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Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Institute of physics conference series T2 –, Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND , 495 (1999)
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A self-consistent mathematical model of a hollow cathode glow discharge”. Baguer N, Bogaerts A, Gijbels R, , 157 (1999)
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Simulation of plasma processes in plasma assisted CVD reactors”. Herrebout D, Bogaerts A, Goedheer W, Dekempeneer E, Gijbels R, , 213 (1999)
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Hybrid magnetic-semiconductor nanostructures”. Peeters FM, de Boeck J Academic Press, New York, page 345 (1999).
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Magnetoplasma excitations in vertically coupled quantum dot systems”. Partoens B, Matulis A, Peeters FM, Materials science forum 297/298, 225 (1999)
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Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures”. Pokatilov EP, Fomin VM, Balaban SN, Gladilin VN, Klimin SN, Devreese JT, Magnus W, Schoenmaker W, Collaert N, van Rossum M, de Meyer K, Journal Of Applied Physics 85, 6625 (1999). http://doi.org/10.1063/1.370171
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Modelling of radio frequency capacitively coupled plasma at intermediate pressures”. Berezhnoi S, Kaganovich I, Bogaerts A, Gijbels R Kluwer Academic, Dordrecht, page 525 (1999).
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Investigation of the electron distribution functions in low pressure electron cyclotron resonance discharges”. Kaganovich I, Misina M, Bogaerts A, Gijbels R Kluwer Academic, Dordrecht, page 543 (1999).
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Static secondary ion mass spectrometry (S-SIMS): part 1: methodology and structural interpretation”. van Vaeck L, Adriaens A, Gijbels R, Mass spectrometry reviews 18, 1 (1999)
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Non monotonic behavior of the energy levels of quantum wells with a large mass mismatch in the presence of an in-plane magnetic field”. de Meester RHJ, Peeters FM, Journal of physics : condensed matter 11, 6207 (1999)
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On estimation of the dielectric function of Ag(Br,I) nanocrystals by cryo-EELS (addendum)”. Oleshko VP, Gijbels RH, van Daele AJ, Jacob WA, Nanostructered materials 11, 687 (1999)
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Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution”. de Witte H, de Gendt S, Douglas M, Conard T, Kenis K, Mertens PW, Vandervorst W, Gijbels R s.n., Leuven, page 147 (1999).
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Orientational disorder and order in C60-fullerite and in MC60-alkali metal fullerides”. Nikolaev AV, Michel KH, Copley JRD Plenum Press, New York, page 183 (1999).
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Minibands and Wannier-Strak ladders in semiconductor superlattices studied by infrared spectroscopy”. Helm M, Hilber W, Strasser G, de Meester R, Peeters FM, Brazilian journal of physics 29, 652 (1999)
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Anion ordering in fluorinated La2CuO4”. Hadermann J, Abakumov AM, Van Tendeloo G, Shpanchenko RV, Oleinikov PN, Antipov EV s.l., page 133 (1999).
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EM investigation of precursors and precipitation in a Ni39.6Mn47.5Ti12.9 alloy”. Seo JW, Schryvers D, Vermeulen W, Richard O, Potapov P, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 79, 1279 (1999)
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Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research 171, 147 (1999)
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Structural aspects of CVD idamond wafers grown at different hydrogen flow rates”. Nistor L, van Landuyt J, Ralchenko V, Physica status solidi: A: applied research 171, 5 (1999). http://doi.org/10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
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Morphology and defects in shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, Rooyackers R, Badenes G, Conference series of the Institute of Physics 164, 443 (1999)
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The local structure of YBCO based materials by TEM”. Van Tendeloo G, Lebedev OI, Verbist K, Abakumov AM, Shpanchenko RV, Antipov EV, Blank DHA Kluwer Academic, Dordrecht, page 11 (1999).
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Phase competition between Y2BaCuO5 and Y2O3 precipitates in Y-rich YBCO thin films”. Scotti di Uccio U, Miletto Granozio F, di Chiara A, Tafuri F, Lebedev OI, Verbist K, Van Tendeloo G, Physica: C : superconductivity 321, 162 (1999)
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Crystallization of fullerene nanopraticles in an aerosol flow reactor”. Joutsensaari J, Ahonen PP, Tapper U, Kauppinen EI, Pauwels B, Amelinckx S, Van Tendeloo G, (1999)
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Aerosol synthesis of nanostructured, ultrafine fullerene particles”. Joutsensaari J, Ahonen PP, Tapper U, Kauppinen EI, Pauwels B, Amelinckx S, Van Tendeloo G, (1999)
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Electron microscopy on nanoparticles: structure of C60 and C70 nanopraticles”. Pauwels B, Van Tendeloo G, Joutsensaari J, Kauppinen EI, (1999)
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Inorganic mass spectrometry”. Adams F, Gijbels R, van Grieken R, Kim Y-sang Freedom Academy Press, Seoul (1999).
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Decomposition phenomena in Ni-Mn-Ti austenite”. Schryvers D, Seo JW, Richard O, Vermeulen W, Potapov P s.l., page 887 (1999).
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Advanced TEM studies of martensite and related phase transformations”. Schryvers D s.l., page 947 (1999).
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Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE”. Farvacque JL, Bougrioua Z, Moerman I, Van Tendeloo G, Lebedev O, Physica: B : condensed matter T2 –, 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA 273-4, 140 (1999). http://doi.org/10.1016/S0921-4526(99)00431-7
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YBa2Cu3O7-x Josephson junctions and dc SQUIDs based on 45\text{\textdegree} a-axis tilt and twist grain boundaries : atomically clean interfaces for applications”. Tafuri F, Carillo F, Lombardi F, Granozio FM, dii Uccio US, Testa G, Sarnelli E, Verbist K, Van Tendeloo G, Superconductor science and technology T2 –, International Superconductive Electronics Conference, JUN 21-25, 1999, BERKELEY, CALIFORNIA 12, 1007 (1999). http://doi.org/10.1088/0953-2048/12/11/393
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Growth of pure and doped Rb2ZnCl4and K2ZnCl4 single crystals by Czochralski technique”. Stefan M, Nistor SV, Mateescu DC, Abakumov AM, Journal of crystal growth 200, 148 (1999). http://doi.org/10.1016/S0022-0248(98)01247-0
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