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Author Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. openurl 
  Title Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation Type A1 Journal article
  Year 2001 Publication Institute of physics conference series Abbreviated Journal  
  Volume Issue 169 Pages 481-484  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0818-4 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:95163 Serial 311  
Permanent link to this record
 

 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. openurl 
  Title Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation Type A1 Journal article
  Year 1999 Publication Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND Abbreviated Journal Inst Phys Conf Ser  
  Volume Issue 164 Pages 495-498  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos 000166835300106 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0650-5; 0951-3248 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:102918 Serial 376  
Permanent link to this record
 

 
Author Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O. doi  openurl
  Title Defect characterization in high temperature implanted 6H-SiC using TEM Type A1 Journal article
  Year 1997 Publication Nuclear instruments and methods in physics research: B Abbreviated Journal Nucl Instrum Meth B  
  Volume 127/128 Issue Pages 347-349  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos A1997XG60500078 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.109 Times cited 17 Open Access  
  Notes Approved Most recent IF: 1.109; 1997 IF: 1.016  
  Call Number UA @ lucian @ c:irua:21411 Serial 613  
Permanent link to this record
 

 
Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. openurl 
  Title Direct observation of clusters in some FCC alloys by HREM Type A1 Journal article
  Year 1994 Publication Icem Abbreviated Journal  
  Volume 13 Issue Pages 447-448  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos A1994BE09X00207 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10052 Serial 716  
Permanent link to this record
 

 
Author Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. openurl 
  Title EFTEM study of plasma etched low-k Si-O-C dielectrics Type A1 Journal article
  Year 2001 Publication Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND Abbreviated Journal  
  Volume Issue 169 Pages 415-418  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0818-4; 0951-3248 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103432 Serial 877  
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R. openurl 
  Title Electron diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals Type A1 Journal article
  Year 1994 Publication Icem Abbreviated Journal  
  Volume 13 Issue Pages  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos A1994BC23W00081 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10058 Serial 918  
Permanent link to this record
 

 
Author Schryvers, D.; van Landuyt, J.T. openurl 
  Title Electron microscopy study of twin sequences and branching in Ni66Al34 3r martensite Type P1 Proceeding
  Year 1993 Publication Proceedings Of The International Conference On Martensitic Transformations (icomat-92) Abbreviated Journal  
  Volume Issue Pages 263-268  
  Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos A1993BD05K00039 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 1 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:104492 Serial 975  
Permanent link to this record
 

 
Author Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C. openurl 
  Title EM study of sensitisation of silver halide grains Type A1 Journal article
  Year 1994 Publication Icem Abbreviated Journal  
  Volume 13 Issue Pages  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos A1994BE09Y00185 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 #  
  Call Number UA @ lucian @ c:irua:10607 Serial 1030  
Permanent link to this record
 

 
Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Kononenko, T.V.; Obraztsova, E.D.; Strelnitsky, V.E. openurl 
  Title Formation of diamond nanocrystals in laser-irradiated amorphous carbon films Type P3 Proceeding
  Year 1994 Publication International Conference on the New Diamond Science and Technology Abbreviated Journal  
  Volume 4 Issue Pages 25-29  
  Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10059 Serial 1259  
Permanent link to this record
 

 
Author Nistor, L.; Nistor, S.V.; Dincã, G.; van Landuyt, J.; Schoemaker, D.; Copaciu, V.; Georgeoni, P.; Arnici, N. doi  openurl
  Title High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis Type A1 Journal article
  Year 1999 Publication Diamonds an related materials Abbreviated Journal Diam Relat Mater  
  Volume 8 Issue Pages 738-742  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos 000080437000123 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.561 Times cited 7 Open Access  
  Notes Approved Most recent IF: 2.561; 1999 IF: 1.924  
  Call Number UA @ lucian @ c:irua:27519 Serial 1445  
Permanent link to this record
 

 
Author Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Tanner, L.E. openurl 
  Title HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys Type A3 Journal article
  Year 1994 Publication Icem Abbreviated Journal  
  Volume 13 Issue Pages 659-662  
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10051 Serial 1501  
Permanent link to this record
 

 
Author Bernaerts, D.; Zhang, X.B.; Zhang, X.F.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. openurl 
  Title HREM study of Rb6C60 and helical carbon nanotubules Type A3 Journal article
  Year 1994 Publication Icem Abbreviated Journal  
  Volume 13 Issue Pages 305-306  
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved COMPUTER SCIENCE, INTERDISCIPLINARY 11/104 Q1 # PHYSICS, MATHEMATICAL 1/53 Q1 #  
  Call Number UA @ lucian @ c:irua:10056 Serial 1514  
Permanent link to this record
 

