NANOlab Center of Excellence literature database -- Query Results

	NANOlab Center of Excellence literature database Home \| Show All \| Simple Search \| Advanced Search	Login Quick Search: Field: contains: ...
	421–429 of 429 records found matching your query (RSS \| history):

Select All Deselect All

<< 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >>

List View

Citations

Details

	Records
	Author	Domingos, J.L.C.; Peeters, F.M.; Ferreira, W.P.
	Title	Self-assembly of rigid magnetic rods consisting of single dipolar beads in two dimensions			Type	A1 Journal article
	Year	2017	Publication	Physical review E	Abbreviated Journal	Phys Rev E
	Volume	96	Issue	1	Pages	012603
	Keywords	A1 Journal article; Condensed Matter Theory (CMT)
	Abstract	Molecular dynamics simulations are used to investigate the structural properties of a two-dimensional ensemble of magnetic rods, which are modeled as aligned single dipolar beads. The obtained self-assembled configurations can be characterized as (1) clusters, (2) percolated, and (3) ordered structures, and their structural properties are investigated in detail. By increasing the aspect ratio of the magnetic rods, we show that the percolation transition is suppressed due to the reduced mobility of the rods in two dimensions. Such a behavior is opposite to the one observed in three dimensions. A magnetic bulk phase is found with local ferromagnetic order and an unusual nonmonotonic behavior of the nematic order is observed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000405713900014	Publication Date	2017-07-18
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2470-0045;2470-0053;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.366	Times cited	8	Open Access
	Notes	; This work was supported by the Brazilian agencies FUNCAP, CAPES, program Science without borders, and CNPq (Project No. 400748/2013-4), the joint CNPq-FWO bilateral project, and the Flemish Science Foundation (FWO-V1). ;			Approved	Most recent IF: 2.366
	Call Number	UA @ lucian @ c:irua:145210			Serial	4723
Permanent link to this record



	Author	van der Torren, A.J.H.; Liao, Z.; Xu, C.; Gauquelin, N.; Yin, C.; Aarts, J.; van der Molen, S.J.
	Title	Formation of a conducting LaAlO₃/SrTiO₃ interface studied by low-energy electron reflection during growth			Type	A1 Journal Article
	Year	2017	Publication	Physical Review Materials	Abbreviated Journal	Phys. Rev. Materials
	Volume	1	Issue	7	Pages	075001
	Keywords	A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
	Abstract	The two-dimensional electron gas occurring between the band insulators SrTiO 3 and LaAlO 3 continues to attract considerable interest, due to the possibility of dynamic control over the carrier density, and the ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations, there are still questions about the details of the physics involved. In particular, not much is known about the electronic structure of the growing LaAlO 3 layer at the growth temperature (around 800 ◦ C) in oxygen (pressure around 5 × 10 −5 mbar), since analysis techniques at these conditions are not readily available. We developed a pulsed laser deposition system inside a low-energy electron microscope in order to study this issue. The setup allows for layer-by-layer growth control and in-situ measurements of the angle-dependent electron reflection intensity, which can be used as a fingerprint of the electronic structure of the surface layers during growth. By using different substrate terminations and growth conditions we observe two families of reflectivity maps, which we can connect either to samples with an AlO 2 -rich surface and a conducting interface; or to samples with a LaO-rich surface and an insulating interface. Our observations emphasize that substrate termination and stoichiometry determine the electronic structure of the growing layer, and thereby the conductance of the interface.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000418770200003	Publication Date	2017-12-06
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2475-9953	ISBN		Additional Links
	Impact Factor		Times cited	2	Open Access	Not_Open_Access
	Notes	Nederlandse Organisatie voor Wetenschappelijk Onderzoek; Fonds Wetenschappelijk Onderzoek, G.0044.13N ; European Cooperation in Science and Technology, MP 1308 ; We want to acknowledge Ruud Tromp, Daniel Gee- len, Johannes Jobst, Regina Dittmann, Gert Jan Koster, Guus Rijnders and Jo Verbeek for discussions and ad- vice and Ruud van Egmond and Marcel Hesselberth for technical assistance. This work was supported by the Netherlands Organization for Scientific Research (NWO) by means of an ”NWO Groot” grant and by the Leiden- Delft Consortium NanoFront. The work is part of the re- search programmes NWOnano and DESCO, which are fi- nanced by NWO. N.G. acknowledges funding through the GOA project “Solarpaint” of the University of Antwerp and from the FWO project G.0044.13N (Charge order- ing). The microscope used in this work was partly funded by the Hercules Fund from the Flemish Government. We would also like to acknowledge networking support by the COST Action MP 1308 (COST TO-BE).			Approved	Most recent IF: NA
	Call Number	EMAT @ emat @			Serial	4903
Permanent link to this record



