostatic electron traps induced in bilayer graphene are considered. The stationary states obtained within the tight-binding approach are used as the basis for description of the system dynamics. The dilute fluorination of the top layer lifts the valley degeneracy of the confined states and attenuates the orbital magnetic dipole moments due to current circulation within the flake. The spin-orbit coupling introduced by the surface deformation of the top layer induced by the adatoms allows the spin flips to be driven by the AC electric field. For the bilayer quantum dots the spin flip times is substantially shorter than the spin relaxation. Dynamical effects including many-photon and multilevel transitions are also discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000402405800007 Publication Date 2017-04-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 2.305 Times cited (up) Open Access  
  Notes ; This work was supported by the National Science Centre according to decision DEC-2013/11/B/ST3/03837 and by the Flemish Science Foundation (FWO-VL). ; Approved Most recent IF: 2.305  
  Call Number UA @ lucian @ c:irua:144238 Serial 4646  
Permanent link to this record
 

 
Author Denneulin, T.; Rouvière, J.L.; Béché, A.; Py, M.; Barnes, J.P.; Rochat, N.; Hartmann, J.M.; Cooper, D. pdf  doi
openurl 
  Title The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography Type A1 Journal article
  Year 2011 Publication Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume 26 Issue 12 Pages 1-10  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Si/Si(1 − x − y)GexCy superlattices are used in the construction of new microelectronic architectures such as multichannel transistors. The introduction of carbon in SiGe allows for compensation of the strain and to avoid plastic relaxation. However, the formation of incoherent β-SiC clusters during annealing limits the processability of SiGeC. This precipitation leads to a modification of the strain in the alloy due to the reduction of the substitutional carbon content. Here, we investigated the strain in annealed Si/Si0.744Ge0.244C0.012 superlattices grown by reduced pressure chemical vapour deposition using dark-field electron holography. The variation of the substitutional C content was calculated by correlating the results with finite-element simulations. The obtained values were then compared with Fourier-transformed infrared spectrometry measurements. It was shown that after annealing for 2 min at 1050 °C carbon no longer has any influence on strain in the superlattice, which behaves like pure SiGe. However, a significant proportion of substitutional C atoms remain in a third-nearest neighbour (3nn) configuration. It was deduced that the influence of 3nn C on strain is negligible and that only isolated atoms have a significant contribution. It was also proposed that the 3nn configuration is an intermediary step during the formation of SiC clusters.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000300151300010 Publication Date 2011-11-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.305 Times cited (up) Open Access  
  Notes Approved Most recent IF: 2.305; 2011 IF: 1.723  
  Call Number UA @ lucian @ c:irua:136427 Serial 4508  
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Author Vishwakarma, M.; Karakulina, O.M.; Abakumov, A.M.; Hadermann, J.; Mehta, B.R. pdf  url
doi  openurl
  Title Nanoscale Characterization of Growth of Secondary Phases in Off-Stoichiometric CZTS Thin Films Type A1 Journal article
  Year 2018 Publication Journal of nanoscience and nanotechnology Abbreviated Journal J Nanosci Nanotechno  
  Volume 18 Issue 3 Pages 1688-1695  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The presence of secondary phases is one of the main issues that hinder the growth of pure kesterite Cu2ZnSnS4 (CZTS) based thin films with suitable electronic and junction properties for efficient solar cell devices. In this work, CZTS thin films with varied Zn and Sn content have been prepared by RF-power controlled co-sputtering deposition using Cu, ZnS and SnS targets and a subsequent sulphurization step. Detailed TEM investigations show that the film shows a layered structure with the majority of the top layer being the kesterite phase. Depending on the initial thin film composition, either about ~1 μm Cu-rich and Zn-poor kesterite or stoichiometric CZTS is formed as top layer. X-ray diffraction, Raman spectroscopy and transmission electron microscopy reveal the presence of Cu2−x S, ZnS and SnO2 minor secondary phases in the form of nanoinclusions or nanoparticles or intermediate layers.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000426033400022 Publication Date 2018-03-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1533-4880 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.483 Times cited (up) Open Access Not_Open_Access  
  Notes Manoj Vishwakarma acknowl- edges IIT Delhi for MHRD fellowship. Professor B. R. Mehta acknowledges the support of the Schlumberger chair professorship. Manoj Vishwakarma, Joke Hadermann and Olesia M. karakulina acknowledge support provided by InsoL-DST. Manoj Vishwakarma acknowledges sup- port provided by CSIR funded projects and the support of DST-FIST Raman facility. References Approved Most recent IF: 1.483  
  Call Number EMAT @ emat @c:irua:147505 Serial 4775  
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Author Kolev, S.; Bogaerts, A. pdf  url
doi  openurl
  Title Three-dimensional modeling of energy transport in a gliding arc discharge in argon Type A1 Journal Article
  Year 2018 Publication Plasma Sources Science & Technology Abbreviated Journal Plasma Sources Sci T  
  Volume 27 Issue 12 Pages 125011  
  Keywords A1 Journal Article; gliding arc discharge, sliding arc discharge, energy transport, fluid plasma model, atmospheric pressure plasmas; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ;  
  Abstract In this work we study energy transport in a gliding arc discharge with two diverging flat

electrodes in argon gas at atmospheric pressure. The discharge is ignited at the shortest electrode

gap and it is pushed downstream by a forced gas flow. The current values considered are

relatively low and therefore a non-equilibrium plasma is produced. We consider two cases, i.e.