 
Author Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. url  doi
openurl 
  Title In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures Type A1 Journal article
  Year 2000 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 61 Issue 15 Pages 10336-10345  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos 000086606200082 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 27 Open Access  
  Notes Conference Name: Microsc. Semicond. Mater. Conf. Approved Most recent IF: 3.836; 2000 IF: NA  
  Call Number UA @ lucian @ c:irua:103456 Serial 1577  
Permanent link to this record
 

 
Author Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J. openurl 
  Title Laser thermotreatment of the SnO2layers Type P1 Proceeding
  Year 1998 Publication Eurosensors XII, vols 1 and 2 Abbreviated Journal  
  Volume Issue Pages 481-484  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract The optical and electrical properties and pi ase composition of magnetron sputtered antimony-doped SnOx thin films are investigated before and after laser thermotreatment The temperature dependencies on mobility and concentration of free charges are measured by Van der Pauw method. The gas sensitivity of SnOx has been measured before and after laser thermotreatment.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos 000077311200117 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0536-3 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:104343 Serial 1798  
Permanent link to this record
 

 
Author Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J. openurl 
  Title Ordering and defects in BanTaxTiyO3n ternary oxides Type P1 Proceeding
  Year 1994 Publication Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences Abbreviated Journal  
  Volume Issue Pages 869-870  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos A1994BE09Y00422 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:104477 Serial 2504  
Permanent link to this record
 

 
Author Van Tendeloo, G.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Verheijen, M.A.; van Loosdrecht, P.H.M.; Meijer, G. pdf  doi
openurl 
  Title Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy Type A1 Journal article
  Year 1992 Publication Journal of physical chemistry Abbreviated Journal  
  Volume 96 Issue Pages 7424-7430  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos A1992JM58600054 Publication Date 2005-03-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-3654;1541-5740; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 33 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:4101 Serial 2594  
Permanent link to this record
 

 
Author Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. openurl 
  Title Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope Type A3 Journal article
  Year 1995 Publication Materials science and technology Abbreviated Journal  
  Volume 11 Issue Pages 1194-1204  
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos A1995TQ95100016 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13297 Serial 2655  
Permanent link to this record
 

 
Author Schryvers, D.; Van Landuyt, J. pdf  openurl
  Title Electron microscopy study of twin sequences and branching in NissAl34 3R martensite Type A3 Journal Article
  Year 1992 Publication ICOMAT Abbreviated Journal  
  Volume Issue Pages  
  Keywords A3 Journal Article; Electron Microscopy for Materials Science (EMAT) ;  
  Abstract Microtwin sequences in Ni66Al34 martensite plates of different size were investigated by electron microscopy. Although mostly irregular sequences were observed an average twin width w can be determined which increases with twin length L following the expected relation w ~ sqrt(L). High resolution electron microscopy was used to study the twin branching close to the plate boundaries and an atomic model for the branching of a microtwin and the changes in twin thickness is suggested  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number EMAT @ emat @ Serial 5054  
Permanent link to this record
 

 
Author Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. openurl 
  Title A 2a2b3c superstructure in hexagonal NiS1-x: a study by means of electron diffraction and HREM Type A1 Journal article
  Year 1993 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 126 Issue Pages 457-465  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Amsterdam Editor  
  Language Wos A1993KH92500029 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.698 Times cited 4 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:7499 Serial 9  
Permanent link to this record
 

 
Author Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. pdf  doi
openurl 
  Title A 2a2a3c superstructure in hexagonal Ni1-xS : a study by means of electron-diffraction and HRTEM Type A1 Journal article
  Year 1993 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 126 Issue 2-3 Pages 457-465  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The high temperature phase of Ni1-xS has the NiAs-type structure. The coexistence of two superstructures, ''3a3a3c'' and ''2a2a3c'' with the basic phase is confirmed by means of electron diffraction. The 2a2a3c superstructure is studied by means of electron diffraction and high resolution electron microscopy. A structure model is proposed based on the periodic insertion of stacking faults in the NiAs-type basic structure and the ordering of vacancies in alternate metal-atom layers. Microtwinning in very narrow slabs is found to be a main feature of the 2a2a3c regions and two defect models are discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Amsterdam Editor  
  Language Wos A1993KH92500029 Publication Date 2002-10-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.698 Times cited 4 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:103012 Serial 23  
Permanent link to this record
 

 
Author de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. doi  openurl
  Title A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon Type A1 Journal article
  Year 2003 Publication Physica: B : condensed matter T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK Abbreviated Journal Physica B  
  Volume 340 Issue Pages 1013-1017  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Amsterdam Editor  
  Language Wos 000188300200213 Publication Date 2003-11-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.386 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.386; 2003 IF: 0.908  
  Call Number UA @ lucian @ c:irua:103784 Serial 25  
Permanent link to this record
 