	Author	Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N.
	Title	Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures			Type	P1 Proceeding
	Year	2017	Publication	Semiconductor Process Integration 10	Abbreviated Journal
	Volume		Issue		Pages	241-252
	Keywords	P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees C. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during the Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions.
	Address
	Corporate Author				Thesis
	Publisher	Electrochemical soc inc	Place of Publication	Pennington	Editor
	Language		Wos	000426269800024	Publication Date	2017-10-17
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume	80	Series Issue	4	Edition
	ISSN	978-1-60768-821-1; 978-1-62332-473-5	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor		Times cited		Open Access	Not_Open_Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:149965			Serial	4966
Permanent link to this record



	Author	Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N.
	Title	Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations			Type	P1 Proceeding
	Year	2017	Publication	Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar	Abbreviated Journal
	Volume		Issue		Pages	303-311
	Keywords	P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first-principles calculations with Non-Equilibrium Green functions transport simulations. The intrinsic contact resistivity is found to saturate at similar to 2x10(-10) Omega.cm(2) with the doping concentration and sets an intrinsic limit to the ultimate contact resistance achievable for n-doped Si vertical bar amorphous-TiSi. This limit arises from the intrinsic properties of the semiconductor and of the metal such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting metals with a heavy electron effective mass helps reducing the interface intrinsic contact resistivity.
	Address
	Corporate Author				Thesis
	Publisher	Electrochemical soc inc	Place of Publication	Pennington	Editor
	Language		Wos	000426271800028	Publication Date	2017-10-17
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume	80	Series Issue	1	Edition
	ISSN	978-1-62332-470-4; 978-1-60768-818-1	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	1	Open Access	Not_Open_Access
	Notes	; ;			Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:149966			Serial	4976
Permanent link to this record



	Author	De Cocker, P.; Bessiere, Y.; Hernandez-Raquet, G.; Dubos, S.; Mercade, M.; Sun, X.Y.; Mozo, I.; Barillon, B.; Gaval, G.; Caligaris, M.; Ruel, S.M.; Vlaeminck, S.E.; Sperandio, M.
	Title	Short and long term effect of decreasing temperature on anammox activity and enrichment in mainstream granular sludge process			Type	P1 Proceeding
	Year	2017	Publication	Frontiers In Wastewater Treatment And Modelling, Ficwtm 2017	Abbreviated Journal
	Volume	4	Issue		Pages	50-54 T2 - Frontiers International Conference on W
	Keywords	P1 Proceeding; Sustainable Energy, Air and Water Technology (DuEL)
	Abstract	This study investigates the impact of lower temperature on short term and long term (down to 10 degrees C) on a completely anoxic anammox granular sludge process. This is the first time granular sludge Anammox is operated in pure anoxic condition in SBR and at low temperature. Conversion performance, kinetic parameters, sludge characteristics and microbial community were analyzed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000430181700008	Publication Date	2017-05-04
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	978-3-319-58421-8; 978-3-319-58420-1; 978-3-319-58420-1	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ admin @ c:irua:151640			Serial	8520
Permanent link to this record



	Author	Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G.
	Title	Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors			Type	P1 Proceeding
	Year	2017	Publication	Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017)	Abbreviated Journal
	Volume		Issue		Pages	29-32
	Keywords	P1 Proceeding; Condensed Matter Theory (CMT)
	Abstract	Heterostructures of III-V materials under a mechanical strain are being actively researched to enhance the performance of the tunnel field-effect transistor (TFET). In scaled III-V device structures, however, the interplay between the effects of strain and quantum confinement on the semiconductor band structure and hence the performance is highly non-trivial. We have therefore developed a computationally efficient quantum mechanical simulator Pharos, which enables self-consistent full-zone k.p-based simulations of III-V TFETs under a general non-uniform strain. We present the self-consistent procedure and demonstrate it on confined staggered bandgap GaAs0.5Sb0.5/In0.53Ga0.47As TFETs. We find a large performance degradation due to size-induced quantum confinement compared to non-confined devices. We show that some performance can be regained either by applying a uniform biaxial tensile strain or through the non-uniform strain profile at a lattice-mismatched heterostructure.
	Address
	Corporate Author				Thesis
	Publisher	Ieee	Place of Publication	New york	Editor
	Language		Wos		Publication Date
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	978-4-86348-610-2	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:149949			Serial	4978
Permanent link to this record