with high and low discharge current (28 mA and 2.8mA), and a constant gas flow of 10 lmin −1 ,

with a significant turbulent component to the velocity. The study presents an analysis of the

various energy transport mechanisms responsible for the redistribution of Joule heating to the

plasma species and the moving background gas. The objective of this work is to provide a

general understanding of the role of the different energy transport mechanisms in arc formation

and sustainment, which can be used to improve existing or new discharge designs. The work is

based on a three-dimensional numerical model, combining a fluid plasma model, the shear stress

transport Reynolds averaged Navier–Stokes turbulent gas flow model, and a model for gas

thermal balance. The obtained results show that at higher current the discharge is constricted

within a thin plasma column several hundred kelvin above room temperature, while in the low-

current discharge the combination of intense convective cooling and low Joule heating prevents

discharge contraction and the plasma column evolves to a static non-moving diffusive plasma,

continuously cooled by the flowing gas. As a result, the energy transport in the two cases is

determined by different mechanisms. At higher current and a constricted plasma column, the

plasma column is cooled mainly by turbulent transport, while at low current and an unconstricted

plasma, the major cooling mechanism is energy transport due to non-turbulent gas convection. In

general, the study also demonstrates the importance of turbulent energy transport in

redistributing the Joule heating in the arc and its significant role in arc cooling and the formation

of the gas temperature profile. In general, the turbulent energy transport lowers the average gas

temperature in the arc, thus allowing additional control of thermal non-equilibrium in the

discharge.
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000454555600005 Publication Date 2018-12-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1361-6595 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited (up) Open Access Not_Open_Access  
  Notes This work was supported by the European Regional Devel- opment Fund within the Operational Programme ’Science and Education for Smart Growth 2014 – 2020’ under the Project CoE ’National center of mechatronics and clean technologies’ BG05M2OP001-1.001-0008-C01, and by the Flemish Fund for Scientific Research (FWO); grant no G.0383.16N. Approved Most recent IF: 3.302  
  Call Number PLASMANT @ plasmant @c:irua:155973 Serial 5140  
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Author Dhayalan, S.K.; Nuytten, T.; Pourtois, G.; Simoen, E.; Pezzoli, F.; Cinquanta, E.; Bonera, E.; Loo, R.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Vandervorst, W. pdf  doi
openurl 
  Title Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers Type A1 Journal article
  Year 2019 Publication ECS journal of solid state science and technology Abbreviated Journal Ecs J Solid State Sc  
  Volume 8 Issue 4 Pages P209-P216  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Si:C and Si:C:P alloys are potential candidates for source-drain stressor applications in n-type Fin Field Effect Transistors (FinFETs). Increasing the C content to achieve high strain results in the arrangement of C atoms as third nearest neighbors (3nn) in the Si: C lattice. During thermal annealing, the presence of C atoms as 3nn may promote clustering at the interstitial sites, causing loss of stress. The concentration of C atoms as 3nn is reduced by the incorporation of a small amount of Ge atoms during the growth, whereas in-situ P doping does not influence this 3nn distribution [J Solid State Sci. Technol vol 6, p 755, 2017]. Small amounts of Ge are provided during low temperature selective epitaxial growth scheme, which are based on cyclic deposition and etching (CDE). In this work, we aim to provide physical insights into the aforementioned phenomena, to understand the behavior of 3nn C atoms and the types of defects that are formed in the annealed Si: C films. Using ab-initio simulations, the Ge-C interaction in the Si matrix is investigated and this insight is used to explain how the Ge incorporation leads to a reduced 3nn distribution of the C atoms. The interaction between C and P in the Si: C: P films is also investigated to explain why the P incorporation has not led to a reduction in the 3nn distribution. We then report on the Raman characterization of Si: C layers subjected to post epi annealing. As the penetration depth of the laser is dependent on the wavelength, Raman measurements at two different wavelengths enable us to probe the depth distribution of 3nn C atoms after applying different annealing conditions. We observed a homogeneous loss in 3nn C throughout the layer. Whereas in the kinematic modeling of high resolution X-ray diffraction spectra, a gradient in the substitutional C loss was observed close to the epitaxial layer/substrate interface. This gradient can be due to the out diffusion of C atoms into the Si substrate or to the formation of interstitial C clusters, which cannot be distinguished in HR-XRD. Deep Level Transient Spectroscopy indicated that the prominent out-diffusing species was interstitial CO complex while the interstitial C defects were also prevalent in the epi layer. (c) 2019 The Electrochemical Society.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000465069200001 Publication Date 2019-04-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2162-8769; 2162-8777 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.787 Times cited (up) Open Access Not_Open_Access  
  Notes Approved Most recent IF: 1.787  
  Call Number UA @ admin @ c:irua:160399 Serial 5275  
Permanent link to this record
 

 
Author Neyts, E.C. pdf  doi
openurl 
  Title Special Issue on future directions in plasma nanoscience Type Editorial
  Year 2019 Publication Frontiers of Chemical Science and Engineering Abbreviated Journal Front Chem Sci Eng  
  Volume 13 Issue 2 Pages 199-200  
  Keywords Editorial; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000468848400001 Publication Date 2019-05-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2095-0179 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.712 Times cited (up) Open Access Not_Open_Access  
  Notes Approved Most recent IF: 1.712  
  Call Number UA @ admin @ c:irua:160277 Serial 5280  
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