 
Author De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. doi  openurl
  Title Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers Type A1 Journal article
  Year 1999 Publication Microelectronic engineering Abbreviated Journal Microelectron Eng  
  Volume 45 Issue 2-3 Pages 277-282  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Amsterdam Editor  
  Language Wos 000081748600023 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.806 Times cited Open Access  
  Notes Fwo-G.0051.97; Fwo-G.00117.86 Approved Most recent IF: 1.806; 1999 IF: 0.815  
  Call Number UA @ lucian @ c:irua:95791 Serial 47  
Permanent link to this record
 

 
Author Zhang, X.F.; Zhang, X.B.; Van Tendeloo, G.; Amelinckx, S.; op de Beeck, M.; van Landuyt, J. doi  openurl
  Title Carbon nano-tubes: their formation process and observation by electron microscopy Type A1 Journal article
  Year 1993 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 130 Issue Pages 368-382  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Amsterdam Editor  
  Language Wos A1993LK45300003 Publication Date 2002-10-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.698 Times cited 190 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:6786 Serial 281  
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Verbeeck, A.; de Keyzer, R. openurl 
  Title Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry Type A1 Journal article
  Year 1991 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 110 Issue Pages 930-941  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Amsterdam Editor  
  Language Wos A1991FL02100033 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.698 Times cited 40 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:48349 Serial 321  
Permanent link to this record
 

 
Author Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. openurl 
  Title Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas Type A1 Journal article
  Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 173 Issue Pages 285-296  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Amsterdam Editor  
  Language Wos A1997XC98100008 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.751; 1997 IF: 1.259  
  Call Number UA @ lucian @ c:irua:20459 Serial 324  
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Author de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. pdf  doi
openurl 
  Title Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM Type A1 Journal article
  Year 2001 Publication Physica: B : condensed matter T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY Abbreviated Journal Physica B  
  Volume 308 Issue Pages 294-297  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier science bv Place of Publication (up) Amsterdam Editor  
  Language Wos 000173660100073 Publication Date 2002-10-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.386 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.386; 2001 IF: 0.663  
  Call Number UA @ lucian @ c:irua:103389 Serial 345  
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Author Nistor, L.C.; van Landuyt, J.; Barton, J.D.; Hole, D.E.; Skelland, N.D.; Townsend, P.D. doi  openurl
  Title Colloid size distributions in ion implanted glass Type A1 Journal article
  Year 1993 Publication Journal of non-crystalline solids Abbreviated Journal J Non-Cryst Solids  
  Volume 162 Issue Pages 217-224  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Amsterdam Editor  
  Language Wos A1993LY37100002 Publication Date 2003-06-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-3093; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.766 Times cited 63 Open Access  
  Notes Approved INSTRUMENTS & INSTRUMENTATION 31/56 Q3 # NUCLEAR SCIENCE & TECHNOLOGY 9/32 Q2 # PHYSICS, PARTICLES & FIELDS 24/28 Q4 # SPECTROSCOPY 28/43 Q3 #  
  Call Number UA @ lucian @ c:irua:6787 Serial 389  
Permanent link to this record
 

 
Author Chen, J.H.; van Dyck, D.; op de Beeck, M.; van Landuyt, J. openurl 
  Title Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging Type A1 Journal article
  Year 1997 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 69 Issue Pages 219-240  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Amsterdam Editor  
  Language Wos A1997YG59500001 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 11 Open Access  
  Notes Approved Most recent IF: 2.843; 1997 IF: 1.600  
  Call Number UA @ lucian @ c:irua:21416 Serial 455  
Permanent link to this record
 

 
Author Amelinckx, S.; Luyten, W.; Krekels, T.; Van Tendeloo, G.; van Landuyt, J. doi  openurl
  Title Conical, helically woud, graphite whiskers: a limliting member of the “fullerenes”? Type A1 Journal article
  Year 1992 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 121 Issue Pages 543-558  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Amsterdam Editor  
  Language Wos A1992JK56000001 Publication Date 2002-10-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.698 Times cited 43 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:4103 Serial 492  
Permanent link to this record
 

 
Author van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. doi  openurl
  Title Defects and growth mechanisms of AgCl(100) tabular crystals Type A1 Journal article
  Year 1998 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 187 Issue Pages 410-420  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) Amsterdam Editor  
  Language Wos 000073710800014 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.751; 1998 IF: 1.307  
  Call Number UA @ lucian @ c:irua:29675 Serial 625  
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