	Author	Clerici, E.A.; De Meyer, S.; van der Snickt, G.; Janssens, K.
	Title	Synchroton X-ray powder diffraction study of lead white oxidation by sodium hypochloride			Type	P1 Proceeding
	Year	2017	Publication		Abbreviated Journal
	Volume		Issue		Pages	13-27
	Keywords	P1 Proceeding; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos		Publication Date
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	978-80-87108-75-8	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor		Times cited		Open Access
	Notes	; ;			Approved	Most recent IF: NA
	Call Number	UA @ admin @ c:irua:157219			Serial	5860
Permanent link to this record



	Author	De Meyer, S.; Vanmeert, F.; Janssens, K.; Storme, P.
	Title	A mobile scanner for xrpd-imaging of paintings in transmission and reflection geometry			Type	P1 Proceeding
	Year	2017	Publication	ACTA ARTIS ACADEMICA 2017: PAINTING AS A STORY T2 – 6th Interdisciplinary ALMA Conference, JUN 01-03, 2017, Brno, CZECH REPUBLIC	Abbreviated Journal
	Volume		Issue		Pages	29-38
	Keywords	P1 Proceeding; Art; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Antwerp Cultural Heritage Sciences (ARCHES)
	Abstract	In this paper the possibilities and limitations of a non-invasive prototype of macroscopic X-ray powder diffraction scanning device employed in transmission and reflection mode are demonstrated. Contrarily to e.g. macroscopic X-ray fluorescence scanners, which gather information on the elemental level, the prototype instrument allows to obtain information on the crystallographic structure of the components. When applied to cultural heritage artefacts, it becomes possible to identify and localize crystalline pigments. Furthermore, it became clear that different information can be available depending on the geometry of the scanner components. In transmission mode information over the entire stratigraphy of the painting is gathered, which is useful to e.g. identify background substrates and major pigments. On the other hand, reflection-XRPD is a surface-sensitive technique and allows the identification of pigments and degradation products located on the surface. The data acquired during both experiments can be presented as two-dimensional distribution maps which show the spatial distribution of every identified pigment. The complementary nature of transmission and reflectionmode makes it possible to gain more insight into the stratigraphy of the painting which is valuable information for conservation and restoration scientists.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000430517600002	Publication Date
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	978-80-87108-75-8	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ admin @ c:irua:189869			Serial	7392
Permanent link to this record



	Author	Fougerolle, Y.; Truchetet, F.; Gielis, J.
	Title	Potential fields of self intersecting Gielis curves for modeling and generalized blending techniques			Type	P1 Proceeding
	Year	2017	Publication	Modeling In Mathematics	Abbreviated Journal
	Volume	2	Issue		Pages	67-81 T2 -
	Keywords	P1 Proceeding; Sustainable Energy, Air and Water Technology (DuEL)
	Abstract	The definition of Gielis curves allows for the representation of self intersecting curves. The analysis and the understanding of these representations is of major interest for the analytical representation of sectors bounded by multiple subsets of curves (or surfaces), as this occurs for instance in many natural objects. We present a construction scheme based on R-functions to build signed potential fields with guaranteed differential properties, such that their zero-set corresponds to the outer, the inner envelop, or combined subparts of the curve. Our framework is designed to allow for the definition of composed domains built upon Boolean operations between several distinct objects or some subpart of self-intersecting curves, but also provides a representation for soft blending techniques in which the traditional Boolean union and intersection become special cases of linear combinations between the objects' potential fields. Finally, by establishing a connection between R-functions and Lame curves, we can extend the domain of the p parameter within the R-p-function from the set of the even positive numbers to the real numbers strictly greater than 1, i.e. p is an element of]1, +infinity[.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000442076400006	Publication Date	2017-04-20
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	978-94-6239-261-8; 978-94-6239-260-1; 978-94-6239-260-1	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ admin @ c:irua:153801			Serial	8395
Permanent link to this record